PROFET® BTS 707

Smart Two Channel Highside Power Switch

Features Product Summary
• Overload protection Overvoltage Protection Vbb(AZ) 65 V
• Current limitation Vbb(on) 5.8 ... 58 V
Operating voltage
• Short-circuit protection
• Thermal shutdown
active channels: one two parallel
• Overvoltage protection On-state resistance RON 250 125 mΩ
• Fast demagnetization of inductive loads Nominal load current IL(NOM) 1.9 2.8 A
• Reverse battery protection1)

• Open drain diagnostic output

• Open load detection in OFF-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection

Application
• µC compatible power switch with diagnostic feedback
for 12 V and 24 V DC grounded loads
• Most suitable for inductive loads
• Replaces electromechanical relays, fuses and discrete circuits

General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection
functions.

Pin Definitions and Functions

Pin Symbol Function

1,10, Vbb Positive power supply voltage. Design the Pin configuration (top view)
11,12, wiring for the simultaneous max. short circuit
15,16, currents from channel 1 to 2 and also for low Vbb 1 • 20 Vbb
19,20 thermal resistance GND1 2 19 Vbb
3 IN1 Input 1,2, activates channel 1,2 in case of IN1 3 18 OUT1
7 IN2 logic high signal ST1 4 17 OUT1
17,18 OUT1 Output 1,2, protected high-side power output N.C. 5 16 Vbb
13,14 OUT2 of channel 1,2. Design the wiring for the max. GND2 6 15 Vbb
short circuit current IN2 7 14 OUT2
4 ST1 Diagnostic feedback 1,2 of channel 1,2, ST2 8 13 OUT2
8 ST2 open drain, low in on state on failure or high in N.C. 9 12 Vbb
off state on failure Vbb 10 11 Vbb
2 GND1 Ground 1 of chip 1 (channel 1)
6 GND2 Ground 2 of chip 2 (channel 2)
5,9 N.C. Not Connected

1) With external current limit (e.g. resistor RGND=150 Ω) in GND connection, resistor in series with ST
connection, reverse load current limited by connected load.
Semiconductor Group 1 08.96
 BTS 707
Block diagram

+ Vbb
Leadframe
Voltage Overvoltage Current Gate
source protection limit protection

VLogic
OUT1 17,18
Voltage Charge pump Limit for
unclamped
sensor Level shifter Temperature
ind. loads
Rectifier sensor
3 IN1
Open load
Load
ESD Logic detection
4 ST1

Short circuit
1 GND1
detection
Chip 1
Signal-
Load GND
GND
Chip 1
+ Vbb Leadframe

OUT2 13,14

Logic and protection circuit of chip 2

(equivalent to chip 1)
7 IN2

Load
8 ST2

6 GND2

Chip 2 
Signal- PROFET Load GND
GND
Chip 2 Leadframe connected to pin 1, 10, 11, 12, 15, 16, 19, 20

Maximum Ratings at Tj = 25°C unless otherwise specified

Parameter Symbol Values Unit

Supply voltage (overvoltage protection see page 4) Vbb 65 V
Supply voltage for full short circuit protection Vbb 40 V
Tj,start = -40 ...+150°C
Load current (Short-circuit current, see page 5) IL self-limited A
Operating temperature range Tj -40 ...+150 °C
Storage temperature range Tstg -55 ...+150

Semiconductor Group 2
 BTS 707

Maximum Ratings at Tj = 25°C unless otherwise specified

Parameter Symbol Values Unit

Power dissipation (DC)2) Ta = 25°C: Ptot 3 W

(all channels active) Ta = 85°C: 1.6
Electrostatic discharge capability (ESD) IN, ST: VESD 1.0 kV
(Human Body Model) all other pins: tbd (>1.0)
Input voltage (DC) VIN -0.5 ... +36 V
Current through input pin (DC) IIN ±2.0 mA
Current through status pin (DC) IST ±5.0
see internal circuit diagram page 7

