STB20NM50FD

STF20NM50FD - STP20NM50FD
N-channel 500 V, 0.22 Ω, 20 A D2PAK, TO-220FP, TO-220
FDmesh™ Power MOSFET (with fast diode)

Features
RDS(on)
Type VDSS RDS(on)* Qg ID
max

STB20NM50FD 500 V < 0.25 Ω 8.36 Ω* nC 20 A

STF20NM50FD 500 V < 0.25 Ω 8.36 Ω* nC 20 A 3 3
2
STP20NM50FD 500 V < 0.25 Ω 8.36 Ω* nC 20 A 1
2
1

TO-220FP TO-220
■ High dv/dt and avalanche capabilities 3
1
■ 100% avalanche tested
D²PAK
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Tight process control and high manufacturing
yields Figure 1. Internal schematic diagram

Application
■ Switching applications

Description
The FDmesh™ associates all advantages of
reduced on-resistance and fast switching with an
intrinsic fast-recovery body diode. It is therefore
strongly recommended for bridge topologies, in
particular ZVS phase-shift converters.

Table 1. Device summary

Order codes Marking Package Packaging

STB20NM50FD B20NM50FD D²PAK Tape and reel

STF20NM50FD F20NM50FD TO-220FP Tube
STP20NM50FD P20NM50FD TO-220 Tube

April 2008 Rev 9 1/16/

www.st.com 16
Contents STB20NM50FD - STF20NM50FD - STP20NM50FD

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6

3 Test circuit ................................................ 9

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

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STB20NM50FD - STF20NM50FD - STP20NM50FD Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Value
Symbol Parameter D²PAK Unit
TO-220FP
TO-220

VDS Drain-source voltage (VGS=0) 500 V

VGS Gate-source voltage ± 30 V

ID Drain current (continuous) at TC = 25 °C 20 20 (1) A

ID Drain current (continuous) at TC = 100 °C 14 14(1) A

IDM (2) Drain current (pulsed) 80 80(1) A

PTOT Total dissipation at TC = 25 °C 192 45 W

dv/dt (3) Peak diode recovery voltage slope 20 V/ns

Insulation withstand voltage (RMS) from all three

VISO leads to external heat sink -- 2500 V
(t=1 s;TC=25 °C)
Tstg Storage temperature -65 to 150 °C
Tj Operating junction temperature 150 °C
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤ 20 A, di/dt ≤ 200 A/µs, VDD = 80% V(BR)DSS

Table 3. Thermal data

Symbol Parameter TO-220 D²PAK TO-220FP Unit

Rthj-case Thermal resistance junction-case max 0.65 2.8 °C/W

Rthj-amb Thermal resistance junction-amb max 62.5 -- 62.5 °C/W
Rthj-pcb Thermal resistance junction-pcb max -- 30 -- °C/W
Maximum lead temperature for
Tl 300 °C
soldering purposes

Table 4. Avalanche characteristics

Symbol Parameter Max value Unit

Avalanche current, repetitive or not-repetitive

IAS 10 A
(pulse width limited by Tj max)
Single pulse avalanche energy
EAS 700 mJ
(starting Tj = 25 °C, ID = IAS, VDD = 35 V)

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Electrical characteristics STB20NM50FD - STF20NM50FD - STP20NM50FD

2 Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 5. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

Drain-source breakdown
V(BR)DSS ID = 250 µA, VGS= 0 500 V
voltage

Zero gate voltage drain VDS = Max rating, 1 µA

IDSS
current (VGS = 0) VDS = Max rating,@125 °C 10 µA

Gate body leakage current

IGSS VGS = ± 30 V ± 100 nA
(VDS = 0)

VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 3 4 5 V

Static drain-source on
RDS(on) VGS= 10 V, ID= 10 A 0.22 0.25 Ω
resistance

Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit

VDS > ID(on) x RDS(on)max,

gfs(1) Forward transconductance 9 S
ID= 10 A

Input capacitance
Ciss 1380 pF
Output capacitance VDS = 25V, f =1 MHz,
Coss 290 pF
Reverse transfer VGS = 0
Crss 40 pF
capacitance
Equivalent output
Coss eq.(2) VGS = 0, VDS = 0 to 400 V 130 pF
capacitance
f=1 MHz Gate DC Bias=0
Rg Gate input resistance Test signal level=20 mV 2.8 Ω
open drain

Qg Total gate charge VDD = 400 V, ID = 20 A 38 53 nC

Qgs Gate-source charge VGS = 10 V 18 nC
Qgd Gate-drain charge (see Figure 16) 10 nC

1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS

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STB20NM50FD - STF20NM50FD - STP20NM50FD Electrical characteristics

Table 7. Switching times

Symbol Parameter Test conditions Min Typ Max Unit

VDD = 250 V, ID = 10 A,
td(on) Turn-on delay time 22 ns
RG = 4.7 Ω, VGS = 10 V
tr Rise time 20 ns
(see Figure 15)
tr(Voff) Off-voltage rise time VDD = 400 V, ID = 20 A, 6 ns
tf Fall time RG = 4.7 Ω, VGS = 10 V 15 ns
tc Cross-over time (see Figure 15) 30 ns

