Name : Omkar Borkar
MIS : 612302011
EXPERIMENT NO 2
Aim: Drain and Transfer Characteristics of MOSFET
Apparatus: PROTEUS SIMULATION SOFTWARE
Circuit Diagram:
Drain and Transfer Characteristics Simulation Graph:
Inferences from the graph:
Triode Region: At low Vds values, the drain current (Id) increases almost
linearly with Vds, indicating that the MOSFET behaves like a resistor.
(Vds<Vgs-Vth)
Saturation Region: As Vds increases, Id reaches a near-constant value
for each gate voltage (Vgs). This is where the MOSFET operates as a
current source. (Vds>=Vgs-Vth)
Cutoff Region: When Vgs is below the threshold voltage (Vth), Id is
negligible. (Vgs<=Vth).
Excel Table for transfer characteristics
V(DS) I(D) I(D) I(D) I(D) I(D)
(V) [V(GS)=1.00] [V(GS)=3.00 [V(GS)=5.00] [V(GS)=7.00] [V(GS)=9.00]
(µA) ] (µA) (µA) (µA) (µA)
0.1 0.0251 0.0251 263.207 380.184 427.445
1.1 0.275 0.275 1968.78 3842.1 4532.46
2.1 0.525 0.525 2090.45 6468.89 8243.33
3.1 0.775 0.775 2097.42 7883 11395.9
4.1 1.03 1.03 2104.36 8036.49 13766.6
5.1 1.28 1.28 2111.28 8055.53 15089.5
Excel Table for Drain characteristics
I(D) I(D) I(D) I(D) I(D)
V(GS)
[V(DS)=1.00] [V(DS)=3.00] [V(DS)=5.00] [V(DS)=7.00] [V(DS)=9.00]
(V)
(µA) (µA) (µA) (µA) (µA)
0.1 0.25 0.75 1.25 1.75 2.25
1 0.25 0.75 1.25 1.75 2.25
2.1 0.25 0.75 1.25 1.75 2.25
3.9 135867 137179 138487 139791 141091
4 235265 237434 239594 241745 243888
4.1 355694 358836 361963 365076 368174
5.1 2026900 2340710 2355830 2370820 2385690
6.1 3017690 5126890 5154440 5181720 5208730
Comparison of BJT and MOSFET
Parameter BJT MOSFET
Type Current-controlled Voltage controlled
device device
Operation Carriers Uses both electrons Uses only one type
and holes (bipolar) (electrons or holes,
unipolar)
Power Consumption Higher (continuous
base current required)
Efficiency lower Higher
Voltage and Current high moderate
Gain
Application Amplifiers, Switching Digital circuits, power
electronics,
microcontrollers
Conclusion: - In modern electronics, MOSFETs are preferred in most
applications, especially in digital and power electronics, due to their
efficiency, fast switching, and ease of integration in ICs. However, BJTs
are still widely used in analog and low-noise applications, such as audio
amplifiers and RF circuits.
Switching Characteristics
Objective: To analyze the switching characteristics (turn-on, turn-off, and delay
times) of an IRF510 MOSFET using an oscilloscope
Theory:
MOSFET Basics: Explain how an IRF510 works as a switch (ON when
V_GS > threshold voltage, OFF when V_GS < threshold voltage).
Switching Characteristics:
o Turn-On Time (t_on): Time taken to switch from OFF to ON.
o Turn-Off Time (t_off): Time taken to switch from ON to OFF.
o Rise Time (t_r): Time for drain current to rise to its maximum.
o Fall Time (t_f): Time for drain current to drop to zero.
Why It’s Important: These characteristics determine how fast a MOSFET
can operate in high-frequency switching applications.
Turn On Time: 10.5 ms
Turn Off Time: 87 ms
Rise Time: 7.5 ms
Fall Time: 7.5 ms
