WSF3040

N-Ch MOSFET

General Description Product Summery

The WSF3040 is the highest performance trench

N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID
which provide excellent RDSON and gate charge 30V 10mΩ 43A
for most of the synchronous buck converter
applications .
Applications
The WSF3040 meet the RoHS and Green
Product requirement 100% EAS guaranteed with z High Frequency Point-of-Load Synchronous
full function reliability approved.
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
Features z Load Switch

z Advanced high cell density Trench technology TO-252 Pin Configuration

z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available

Absolute Maximum Ratings

Symbol Parameter Rating Units

VDS Drain-Source Voltage 30 V
VGS Gate-Source Voltage ±20 V
1
ID@TC=25℃ Continuous Drain Current, VGS @ 10V 43 A
1
ID@TC=100℃ Continuous Drain Current, VGS @ 10V 30 A
1
ID@TA=25℃ Continuous Drain Current, VGS @ 10V 11 A
1
ID@TA=70℃ Continuous Drain Current, VGS @ 10V 9 A
2
IDM Pulsed Drain Current 112 A
3
EAS Single Pulse Avalanche Energy 53 mJ
IAS Avalanche Current 22 A
PD@TC=25℃ Total Power Dissipation4 37.5 W
PD@TA=25℃ Total Power Dissipation4 2 W
TSTG Storage Temperature Range -55 to 175 ℃
TJ Operating Junction Temperature Range -55 to 175 ℃

Thermal Data

Symbol Parameter Typ. Max. Unit

1
RθJA Thermal Resistance Junction-Ambient --- 62 ℃/W
RθJC Thermal Resistance Junction-Case1 --- 4 ℃/W

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 WSF3040
N-Ch MOSFET

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

Symbol Parameter Conditions Min. Typ. Max. Unit

BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 --- --- V
△BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.0193 --- V/℃
VGS=10V , ID=30A --- 10 12
RDS(ON) Static Drain-Source On-Resistance2 mΩ
VGS=4.5V , ID=15A --- 15 18
VGS(th) Gate Threshold Voltage 1.2 1.5 2.5 V
VGS=VDS , ID =250uA
△VGS(th) VGS(th) Temperature Coefficient --- -3.97 --- mV/℃
VDS=24V , VGS=0V , TJ=25℃ --- --- 1
IDSS Drain-Source Leakage Current uA
VDS=24V , VGS=0V , TJ=55℃ --- --- 5
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA
gfs Forward Transconductance VDS=5V , ID=30A --- 34 --- S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.8 3.6 Ω
Qg Total Gate Charge (4.5V) --- 9.8 13.7
Qgs Gate-Source Charge VDS=15V , VGS=4.5V , ID=15A --- 4.2 5.88 nC
Qgd Gate-Drain Charge --- 3.6 5.0
Td(on) Turn-On Delay Time --- 5 8.0
Tr Rise Time VDD=15V , VGS=10V , RG=3.3Ω --- 8 14
ns
Td(off) Turn-Off Delay Time ID=15A --- 31 62
Tf Fall Time --- 4 8
Ciss Input Capacitance --- 940 1316
Coss Output Capacitance VDS=15V , VGS=0V , f=1MHz --- 131 183 pF
Crss Reverse Transfer Capacitance --- 109 153

Guaranteed Avalanche Characteristics

Symbol Parameter Conditions Min. Typ. Max. Unit

5
EAS Single Pulse Avalanche Energy VDD=25V , L=0.1mH , IAS=15A 24.6 --- --- mJ

Diode Characteristics

Symbol Parameter Conditions Min. Typ. Max. Unit

1,6
IS Continuous Source Current --- --- 15 A
VG=VD=0V , Force Current
ISM Pulsed Source Current2,6 --- --- 112 A
2
VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1 V
trr Reverse Recovery Time --- 8.5 --- nS
Qrr Reverse Recovery Charge IF=30A , dI/dt=100A/µs , TJ=25℃ --- 2.2 --- nC

Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t<10sec.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=15A
4.The power dissipation is limited by 175℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

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 WSF3040
N-Ch MOSFET

Typical Characteristics
120 20

ID=30A
100
VGS=10V
VGS=7V
ID Drain Current (A)

18
80 VGS=5V

RDSON (mΩ)
VGS=4.5V
60 15

40
VGS=3V 13
20

0 10
0 0.5 1 1.5 2 2.5 3 4 6 8 10
VGS (V)
VDS , Drain-to-Source Voltage (V)
Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage
12

10
IS Source Current(A)

6
TJ=175℃ TJ=25℃
4

0
0 0.3 0.6 0.9 1.2
VSD , Source-to-Drain Voltage (V)

Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics

1.5 2.0
Normalized On Resistance
Normalized VGS(th)

1 1.5

0.5 1.0

0.5
0
-50 25 100 175
-50 25 100 175

TJ ,Junction Temperature ( ℃) TJ , Junction Temperature (℃)

Fig.5 Normalized VGS(th) vs.Tj Fig.6 Normalized RDSON vs. TJ

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 WSF3040
N-Ch MOSFET

10000 1000.00
F=1.0MHz

100.00 10us

Ciss 100us
Capacitance (pF)

1000
10.00
1ms

ID (A)
10ms
1.00
Coss 100ms
100 DC
Crss
0.10
TC=25℃
Single Pulse
0.01
10
0.1 1 10 100 1000
1 5 9 13 17 21 25
VDS Drain to Source Voltage(V) VDS (V)

Fig.7 Capacitance Fig.8 Safe Operating Area

1
Normalized Thermal Response (RθJC)

DUTY=0.5

0.2

0.1 0.1
0.05
0.02
0.01
P DM T ON
SINGLE
0.01
T

D = TON/T
TJpeak = TC+P DMXRθJC

0.001
0.00001 0.0001 0.001 0.01 0.1 1
t , Pulse Width (s)

Fig.9 Normalized Maximum Transient Thermal Impedance

Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform

www.winsok.tw Page 1 Dec.2014

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