TSOP312..
Vishay Semiconductors
IR Receiver Modules for Remote Control Systems
Description
The TSOP312.. - series are miniaturized receivers for
infrared remote control systems. PIN diode and
preamplifier are assembled on lead frame, the epoxy
package is designed as IR filter.
The demodulated output signal can directly be
decoded by a microprocessor. TSOP312.. is the stan-
dard IR remote control receiver series for 3 V supply 1
voltage, supporting all major transmission codes. 2
94 8691
This component has not been qualified according to 3
automotive specifications.
Features Mechanical Data
• Photo detector and preamplifier in one Pinning:
package 1 = GND, 2 = VS, 3 = OUT
• Internal filter for PCM frequency
e3
• Improved shielding against electrical field
Parts Table
disturbance
Part Carrier Frequency
• TTL and CMOS compatibility
TSOP31230 30 kHz
• Output active low
TSOP31233 33 kHz
• Supply voltage: 2.7 V to 5.5 V
TSOP31236 36 kHz
• Improved immunity against ambient light
TSOP31237 36.7 kHz
• Lead (Pb)-free component
TSOP31238 38 kHz
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC TSOP31240 40 kHz
TSOP31256 56 kHz
Block Diagram Application Circuit
17170
R1 = 100 Ω
Transmitter TSOPxxxx
16832 with VS + VS
2 TSALxxxx C1 =
Circuit
4.7 µF
VS µC
30 kΩ OUT
3 VO
GND GND
Band Demo- OUT
Input AGC Pass dulator
1 R1 and C1 recommended to suppress power supply
disturbances. The output voltage should not be
PIN Control Circuit GND hold continuously at a voltage below VO = 2.0 V
by the external circuit.
www.vishay.com Document Number 82217
74 Rev. 1.3, 19-Jan-07
TSOP312..
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter Test condition Symbol Value Unit
Supply Voltage (Pin 2) VS - 0.3 to V
+ 6.0
Supply Current (Pin 2) IS 3 mA
Output Voltage (Pin 3) VO - 0.3 to V
(VS + 0.3)
Output Current (Pin 3) IO 10 mA
Junction Temperature Tj 100 °C
Storage Temperature Range Tstg - 25 to + 85 °C
Operating Temperature Range Tamb - 25 to + 85 °C
Power Consumption (Tamb ≤ 85 °C) Ptot 30 mW
Soldering Temperature t ≤ 10 s, 1 mm from case Tsd 260 °C
Electrical and Optical Characteristics
Tamb = 25 °C, unless otherwise specified
VS = 3 V
Parameter Test condition Symbol Min Typ. Max Unit
Supply Current (Pin 3) Ev = 0 ISD 0.7 1.2 1.5 mA
Ev = 40 klx, sunlight ISH 1.3 mA
Supply Voltage VS 2.7 5.5 V
Transmission Distance Ev = 0, test signal see fig. 1, d 35 m
IR diode TSAL6200,
IF = 250 mA
Output Voltage Low (Pin 1) IOSL = 0.5 mA, Ee = 0.7 mW/m2, VOSL 250 mV
test signal see fig. 1
Irradiance (30 - 40 kHz) VS = 3 V Ee min 0.35 0.5 mW/m2
Pulse width tolerance:
tpi - 5/fo < tpo < tpi + 6/fo,
test signal see fig. 1
Irradiance (56 kHz) VS = 3 V Ee min 0.4 0.6 mW/m2
Pulse width tolerance:
tpi - 5/fo < tpo < tpi + 6/fo,
test signal see fig. 1
Irradiance (30 - 40 kHz) VS = 5 V Ee min 0.45 0.6 mW/m2
Pulse width tolerance:
tpi - 5/fo < tpo < tpi + 6/fo,
test signal see fig.1
Irradiance (56 kHz) VS = 5 V Ee min 0.5 0.7 mW/m2
Pulse width tolerance:
tpi - 5/fo < tpo < tpi + 6/fo,
test signal see fig. 1
Irradiance tpi - 5/fo < tpo < tpi + 6/fo, Ee max 30 W/m2
test signal see fig. 1
Directivity Angle of half transmission ϕ1/2 ± 45 deg
distance
Document Number 82217 www.vishay.com
Rev. 1.3, 19-Jan-07 75
TSOP312..