Table 8. Source drain diode

Symbol Parameter Test conditions Min Typ Max Unit

ISD Source-drain current 20 A

ISDM (1) Source-drain current (pulsed) 80 A
VSD(2) Forward on voltage ISD = 20 A, VGS=0 1.5 V
trr Reverse recovery time ISD =20 A, di/dt =100 A/µs, 245 ns
Qrr Reverse recovery charge VDD = 60 V, TJ=150 °C 2 nC
IRRM Reverse recovery current (see Figure 17) 16 A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

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Electrical characteristics STB20NM50FD - STF20NM50FD - STP20NM50FD

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area for TO-220 / Figure 3. Thermal impedance for TO-220 /
D²PAK D²PAK

Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP

Figure 6. Output characteristics Figure 7. Transfer characteristics

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STB20NM50FD - STF20NM50FD - STP20NM50FD Electrical characteristics

Figure 8. Transconductance Figure 9. Static drain-source on resistance

Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations

Figure 12. Normalized gate threshold voltage Figure 13. Normalized on resistance vs
vs temperature temperature

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Electrical characteristics STB20NM50FD - STF20NM50FD - STP20NM50FD

Figure 14. Source-drain diode forward

characteristics

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STB20NM50FD - STF20NM50FD - STP20NM50FD Test circuit

3 Test circuit

Figure 15. Switching times test circuit for Figure 16. Gate charge test circuit
resistive load

Figure 17. Test circuit for inductive load Figure 18. Unclamped Inductive load test
switching and diode recovery times circuit

Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform

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Package mechanical data STB20NM50FD - STF20NM50FD - STP20NM50FD

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK®

packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com

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STB20NM50FD - STF20NM50FD - STP20NM50FD Package mechanical data

TO-220 mechanical data

mm inch
Dim
Min Typ Max Min Typ Max
A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034
b1 1.14 1.70 0.044 0.066
c 0.48 0.70 0.019 0.027
D 15.25 15.75 0.6 0.62
D1 1.27 0.050
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F 1.23 1.32 0.048 0.051
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L30 28.90 1.137
∅P 3.75 3.85 0.147 0.151
Q 2.65 2.95 0.104 0.116

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Package mechanical data STB20NM50FD - STF20NM50FD - STP20NM50FD

TO-220FP mechanical data

mm. inch
Dim.
Min. Typ Max. Min. Typ. Max.
A 4.40 4.60 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.70 0.017 0.027
F 0.75 1.00 0.030 0.039
F1 1.15 1.50 0.045 0.067
F2 1.15 1.50 0.045 0.067
G 4.95 5.20 0.195 0.204
G1 2.40 2.70 0.094 0.106
H 10 10.40 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.80 10.60 0.385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.90 16.40 0.626 0.645
L7 9 9.30 0.354 0.366
Dia 3 3.2 0.118 0.126

E
A

D
B

L3
L6
L7
F1

Dia
F

G1

G
H

F2

1 2 3
L5
L2 L4
7012510-I

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STB20NM50FD - STF20NM50FD - STP20NM50FD Package mechanical data

D²PAK (TO-263) mechanical data

mm inch
Dim
Min Typ Max Min Typ Max
A 4.40 4.60 0.173 0.181
A1 0.03 0.23 0.001 0.009
b 0.70 0.93 0.027 0.037
b2 1.14 1.70 0.045 0.067
c 0.45 0.60 0.017 0.024
c2 1.23 1.36 0.048 0.053
D 8.95 9.35 0.352 0.368
D1 7.50 0.295
E 10 10.40 0.394 0.409
E1 8.50 0.334
e 2.54 0.1
e1 4.88 5.28 0.192 0.208
H 15 15.85 0.590 0.624
J1 2.49 2.69 0.099 0.106
L 2.29 2.79 0.090 0.110
L1 1.27 1.40 0.05 0.055
L2 1.30 1.75 0.051 0.069
R 0.4 0.016
V2 0° 8° 0° 8°

0079457_M

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Packaging mechanical data STB20NM50FD - STF20NM50FD - STP20NM50FD

5 Packaging mechanical data

D2PAK FOOTPRINT

TAPE AND REEL SHIPMENT

REEL MECHANICAL DATA

mm inch
DIM.
MIN. MAX. MIN. MAX.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0795
G 24.4 26.4 0.960 1.039
N 100 3.937
T 30.4 1.197

BASE QTY BULK QTY

TAPE MECHANICAL DATA
1000 1000
mm inch
DIM.
MIN. MAX. MIN. MAX.
A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626
D 1.5 1.6 0.059 0.063
D1 1.59 1.61 0.062 0.063
E 1.65 1.85 0.065 0.073
F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0.075 0.082
R 50 1.574
T 0.25 0.35 0.0098 0.0137
W 23.7 24.3 0.933 0.956
* on sales type

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STB20NM50FD - STF20NM50FD - STP20NM50FD Revision history

6 Revision history

Table 9. Document revision history

Date Revision Changes

21-Jun-2004 8
Figure 4: Safe operating area for TO-220FP and Figure 5: Thermal
21-Apr-2008 9
impedance for TO-220FP added.

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 STB20NM50FD - STF20NM50FD - STP20NM50FD

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