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Electronics

The document explains the working principles of PN junction diodes under forward and reverse bias conditions, detailing how current flows and the characteristics of each state. It also differentiates between Zener and avalanche breakdown mechanisms, highlighting their doping levels, voltage thresholds, and temperature coefficients. Additionally, it covers operational amplifiers, their ideal characteristics, and parameters such as input offset voltage, slew rate, and common-mode rejection ratio, along with a brief discussion on crystal oscillators and the differences between multiplexers and demultiplexers.

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0% found this document useful (0 votes)
5 views22 pages

Electronics

The document explains the working principles of PN junction diodes under forward and reverse bias conditions, detailing how current flows and the characteristics of each state. It also differentiates between Zener and avalanche breakdown mechanisms, highlighting their doping levels, voltage thresholds, and temperature coefficients. Additionally, it covers operational amplifiers, their ideal characteristics, and parameters such as input offset voltage, slew rate, and common-mode rejection ratio, along with a brief discussion on crystal oscillators and the differences between multiplexers and demultiplexers.

Uploaded by

viralinsaan09
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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2.A.

Explain the working of PN Junction diode with Forward biased


and reversed biased condition .
Answer :-
PN Junction Diode :-
* A PN junction diode is formed by joining a P-type semiconductor
(rich in holes) and an N-type semiconductor (rich in electrons).
* At the junction, electrons from the N-side diffuse into the P-
side, and holes from the P-side diffuse into the N-side.
* This diffusion creates a depletion region, a zone devoid of free
charge carriers, and an electric field across the junction.
* The electric field across this region creates a potential barrier.
. Forward Bias:-
* Connection: The positive terminal of a voltage source is
connected to the P-side, and the negative terminal to the N-side.
* Effect: The applied voltage opposes the built-in potential
barrier.
* Mechanism:
* As the forward voltage increases, the depletion region
narrows.
* When the forward voltage exceeds the barrier potential
(approximately 0.7V for silicon and 0.3V for germanium), the
depletion region collapses.
* Electrons from the N-side are injected into the P-side, and
holes from the P-side are injected into the N-side.
* A significant current flows through the diode.
* Current flow: The current increases exponentially with the
increase in forward voltage.
* Characteristics: In forward bias, the diode acts as a low
resistance path, allowing substantial current flow.

3. Reverse Bias:
* Connection: The positive terminal of a voltage source is
connected to the N-side, and the negative terminal to the P-side.
* Effect: The applied voltage reinforces the built-in potential
barrier.
* Mechanism:
* The applied voltage pulls the holes away from the junction in
the P-side and the electrons away from the junction in the N-side.
* This widens the depletion region, increasing the potential
barrier.
* Only a very small leakage current (reverse saturation current)
flows due to minority carriers.
* Current flow: The current is extremely small and remains
relatively constant with increasing reverse voltage until the
breakdown voltage is reached.
* Characteristics: In reverse bias, the diode acts as a high
resistance path, blocking current flow.
* Breakdown: If the reverse voltage exceeds the breakdown
voltage, a large current flows due to avalanche or Zener
breakdown. This can damage the diode.