Vishay Semiconductors
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
1.0
Ee Optical Test Signal
(IR diode TSAL6200, IF = 0.4 A, 30 pulses, f = f0, T = 10 ms) 0.9
Ton ,Toff - Output Pulse Width (ms)
0.8
Ton
0.7
t 0.6
tpi * 0.5
Toff
T 0.4
* tpi 10/fo is recommended for optimal function
0.3
VO Output Signal 16110
0.2 = 950 nm,
1) 7/f0 < td < 15/f0 optical test signal, fig. 3
VOH 2)
0.1
tpi - 5/f 0 < tpo < tpi + 6/f 0
0.0
VOL 0.1 1 10 100 1000 10000
td1 ) tpo2 ) t
16909 Ee - Irradiance (mW/m²)
Figure 1. Output Function Figure 4. Output Pulse Diagram
1.0 1.2
Output Pulse
0.9
1.0
E e min /E e - Rel. Responsivity
t po - Output Pulse Width (ms)
0.8
0.7 Input Burst Duration
0.8
0.6
0.5 0.6
0.4
0.4
0.3
0.2 = 950 nm, 0.2 f = f0 ± 5 %
optical test signal, fig. 1 f (3 dB) = f0 /10
0.1
0.0 0.0
0.1 1 10 100 1000 10000 0.7 0.9 1.1 1.3
16908 Ee - Irradiance (mW/m²) 16925 f/f0 - Relative Frequency
Figure 2. Pulse Length and Sensitivity in Dark Ambient Figure 5. Frequency Dependence of Responsivity
Optical Test Signal
Ee 4.0
Ee min - Threshold Irradiance (mW/m2 )
Correlation with ambient light sources:
3.5
10 W/m2 1.4 klx (Std.illum.A, T= 2855 K)
3.0 10 W/m2 8.2 klx (Daylight, T = 5900 K)
t
600 µs 600 µs 2.5
T = 60 ms 2.0
94 8134 1.5
Output Signal, (see fig. 4) Ambient, = 950 nm
VO
1.0
VOH
0.5
VOL 0.0
Ton Toff t
0.01 0.1 1 10 100
16911 E - Ambient DC Irradiance (W/m 2)
Figure 3. Output Function Figure 6. Sensitivity in Bright Ambient
www.vishay.com Document Number 82217
76 Rev. 1.3, 19-Jan-07
TSOP312..
Vishay Semiconductors
2.0 0.6
Ee min- Threshold Irradiance (mW/m²)
Ee min - Threshold Irradiance (mW/m²)
0.5 Sensitivity in dark ambient
f = fo
1.5
f = 10 kHz 0.4
1.0 0.3
f = 1 kHz
0.2
0.5
0.1
f = 100 Hz
0.0 0.0
0.1 1 10 100 1000 - 30 - 15 0 15 30 45 60 75 90
16912 VsRMS - AC Voltage on DC Supply Voltage (mV) 16918 Tamb - Ambient Temperature (°C)
Figure 7. Sensitivity vs. Supply Voltage Disturbances Figure 10. Sensitivity vs. Ambient Temperature
1.2
S ( ) rel - Relative Spectral Sensitivity
E e min - Threshold Irradiance (mW/m²)
2.0
f(E) = f0 1.0
1.6
0.8
1.2
0.6
0.8 0.4
0.4 0.2
0.0 0
0.0 0.4 0.8 1.2 1.6 2.0 750 850 950 1050 1150
94 8147 E - Field Strength of Disturbance (kV/m) 94 8408 - Wavelength (nm)
Figure 8. Sensitivity vs. Electric Field Disturbances Figure 11. Relative Spectral Sensitivity vs. Wavelength
0° 10° 20°
0.8 30°
0.7
Max. Envelope Duty Cycle
0.6
40°
0.5 1.0
0.4 50°
0.9
0.3
0.8 60°
0.2 f = 38 kHz, Ee = 2 mW/m2 70°
0.7
0.1 80°
0.0
0 20 40 60 80 100 120 0.6 0.4 0.2 0 0.2 0.4 0.6
16913 Burst Length (number of cycles/burst) 95 11340p2 d rel - Relative Transmission Distance
Figure 9. Max. Envelope Duty Cycle vs. Burstlength Figure 12. Horizontal Directivity ϕx
Document Number 82217 www.vishay.com
Rev. 1.3, 19-Jan-07 77
TSOP312..
