VS-MB High Voltage Series

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Vishay Semiconductors
Single Phase Bridge Rectifier, 25 A, 35 A
FEATURES
• Universal, 3 way terminals:
push-on, wrap around or solder
• High thermal conductivity package, electrically
insulated case
• Center hole fixing
• Excellent power/volume ratio
• Nickel plated terminals solderable using lead (Pb)-free
solder; solder alloy Sn/Ag/Cu (SAC305); solder
temperature 260 °C to 275 °C
D-34 • UL E300359 approved
• Designed and qualified for industrial and consumer level
• Material categorization: for definitions of compliance
PRIMARY CHARACTERISTICS please see www.vishay.com/doc?99912
IO 25 A, 35 A
DESCRIPTION
VRRM 1400 V to 1600 V
A range of extremely compact, encapsulated single phase
Package D-34
bridge rectifiers offering efficient and reliable operation.
Circuit configuration Single phase bridge They are intended for use in general purpose and
instrumentation applications.

MAJOR RATINGS AND CHARACTERISTICS

VALUES VALUES
SYMBOL CHARACTERISTICS UNITS
26MB..A 36MB..A
25 35 A
IO
TC 70 55 °C
50 Hz 400 475
IFSM A
60 Hz 420 500
50 Hz 790 1130
I2t A2s
60 Hz 725 1030
VRRM Range 1400 to 1600 V
TJ -55 to +150 °C


ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS
VRRM, MAXIMUM REPETITIVE VRSM, MAXIMUM NON-REPETITIVE IRRM MAXIMUM
TYPE VOLTAGE
PEAK REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT TJ MAXIMUM
NUMBER CODE
V V mA
26MB..A 140 1400 1500
2
36MB..A 160 1600 1700

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FORWARD CONDUCTION
VALUES VALUES
PARAMETER SYMBOL TEST CONDITIONS UNITS
26MB..A 36MB..A
Resistive or inductive load 25 35
Maximum DC output current A
IO Capacitive load 20 28
at case temperature
65 60 °C
t = 10 ms No voltage 400 475
Maximum peak, one cycle t = 8.3 ms reapplied 420 500
IFSM A
non-repetitive forward current t = 10 ms 100 % VRRM 335 400
reapplied
t = 8.3 ms Initial  350 420
t = 10 ms No voltage TJ = TJ maximum 790 1130
t = 8.3 ms reapplied 725 1030
Maximum I2t for fusing I2t A2s
t = 10 ms 100 % VRRM 560 800
t = 8.3 ms reapplied 512 730
I2t for time tx = I2t x tx;
Maximum I2t for fusing I2t 5.6 11.3 kA2s
0.1  tx  10 ms, VRRM = 0 V
(16.7 % x  x IF(AV) < I <  x IF(AV)), 
Low level of threshold voltage VF(TO)1 0.70 0.74
TJ maximum V
High level of threshold voltage VF(TO)2 (I >  x IF(AV)), TJ maximum 0.75 0.79
(16.7 % x  x IF(AV) < I <  x IF(AV)), 
Low level forward slope resistance rt1 7.0 5.5
TJ maximum m
High level forward slope resistance rt2 (I >  x IF(AV)), TJ maximum 6.4 5.2
TJ = 25 °C, tp = 400 μs, IFM = 40 Apk (26MB),
Maximum forward voltage drop VFM 1.25 1.3 V
IFM = 55 Apk (36MB)
Maximum DC reverse current per diode IRRM TJ = 25 °C, at VRRM 10 10 µA
RMS isolation voltage base plate VISOL f = 50 Hz, t = 1 s 2700 2700 V

THERMAL AND MECHANICAL SPECIFICATIONS

VALUES VALUES
PARAMETER SYMBOL TEST CONDITIONS UNITS
26MB-A 36MB-A
Junction and storage
TJ, TStg -55 to 150 °C
temperature range
Maximum thermal resistance,
RthJC 1.7 1.35
junction to case per bridge
K/W
Maximum thermal resistance,
RthCS Mounting surface, smooth, flat, and greased 0.2
case to heatsink
Mounting torque ± 10 % Bridge to heatsink 2.0 Nm
Approximate weight 20 g

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Maximum Allowable Case temperature (°C)

150 1000

Instantaneous Forward Current (A)

26MB..A Series
130 Tj = 150°C
100
110
180°
90 (Rect)
10 Tj = 25°C
180°
70 (Sine)
26MB..A Series
50 1
0 5 10 15 20 25 30 0.5 1 1.5 2 2.5 3 3.5
Average Forward Current (A) Instantaneous Forward Voltage (V)

Fig. 1 - Current Ratings Characteristics Fig. 2 - Forward Voltage Drop Characteristics

Maximum Average Forward Power Loss (W)

