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Module 2b - BJT - AC

The document outlines the grading evaluation for the EEE 2103 Electronic Devices course at AIUB, detailing the weight of attendance, assignments, quizzes, midterm, and final exams for both halves of the semester. It includes a calendar of topics and quizzes scheduled throughout the semester, along with chapter objectives focused on BJT and FET analysis. Additionally, it covers concepts related to BJT small signal analysis, transistor modeling, and AC equivalent circuits.
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0% found this document useful (0 votes)
13 views13 pages

Module 2b - BJT - AC

The document outlines the grading evaluation for the EEE 2103 Electronic Devices course at AIUB, detailing the weight of attendance, assignments, quizzes, midterm, and final exams for both halves of the semester. It includes a calendar of topics and quizzes scheduled throughout the semester, along with chapter objectives focused on BJT and FET analysis. Additionally, it covers concepts related to BJT small signal analysis, transistor modeling, and AC equivalent circuits.
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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4/28/2025

Grades Evaluation
1st Half of the semester
EEE 2103: • (5) Attendance – 10%
40% of
Electronic Devices •

(OBE) Assignment – 20%
Quizzes – 30%
semester’s
-Ebad Zahir weight
• Midterm – 40%
AMERICAN INTERNATIONAL UNIVERSITY-
BANGLADESH (AIUB)
2nd Half of the semester
Faculty of Engineering
• (5) Attendance – 10%
Department of Electrical and Electronic Engineering
• Quizzes – 50% 60% of
Undergraduate Program
semester’s
• Final – 40% weight
.
2

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WEEK Sunday Tuesday TOPIC


#10 27th April 29th April
BJT AC
#11 4th May 6th May

13th May
#12 Buddha Purnima
Calendar
17th May (online)
FET DC Topic – 4
18th May
post- #13
Quiz-3
20th May
BJT AC Analysis
midterm #14 25th May 27th May
Lecture: Week-10 and Week-11
3rd June FET AC
#15 1st June
Quiz-4
#16 Eid Holiday Eid Holiday
#17 FINAL EXAM (June 16)
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Chapter Objectives Review of ACTIVE CIRCUITS


• Become familiar with the re model for the BJT transistor.
• Learn to use the equivalent model to find the important ac
parameters for an amplifier.
• Understand the effects of a source resistance and load resistor
on the overall gain and characteristics of an amplifier.
• Become aware of the general ac characteristics of a variety of
important BJT configurations.
• Begin to understand the advantages associated with the two-
port systems approach to single- and multistage amplifiers.

5 6

• Turning off the independent source affects the


dependent source. RECAP: Dynamic Resistance
• For AC, the varying
input voltage/current
will have an
instantaneous or
dynamic relationship.
• Thus the specific
changes in current and
voltage is obtained
using equation:

rd = ∆VD/ ∆ID
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The base to emitter diode provides an effective resistance at the


emitter, even when it is grounded. This effective resistance is in RECAP: Problem from previous lecture
series with the emitter.

26mV
re 
IE
10mV 1.6V

-1.7V
-10mV
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BJT: small signal analysis

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II IO

VI VO
ZI ZO BJT – small signal analysis
• In a linear amplifier, the principle of superposition applies

• The response of the transistor amplifier excited by multiple


independent sources is the sum of the responses of the
circuit to each of the input signals alone.

• So Total Response = DC Response + AC Response

• Both DC and AC analysis can be done separately

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• Magnitude of the AC signal applied for


amplification must be small so that:
ib • The transistor operates in the
linear region for the whole cycle
of input.
0 • The transistor is never driven
+ into saturation or cut-off region
• Then the transistor will operate as a
IB linear amplifier since iC=iB holds in the
active region.

Ib

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BJT TRANSISTOR MODELING

• For finding AC response of a BJT amplifier


• The AC equivalent circuit of the amplifier is determined.
• The transistor is replaced by its model

• A model is a combination of circuit elements,


properly chosen, that best approximates the actual
behavior of a semiconductor device under specific
operating conditions.
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re model for common emitter


Transistor Model

r model
e hybrid model
re = Dynamic Resistance
Fails to account for Limited to specified
the output impedance operating condition
and feedback effect in order to obtain
from output to input accurate result

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re model for common base re model for common collector


• For the CC configuration, the model defined for
the common-emitter configuration is normally
applied rather than defining a model for the
common-collector configuration.

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AC Equivalent Circuit

• AC Equivalent Circuit is obtained by:


1. Setting all DC sources to 0 and replacing them by a
short circuit equivalent
2. Replacing all capacitors by a short circuit equivalent
3. Removing all elements bypassed by the short circuit
equivalents introduced in the previous two steps.
Basic BJT Amplifier AC Equivalent Circuit
4. Redrawing the network in a more convenient and
logical form

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II IO

VI
ZI ZO V O

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EMITTER-FOLLOWER
CONFIGURATION

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Impedance Calculations
COMMON BASE
CONFIGURATION

Gain
Calculations

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Impedance Calculations EFFECT OF RL AND RS

• The loaded voltage gain of an amplifier is always less than the no-load gain.
Gain Calculations • For a particular design, the larger the level of R L , the greater is the level of ac gain.
• For a particular amplifier, the smaller the internal resistance of the signal source, the
• greater is the overall gain.

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Cascaded Systems

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Example

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