2b.Differentiate between Zener avalanche breakdow breakdown


Zener Breakdown:
* Mechanism:
* Zener breakdown occurs due to a strong electric field across
the PN junction. This intense field pulls electrons directly from
the valence band to the conduction band, effectively “tunneling"
them across the narrow depletion region.
* Essentially, the electric field is so strong that it breaks the
covalent bonds holding the atoms together.
* Doping:
* It occurs in heavily doped PN junctions, resulting in a very thin
depletion region.
* Voltage:
* Typically occurs at lower reverse bias voltages.
* Temperature Coefficient:
* Has a negative temperature coefficient, meaning the
breakdown voltage decreases as temperature increases.
* Characteristics:
* Sharp, well-defined breakdown voltage.
Avalanche Breakdown:
* Mechanism:
* Avalanche breakdown happens when minority carriers
(electrons or holes) are accelerated by a strong electric field
within the depletion region.
* These accelerated carriers collide with other atoms, ionizing
them and generating more electron-hole pairs. This creates a
chain reaction, or "avalanche," of charge carriers.
* Doping:
* It occurs in lightly doped PN junctions, where the depletion
region is wider.
* Voltage:
* Typically occurs at higher reverse bias voltages.
* Temperature Coefficient:
* Has a positive temperature coefficient, meaning the
breakdown voltage increases as temperature increases.
* Characteristics:
* The breakdown characteristic is less sharp compared to Zener
breakdown.
Key Distinctions Summarized:
* Doping level: Zener breakdown occurs in heavily doped
junctions, while avalanche breakdown occurs in lightly doped
junctions.
* Depletion region: Zener breakdown has a thin depletion region,
and avalanche breakdown has a wider one.
* Mechanism: Zener breakdown is due to electron tunneling, and
avalanche breakdown is due to impact ionization.
* Voltage: Zener breakdown occurs at lower voltages, and
avalanche breakdown at higher voltages.
* Temperature coefficient: Zener breakdown has a negative
temperature coefficient, and avalanche breakdown has a positive
one.
In essence, Zener breakdown is a direct field effect, while
avalanche breakdown is a collision-induced effect.

3a) Compare common base and common configurations BIT


emitter with reference input gain’t and Current gain.
Answer:-
Common Base (CB) Configuration:
Input: The input signal is applied between the emitter and base,
with the base acting as the common terminal.
Output: The output signal is taken from the collector and base.
Current Gain: The current gain (alpha) is less than unity, meaning
the output current is less than the input current.
Voltage Gain: The CB configuration provides high voltage gain.
Applications: Suitable for impedance matching and RF amplifier
circuits.
Common Emitter (CE) Configuration:
Input: The input signal is applied between the base and emitter,
with the emitter acting as the common terminal.
Output: The output signal is taken from the collector and emitter.
Current Gain: The current gain (beta) is greater than unity,
meaning the output current is greater than the input current.
Voltage Gain: The CE configuration provides both current and
voltage gain, making it suitable for amplification applications.
Applications: Commonly used for amplification applications.

3b) Explain the of MOSFET. Working of enhancement type


Answer :-enhancement-type MOSFET involves grasping how
voltage applied to the gate terminal controls the flow of current
between the source and drain. Here’s a breakdown:
Basic Concepts:
* MOSFET:
* MOSFET stands for Metal-Oxide-Semiconductor Field-Effect
Transistor.
* It’s a voltage-controlled device used for switching or
amplifying electronic signals.
* Enhancement-Type MOSFET:
* In this type, a channel between the source and drain is not
initially present.
* The channel is “enhanced” or created by applying a voltage to
the gate.
Key Components:
* Source (S): The terminal where charge carriers enter the
channel.
* Drain (D): The terminal where charge carriers exit the channel.
* Gate (G): An insulated terminal that controls the channel
formation.
* Substrate (Body): The underlying semiconductor material.
* Oxide Layer (SiO2): An insulating layer between the gate and the
substrate.
Working Principle:
* No Gate Voltage (VGS = 0):
* In an enhancement-type MOSFET, there’s no inherent channel
between the source and drain.
* Therefore, no current flows when the gate voltage (VGS) is zero.
* The device is in the “off” state.
* Applying Gate Voltage (VGS > Threshold Voltage):
* When a positive voltage (for an n-channel MOSFET) is applied
to the gate, an electric field is created.
* This electric field repels holes (in a p-type substrate) and
attracts electrons, forming an “inversion layer” or channel of
electrons beneath the oxide layer.
* The minimum gate voltage required to create this channel is
called the threshold voltage (Vth).
* As Vgs increases past Vth, the strength of the channel
increases, and therefore the amount of current that can flow from
the drain to the source increases.
* Current Flow:
* Once the channel is formed, applying a voltage between the
drain and source (VDS) causes current to flow through the
channel.
* The amount of current flowing is controlled by the gate voltage
(VGS). A higher VGS results in a stronger channel and more
current.
Key Characteristics:
* Normally off: It doesn’t conduct current when VGS = 0.
* Voltage-controlled: The gate voltage controls the channel
conductivity.
* Widely used in digital circuits due to its switching capabilities.
In essence, the enhancement MOSFET “enhances” the
conductivity between the source and drain by creating a channel
when a suitable gate voltage is applied.
4 a )With Neat diagram of Op-Amp block. Diagram, explain its in
an ideal characteristics Op-Amp.
Answer:- An operational amplifier (op-amp) is a high-gain
differential amplifier with two input terminals:
* Inverting input (-): Input signals applied to this terminal produce
an output signal with opposite polarity.
* Non-inverting input (+): Input signals applied to this terminal
produce an output signal with the same polarity.
Block Diagram:

