MCC
  omponents

21201 Itasca Street Chatsworth

 2N3906
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Features
• Through Hole Package
• Capable of 600mWatts of Power Dissipation PNP General
Purpose Amplifier
Pin Configuration
Bottom View C B E

Electrical Characteristics @ 25°C Unless Otherwise Specified TO-92

Symbol Parameter Min Max Units A E
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage* 40 Vdc
(I C=1.0mAdc, IB=0)
V(BR)CBO Collector-Base Breakdown Voltage 40 Vdc
(I C=10µAdc, IE=0) B
V(BR)EBO Emitter-Base Breakdown Voltage 5.0 Vdc
(I E=10µAdc, IC=0)
IBL Base Cutoff Current 50 nAdc
(VCE=30Vdc, VBE=3.0Vdc)
ICEX Collector Cutoff Current 50 nAdc
(VCE=30Vdc, VBE=3.0Vdc)
ON CHARACTERISTICS C
hFE DC Current Gain*
(I C=0.1mAdc, VCE=1.0Vdc) 60
(I C=1.0mAdc, VCE=1.0Vdc) 80
(I C=10mAdc, VCE=1.0Vdc) 100 300
(I C=50mAdc, VCE=1.0Vdc) 60
(I C=100mAdc, VCE=1.0Vdc) 30
VCE(sat) Collector-Emitter Saturation Voltage
(I C=10mAdc, IB=1.0mAdc) 0.25 Vdc
D
(I C=50mAdc, IB=5.0mAdc) 0.4
VBE(sat) Base-Emitter Saturation Voltage
(I C=10mAdc, IB=1.0mAdc) 0.65 0.85 Vdc
(I C=50mAdc, IB=5.0mAdc) 0.95
SMALL-SIGNAL CHARACTERISTICS
fT Current Gain-Bandwidth Product
(I C=10mAdc, VCE=20Vdc, f=100MHz) 250 MHz
Cobo Output Capacitance G
(VCB=5.0Vdec, IE=0, f=100MHz) 4.5 pF
Cibo Input Capacitance DIMENSIONS
(VBE=0.5Vdc, IC=0, f=100kHz) 10.0 pF
NF Noise Figure INCHES MM
DIM MIN MAX MIN MAX NOTE
(IC=100µAdc, VCE=5.0Vdc, RS=1.0kΩ 4.0 dB A .175 .185 4.45 4.70
f=10Hz to 15.7kHz) B .175 .185 4.46 4.70

SWITCHING CHARACTERISTICS C
D
.500
.016
---
.020
12.7
0.41
---
0.63
td Delay Time (VCC=3.0Vdc, VBE=0.5Vdc 35 ns E .135 .145 3.43 3.68
tr Rise Time IC=10mAdc, IB1=1.0mAdc) 35 ns G .095 .105 2.42 2.67

ts Storage Time (VCC=3.0Vdc, IC=10mAdc 225 ns

tf Fall Time IB1=IB2=1.0mAdc) 75 ns
*Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%

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2N3906 MCC
Base-Emitter ON Voltage vs
DC Current Gain vs Collector Current Collector Current
220 1.2
VCE = 1.0V VCE = 5.0V
200 1.0
TA = 25°C

160 0.8
hFE VBE(ON) - (V)
120 0.6
TA = 100°C
80 0.4

40 0.2

0
0.1 1 10 100 0.1 1.0 10 100
IC (mA) IC - (mA)

Collector-Emitter Saturation Base-Emitter Saturation

Volatge vs Collector Current Voltage vs Collector Current
0.6 1.4
IC/IB = 10 IC/IB = 10
TA = 25°C TA = 25°C
0.5 1.2

0.4 1.0
VCE(SAT) - (V) VBE(SAT) - (V)
0.3 0.8

0.2 0.6

0.1 0.4

0 0.2
1.0 10 100 1000 1.0 10 100 1000
IC - (mA) IC - (mA)

Collector-Base Diode Reverse Common Base Open Circuit Input and

Current vs Temperature Output Capacitance vs Reverse Bias Voltage
100 1.0
COBO TA = 25°C
TO-92
8
VCB = 20V
10
6
pF
ICBO - (mA)
CIBO
4
1.0

0.1 0
0 25 50 75 100 125 150 0.1 1.0 10

TJ - (°C)
Volts - (V)

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2N3906 MCC
Maximum Power Dissipation vs Noise Figure vs
Ambient Temperature Source Resistance
800 12
VCE = 5.0V
f = 1.0kHz
10
600
TO-92 IC = 1.0mA
8
PD(MAX) - (mW) NF - (dB)
400 6
IC = 100µA
4
200
SOT-23 2

0 0
0 50 100 150 200 0.1 1.0 10 100
TA - (°C) RS - (kΩ)

Contours of Constant Gain

Bandwidth Product (fT) Current Gain
24 1000
VCE = 10V
f = 1.0kHz
20

16

VCE - (V) 12 hfe 100

0 10
0.1 1.0 10 100 0.1 1.0 10
IC - (mA)
*100MHz increments from 100 IC - (mA)
to 700, 750 and 800MHz

Noise Figure vs Switching Times vs

Frequency Collector Current
6 1000
VCE = 5.0V IB1 = IB2 = IC/10
5
ts
4 100

NF - (dB) IC = 100µA RS = 200Ω T - (ns) tf

3

2 10
IC = 1.0mA RS = 200Ω tr
1 IC = 100µA RS = 2.0kΩ td

0 1.0
0.1 1.0 10 100 1.0 10 100
IC - (mA)
f - (kHz)

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2N3906 MCC
Input Impedance Output Admittance
10 1000
VCE = 10V VCE = 10V
f = 1.0kHz f = 1.0kHz

hoe - (µΩ)
hie - (kΩ)

1.0 100

0.1 10
0.1 1.0 10 0.1 1.0 10
IC - (mA) IC - (mA)

Turn On and Turn Off Times vs

Voltage Feedback Ratio Collector Current
100 1000

-4 toff
hfe - (X10 ) 100

10 T - (ns)
ton

10

ton IB1 = IC/10

VBE(OFF) = 0.5V
toff IB1 = IB2 = IC/10
1.0 1.0
0.1 1.0 10 1.0 10 100

IC - (mA) IC - (mA)

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