Vishay Semiconductors
0° 10° 20°
30° 1.0
0.9
E e min - Sensitivity (mW/m 2 )
0.8
40° 0.7
1.0 0.6
0.9 50° 0.5
0.4
0.8 60°
0.3
70° 0.2
0.7
80° 0.1
0.0
0.6 0.4 0.2 0 0.2 0.4 0.6 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
95 11339p2 d rel - Relative Transmission Distance 17185 VS - Supply Voltage (V)
Figure 13. Vertical Directivity ϕy Figure 14. Sensitivity vs. Supply Voltage
Suitable Data Format
The circuit of the TSOP312.. is designed so that unex- • Continuous signal at 38 kHz or at any other fre-
pected output pulses due to noise or disturbance sig- quency
nals are avoided. A bandpass filter, an integrator • Signals from fluorescent lamps with electronic bal-
stage and an automatic gain control are used to sup- last with high or low modulation
press such disturbances. (see Figure 15 or Figure 16).
The distinguishing mark between data signal and dis-
turbance signal are carrier frequency, burst length
and duty cycle.
The data signal should fulfill the following conditions:
IR Signal
• Carrier frequency should be close to center fre-
quency of the bandpass (e.g. 38 kHz).
• Burst length should be 10 cycles/burst or longer.
• After each burst which is between 10 cycles and 70 IR Signal from fluorescent
cycles a gap time of at least 14 cycles is necessary. lamp with low modulation
• For each burst which is longer than 1.8 ms a corre-
sponding gap time is necessary at some time in the 0 5 10 15 20
16920 Time (ms)
data stream. This gap time should be at least 4 times
longer than the burst. Figure 15. IR Signal from Fluorescent Lamp with low Modulation
• Up to 800 short bursts per second can be received
continuously. IR Signal from fluorescent
Some examples for suitable data format are: NEC lamp with high modulation
Code (repetitive pulse), NEC Code (repetitive data),
Toshiba Micom Format, Sharp Code, RC5 Code,
IR Signal
RC6 Code, R-2000 Code, Sony Code.
When a disturbance signal is applied to the
TSOP312.. it can still receive the data signal. How-
ever the sensitivity is reduced to that level that no
unexpected pulses will occur.
Some examples for such disturbance signals which
0 10 10 15 20
are suppressed by the TSOP312.. are:
16921 Time (ms)
• DC light (e.g. from tungsten bulb or sunlight) Figure 16. IR Signal from Fluorescent Lamp with high Modulation
www.vishay.com Document Number 82217
78 Rev. 1.3, 19-Jan-07
TSOP312..
Vishay Semiconductors
Package Dimensions in millimeters
96 12116
Document Number 82217 www.vishay.com
Rev. 1.3, 19-Jan-07 79
TSOP312..
Vishay Semiconductors
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earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
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respectively
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substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
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damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
www.vishay.com Document Number 82217
80 Rev. 1.3, 19-Jan-07
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Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
