AOD407

P-Channel Enhancement
Mode Field Effect Transistor

General Description Features

The AOD407 uses advanced trench technology to VDS (V) = -60V
provide excellent RDS(ON), low gate charge and low ID = -12A (VGS = -10V)
gate resistance. With the excellent thermal resistance RDS(ON) < 115mW (VGS = -10V)
of the DPAK package, this device is well suited for RDS(ON) < 150mW (VGS = -4.5V)
high current load applications.
100% UIS tested
-RoHS Compliant 100% RG tested
-Halogen Free*

TO252
DPAK
TopView Bottom View
D

G
D G
D S S

G S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS -60 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TC=25°C -12
Current G TC=100°C ID -10 A
Pulsed Drain Current C IDM -30
Avalanche Current C IAR -12 A
C
Repetitive avalanche energy L=0.1mH EAR 23 mJ
TC=25°C 50
PD W
Power Dissipation B TC=100°C 25
TA=25°C 2.5
A PDSM W
Power Dissipation TA=70°C 1.6
Junction and Storage Temperature Range TJ, TSTG -55 to 175 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
A
Maximum Junction-to-Ambient t ≤ 10s 16.7 25 °C/W
A RqJA
Maximum Junction-to-Ambient Steady-State 40 50 °C/W
B
Maximum Junction-to-Case Steady-State RqJC 2.5 3 °C/W

Rev.8.1: September 2023 www.aosmd.com Page 1 of 6

 AOD407

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=-250mA, VGS=0V -60 V
VDS=-48V, VGS=0V -0.003 -1
IDSS Zero Gate Voltage Drain Current mA
TJ=55°C -5
IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=-250mA -1.5 -2.1 -3 V
ID(ON) On state drain current VGS=-10V, VDS=-5V -30 A
VGS=-10V, ID=-12A 91 115
mW
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 150
VGS=-4.5V, ID=-8A 114 150 mW
gFS Forward Transconductance VDS=-5V, ID=-12A 12.8 S
VSD Diode Forward Voltage IS=-1A,VGS=0V -0.76 -1 V
IS Maximum Body-Diode Continuous Current -12 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 987 pF
Coss Output Capacitance VGS=0V, VDS=-30V, f=1MHz 114 pF
Crss Reverse Transfer Capacitance 46 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 9.5 15 W
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V) 15.8 22 nC
Qg(4.5V) Total Gate Charge (4.5V) 7.4 12 nC
VGS=-10V, VDS=-30V, ID=-12A
Qgs Gate Source Charge 3 nC
Qgd Gate Drain Charge 3.5 nC
tD(on) Turn-On DelayTime 9 ns
tr Turn-On Rise Time VGS=-10V, VDS=-30V, RL=2.5W, 10 ns
tD(off) Turn-Off DelayTime RGEN=3W 25 ns
tf Turn-Off Fall Time 11 ns
trr Body Diode Reverse Recovery Time IF=-12A, dI/dt=100A/ms 27.5 ns
Qrr Body Diode Reverse Recovery Charge IF=-12A, dI/dt=100A/ms 30 nC
A: The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R qJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsin k, assuming a
maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).

APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO MAKE
CHANGES TO PRODUCT SPECIFICATIONS WITHOUT NOTICE. IT IS THE RESPONSIBILITY OF THE CUSTOMER TO EVALUATE SUITABILITY
OF THE PRODUCT FOR THEIR INTENDED APPLICATION. CUSTOMER SHALL COMPLY WITH APPLICABLE LEGAL REQUIREMENTS,
INCLUDING ALL APPLICABLE EXPORT CONTROL RULES, REGULATIONS AND LIMITATIONS.