Thermal Characteristics
Parameter and Conditions Symbol Values Unit
min typ max
Thermal resistance
junction - soldering point2),3) each channel: Rthjs -- -- 18 K/W
junction - ambient 2) one channel active: Rthja -- 45 --
all channels active: -- 37 --

Electrical Characteristics
Parameter and Conditions, each of the two channels Symbol Values Unit
at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max

Load Switching Capabilities and Characteristics

On-state resistance (Vbb to OUT)
IL = 2 A each channel, Tj = 25°C: RON -- 225 250 mΩ
Vbb = 24 V Tj = 150°C: 400 500

two parallel channels, Tj = 25°C: 113 125

Nominal load current one channel active: IL(NOM) 1.60 1.9 -- A
two parallel channels active: 2.4 2.8
Device on PCB2), Ta = 85°C, Tj ≤ 150°C
Output current while GND disconnected or pulled IL(GNDhigh) -- -- 1.1 mA
up; Vbb = 32 V, VIN = 0, see diagram page 8

2) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air. See page 12
3) Soldering point: upper side of solder edge of device pin 15. See page 12

Semiconductor Group 3
 BTS 707

Parameter and Conditions, each of the two channels Symbol Values Unit
at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max

Turn-on time to 90% VOUT: ton 15 -- 80 µs

Turn-off time to 10% VOUT: toff 20 -- 70
RL = 12 Ω, Vbb = 20 V, Tj =-40...+150°C
Slew rate on dV/dton -- -- 6 V/µs
10 to 30% VOUT, RL = 12 Ω, Vbb = 20 V,
Tj =-40...+150°C:
Slew rate off -dV/dtoff -- -- 7 V/µs
70 to 40% VOUT, RL = 12 Ω, Vbb = 20 V,
Tj =-40...+150°C:

Operating Parameters
Operating voltage4) Tj =-40...+150°C: Vbb(on) 5.8 -- 58 V
Undervoltage shutdown Tj =-40...+150°C: Vbb(under) 2.7 -- 4.7 V
Undervoltage restart Tj =-40...+150°C: Vbb(u rst) -- -- 4.9 V
Undervoltage restart of charge pump Vbb(ucp) -- 5.6 7.5 V
see diagram page 11 Tj =-40...+150°C:
Undervoltage hysteresis ∆Vbb(under) -- 0.4 -- V
∆Vbb(under) = Vbb(u rst) - Vbb(under)
Overvoltage protection5) Tj =-40...+150°C: Vbb(AZ) 65 70 -- V
I bb = 40 mA
Standby current, all channels off Ibb(off) -- 20 70 µA
VIN = 0 Tj =150°C: --
Operating current 6), VIN = 5V, Tj =-40...+150°C
IGND = IGND1 + IGND2, one channel on: IGND -- 2.2 -- mA
two channels on: -- 4.4 --

Protection Functions
Initial peak short circuit current limit, (see timing
diagrams, page 9)
each channel, Tj =-40°C: IL(SCp) -- -- 19 A
Tj =25°C: -- 10 --
Tj =+150°C: 4.0 -- --
two parallel channels twice the current of one channel
Output clamp (inductive load switch off)7) VON(CL) 59 -- 75 V
at VON(CL) = Vbb - VOUT
Thermal overload trip temperature Tjt 150 -- -- °C
Thermal hysteresis ∆Tjt -- 10 -- K

4) At supply voltage increase up to Vbb = 5.6 V typ without charge pump, VOUT ≈Vbb - 2 V
5) see also VON(CL) in circuit diagram on page 7.
6) Add IST, if IST > 0
7) If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest
VON(CL)

Semiconductor Group 4
 BTS 707

Parameter and Conditions, each of the two channels Symbol Values Unit
at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max

Reverse Battery
Reverse battery voltage 8) -Vbb -- -- 32 V

Diagnostic Characteristics
Open load detection current IL(off) -- 6 -- µA
Open load detection voltage Tj =-40..+150°C: VOUT(OL) 2.4 3 4 V
Short circuit detection voltage V
(pin 3 to 5) VON(SC) -- 2.5 --

