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HR 13003

The document provides specifications for the HR13003 NPN transistor in a TO-126 package, highlighting its features such as high total power dissipation of 1.25W and maximum ratings including a collector-base voltage of 600V. It details electrical characteristics like breakdown voltages, collector current, and DC current gain. Additionally, it includes classification information for the transistor's gain range.

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11 views2 pages

HR 13003

The document provides specifications for the HR13003 NPN transistor in a TO-126 package, highlighting its features such as high total power dissipation of 1.25W and maximum ratings including a collector-base voltage of 600V. It details electrical characteristics like breakdown voltages, collector current, and DC current gain. Additionally, it includes classification information for the transistor's gain range.

Uploaded by

ribasi5405
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO.

, LTD

TO-126 Plastic-Encapsulate Transistors

HR13003 TRANSISTOR (NPN) TO-126

FEATURES
High total power disspation. (pc=1.25w)
MARKING:MJE13003
1.BASE

2.COLLECTOR
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
3.EMITTER 123
Symbol Parameter Value Units
VCBO Collector-Base Voltage 600 V
VCEO Collector-Emitter Voltage 480 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 1 A
PC Collector Dissipation 1.25 W
TJ, Tstg Junction and Storage Temperature -55-150 ℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC= 100μA, IE=0 600 V

Collector-emitter breakdown voltage V(BR)CEO IC= 1mA,IB=0 480 V

Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 6 V

Collector cut-off current ICBO VCB= 600V,IE=0 100 µA

Emitter cut-off current IEBO VEB= 6 V,IC=0 100 µA

hFE1 VCE= 10V, IC= 250 µA 5


DC current gain
hFE2 VCE= 10 V, IC= 200mA 9 40

Collector-emitter saturation voltage VCE(sat) IC=200mA, IB= 40mA 0.8 V

Base-emitter saturation voltage VBE(sat) IC=200mA, IB= 40mA 1.2 V

VCE=10V, IC=100mA
Transition frequency fT 5 MHz
f =1MHz
Fall time tf 0.8 µs
IC=1A, IB1=-IB2=0.2A
VCC=100V
Storage time ts 3 .5 µs

CLASSIFICATION OF hFE2
Rank

Range 9-15 15-20 20-25 25-30 30-35 35-40


Typical Characteristics HR13003

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