1.

Simulation and Analysis of Lead based Perovskite Solar Cell

using SCAPS-1D

The paper presents a simulation and analysis of a lead-based perovskite solar cell model
using the Solar Cell Capacitance Simulator (SCAPS). The solar cell architecture consists of
glass/FTO/PCBM/CH3NH3PbI3/PEDOT:PSS/Ag layers. The simulation aims to optimize
various parameters such as the thickness of the absorber layer, defect density, and doping
concentrations of the Electron Transport Material (ETM) and Hole Transport Material (HTM)
to achieve high efficiency.
The findings of the simulation study are as follows:
1. The optimized thickness of the CH3NH3PbI3 absorber layer is determined to be
0.3μm, resulting in the maximum power conversion efficiency (PCE) of 31.77%.
2. The total defect density of the absorber layer ranges from 1013 cm-3 to 1018 cm-3,
and the minimum defect density predicted is 1014 cm-3.
3. The doping concentrations (ND and NA) of the HTM and ETM vary from 1014 cm-3 to
1019 cm-3. The highest PCE is achieved when ND and NA are both set to 1019 cm-3.
4. The predicted values for the optimized model are: short circuit current density (Jsc)
of 25.60 mA/cm2, open circuit voltage (Voc) of 1.52V, and fill factor (FF) of 81.58%.
The proposed simulated model demonstrates an improvement in the efficiency of the
perovskite solar cell, reaching 31%, compared to previous models by optimizing material
parameters. The study provides valuable information for fabricating perovskite solar cells
and selecting appropriate material parameters to achieve higher efficiencies.

2. Investigating the performance of formamidinium tin-based

perovskite solar cell by SCAPS device simulation

The abstract discusses the simulation of formamidinium tin iodide (HC(NH2)2SnI3 or FASnI3)
based solar cells using the SCAPS software. FASnI3 is a tin-based perovskite material that is
considered a promising alternative to lead-based perovskites in solar cell technology due to
its wider absorption and lower toxicity. However, FASnI3 has temperature instability issues.
The study aims to investigate the impact of various parameters on the device performance
and optimize the design for improved power efficiency.
The initial solar cell structure consists of a glass substrate, FTO (fluorine-doped tin oxide)
layer, TiO2 (electron transport layer), FASnI3 absorber layer, Spiro-OMeTAD (hole transport
layer), and a metal back contact. The energy band diagram and parameters of each layer are
provided.
The simulation parameters are set based on published literature and experimental data. The
initial parameters of the solar cell are obtained from a previous experimental cell with a
recorded efficiency of 1.66%. The simulation results using these parameters show good
agreement with the measurements.
The study focuses on the effect of changing parameters such as defect density, absorber
thickness, conduction band offset (CBO), valence band offset (VBO), doping concentration,
and thickness of the electron and hole transport layers. Different hole transport layer (HTL)
and electron transport layer (ETL) candidates including CuI, Cu2O, NiO, ZnO, and ZnSe are
also investigated.
The results demonstrate that decreasing the defect density leads to reduced carrier
recombination and improved device performance. The diffusion length and power
conversion efficiency (PCE) are shown to be dependent on the defect density. Optimization
of parameters through the presented parametric study leads to improved cell performance.
The final optimized solar cell shows a short-circuit current density (Jsc) of 22.65 mA/cm2,
open-circuit voltage (Voc) of 0.92 V, fill factor (FF) of 67.74%, and PCE of 14.03%.
Overall, the study provides insights into the simulation and optimization of FASnI3-based
solar cells, highlighting the importance of various parameters in achieving higher power
efficiency.

