DMP2305U-7

P-CHANNEL ENHANCEMENT MODE MOSFET

Features Mechanical Data

 Low On-Resistance  Case: SOT23
 60mΩ @ VGS = -4.5V  Case Material: Molded Plastic, “Green” Molding Compound.
 90mΩ @ VGS = -2.5V UL Flammability Classification Rating 94V-0
 113mΩ @ VGS = -1.8V  Moisture Sensitivity: Level 1 per J-STD-020
 Low Input Capacitance  Terminals: Finish  Matte Tin annealed over Copper leadframe.
NEW PRODUCT

Solderable per MIL-STD-202, Method 208

 Fast Switching Speed
 Terminals Connections: See Diagram Below
 Low Input/Output Leakage
 Weight: 0.008 grams (approximate)
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 Standards for High Reliability

D ra in

G a te

S o u rc e
G S

Top View Internal Schematic Top View

Ordering Information (Note 4)

Part Number Qualification Case Packaging
DMP2305U-7 Commercial SOT23 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

23P = Product Type Marking Code

YM

23P YM = Date Code Marking

Y = Year (ex: W = 2009)
M = Month (ex: 9 = September)

Date Code Key

Year 2009 2010 2011 2012 2013 2014 2015
Code W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D

DMP2305U-7 1 of 6 November 2012

Document number: DS36129 Rev. 1 - 5 www.diodes.com © Diodes Incorporated
 DMP2305U-7

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic Symbol Value Units
Drain-Source Voltage VDSS -20 V
Gate-Source Voltage VGSS ±12 V
Steady TA = 25°C -4.2
Continuous Drain Current (Note 5) ID A
State TA = 70°C -3.4
NEW PRODUCT

Pulsed Drain Current (Note 6) IDM -10 A

Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5) PD 1.4 W
Thermal Resistance, Junction to Ambient @TA = 25°C RθJA 90 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BVDSS -20   V VGS = 0V, ID = -250A
Zero Gate Voltage Drain Current TJ = 25C IDSS   -1.0 A VDS = -20V, VGS = 0V
Gate-Source Leakage IGSS   ±100 nA VGS = 8V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage VGS(th) -0.5 - -0.9 V VDS = VGS, ID = -250A
45 60 VGS = -4.5V, ID = -4.2A
Static Drain-Source On-Resistance RDS (ON)  60 90 mΩ VGS = -2.5V, ID = -3.4A
87 113 VGS = -1.8V, ID = -2.0A
Forward Transfer Admittance |Yfs|  9  S VDS = -5V, ID = -4A
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss  727  pF
VDS = -20V, VGS = 0V
Output Capacitance Coss  69  pF
f = 1.0MHz
Reverse Transfer Capacitance Crss  64  pF
Gate Resistance RG  23  Ω VGS = 0V, VDS = 0V, f = 1.0MHz
SWITCHING CHARACTERISTICS
Total Gate Charge Qg  7.6  nC
Gate-Source Charge Qgs  1.4  nC VGS = -4.5V, VDS = -4V, ID = -3.5A
Gate-Drain Charge Qgd  1.2  nC
Turn-On Delay Time tD(on)  14.0  ns
Turn-On Rise Time tr  13.0  ns VDS = -4V, VGS = -4.5V,
Turn-Off Delay Time tD(off)  53.8  ns RL = 4, RG = 6, ID = -1A
Turn-Off Fall Time tf  23.2  ns
Notes: 5. Device mounted on FR-4 PCB with 2oz. Copper and test pulse width t ≤ 10s.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.

DMP2305U-7 2 of 6 November 2012

Document number: DS36129 Rev. 1 - 5 www.diodes.com © Diodes Incorporated
 DMP2305U-7

20 20
VGS = 8V

16 VGS = 4.5V VDS = 5V

16
ID, DRAIN CURRENT (A)

VGS = 3.0V

ID, DRAIN CURRENT (A)

VGS = 2.5V
12 12
NEW PRODUCT

VGS = 2.0V

8 8

TA = 150蚓
4 4
T A = 125蚓 TA = 85蚓
VGS = 1.5V
T A = 25蚓

TA = -55蚓
0 0
0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3
VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic Fig. 2 Typical Transfer Characteristic

0.1 0.1

RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()

R DS(ON), DRAIN-SOURCE ON-RESISTANCE ()