Ideal Characteristics of an Op-Amp:


* Infinite Input Impedance:
* An ideal op-amp draws no current at its input terminals.
* This means that the input impedance is infinitely high,
preventing any loading effect on the signal source.
* Zero Output Impedance:
* An ideal op-amp can deliver any amount of current to the load
without a change in output voltage.
* This implies that the output impedance is zero.
* Infinite Open-Loop Gain (Aol):
* The open-loop gain of an ideal op-amp is infinite.
* This means that even a tiny difference between the input
voltages produces a very large output voltage.
* Infinite Bandwidth:
* An ideal op-amp can amplify signals of any frequency without
any loss in gain.
* Zero Offset Voltage:
* In an ideal op-amp, the output voltage is zero when both input
terminals are grounded.
* Infinite Common-Mode Rejection Ratio (CMRR):
* An ideal op-amp completely rejects any signals that are
common to both input terminals.
These ideal characteristics are not perfectly achievable in real
op-amps, but modern op-amps come very close to these ideals,
making them versatile components in a wide range of electronic
circuits.
Key Points:
* Op-amps are widely used in analog circuits for various
applications like amplification, filtering, and signal conditioning.
* The ideal characteristics of op-amps provide a simplified model
for circuit analysis and design.
* Real op-amps have limitations compared to the ideal model,
but these limitations are often negligible in practical
applications.
By understanding the ideal characteristics and limitations of op-
amps, engineers can effectively design and analyze op-amp
circuits for various applications.