3. Performance analysis of copper–indium–gallium–

diselenide (CIGS) solar cells with various buffer layers
by SCAPS
The paper investigates different buffer layers as potential replacements for CdS in CIGS
(Copper Indium Gallium Selenide) solar cells. The efficiency of CIGS cells with various buffer
layers is simulated and compared. The results indicate that ZnO buffer layer-based cells
achieved the highest efficiency of 21.16%, suggesting its potential as a replacement for CdS.
Additionally, ZnS (O,OH), ZnSe, Zn1 xMgxO, and InS-based buffer layers achieved efficiencies
of 19.2%, 19.15%, 14.99%, and 13.43%, respectively. ZnO, ZnS (O,OH), and ZnSe are
particularly promising due to their higher band gaps compared to CdS.
The study also examines the effect of operating temperature on CIGS cells with different
buffer layers. It is found that the efficiency of CdS-buffered cells is significantly affected by
temperature, with a decline of 0.32% per degree Kelvin (K). Higher temperatures result in
reduced electron and hole mobility, carrier concentrations, and band gaps, leading to lower
cell efficiency. Similar trends are observed for Cd-free buffer layers such as ZnS (O,OH) and
ZnSe, with a temperature coefficient of -0.27% per K and -0.32% per K, respectively.
However, the Zn1 xMgxO and InS-based cells showed an unusual increasing trend in
performance within the temperature range of 300 K to 340 K.
In conclusion, the study suggests that ZnO, ZnS (O,OH), and ZnSe are promising candidates
for replacing CdS in CIGS solar cells, with ZnO exhibiting the highest efficiency of 21.16%.
The efficiency of the various buffer layers is affected by operating temperature, and
differences in temperature gradients are observed. ZnS (O,OH) and ZnSe show potential with
efficiencies greater than 19% and a lower temperature gradient of -0.27% per K, indicating
their suitability for CdS replacement. ZnO also demonstrates promising potential with an
efficiency exceeding 21%.

4. Numerical study of Cs2TiX6 (X=Br−, I−, F− and Cl−)

based perovskite solar cell using SCAPS-1D device simulation
The paper titled "Numerical Simulation and Optimization of Lead-Free Perovskite Solar Cells
with Cesium Titanium (IV) Halide Thin Film Absorbers" presents a study on the performance
of lead-free perovskite solar cells using the Solar Cell Capacitance Simulator (SCAPS). The
authors propose a simple cell architecture consisting of CuSCN/Cs2TiX6/CdS/Si, where X
represents different halide elements (Br, I, F, Cl). The effects of varying the thickness of the
absorbing layer and the device working temperature on the solar cell performance are
investigated through simulations.
The study aims to optimize the device parameters and determine the optimal thickness and
temperature for each Cs2TiX6 active material. The results show that the optimized
thicknesses for Cs2TiBr6, Cs2TiI6, Cs2TiF6, and Cs2TiCl6 are 1.0 μm, 1.5 μm, 1.5 μm, and 1.5
μm, respectively. The optimized device temperatures are found to be 80 °C, 60 °C, 75 °C, and
75 °C for Cs2TiBr6, Cs2TiI6, Cs2TiF6, and Cs2TiCl6, respectively.
The paper highlights the advantages of using lead-free perovskite materials in solar cells,
such as improved stability and reduced environmental concerns compared to traditional
lead-based materials. The Cs2TiX6 materials exhibit tunable band gaps suitable for
photovoltaic applications and balanced electron-hole diffusion lengths.
The authors employed the SCAPS-1D simulation software to analyze the device parameters,
including short circuit current density (JSC), open circuit voltage (VOC), power conversion
efficiency (PCE), and maximum power generation (PMAX). The simulations demonstrate that
increasing the thickness of the absorbing layer initially improves the device performance,
but beyond a certain point, further thickness increase does not significantly enhance the
parameters.
In conclusion, the study provides valuable insights into optimizing lead-free perovskite solar
cells by varying the absorbing layer thickness and device temperature. The proposed cell
architecture and simulation results contribute to the development of efficient and
environmentally friendly solar cell technologies. Further experimental investigations and
device fabrication are warranted to validate the simulation findings.

