1. Calculate the threshold voltage of a 6.

The circuit has a total resistance of

silicon diode at a temperature of 0°C 473,332 ohms and draws 4.4 mA. The
if at 25°C. It has a threshold voltage best expression for the voltage of the
of source is?
A. A. 0.72 V A. 2082V
B. 0.74 V B. 110kV
C. 0.76 C. 2.1kV
D. 0.77 D. 2.08266kV

2. If 27 J of energy is expended in 7. You have an unlimited supply of 1-w,

moving 3 C of charge between two 100-Ω resistors. You need to get a
points, what is the electric potential 100-Ω, 10-W resistor. This can be
difference between these two points? done most cheaply by means of a
A. 6 V series-parallel matrix of
B. 9V A. 3 X 3 resistors.
C. 8 V B. 4 X 3 resistors.
D. 12 V C. 4 X 4 resistors.
D. 2 X 5 resistors.
3. A 4-band resistor has the following
colors: blue, red, gold, gold. What is 8. Four resistors are connected in series,
its value and tolerance? across a 6.0-V battery. The values are
A. 0.62 Ω ± 5% R1- 10 Ω, R2 = 20 Ω, R3 = 50 2, and
B. 6.2 Ω ± 5% R4 = 100 Ω. Τ. voltage across R2 is:
C. 62 Ω±5% A. 0.18 V.
D. 62 Ω ± 10% B. 33 mV
C. 5.6 mV.
4. If a short circuit is placed across the D. 670 mV
leads of a resistor, the current in the
resistor itself would be 9. How much total energy is converted
A. zero by a 1-horsepower motor in 1)
B. the same as normal A. 7.46 kWh
C. excessively high B. 8.32 kWh
D. much higher than normal C. 8.59 kWh
D. 9.32 kwn
5. Suppose you double the voltage in a
simple circuit & cut the resistance in 10. A heater with a resistance of 8 ohm is
half. The current will become connected across the 120-V line. How
A. Four times as great. much current does it draw?
B. The same as it was before. A. 15A
C. Twice as great. B. 15mA
D. Half as great. C. 1.5 A
D. 150 mA
11. A potentiometer is a 17. If the collector resistor decreases to
A. three-terminal devices used to zero in a base-biased circuit, the load
vary the voltage in a circuit line will become
B. two-terminal devices used to vary A. Horizontal
the current in a circuit B. Vertical
C. fixed resistor C. Useless
D. two terminal device used to vary D. Flat
voltage in a circuit
18. the emitter i resistance decreases, and
12. How much is the voltage across an the
open component in a series circuit? A. Q point moves up
A. The full applied voltage, VT B. collector current decreases
B. The voltage is slightly higher than C. Q point stays where it is
normal D. current gain increases
C. 0V
D. it cannot be determined 19. the disadvantage of base bias is that
A. it is a very complex
13. A voltage of 120 V is applied across B. it produces low gain
two resistors, R1 and R2, in series. If C. It is too beta-dependent
the voltage across R2 equals 90 V, D. it produces high leakage current
how much is the voltage across R1?
A. 90 V 20. In a voltage divider bias, or pup
B. 30 V transistor, there is no base current but
C. 120 V the base voltage is approximately
D. Cannot be determined correct. The most likely problem(s)
is/are
14. If a resistor in a series circuit is A. the bias resistor is open
shorted, the series current, I B. the collector resistor is open
A. decreases C. the base-emitter junction open
B. stays the same D. answers B and C
C. increases
D. drops to zero 21. A certain common-emitter amplifier
has a voltage gain of 100. If the
15. A swamping resistor in a common- emitter bypass capacitor is removed
emitter amplifier. A. the circuit will become unstable
A. Stabilized the voltage gain B. the voltage gain will decrease
B. Increases the voltage gain C. the voltage gain will increase
C. Reduces distortion D. the Q-point will shift
D. Both a and c
22. A CE amplifier is driving 10kΩ load.
16. The input signal to a transistor If RC = 2.2kΩ and re=10, the voltage
amplifier results in saturation during gain is approximately
part of the cycle. This produces: A. 220
A. The greatest possible B. 1000
amplification. C. 10
B. Reduced efficiency. D. 1
C. Avalanche effect.
D. Nonlinear output impedance.
23. Each stage of a four stage amplifier 28. Which of the following transistor
has a voltage gain of 15. The overall amplifiers has the lowest output
voltage gain is? impedance?
A. 60 A. The common-collector amplifier
B. 15 B. The common-base amplifier
C. 50,625 C. The common-emitter amplifier
D. 3,078 D. None of these