4 B) Explain Following parameters of Op-Amp :-


(a) Input offset Voltage
(b) Input offset current
(c) Slew rate
(d) CMMR
Answer:-
a) Input Offset Voltage (Vio)
* Definition:
* The input offset voltage is the small DC voltage that must be
applied between the input terminals of an op-amp to force the
output voltage to zero.
* Ideally, when both inputs are at the same voltage, the output
should be zero. However, due to imperfections in the op-amp’s
internal circuitry, a small voltage difference is required to achieve
a zero output.
* Significance:
* It introduces DC errors in the output, especially in high-gain
applications.
* Lower input offset voltage is desirable for accurate DC
amplification.
(b) Input Offset Current (Iio)
* Definition:
* The input offset current is the difference between the DC bias
currents flowing into the two input terminals of an op-amp.
* Ideally, these bias currents should be equal, but due to
mismatches in the input transistors, a small difference exists.
* Significance:
* It can cause voltage errors when the input impedance is high.
* Lower input offset current is crucial for applications with high
source impedances.
C Slew Rate (SR) :-
* Definition:
* The slew rate is the maximum rate of change of the output
voltage of an op-amp, expressed in volts per microsecond (V/µs).
* It indicates how quickly the op-amp can respond to a rapid
change in the input signal.
* Significance:
* It limits the op-amp’s ability to accurately reproduce high-
frequency signals.
* If the input signal changes faster than the slew rate, the output
signal will be distorted.
* This is very important in applications that deal with fast
changing signals, like audio amplifiers.
(d) Common-Mode Rejection Ratio (CMRR)
* Definition:
* The common-mode rejection ratio is the op-amp’s ability to
reject signals that are common to both input terminals.
* It’s the ratio of the differential gain (Ad) to the common-mode
gain (Ac), usually expressed in decibels (dB).
* CMRR = Ad/Ac
* Significance:
* It’s essential for rejecting unwanted noise or interference that
appears equally on both inputs.
* A high CMRR is desirable for applications where common-
mode noise is present, such as in instrumentation and
measurement systems.
* This is very important in situations where you want to amplify
a small difference between two large signals, while ignoring the
large signal itself.
5 a) Derive of an an expression for voltage gain amplifier with
negative feedback.
Answer:-
Let’s consider a basic amplifier with negative feedback:
- A: Open-loop gain of the amplifier
- β: Feedback fraction (ratio of feedback voltage to output voltage)
- Vin: Input voltage
- Vout: Output voltage
- Vf: Feedback voltage
The output voltage (Vout) is fed back to the input through the
feedback network, which attenuates the output voltage by a
factor β.
The error voltage (Ve) is the difference between the input voltage
(Vin) and the feedback voltage (Vf):
Ve = Vin – Vf
Vout = A * Ve
Substituting the expression for Ve, we get:
Vout = A * (Vin – Vf)
Since Vf = β * Vout, we can substitute this expression into the
previous equation:
Vout = A * (Vin – β * Vout)
Rearranging the equation to solve for Vout, we get:
Vout = (A / (1 + A * β)) * Vin
Av = Vout / Vin
Substituting the expression for Vout, we get:
Av = (A / (1 + A * β)
This is the expression for the voltage gain of an amplifier with
negative feedback.
5 b) Explain the construction and work working of Crystal
oscillator with proper diagrams.
Answer :- A crystal oscillator uses a piezoelectric crystal,
typically quartz, to generate a stable and precise frequency by
exploiting its natural resonant frequency when a voltage is
applied, acting as a self-contained resonant circuit.
Construction:
Piezoelectric Crystal:
A quartz crystal is the heart of the oscillator, cut and shaped to
vibrate at a specific frequency.
Electrode:
Metal electrodes are placed on the crystal to apply an electrical
signal and sense the resulting vibrations.
Resonant Circuit:
The crystal, along with capacitors and possibly other
components, forms a resonant circuit that sustains oscillations
at the crystal’s natural frequency.
Amplifier/Inverter:
An amplifier or inverter circuit provides the necessary gain and
phase shift to maintain the oscillations.
Feedback Network:
A feedback network, often including capacitors, helps stabilize
the frequency and ensure the crystal continues to oscillate.
Working Principle:
1. Piezoelectric Effect:
When an alternating voltage is applied to the crystal, it vibrates at
its natural frequency due to the piezoelectric effect (the crystal
changes shape under an electric field).
2. Resonance:
The crystal, along with the connected components, forms a
resonant circuit that amplifies the vibrations at the crystal’s
resonant frequency.
3. Amplification and Feedback:
The amplified signal from the crystal is fed back to the input of the
amplifier, maintaining the oscillations at the crystal’s resonant
frequency.
4. Stable Frequency:
The crystal’s natural frequency provides a highly stable and
accurate clock signal.
6a )Differentiate between multiplexer and demultiplexer.
*Multiplexer (MUX):*
1. _Definition:_ A multiplexer is a digital circuit that selects one of
several input signals and forwards the selected signal to a single
output line.
2. _Function:_ Combines multiple input signals into a single
output signal.
3. _Inputs:_ Multiple input lines (e.g., 4, 8, 16).
4. _Outputs:_ Single output line.
5. _Control Signals:_ Select lines (e.g., S0, S1) to choose which
input signal to forward.
*Demultiplexer (DEMUX):*
1. _Definition:_ A demultiplexer is a digital circuit that takes a
single input signal and routes it to one of several output lines.
2. _Function:_ Distributes a single input signal to multiple output
signals.
3. _Inputs:_ Single input line.
4. _Outputs:_ Multiple output lines (e.g., 4, 8, 16).
5. _Control Signals:_ Select lines (e.g., S0, S1) to choose which
output line to route the input signal.
Key differences:
- MUX combines multiple inputs into a single output, while
DEMUX distributes a single input to multiple outputs.
- MUX has multiple input lines and a single output line, while
DEMUX has a single input line and multiple output lines.
In summary, multiplexers are used to combine multiple signals
into a single signal, while demultiplexers are used to distribute a
single signal to multiple signals.
Q6) b) Discuss the structure of the 8085 microprocessor with a
proper block diagram.
Key Components
* Accumulator (A): 8-bit register, primary register for arithmetic
and logical operations.
* ALU (Arithmetic Logic Unit): Performs arithmetic and logical
operations.
* Temporary Registers (B, C, D, E, H, L): General-purpose 8-bit
registers.
* Instruction Decoder and Machine Cycle Encoding: Interprets
instructions and generates control signals.
* Timing and Control Unit: Generates timing signals for control
and synchronization.
* Program Counter (PC): 16-bit register, holds the address of the
next instruction.
* Stack Pointer (SP): 16-bit register, holds the address of the top
of the stack.
* Address Buffer: Drives the higher order address bus (A15-A8).
* Address Latch: Holds the lower order address bus (AD7-AD0)
during the first clock cycle.
* Address/Data Buffer: Bi-directional buffer for address and data.
* Address Bus (A15-A8): Unidirectional, carries the higher order
address.
* Address/Data Bus (AD7-AD0): Bi-directional, carries the lower
order address or data.