5. Development of CZTGS/CZTS tandem thin film solar

cell using SCAPS-1D
The paper presents a numerical modeling and simulation study of a monolithic CZTGS/CZTS
tandem structure for enhancing the performance of a copper zinc tin sulfide (CZTS) solar
cell. The aim is to improve the efficiency of the CZTS solar cell by using a double junction
CZTGS/CZTS tandem structure. The top cell consists of a non-toxic element (germanium) to
tune the band gap of copper zinc tin germanium sulfide (CZTGS), while the bottom cell is
CZTS-based. The best J-V characteristics of the top cell were obtained with a composition
ratio of Cu2ZnSn0.8Ge0.2S4, achieving an efficiency of 9.39%.
The simulation of the bottom cell based on state-of-the-art records resulted in an efficiency
of 8.4%, which is in good agreement with experimental results. The tandem structure with a
top cell absorber thickness of 0.65 μm and a bottom cell absorber thickness of 3.00 μm,
under current matching condition of 18.53 mA/cm2, achieved an efficiency of 17.51%. This
represents a significant improvement in efficiency compared to a single junction CZTS thin
film solar cell.
The paper discusses the motivation for developing thin film solar cells and the challenges
associated with existing technologies such as CIGS and CdTe. It highlights the potential of
CZTS as an alternative absorber material and describes the methodology used in the
numerical simulation, which employed the SCAPS-1D software.
Overall, the study demonstrates the potential of the CZTGS/CZTS tandem structure for
improving the efficiency of CZTS solar cells and provides valuable insights into the band gap
tuning and device optimization processes.

6. Numerical Simulation of Cu2ZnSnS4 Based Solar Cells

with In2S3 Buffer Layers by SCAPS-1D
The paper titled "Numerical Simulation of Cu2ZnSnS4 Based Solar Cells with In2S3 Buffer
Layers by SCAPS-1D" by Peijie Lin, Lingyan Lin, Jinling Yu, Shuying Cheng, Peimin Lu, and Qiao
Zheng discusses the performance of Cu2ZnSnS4 (CZTS) based solar cells using a simulation
program called Solar Cell Capacitance Simulator (SCAPS). The study investigates the
influence of various factors such as defect density, carrier density, CZTS absorber layer
thickness, working temperature, In2S3 buffer layer thickness, and its carrier density on the
cell performance.
The authors highlight the potential of CZTS as a compound semiconductor for thin-film solar
cells due to its high absorption coefficient, direct band gap, and non-toxic and abundant
chemical elements. They also emphasize the need for alternative buffer layers to replace CdS
due to its low band gap and associated pollution and absorption losses. In2S3 is suggested as
a promising candidate due to its stability and higher band gap.
The researchers utilize numerical simulations based on SCAPS-1D to investigate the effects of
various parameters on CZTS/In2S3 heterojunction solar cells. The simulation results suggest
that an optimal CZTS absorber layer thickness of 2500 to 3000 nm and an In2S3 buffer layer
thickness in the range of 20 to 30 nm lead to improved cell performance. It is also crucial to
control the CZTS defect density below 1 x 10^13 cm-3 for higher efficiency cells. The study
demonstrates that increased working temperature significantly influences solar cell
efficiency, with a calculated temperature coefficient of approximately -0.17%/K.
The authors achieve an optimal photovoltaic property with an efficiency of 19.28% (Jsc =
23.37 mA/cm2, Voc = 0.958 V, and FF = 86.13%) in their numerical simulation. These findings
provide valuable insights for fabricating higher efficiency CZTS solar cells.

7. Analysis of absorber layer properties effect on CIGS

solar cellperformance using SCAPS
The article discusses a numerical simulation and analysis of the performance of a copper-
indium-gallium-diselenide (CIGS) solar cell. The authors used the Solar Cell Capacitance
Simulator (SCAPS) software to perform multiple measurements and simulate the impact of
various properties of the absorber layer on the cell's output parameters.
The authors formulated mathematical functions for the CIGS band gap and electron affinity
as a function of gallium (Ga) content. These functions were used to predict the absorber
layer band gap at different Ga content and simulate the cell's performance. The analysis
revealed that the optimum energy band gap of the absorber layer was found to be 1.2 eV
corresponding to a Ga content of x = 0.3.
Additionally, the authors formulated the cell efficiency as a function of Ga content in the
absorber layer. The effect of absorber layer thickness on cell performance was also
simulated, and it was found that the optimal thickness range was between 2 μm and 3 μm
for cells with low and optimum absorber layer band gaps. However, cells with a wide
absorber layer band gap would require an increase in absorber layer thickness, leading to a
reduction in cell efficiency.

8. Simulation of High Efficiency CIGS solar cells with

SCAPS-1D software