FJA4210 — PNP Epitaxial Silicon Transistor

October 2008

FJA4210
PNP Epitaxial Silicon Transistor
• Audio Power Amplifier
• High Current Capability : IC= -10A
• High Power Dissipation
• Wide S.O.A
• Complement to FJA4310

1 TO-3P
1.Base 2.Collector 3.Emitter

Absolute Maximum Ratings* T a = 25°C unless otherwise noted

Symbol Parameter Ratings Units

VCBO Collector-Base Voltage -200 V
VCEO Collector-Emitter Voltage -140 V
VEBO Emitter-Base Voltage -6 V
IC Collector Current (DC) -10 A
IB Base Current (DC) -1.5 A
PC Collector Dissipation (TC =25°C) 100 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 55 ~ 150 °C

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Electrical Characteristics* Ta=25°C unless otherwise noted

Symbol Parameter Test Condition Min. Typ. Max. Units
BVCBO Collector-Base Breakdown Voltage IC=-5mA, IE=0 -200 V
BVCEO Collector-Emitter Breakdown Voltage IC=-50mA, R BE=¥ -140 V
BVEBO Emitter-Base Breakdown Voltage IE=-5mA, IC=0 -6 V
ICBO Collector Cut-off Current VCB=-200V, IE=0 -10 mA
IEBO Emitter Cut-off Current VEB=-6V, IC=0 -10 mA
hFE * DC Current Gain VCE=-4V, IC=-3A 50 180
VCE(sat) Collector-Emitter Saturation Voltage IC=-5A, IB=-0.5A -0.5 V
Cob Output Capacitance VCB=-10V, f=1MHz 400 pF
fT Current Gain Bandwidth Product VCE=-5V, IC=-1A 30 MHz
* Pulse Test: Pulse Width£300ms, Duty Cycle£2%

hFE Classification
Classification R O Y
hFE 50 ~ 100 70 ~ 140 90 ~ 180

© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com

FJA4210 Rev. C1 1
 FJA4210 — PNP Epitaxial Silicon Transistor
Typical Characteristics

IB = - 300mA IB = - 250mA 1000

-10
IB = - 400mA VCE = - 4 V
-9

IB = - 200mA
-8
IC [A], COLLECTOR CURRENT

o
o Ta = 25 C

hFE, DC CURRENT GAIN

IB = - 150mA Ta = 125 C
-7

-6 IB = - 100mA

-5 100 o
Ta = - 25 C

-4
IB = - 50mA

-3
IB = - 20mA
-2

-1

-0 10
-0 -1 -2 -3 -4 -0.1 -1 -10

VCE [V], COLLECTOR-EMITTER VOLTAGE IC [A], COLLECTOR CURRENT

Figure 1. Static Characterstic Figure 2. DC current Gain

-3.0 -1

IC = 10 IB
VCE(sat) [V], SATURATION VOLTAGE

VCE(sat) [V], SATURATION VOLTAGE

-2.5

-2.0

-1.5 -0.1

o
-1.0 Ta = 125 C

o
IC= - 10A Ta = 25 C
o
-0.5 Ta = - 25 C
IC= - 5A

-0.0 -0.01
-0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -0.01 -0.1 -1 -10

IB [A], BASE CURRENT IC [A], COLLECTOR CURRENT

Figure 3. VCE(sat) vs. IB Characteristics Figure 4. Collector-Emitter Saturation Voltage

-10

VCE = - 4 V t=10ms
IC (Pulse)

-10
IC [A], COLLECTOR CURRENT

-8
IC [A], COLLECTOR CURRENT

IC (DC) t=100ms

-6

o
Ta = 25 C

-4 -1

o
-2 Ta = 125 C
o o
Ta = - 25 C TC = 25 C
Single Pulse
-0 -0.1
-0.0 -0.5 -1.0 -1.5 -2.0 -10 -100

VBE [V], Base-Emitter On VOLTAGE VCE [V], COLLECTOR-EMITTER VOLTAGE

Figure 5. Base-Emitter On Voltage Figure 6. Forward Bias Safe Operating Area

© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com

FJA4210 Rev. C1 2
 FJA4210 — PNP Epitaxial Silicon Transistor
Typical Characteristics (Continued)

140
PC[W], COLLECTOR POWER DISSIPATION

120

100

80

60

40

20

0
0 25 50 75 100 125 150 175

o
TC[ C], CASE TEMPERATURE

Figure 7. Power Derating

© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com

FJA4210 Rev. C1 3
 FJA4210 — PNP Epitaxial Silicon Transistor
Package Dimension (TO-3P)

5.00
4.60

15.80 1.65
15.40 1.45
5.20
4.80
(R0.50)

20.10
19.70 18.90
18.50

3.70
3.30

(1.85)
2.20
1.80
2.60
2.20
3.20 20.30
2.80 19.70

1.20
0.55 0.80

1 3

5.45 5.45 0.75

0.55

(R0.50)

NOTES:
A) THIS PACKAGE CONFORMS TO EIAJ
SC-65 PACKAGING STANDARD.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONING AND TOLERANCING PER
ASME14.5 1973.
D) DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH, AND TIE BAR EXTRUSIONS.
E) DRAWING FILE NAME: TO3P03AREV2.

© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com

FJA4210 Rev. C1 4
 FJA4210 PNP Epitaxial Silicon Transistor
TRADEMARKS
The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and
is not intended to be an exhaustive list of all such trademarks.
ACEx® Green FPS™ Power247® SuperSOT™-8
Build it Now™ Green FPS™ e-Series™ POWEREDGE® SyncFET™
CorePLUS™ GTO™ Power-SPM™ The Power Franchise®
CROSSVOLT™ i-Lo™ PowerTrench®
CTL™ IntelliMAX™ Programmable Active Droop™
Current Transfer Logic™ ISOPLANAR™ QFET® TinyBoost™
EcoSPARK® MegaBuck™ QS™ TinyBuck™
MICROCOUPLER™ QT Optoelectronics™ TinyLogic®
Fairchild® MicroFET™ Quiet Series™ TINYOPTO™
Fairchild Semiconductor® MicroPak™ RapidConfigure™ TinyPower™
FACT Quiet Series™ MillerDrive™ SMART START™ TinyPWM™
FACT® Motion-SPM™ SPM® TinyWire™
FAST® OPTOLOGIC® STEALTH™ µSerDes™
FastvCore™ OPTOPLANAR® SuperFET™ UHC®
®
FPS™ SuperSOT™-3 UniFET™
FRFET® PDP-SPM™ SuperSOT™-6 VCX™
Global Power ResourceSM Power220®

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF
THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE
UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF
FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE
PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:
1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body, or device or system whose failure to perform can be reasonably
(b) support or sustain life, and (c) whose failure to perform expected to cause the failure of the life support device or
when properly used in accordance with instructions for use system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to result
in significant injury to the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification Product Status Definition
This datasheet contains the design specifications for product development.
Advance Information Formative or In Design
Specifications may change in any manner without notice.
This datasheet contains preliminary data; supplementary data will be pub-
Preliminary First Production lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
This datasheet contains final specifications. Fairchild Semiconductor reserves
No Identification Needed Full Production
the right to make changes at any time without notice to improve design.
This datasheet contains specifications on a product that has been discontin-
Obsolete Not In Production ued by Fairchild semiconductor. The datasheet is printed for reference infor-
mation only.

Rev. I31
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
FJA4210 Rev. C1 5