7 write short notes


7a) Interrupt :-
* Definition: An interrupt is a signal that temporarily suspends
the current program execution to handle a specific event or
request.
* Purpose: Interrupts allow the processor to respond to real-time
events, external devices, or errors without constantly polling for
them.
* Types: Interrupts can be hardware (generated by external
devices) or software (generated by the program itself).
* Process: When an interrupt occurs, the processor saves the
current state, jumps to an interrupt service routine (ISR) to handle
the event, and then returns to the original program.
7b) Op-Amp as an Integrator :-
* Circuit: An op-amp integrator uses a capacitor in the feedback
loop.
* Function: It produces an output voltage that is proportional to
the integral of the input voltage over time.
* Application: Integrators are used in analog computers, signal
processing, and control systems.
* Formula: The output voltage (Vout) is given by:
* V_{out} = -\frac{1}{RC} \int V_{in} dt
* where R is the resistance, C is the capacitance, and Vin is the
input voltage.
7c) Clamper Circuit:-
* Function: A clamper circuit shifts the DC level of a signal
without altering its shape.
* Components: It typically consists of a capacitor, a diode, and a
resistor.
* Types: Clamping circuits can be positive or negative, depending
on the direction of the diode.
* Application: Clampers are used to restore or shift the DC level
of signals in various electronic systems.
7 d) Microcontroller :-
* Definition: A microcontroller is a small, integrated circuit that
combines a processor core, memory, and programmable
input/output peripherals.
* Purpose: It is designed for embedded systems to control
specific functions in devices.
* Features: Microcontrollers are typically low-power, cost-
effective, and have a wide range of peripherals like timers, ADCs,
and communication interfaces.
* Examples: Common microcontrollers include the Arduino Uno
(based on the ATmega328P), PIC microcontrollers, and ARM
Cortex-M series.
7e) Half-Wave Rectifier :-
* Function: A half-wave rectifier converts AC voltage into
pulsating DC voltage by allowing only one half-cycle of the AC
waveform to pass through.
* Components: It uses a single diode.
* Efficiency: The efficiency of a half-wave rectifier is low (around
40.6%).
* Application: It is used in simple power supplies and signal
processing circuits where high efficiency is not critical.

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