Input and Status Feedback9)

Input resistance RI -- 20 -- kΩ
(see circuit page 7)
Input turn-on threshold voltage VIN(T+) 1 -- 2.5 V
Input turn-off threshold voltage VIN(T-) 0.8 -- -- V
Input threshold hysteresis ∆ VIN(T) -- 0.5 -- V
Off state input current VIN = 0.4 V: IIN(off) 1 -- 30 µA
On state input current VIN = 2.5 V: IIN(on) 10 25 70 µA
Delay time for status with open load td(ST OL3) -- 200 -- µs
(see timing diagrams, page 10)
Status output (open drain)
Zener limit voltage Tj =-40...+150°C, IST = +1.6 mA: VST(high) 5.4 6.1 -- V
ST low voltage Tj =-40...+150°C, IST = +1.6 mA: VST(low) -- -- 0.4

8) Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 3 and circuit page 7).
9) If ground resistors RGND are used, add the voltage drop across these resistors.

Semiconductor Group 5
 BTS 707

Truth Table
Channel 1 Input 1 Output 1 Status 1
Channel 2 Input 2 Output 2 Status 2
level level BTS 707
Normal L L L
operation H H H
Open load L Z H
H H H
Short circuit L L L
to GND H L L
Short circuit L H H
to Vbb H H H
Overtem- L L L
perature H L L
Under- L L L
voltage H L L
Overvoltage no overvoltage shutdown,
see normal operation

Parallel switching of channel 1 and 2 is easily possible by connecting the inputs and outputs in parallel. The
status outputs ST1 and ST2 have to be configured as a 'Wired OR' function with a single pull-up resistor.

Terms
Ibb
V Leadframe Leadframe
bb I IN1 I IN2
Vbb Vbb
IN1 IN2
3 I L1 VON1 7 I L2 VON2
PROFET OUT1 PROFET OUT2
I ST1 17,18 I ST2 13,14
Chip 1 Chip 2
ST1 ST2
4 8
V V
IN1 VST1 GND1
IN2
V ST2 GND2
2 6
IGND1 VOUT1 I VOUT2
GND2
R R
GND1 GND2

Leadframe (Vbb) is connected to pin 1,10,11,12,15,16,19,20

External RGND optional; two resistors RGND1, RGND2 = 150 Ω or a single resistor RGND = 75 Ω for reverse
battery protection up to the max. operating voltage.

Semiconductor Group 6
 BTS 707
Input circuit (ESD protection), IN1 or IN2 Inductive and overvoltage output clamp,
OUT1 or OUT2
R
I +Vbb
IN

VZ
ESD-ZD I
I
I
V ON
GND
OUT

ESD zener diodes are not to be used as voltage clamp at

DC conditions. Operation in this mode may result in a drift of PROFET
the zener voltage (increase of up to 1 V).

Power GND
Status output, ST1 or ST2
VON clamped to VON(CL) = -- V typ.
+5V
Overvoltage protection of logic part
GND1 or GND2
R ST(ON)
ST
+ V bb

ESD-
V
ZD Z2
GND RI
IN

ESD-Zener diode: 6.1 V typ., max 5.0 mA; RST(ON) < 0 Ω at Logic

1.6 mA, ESD zener diodes are not to be used as voltage R ST

ST
clamp at DC conditions. Operation in this mode may resul t in
V
a drift of the zener voltage (increase of up to 1 V). Z1 PROFET
GND

Short Circuit detection R GND

Fault Signal at ST-Pin: VON > 2.5 V typ, no switch off by Signal GND
the PROFET itself, external switch off recommended!
VZ1 = 6.1 V typ., VZ2 = 70 V typ., RI = 20 kΩ typ.,
+ V bb RGND = 150 Ω, RST = 15 kΩ nominal.

