WSP4406

N-Ch MOSFET

General Description Product Summery

The WSP4406 is the highest performance

BVDSS RDSON ID
trench N-Ch MOSFET with extreme high
cell density , which provide excellent 30V 9.5mΩ 12A
RDSON and gate charge for most of the
synchronous buck converter applications .
Applications
The WSP4406 meet the RoHS and Green
Product requirement 100% EAS z High Frequency Point-of-Load Synchronous
guaranteed with full function reliability Buck Converter for MB/NB/UMPC/VGA
approved.
z Networking DC-DC Power System
z Load Switch
Features
S0P-8 Pin Configuration

z Advanced high cell density Trench technology

z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available

Absolute Maximum Ratings

Symbol Parameter Rating Units

VDS Drain-Source Voltage 30 V
VGS Gate-Source Voltage ±20 V
1
ID@TC=25℃ Continuous Drain Current, VGS @ 10V 12 A
1
ID@TC=70℃ Continuous Drain Current, VGS @ 10V 10 A
2
IDM Pulsed Drain Current 40 A
3
EAS Single Pulse Avalanche Energy 25 mJ
IAS Avalanche Current 23 A
PD@TA=25℃ Total Power Dissipation4 3.1 W
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Thermal Data

Symbol Parameter Typ. Max. Unit

RθJA Thermal Resistance Junction-Ambient 1
--- 65 ℃/W
1
RθJC Thermal Resistance Junction-Case --- 20 ℃/W

www.winsok.tw Page 1 Dec.2014

 WSP4406
N-Ch MOSFET

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

Symbol Parameter Conditions Min. Typ. Max. Unit

BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 --- --- V
△BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.023 --- V/℃
VGS=10V , ID=12A --- 9.5 12
RDS(ON) Static Drain-Source On-Resistance2 mΩ
VGS=4.5V , ID=10A --- 13 18
VGS(th) Gate Threshold Voltage 1.2 1.9 2.5 V
VGS=VDS , ID =250uA
△VGS(th) VGS(th) Temperature Coefficient --- -5.08 --- mV/℃
VDS=24V , VGS=0V , TJ=25℃ --- --- 1
IDSS Drain-Source Leakage Current uA
VDS=24V , VGS=0V , TJ=55℃ --- --- 5
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA
gfs Forward Transconductance VDS=5V , ID=8A --- 50 --- S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.5 3 Ω
Qg Total Gate Charge (4.5V) --- 6.3 ---
Qgs Gate-Source Charge VDS=15V , VGS=4.5V , ID=12A --- 2.9 --- nC
Qgd Gate-Drain Charge --- 2.0 ---
Td(on) Turn-On Delay Time --- 8 14
Tr Rise Time VDD=15V , VGS=10V , RG=6Ω --- 10 17
ns
Td(off) Turn-Off Delay Time ID=1A ,RL=15Ω --- 23 42
Tf Fall Time --- 4.5 12
Ciss Input Capacitance --- 770 890
Coss Output Capacitance VDS=15V , VGS=0V , f=1MHz --- 130 183 pF
Crss Reverse Transfer Capacitance --- 76 110

Guaranteed Avalanche Characteristics

Symbol Parameter Conditions Min. Typ. Max. Unit

5
EAS Single Pulse Avalanche Energy VDD=25V , L=0.1mH , IAS=23A 24.6 --- --- mJ

Diode Characteristics

Symbol Parameter Conditions Min. Typ. Max. Unit

1,6
IS Continuous Source Current --- --- 9 A
2,6
VG=VD=0V , Force Current
ISM Pulsed Source Current --- --- 36 A
2
VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1.1 V
trr Reverse Recovery Time --- 18 --- nS
Qrr Reverse Recovery Charge IF=12A , dI/dt=100A/µs , TJ=25℃ --- 10 --- nC

Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t<10sec.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=23A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

www.winsok.tw Page 2 Dec.2014

 WSP4406
N-Ch MOSFET

Typical Characteristics
36
22
VGS=10V ID=12A
30
VGS=7V
ID Drain Current (A)

VGS=5V
24
18
VGS=4.5V

RDSON (mΩ)
18 VGS=3V

12
14

0
10
0 0.5 1 1.5 2 2.5 3
2 4 6 8 10
VDS , Drain-to-Source Voltage (V) VGS (V)

Fig.2 On-Resistance vs. G-S Voltage

Fig.1 Typical Output Characteristics
12 10

VDS=15V
10 ID=12A
VGS Gate to Source Voltage (V)

7.5
IS Source Current(A)

6 5

TJ=150℃ TJ=25℃
4
2.5

0 0
0 0.3 0.6 0.9 1.2 0 5 10 15 20
VSD , Source-to-Drain Voltage (V) QG , Total Gate Charge (nC)

Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics

1.5 2.0
Normalized On Resistance
Normalized VGS(th)

1 1.5

0.5 1.0

0.5
0
-50 0 50 100 150 -50 0 50 100 150
TJ ,Junction Temperature ( ℃) TJ , Junction Temperature (℃)

Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ

www.winsok.tw Page 3 Dec.2014

 WSP4406
N-Ch MOSFET

10000
F=1.0MHz 100.00

100us
10.00
Ciss
Capacitance (pF)

1000 1ms

10ms

ID (A)
1.00
Coss
100ms
100
Crss
0.10
o DC
TA=25 C
Single Pulse
10
0.01
1 5 9 13 17 21 25
VDS Drain to Source Voltage(V) 0.01 0.1 1 10 100
VDS (V)

Fig.7 Capacitance Fig.8 Safe Operating Area

1
Normalized Thermal Response (RθJA)

DUTY=0.5

0.2

0.1 0.1

0.05

0.01 P DM T ON
0.01
T

D = TON/T
SINGLE
TJpeak = TA+P DMXRθJA

0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
t , Pulse Width (s)

Fig.9 Normalized Maximum Transient Thermal Impedance

Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform

www.winsok.tw Page 4 Dec.2014

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