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IGBT

The Insulated Gate Bipolar Transistor (IGBT) combines the features of BJT and MOSFET, allowing it to handle high currents and voltages with low input signals. It has advantages such as high voltage handling, high input impedance, and low ON-state resistance, but also has disadvantages like lower switching speed compared to MOSFET and unidirectionality. IGBTs are widely used in applications such as electric vehicles, air conditioners, and power supplies due to their efficiency and fast switching capabilities.

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34 views2 pages

IGBT

The Insulated Gate Bipolar Transistor (IGBT) combines the features of BJT and MOSFET, allowing it to handle high currents and voltages with low input signals. It has advantages such as high voltage handling, high input impedance, and low ON-state resistance, but also has disadvantages like lower switching speed compared to MOSFET and unidirectionality. IGBTs are widely used in applications such as electric vehicles, air conditioners, and power supplies due to their efficiency and fast switching capabilities.

Uploaded by

meghshamjade50
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as DOCX, PDF, TXT or read online on Scribd
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Q1. What is IGBT?

The IGBT or Insulated Gate Bipolar Transistor is the combination of BJT and
MOSFET. Its name also implies the fusion between them. “Insulated Gate” refers to the
input part of MOSFET having very high input impedance. It does not draw any input
current rather it operates on the voltage at its gate terminal. “Bipolar” refers to the output
part of the BJT having bipolar nature where the current flow is due to both types of charge
carriers. It allows it to handle very large currents and voltages using small voltage signals.
This hybrid combination makes the IGBT a voltage-controlled device.
Q2. Draw the symbol of IGBT.

Q3. What is punch through effect in IBGT?


If we go on increasing the reverse bias voltage then at a time instant the width of the
base becomes zero. This effect is called Punch through effect.
Q4. Draw Output characteristics of IGBT.

Q5. What are the advantages & disadvantages of IGBT?


IGBT as a whole has the advantages of both BJT and MOSFET.
1. It has higher voltage and current handling capabilities.
2. It has very high input impedance.
3. It can switch very high currents using very low voltage.
4. It is voltage-controlled i.e. it has no input current and low input losses.
5. The gate drive circuitry is simple and cheap.
6. It can be easily switched ON by applying positive voltage and OFF by applying zero
or slightly negative voltage.
7. It has very low ON-state resistance
8. It has a high current density, enabling it to have a smaller chip size.
9. It has a higher power gain than both BJT and MOSFET.
10. It has a higher switching speed than BJT.
Disadvantages:
1. It has a lower switching speed than MOSFET.
2. It is unidirectional it cannot conduct in reverse.
3. It cannot block higher reverse voltage.
4. It is costlier than BJT and MOSFET.
5. It has latching problems due to the PNPN structure resembling thyristor.

Q6. What are the applications of IGBT?


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power
semiconductor device, noted for high efficiency and fast switching. It switches electric
power in many modern appliances: electric cars, variable speed refrigerators, air-
conditioners, and even stereo systems with switching amplifiers. It is used in SMPS, UPS,
Choppers, AC and DC Motors drives offering speed control, Solar Inverters etc., Since it is
designed to rapidly turn on and off, amplifiers that use it often synthesize complex
waveforms with pulse width modulation and low-pass filters.

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