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BDX 33 C

The BDX33C is a Silicon NPN Darlington Power Transistor with a collector-emitter sustaining voltage of 100V and a minimum DC current gain of 750 at 3A. It is designed for general-purpose amplifier and low-speed switching applications, with a maximum collector current of 10A and power dissipation of 70W. ISC reserves the right to change the datasheet content and disclaims liability for the product's suitability for specialized applications.

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15 views2 pages

BDX 33 C

The BDX33C is a Silicon NPN Darlington Power Transistor with a collector-emitter sustaining voltage of 100V and a minimum DC current gain of 750 at 3A. It is designed for general-purpose amplifier and low-speed switching applications, with a maximum collector current of 10A and power dissipation of 70W. ISC reserves the right to change the datasheet content and disclaims liability for the product's suitability for specialized applications.

Uploaded by

amskroud brahim
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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isc Silicon NPN Darlington Power Transistor BDX33C

DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 100V(Min)
·High DC Current Gain
: hFE= 750(Min) @IC= 3A
·Complement to Type BDX34C
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation

APPLICATIONS
·Designed for general purpose amplifier and low speed
switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)


SYMBOL PARAMETER VALUE UNIT

VCBO Collector-Base Voltage 100 V

VCEO Collector-Emitter Voltage 100 V

VEBO Emitter-Base Voltage 5 V

IC Collector Current-Continuous 10 A

ICM Collector Current-Peak 15 A

IB Base Current-Continuous 0.25 A

Collector Power Dissipation


PC 70 W
@ TC=25℃

TJ Junction Temperature 150 ℃

Tstg Storage Temperature Range -65~150 ℃

THERMAL CHARACTERISTICS

SYMBOL PARAMETER MAX UNIT

Rth j-c Thermal Resistance,Junction to Case 1.78 ℃/W

isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark


isc Silicon NPN Darlington Power Transistor BDX33C

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 100 V

VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA 2.5 V

VBE(on) Base-Emitter On Voltage IC= 3A; VCE= 3V 2.5 V

ICBO Collector Cutoff Current VCB= 100V; IE= 0 0.2 mA

ICEO Collector Cutoff Current VCE= 50V; IB= 0 0.5 mA

IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 mA

hFE DC Current Gain IC= 3A; VCE= 3V 750

NOTICE：
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.

isc website： www.iscsemi.com 2 isc & iscsemi is registered trademark

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