50
26MB..A Series
180°
Rt
hS

Tj = 150°C
(Sine)
A

40
=
1

2
K/
K/

W
W
-D
el

3K
180°
ta

30 /W
R

(Rect) 4K
/W
5K
20 /W
7 K/W

10 10 K
/W

0
0 5 10 15 20 25
0 25 50 75 100 125 150
Average Forward Current (A) Maximum Allowable Ambient Temperature (°C)

Fig. 3 - Total Power Loss Characteristics

Peak Half Sine Wave Forward Current (A)

Peak Half Sine Wave Forward Current (A)

400 450
At Any Rated Load Condition And With Maximum Non Repetitive Surge Current
Rated Vrrm Applied Following Surge Versus Pulse Train Duration.
350 Initial Tj = 150°C Initial Tj = 150 °C
@ 60 Hz 0.0083 s 350 No Voltage Reapplied
@ 50 Hz 0.0100 s Rated Vrrm Reapplied
300

250 250

200
150
150
26MB..A series 26MB..A Series

100 50
1 10 100 0.01 0.1 1
Number of Equal Amplitude Half Cycle Current Pulses (N) Pulse Train Duration (s)

Fig. 4 - Maximum Non-Repetitive Surge Current Fig. 5 - Maximum Non-Repetitive Surge Current

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Maximum Allowable Case temperature (°C)
150 1000

Instantaneous Forward Current (A)

36MB..A Series

130 Tj = 150°C
100
110
180°
(Rect)
90
10 Tj = 25°C
180°
70 (Sine)
36MB..A Series

50 1
0 5 10 15 20 25 30 35 40 0.5 1 1.5 2 2.5 3 3.5
Average Forward Current (A) Instantaneous Forward Voltage (V)

Fig. 6 - Current Ratings Characteristics Fig. 7 - Forward Voltage Drop Characteristics

Maximum Average Forward Power Loss (W)

80
36MB..A Series
Tj = 150°C Rt
hS
180° A
=
60 0.
(Sine) 1K
7
K/
/W W
-D
elt
180° 2K a
R
/W
40 (Rect)
3K
/W
4 K/W
5 K/W
20
7 K/W

0
0 5 10 15 20 25 30 35
0 25 50 75 100 125 150
Average Forward Current (A) Maximum Allowable Ambient Temperature (°C)

Fig. 8 - Total Power Loss Characteristics

Peak Half Sine Wave Forward Current (A)
Peak Half Sine Wave Forward Current (A)

450 500
At Any Rated Load Condition And With Maximum Non Repetitive Surge Current
Rated Vrrm Applied Following Surge. Versus Pulse Train Duration.
400 450
Initial Tj = 150°C Initial Tj = 150°C
@ 60 Hz 0.0083 s No Voltage Reapplied
400
350 @ 50 Hz 0.0100 s Rated Vrrm Reapplied
350
300
300
250
250
200
200
150 36MB..A Series 150 36MB..A Series

100 100
1 10 100 0.01 0.1 1
Number of Equal Amplitude Half Cycle Current Pulses (N) Pulse Train Duration (s)

Fig. 9 - Maximum Non-Repetitive Surge Current Fig. 10 - Maximum Non-Repetitive Surge Current

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ORDERING INFORMATION TABLE

Device code VS- 36 MB 160 A

1 2 3 4 5

1 - Vishay Semiconductors product

26 = 25 A (average)
2 - Current rating code
36 = 35 A (average)
3 - Circuit configuration:
MB = Single phase european coding
4 - Voltage code x 10 = VRRM
5 - Diode bridge rectifier:
A = 26 MB, 36 MB series

CIRCUIT CONFIGURATION

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95326

Revision: 15-Jan-2019 5 Document Number: 93564

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 Outline Dimensions
Vishay Semiconductors

D-34

DIMENSIONS in millimeters (inches)

0.8 ± 0.05 6.35 ± 0.1

(0.03 ± 0.002) (0.25 ± 0.004)

10.5 ± 0.15
(0.41 ± 0.006)
20.3 ± 0.15
(0.80 ± 0.006)

~
-

+ 1.0
21.5
- 0.5 9.5 ± 0.5 28.5 ± 0.15
+ 0.039 (0.37 ± 0.020) (1.12 ± 0.006)
(0.85 )
- 0.020
12.7 ± 0.1
(0.5 ± 0.004)
~

5.25 ± 0.15
(0.21 ± 0.006)
12.7 ± 0.1
(0.5 ± 0.004)

28.5 ± 0.15
(1.12 ± 0.006)
Not to scale

Suggested plugging force:

200 N max; axially applied to fast-on terminals

Document Number: 95326 For technical questions, contact: indmodules@vishay.com www.vishay.com

Revision: 07-Jul-08 1
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