AOS' products are provided subject to AOS' terms and conditions of sale which are set forth at:
http://www.aosmd.com/terms_and_conditions_of_sale

Rev.8.1: September 2023 www.aosmd.com Page 2 of 6

 AOD407

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 10
-10V -6V VDS=-5V
25
-7V 8
-5V
20
-4.5V 6
-ID (A)

-ID(A)
15 125°C
VGS=-4V
4
10 25°C
-3.5V
2
5
-3V

0 0
0 1 2 3 4 5 0 1 2 3 4 5

-VDS (Volts) -VGS(Volts)

Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

220 2

200 VGS=-10V
Normalized On-Resistance

1.8 ID=-12A
180 VGS=-4.5V
1.6
RDS(ON) (mW)

160 VGS=-4.5V
1.4 ID=-8A
140
VGS=-10V 1.2
120

100 1

80 0.8
0 5 10 15 20 25 0 25 50 75 100 125 150 175

-ID (A) Temperature (°C)

Figure 3: On-Resistance vs. Drain Current and Gate Figure 4: On-Resistance vs. Junction Temperature
Voltage

300 1.0E+01
ID=-12A
1.0E+00
250
1.0E-01
RDS(ON) (mW)

200 125°C
1.0E-02
-IS (A)

125°C
1.0E-03
150
25°C
25°C 1.0E-04
100
1.0E-05

50 1.0E-06
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2

-VGS (Volts) -VSD (Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics

Rev.8.1: September 2023 www.aosmd.com Page 3 of 6

 AOD407

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 1200
VDS=-30V Ciss
ID=-12A
1000
8

Capacitance (pF)
800
-VGS (Volts)

6
600
4
400
Coss Crss
2
200

0 0
0 4 8 12 16 0 5 10 15 20 25 30
-Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0 200
TJ(Max)=175°C
TC=25°C
160

10.0 RDS(ON)
Power (W)

120
-ID (Amps)

limited 10ms

80
1.0 100ms
TJ(Max)=175°C, DC
1ms 40
TA=25°C
10ms

0.1 0
0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10
-VDS (Volts) Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note F) Case (Note F)

10
D=Ton/T In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZqJC Normalized Transient

TJ,PK=TC+PDM.ZqJC.RqJC
RqJC=3°C/W
Thermal Resistance

0.1 PD

Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Rev.8.1: September 2023 www.aosmd.com Page 4 of 6

 AOD407

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

14 60
L ID
-ID(A), Peak Avalanche Current

tA 
BV  VDD 50

Power Dissipation (W)

12
40

10 30

20
8
10
TA=25°C
6 0
0.00001 0.0001 0.001 0 25 50 75 100 125 150 175

Time in avalanche, tA (s) TCASE (°C)

Figure 12: Single Pulse Avalanche capability Figure 13: Power De-rating (Note B)

14 60
TA=25°C
12 50
Current rating -ID(A)

10
40
Power (W)

8
30
6
20
4

2 10

0 0
0 25 50 75 100 125 150 175 0.001 0.01 0.1 1 10 100 1000
TCASE (°C) Pulse Width (s)
Figure 14: Current De-rating (Note B) Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZqJA.RqJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZqJA Normalized Transient

RqJA=50°C/W
Thermal Resistance

0.1

PD
0.01
Single Pulse
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Pulse Width (s)

Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

Rev.8.1: September 2023 www.aosmd.com Page 5 of 6

 AOD407

Gate Charge Test Circuit & Waveform

Vgs
Qg
- -10V
VDC
-
+ Vds Qgs Qgd
VDC
+
DUT
Vgs

Ig

Charge

Resistive Switching Test Circuit & Waveforms

RL
Vds ton toff

td(on) tr td(off) tf
Vgs
-
Vgs DUT VDC
Vdd 90%
Rg
+

Vgs 10%
Vds

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

2
L EAR= 1/2 LIAR
Vds

Id Vds
- BVDSS
Vgs
Vgs VDC
Vdd
Rg
+ Id
I AR
DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L -Isd -I F
Isd dI/dt
+ Vdd -I RM
Vgs VDC
Vdd
Ig
- -Vds

Rev.8.1: September 2023 www.aosmd.com Page 6 of 6