24. For normal operation of a pnp BJT, 29. A JFET parameter that describes how
the base must be __ with respect to effective the gate-source voltage is in
the emitter and __ with respect to the controlling the drain current is called
collector. its
A. positive, negative A. Gamma, y
B. positive, positive B. Transconductance, gm
C. negative, positive C. Beta, ẞ
D. negative, negative D. None of these

25. Which among the following is not 30. The value of drain to source voltage,
considered a semiconductor Vos at which the drain current, ID,
A. boron levels off is called the
B. germanium A. Cut-off voltage, VGs(off)
C. antimony B. Pinch-off voltage, Vr
D. carbon C. Breakdown voltage, VBR
D. threshold voltage, Vos(th)
26. A disadvantage of gallium-arsenide
devices is that 31. When a JFET is operating in the
A. The charge carriers move fast ohmic region,
B. The material does not react to A. Io is independent of VDs
ionizing radiation. B. lo is independent of Vas
C. It is expensive to produce. C. lo increases in direct proportion
D. It must be used at high to VDS
frequencies. D. drain acts like a current source

27. Holes flow the opposite way from 32. For an enhancement-type MOSFET,
electrons because the threshold voltage Vos(th), is the
A. Charge carriers flow A. Maximum allowable gate-source
continuously. voltage before breakdown
B. Charge carriers are passed B. Gate-source voltage that produces
from atom to atom. a leveling off of Id
C. They have the same polarity. C. Minimum gate-source voltage
D. No! Holes flow in the same that makes drain current flow
direction as electrons. D. None of the above
33. For a properly biased pnp transistor, 39. In a normally biased npn transistor,
let Ic = 10 mA and IE = 10.2 mA. the electrons in the emitter have
What is the level of IB? enough energy to overcome the
A. 0.2 A barrier potential of the
B. 200 mA A. Base-emitter junction
C. 200 μΑ B. Base-collector junction
D. 0.2 μΑ C. Collector-base junction
D. Recombination path
34. FET can be used as an amplifier in
which region of operation? 40. When a free electron recombines with
A. linear or active a hole in the base region, the free
B. ohmic electron becomes
C. saturation A. Another free electron
D. cut-off B. A valence electron
C. A conduction-band electron
35. A p-channel D-MOSFET has Ipss = 6 D. A majority carrier
mA and Vp = 6 V. What is a. drain
current when VGs = 1 V? 41. What is the most important fact about
A. 8.167 mA the collector current?
B. 4.167 mA A. It is measured in milliamperes.
C. 6.167 mA B. It equals the base current divided
D. 0.616 mA by the current gain.
C. It is small.
36. For a given n-channel JFET, Idss: D. It approximately equals the
12mA and Vp = 6V, calculate Vgs at emitter current.
ID=4mA.
A. 2.54 V 42. When testing an npn transistor using
B. -2.54 V an ohmmeter, the collector- emitter
C. 5.24 V resistance will be low when
D. - 5.24 V A. the collector is positive with
respect to the emitter
37. The bandwidth of the amplifier is B. the emitter is positive with respect
determined by to the collector
A. The gain-bandwidth product C. the transistor is normal
B. The midrange gain D. the transistor is defective
C. The roll-off rate
D. The critical frequencies 43. The major advantage of a
phototransistor as compared to a
38. Which of the following factors has the photodiode is its
greatest effect on the hybrid A. response to higher frequencies
parameters of a transistor amplifier? B. AC operation
A. collector current C. increased sensitivity
B. temperature D. durability
C. collector voltage
D. beta
44. The current gain of a pnp transistor is 49. Due to the nonlinearity of a diode, ha
A. The negative of the npn current ring the ability to create harmonics in
gain the output signal, it is used as a/n
B. The collector current divided by A. RF switch
the emitter current B. Envelope detector
C. Near zero C. Frequency multiplier
D. The ratio of collector current to D. Oscillator
base current
50. If the load resistance decreases in a
45. For typical operation, you need to use zener regulator, the zener current
reverse bias with A. decreases
A. zener diode B. stays the same
B. photodiode C. increases
C. varactor diode D. Equal the source voltage divided
D. all of the above by the series resistance

