2STW4468

High power NPN epitaxial planar bipolar transistor

General features
■ High breakdown voltage VCEO=140V
■ Complementary to 2STW1695
■ Fast-switching speed
■ Typical ft =20MHz

■ Fully characterized at 125 oC

■ In compliance with the 2002/93/EC European 2
3

Directive 1

TO-247
Applications
■ Audio power amplifier
Internal schematic diagram
Description
The device is a NPN transistor manufactured
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
Recommended for 70W to 100W high fidelity
audio frequency amplifier output stage.

Order codes

Part Number Marking Package Packing

2STW4468 2STW4468 TO-247 Tube

February 2007 Rev 3 1/9

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 2STW4468

Electrical ratings
Table 1. Absolute maximum rating
Symbol Parameter Value Unit
VCBO Collector-emitter voltage (IE = 0) 200 V
VCEO Collector-emitter voltage (IB = 0) 140 V
VEBO Collector-base voltage (IC = 0) 6 V
IC Collector current 10 A
ICM Collector peak current (tP < 5ms) 20 A
PTOT Total dissipation at Tc = 25°C 100 W
Tstg Storage temperature -65 to 150 °C
TJ Max. operating junction temperature 150 °C

Table 2. Thermal data

Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case ______________ __max 1.25 °C/W

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2STW4468 Electrical characteristics

1 Electrical characteristics

(TCASE = 25°C; unless otherwise specified)

Table 3. Electrical characteristics

Symbol Parameter Test Conditions Min. Typ. Max. Unit
Collector cut-off current
ICBO VCB = 200V 0.1 µA
(IE = 0)
Emitter cut-off current
IEBO VEB = 6V 0.1 µA
(IC = 0)
Collector-emitter breakdown
V(BR)CEO(1) voltage (I = 0) IC = 50mA 140 V
B

Collector-emitter breakdown
V(BR)CBO IC = 100µA 200 V
voltage (IE = 0)
Collector-emitter breakdown
V(BR)EBO(1) voltage (I = 0) IE = 1mA 6 V
C

Collector-emitter saturation IC = 5A IB = 500mA 0.5 V

VCE(sat) (1)
voltage IC = 7A IB = 700mA 0.7 V
VBE Base-emitter voltage VCE = 5V IC = 5A 1.3 V
IC = 3A VCE = 4V 70 140
hFE DC current gain
IC = 5A VCE = 4V 50
fT Transition frequency IC = 0.5A VCE = 12V 20 MHz
CCBO Collector-base capacitance IE = 0 VCB = 10V f = 1MHz 150 pF
Resistive Load
ton Turn-on time IC = 5A VCC = 60V 0.22 µs
tstg Storage time IB1 = -IB2 = 0.5A 4.3 µs
toff Fall time 0.5 µs

Note: 1 Pulsed duration = 300 µs, duty cycle ≤1.5%

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Electrical characteristics 2STW4468

1.1 Electrical characteristics (curves)

Figure 1. Safe operating area Figure 2. Output characteristics

Figure 3. DC current gain Figure 4. Collector-emitter saturation

voltage

Figure 5. Base-emitter on voltage Figure 6. Collector current vs base-

emitter voltage

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2STW4468 Electrical characteristics

1.2 Test circuit

Figure 7. Resistive load switching test circuit

1) Fast electronic switch

2) Non-inductive resistor

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Package mechanical data 2STW4468

2 Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK®

packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in compliance
with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also
marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are
available at: www.st.com

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2STW4468 Package mechanical data

TO-247 MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.

A 4.7 5.3 0.185 0.209

D 2.2 2.6 0.087 0.102

E 0.4 0.8 0.016 0.031

F 1 1.4 0.039 0.055

F3 2 2.4 0.079 0.094

F4 3 3.4 0.118 0.134

G 10.9 0.429

H 15.3 15.9 0.602 0.626

L 19.7 20.3 0.776 0.779

L3 14.2 14.8 0.559 0.582

L4 34.6 1.362

L5 5.5 0.217

M 2 3 0.079 0.118

P025P

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Revision history 2STW4468

3 Revision history

Table 4. Revision history

Date Revision Changes

23-Oct-2006 1 First release

09-Feb-2007 2 New graphics.
New graphics The device’s commercial code has been changed from
20-Feb-2007 3
preliminary to full.

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2STW4468

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