V
Open-load detection, OUT1 or OUT2
ON
OFF-state diagnostic condition:
OUT VOUT > 3 V typ.; IN low
Logic Short circuit
unit detection

OFF
I V
L(OL) OUT

Logic Open load

unit detection

Signal GND

Semiconductor Group 7
 BTS 707
GND disconnect Inductive load switch-off energy
dissipation
E bb

E AS
Vbb
IN ELoad
Vbb
OUT IN
PROFET

ST PROFET OUT
GND = L
ST EL
V
bb
V
IN
V
ST V
GND
GND
ZL
{ ER
R
L
Any kind of load. In case of IN = high is VOUT ≈ VIN - VIN(T+).
Due to VGND > 0, no VST = low signal available. Energy stored in load inductance:
2
GND disconnect with GND pull up EL = 1/2·L·I L
While demagnetizing load inductance, the energy
dissipated in PROFET is
EAS= Ebb + EL - ER= ∫ VON(CL)·iL(t) dt,
Vbb
IN

PROFET OUT with an approximate solution for RL > 0 Ω:

ST IL· L IL·RL
EAS= (V + |VOUT(CL)|)
2·RL bb
ln (1+ |V )
GND OUT(CL)|

V V V
V IN ST GND
bb

Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND > 0, no VST = low signal available.

Vbb disconnect with energized inductive

load

high Vbb
IN

PROFET OUT

ST
GND

V
bb

For an inductive load current up to the limit defined by EAS

(max. ratings ) each switch is protected against loss of Vbb.
Consider at your PCB layout that in the case of Vbb dis-
connection with energized inductive load the whole load
current flows through the GND connection.

Semiconductor Group 8
 BTS 707
Timing diagrams
Both channels are symmetric and consequently the diagrams are valid for channel 1 and
channel 2

Figure 1a: Vbb turn on, : Figure 3a: Short circuit:

shut down by overtempertature, reset by cooling

IN IN

t d(bb IN)
V V OUT
bb

normal
Output short to GND
operation
V
OUT
I I
L L(SCp)
I
A L(SCr)

ST open drain

ST
t
A
t
in case of too early VIN=high the device may not turn on (curve A)
td(bb IN) approx. 150 µs Heating up requires several milliseconds, depending on external
conditions. External shutdown in response to status fault signal
Figure 2a: Switching an inductive load recommended.

IN

ST

V
OUT

I
L

Semiconductor Group 9
 BTS 707
Figure 4a: Overtemperature: Figure 5b: Open load, : detection in OFF-state, open
Reset if Tj <Tjt load occurs in off-state

IN IN

ST ST

V V
OUT OUT

VOUT(OL)

T I
J L normal open normal

t *) *) t

*) IL = 6 µA typ

Figure 5a: Open load, : detection in OFF-state, turn

on/off to open load
Figure 6a: Undervoltage:

IN
IN

t
d(ST OL3) V bb
ST

V Vbb(u cp)
bb(under)
Vbb(u rst)
V
OUT

V OUT

I
L open normal
ST open drain
*) t
t
td(ST,OL3) depends on external circuitry because of high
impedance
*) IL = 6 µA typ

Semiconductor Group 10
 BTS 707
Figure 6b: Undervoltage restart of charge pump

V on
off-state

on-state

V bb(u

V
bb(u cp)
V bb(under)
Vbb

charge pump starts at Vbb(ucp) =5.6 V typ.

Figure 7a: Overvoltage, no shutdown:

IN

Vbb VON(CL)

V
OUT

VOUT(OL)

ST

Semiconductor Group 11
 BTS 707
Package and Ordering Code
Standard P-DSO-20-9 Ordering Code
BTS 707 Q67060-S7010-A2

All dimensions in millimetres

1) Does not include plastic or metal protrusions of 0.15 max per side
2) Does not include dambar protrusion of 0.05 max per side

Definition of soldering point with temperature Ts:

upper side of solder edge of device pin 15.

Pin 15

Printed circuit board (FR4, 1.5mm thick, one layer

70µm, 6cm2 active heatsink area) as a reference for
max. power dissipation Ptot, nominal load current
IL(NOM) and thermal resistance Rthja

Semiconductor Group 12