46. A 12-V zener diode has & 1-W power 51. In an inverting amplifier, Ri = 1 ΚΩ,
rating. What is the maximum rated Rf = 01 Mohm and Vi = 0.6 V. If the
zener current? op amp has an input bias current of 80
A. 120 mA nA, the output offset voltage is
B. 83.3 mA A. 79.2 V
C. 46.1 mA B. 8 uV
D. 1A C. 8 mV
D. 80.2 nV
47. The reverse saturation current of a
diode at 20deg is 10nA. What will be 52. An ideal current amplifier
the value of the reverse saturation A. Has an infinite input impedance
current at 100 deg? B. Has an infinite output impedance
A. 2.56uA C. Uses voltage sampling
B. 2.75uA D. Uses series mixing
C. 2.43uA
D. 2.63uA 53. What is the effect of the very large
value of the loop gain in. feedback
48. It is a special-purpose diode that has amplifier?
no pn junction and is characterized by A. The gain is reduced
a very low junction capacitance B. The bandwidth is enhanced
making it ideal for high-speed C. The gain is stabilized
applications. D. All of the above
A. PIN diode
B. Tunnel diode 54. How does negative feedback stabilize
C. Hot carrier diode the gain of a feedback amplifier?
D. Step-recovery diode A. It reduces the distortion-
B. By increasing the bandwidth-
C. By eliminating the effect of the
open-loop gain
D. All of the above
55. A CS amplifier has a load resistance 61. According to Moore's Law, the
of 10 kohm and Rp = 820 Ω. If number of transistors in a chip
gm=5mS and Vin = 500 mV, the out doubles after every approximately.
signal voltage is Months
A. 1.89 V A. 12
B. 2.05 V B. 16
C. 25V C. 18
D. 0.5 V D. 24

56. Which of the following describe(s) 62. Which is not a linear IC?
the difference(s) between JFETs and A. logic gate
depletion-type MOSFETs? B. op amp
A. VGS can be positive or negative C. comparator
for the depletion-type. D. voltage regulator
B. ID can exceed IDSS for the
depletion-type. 63. The process used to transfer the
C. The depletion-type can operate in circuit layout in the photomask into
the enhancement mode. the wafer substrate.
D. All of the above A. diffusion
B. photolithography
57. 2 most prevalent IC technologies are C. ion implantation
A. BJT and FET D. etching
B. Bipolar and MOS
C. JFETS and MOSFETS 64. Which among the processes is done
D. NMOS and PMOS the latest?
A. chemical vapor deposition
58. The most commonly used method of B. ion implantation
growing silicon crystals for the C. photolithography
manufacture of ICs is developed by D. metallization
A. Czochralsko
B. Kilby 65. What transistor is used in this
C. Noyce amplifier?
D. Moore A. N-channel D-MOSFET
B. P-channel D-MOSFET
59. The most likely thickness of a 150- C. N-channel E-MOSFET
mm wafer is D. P-channel E-MOSFET
A. 0.3 mm
B. 0.6mm 66. The effects of noise can be reduced by
C. 0.8 mm A. lowering the supply voltage
D. 1.0 mm B. using positive feedback
C. using negative feedback
60. It is the process by which films of D. using hysteresis
various materials can be laid out on E. answers (a) and (d)
the silicon wafer
A. implantation
B. doping
C. diffusion
D. deposition
67. Instrumentation amplifiers are used
primarily in
A. high-noise environments
B. medical equipment
C. test instruments
D. filter circuits

68.