Pb Free Plating Product
ISSUED DATE :2006/07/19
REVISED DATE :2006/11/09B
GTT8205S BVDSS
RDS(ON)
20V
28m
N-CHANNEL ENHANCEMENT MODE POWER MOSFET ID 6A
Description
The GTT8205S provide the designer with best combination of fast switching, low on-resistance and
cost-effectiveness.
The TSSOP-6 package is universally used for all commercial-industrial surface mount applications.
Features
* Low on-resistance
*Capable of 2.5V gate drive
*Low drive current
Package Dimensions
Millimeter Millimeter
REF. REF.
Min. Max. Min. Max.
A 1.10 MAX. L 0.45 REF.
A1 0 0.10 L1 0.60 REF.
A2 0.70 1.00 0° 10°
c 0.12 REF. b 0.30 0.50
D 2.70 3.10 e 0.95 REF.
E 2.60 3.00 e1 1.90 REF.
E1 1.40 1.80
Absolute Maximum Ratings
Parameter Symbol Ratings Unit
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS ±8 V
3
Continuous Drain Current , VGS@4.5V ID @TA=25 6 A
3
Continuous Drain Current , VGS@4.5V ID @TA=70 4.8 A
1
Pulsed Drain Current IDM 20 A
Total Power Dissipation PD @TA=25 1.14 W
Linear Derating Factor 0.01 W/
Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150
Thermal Data
Parameter Symbol Value Unit
3
Thermal Resistance Junction-ambient Max. Rthj-a 110 /W
GTT8205S Page: 1/4
ISSUED DATE :2006/07/19
REVISED DATE :2006/11/09B
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter Symbol Min. Typ. Max. Unit Test Conditions
Drain-Source Breakdown Voltage BVDSS 20 - - V VGS=0, ID=250uA
Breakdown Voltage Temperature Coefficient BVDSS / Tj - 0.03 - V/ Reference to 25 , ID=1mA
Gate Threshold Voltage VGS(th) 0.5 - 1.5 V VDS=VGS, ID=250uA
Forward Transconductance gfs - 20 - S VDS=10V, ID=6A
Gate-Source Leakage Current IGSS - - ±100 nA VGS= ±8V
Drain-Source Leakage Current(Tj=25 ) - - 1 uA VDS=20V, VGS=0
IDSS
Drain-Source Leakage Current(Tj=70 ) - - 25 uA VDS=16V, VGS=0
- - 28 VGS=4.5V, ID=6.0A
Static Drain-Source On-Resistance2 RDS(ON) m
- - 38 VGS=2.5V, ID=5.2A
Total Gate Charge2 Qg - 23 -
ID=6A
Gate-Source Charge Qgs - 4.5 - nC VDS=20V
VGS=5V
Gate-Drain (“Miller”) Change Qgd - 7 -
Turn-on Delay Time2 Td(on) - 30 - VDS=10V
Rise Time Tr - 70 - ID=1A
ns VGS=5V
Turn-off Delay Time Td(off) - 40 - RG=6
Fall Time Tf - 65 - RD=10
Input Capacitance Ciss - 1035 -
VGS=0V
Output Capacitance Coss - 320 - pF VDS=20V
f=1.0MHz
Reverse Transfer Capacitance Crss - 150 -
Source-Drain Diode
Parameter Symbol Min. Typ. Max. Unit Test Conditions
2
Forward On Voltage VSD - - 1.2 V IS=1.7A, VGS=0V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board, t 5sec; 180 /W when mounted on Min. copper pad.
GTT8205S Page: 2/4
ISSUED DATE :2006/07/19
REVISED DATE :2006/11/09B
Characteristics Curve
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. RDSON v.s. Junction Temperature Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
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ISSUED DATE :2006/07/19
REVISED DATE :2006/11/09B
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
180 /W
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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