VGS = 4.5V

0.08 0.08
TA = 150蚓

VGS = 2.5V TA = 125蚓

0.06 0.06
TA = 85蚓

T A = 25蚓
0.04 VGS = 4.5V 0.04

TA = -55蚓

0.02 0.02

0 0
0 5 10 15 20 0 4 8 12 16 20
ID, DRAIN-SOURCE CURRENT (A) ID, DRAIN CURRENT (A)
Fig. 3 Typical On-Resistance Fig. 4 Typical On-Resistance
vs. Drain Current and Gate Voltage vs. Drain Current and Temperature

1.6 0.1
RDSON, DRAIN-SOURCE ON-RESISTANCE ()
ON-RESISTANCE (NORMALIZED)

1.4 0.08
RDSON, DRAIN-SOURCE

VGS = 2.5V
1.2 0.06 ID = 5A

1.0 0.04
VGS = 4.5V VGS = 4.5V
ID = 10A ID = 10A

0.8 0.02
VGS = 2.5V
ID = 5A

0.6 0
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (蚓 ) TA, AMBIENT TEMPERATURE (蚓 )
Fig. 5 On-Resistance Variation with Temperature Fig. 6 On-Resistance Variation with Temperature

DMP2305U-7 3 of 6 November 2012

Document number: DS36129 Rev. 1 - 5 www.diodes.com © Diodes Incorporated
 DMP2305U-7

1.0 20
VGS(TH), GATE THRESHOLD VOLTAGE (V)

0.8 16

IS, SOURCE CURRENT (A)

ID = 1mA

0.6 12
ID = 250渙
NEW PRODUCT

TA = 25蚓

0.4 8

0.2 4

0 0
-50 -25 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1 1.2 1.4
TA, AMBIENT TEMPERATURE (蚓 ) V SD, SOURCE-DRAIN VOLTAGE (V)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Diode Forward Voltage vs. Current

10,000 10,000

TA = 150蚓

IDSS, LEAKAGE CURRENT (nA)

1,000
TA = 125蚓
C, CAPACITANCE (pF)

1,000
Ciss 100
T A = 85蚓

10
C oss
100 TA = 25蚓
Crss
1
TA = -55蚓

10 0.1
0 4 8 12 16 20 0 2 4 6 8 10 12 14 16 18 20
VDS, DRAIN-SOURCE VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Total Capacitance Fig. 10 Typical Leakage Current vs. Drain-Source Voltage

100
PW = 10µ s

RDS(on)
10
Limited
-ID, DRAIN CURRENT (A)

DC
1
PW = 10s
PW = 1s
PW = 100ms
PW = 10ms
0.1 PW = 1ms
PW = 100盜

0.01
0.01 0.1 1 10 100
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 11 SOA, Safe Operation Area

DMP2305U-7 4 of 6 November 2012

Document number: DS36129 Rev. 1 - 5 www.diodes.com © Diodes Incorporated
 DMP2305U-7

r(t), TRANSIENT THERMAL RESISTANCE

D = 0.7
D = 0.5

D = 0.3

0.1
D = 0.1
D = 0.9
D = 0.05 RJA(t) = r(t) * RJA
NEW PRODUCT

RJA = 170蚓 /W

D = 0.02
P(pk)
t1
0.01
D = 0.01
t2
TJ - TA = P * R JA(t)
D = 0.005 Duty Cycle, D = t1/t2

D = Single Pulse
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIME (s)
Fig. 12 Transient Thermal Response

Package Outline Dimensions

A
SOT23
Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
B C C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H H 2.80 3.00 2.90
J 0.013 0.10 0.05
K M K 0.903 1.10 1.00
K1
K1 - - 0.400
D L 0.45 0.61 0.55
J F L
G M 0.085 0.18 0.11
 0° 8° -
All Dimensions in mm

Suggested Pad Layout

Y
Dimensions Value (in mm)
Z 2.9
Z X 0.8
C
Y 0.9
C 2.0
E 1.35

X E

DMP2305U-7 5 of 6 November 2012

Document number: DS36129 Rev. 1 - 5 www.diodes.com © Diodes Incorporated
 DMP2305U-7

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NEW PRODUCT

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DMP2305U-7 6 of 6 November 2012

Document number: DS36129 Rev. 1 - 5 www.diodes.com © Diodes Incorporated