COURSE TITLE: INTRODUCTION TO CMOS PROCESSING
COURSE CODE: EE2520
Textbook: Integrated Circuit Fabrication (Science and
Technology)
Authors: James D Plummer and Peter B. Griffith
Introduction
(Lecture1)
1
KEY CONCLUSIONS
By the end of Introduction Lecture(s), you should be familiarized with
❖ History of Integrated Circuits
❖ Planar Process
❖ Moore’s Law
❖ Dennard Scaling
❖ Technology Node
❖ Unit Processes
❖ Course Objectives
2
1948 - Present
First Solid State Device
First Integrated Circuit
A Complex Chip (i7 processor)
Latest Microprocessor
3
Bulk Vs Planar
Alloy junction technology of
the 1950s.
Grown junction transistor
technology of the 1950s
SiO2
Double diffused transistor The planar process (Hoerni -
technology of the 1950s Fairchild, late 1950s).
4
Planar Process
The Sub Micron Transistor
Basic lithography process
SiO2
Multiple Devices
CMOS Transistors with Metal
Interconnects 5
MOS Vs CMOS
CMOS allows:
• High input impedance.
• 0 DC power dissipation.
• 0 and 1 voltage levels at Gnd and VDD.
• High ION, low IOFF.
• Highly flexible circuit/system design
6
Dennard Scaling
k=2
ITRS - 2003 version
Year of Production 2000 2002 2004 2007 2010 2013 2016 2018
Technology Node (nm) 180 130 90 65 45 32 22 14
MPU Gate Length 100 70 53 35 25 18 13 10
DRAM Bits/Chip (GB) .512 1 4 16 32 64 128 128
MPU Transistors (106) 550 1100 2200 4400 8800 14000
Supply Voltage (V) 1.5-1.8 1.2-1.5 0.9-1.2 0.8-1.1 0.7-1.0 0.6-0.9 0.5-0.8 0.5-0.7
6
Non Ideal Scaling
VG + VD
N+ N+
Inverse slope
6
Beyond Ideal Scaling - Innovations
6
The two limited Regimes
TSMC
Intel