FJA4210
FJA4210
Audio Power Amplifier
• High Current Capability : IC= -10A
• High Power Dissipation
• Wide S.O.A
• Complement to FJA4310
1 TO-3P
1.Base 2.Collector 3.Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage -200 V
VCEO Collector-Emitter Voltage -140 V
VEBO Emitter-Base Voltage -6 V
IC Collector Current (DC) -10 A
IB Base Current (DC) -1.5 A
PC Collector Dissipation (TC=25°C) 100 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 55 ~ 150 °C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
BVCBO Collector-Base Breakdown Voltage IC=-5mA, IE=0 -200 V
BVCEO Collector-Emitter Breakdown Voltage IC=-50mA, RBE=∞ -140 V
BVEBO Emitter-Base Breakdown Voltage IE=-5mA, IC=0 -6 V
ICBO Collector Cut-off Current VCB=-200V, IE=0 -10 µA
IEBO Emitter Cut-off Current VEB=-6V, IC=0 -10 µA
hFE * DC Current Gain VCE=-4V, IC=-3A 50 180
VCE(sat) Collector-Emitter Saturation Voltage IC=-5A, IB=-0.5A -0.5 V
Cob Output Capacitance VCB=-10V, f=1MHz 400 pF
fT Current Gain Bandwidth Product VCE=-5V, IC=-1A 30 MHz
* Pulse Test : PW=20µs
hFE Classification
Classification R O Y
hFE 50 ~ 100 70 ~ 140 90 ~ 180
©2002 Fairchild Semiconductor Corporation Rev. B, June 2002
FJA4210
Typical Characteristics
IB = - 300mA IB = - 250mA 1000
-10
IB = - 400mA VCE = - 4 V
-9
IB = - 200mA
IC [A], COLLECTOR CURRENT
-8 o
o Ta = 25 C
hFE, DC CURRENT GAIN
IB = - 150mA Ta = 125 C
-7
-6 IB = - 100mA
100 o
-5 Ta = - 25 C
-4
IB = - 50mA
-3
IB = - 20mA
-2
-1
10
-0
-0.1 -1 -10
-0 -1 -2 -3 -4
VCE [V], COLLECTOR-EMITTER VOLTAGE IC [A], COLLECTOR CURRENT
Figure 1. Static Characterstic Figure 2. DC current Gain
-3.0 -1
IC = 10 IB
VCE(sat) [V], SATURATION VOLTAGE
VCE(sat) [V], SATURATION VOLTAGE
-2.5
-2.0
-1.5 -0.1
o
-1.0 Ta = 125 C
o
IC= - 10A Ta = 25 C
o
-0.5 Ta = - 25 C
IC= - 5A
-0.0 -0.01
-0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -0.01 -0.1 -1 -10
IB [A], BASE CURRENT IC [A], COLLECTOR CURRENT
Figure 3. VCE(sat) vs. IB Characteristics Figure 4. Collector-Emitter Saturation Voltage
-10
VCE = - 4 V t=10ms
IC (Pulse)
-10
IC [A], COLLECTOR CURRENT
-8
IC [A], COLLECTOR CURRENT
IC (DC) t=100ms
-6
o
Ta = 25 C
-4 -1
o
-2 Ta = 125 C
o o
Ta = - 25 C TC = 25 C
Single Pulse
-0 -0.1
-0.0 -0.5 -1.0 -1.5 -2.0 -10 -100
VBE [V], Base-Emitter On VOLTAGE VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Base-Emitter On Voltage Figure 6. Forward Bias Safe Operating Area
©2002 Fairchild Semiconductor Corporation Rev. B, June 2002
FJA4210
Typical Characteristics (Continued)
140
PC[W], COLLECTOR POWER DISSIPATION
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
o
TC[ C], CASE TEMPERATURE
Figure 7. Power Derating
©2002 Fairchild Semiconductor Corporation Rev. B, June 2002
FJA4210
Package Demensions
TO-3P
15.60 ±0.20
4.80 ±0.20
13.60 ±0.20
3.80 ±0.20
ø3.20 ±0.10 +0.15
9.60 ±0.20 1.50 –0.05
18.70 ±0.20
12.76 ±0.20
19.90 ±0.20
23.40 ±0.20
13.90 ±0.20
2.00 ±0.20
3.50 ±0.20
3.00 ±0.20
16.50 ±0.30
1.00 ±0.20 1.40 ±0.20
+0.15
0.60 –0.05
5.45TYP 5.45TYP
[5.45 ±0.30] [5.45 ±0.30]
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. B, June 2002
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™ FASTr™ OPTOLOGIC® SMART START™ VCX™
Bottomless™ FRFET™ OPTOPLANAR™ SPM™
CoolFET™ GlobalOptoisolator™ PACMAN™ Stealth™
CROSSVOLT™ GTO™ POP™ SuperSOT™-3
DOME™ HiSeC™ Power247™ SuperSOT™-6
EcoSPARK™ I2C™ PowerTrench® SuperSOT™-8
E2CMOS™ ISOPLANAR™ QFET™ SyncFET™
EnSigna™ LittleFET™ QS™ TinyLogic™
FACT™ MicroFET™ QT Optoelectronics™ TruTranslation™
FACT Quiet series™ MicroPak™ Quiet Series™ UHC™
FAST® MICROWIRE™ SLIENT SWITCHER® UltraFET®
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation Rev. H7
