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PNP Silicon - Eneral Purpose Application

The document provides specifications for a PNP silicon transistor, including maximum ratings such as collector-emitter voltage of -30V and collector current of -500mA. It also details electrical characteristics like common emitter DC current gain ranging from 70 to 240 and breakdown voltages. Additionally, it includes classifications for hFE values.

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18 views1 page

PNP Silicon - Eneral Purpose Application

The document provides specifications for a PNP silicon transistor, including maximum ratings such as collector-emitter voltage of -30V and collector current of -500mA. It also details electrical characteristics like common emitter DC current gain ranging from 70 to 240 and breakdown voltages. Additionally, it includes classifications for hFE values.

Uploaded by

Ghassan
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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A1270

—PNP silicon —
■■APPLICATION：GENERAL PURPOSE APPLICATION.

■■MAXIMUM RATINGS（Ta＝25℃）
PARAMETER SYMBOL RATING UNIT

Collector-base voltage VCBO -35 V

Collector-emitter voltage VCEO -30 V

Emitter-base voltage VEBO -5 V

Collector current IC -500 mA

Collector Power Dissipation PC 625 mW

Junction Temperature TJ 150 ℃

Storage Temperature Range Tstg ﹣55~150 ℃

■■ELECTRICAL CHARACTERISTICS（Ta=25℃）
PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITION

Common Emitter DC Current Gain hFE 70 240 VCE= -1V，Ic= -100mA

Collector Cut-off Current ICBO -0.1 µA VCB= -35V，IE=0

Emitter Cut-off Current IEBO -0.1 µA VEB= -5V，Ic=0

Collector-Base Breakdown Voltage BVCBO -35 V Ic= -0.1mA，IE=0

Collector-Emitter Breakdown Voltage BVCEO -30 V Ic= -1mA，IB=0

Emitter-Base Breakdown Voltage BVEBO -5 V IE=-0.1 mA，Ic=0

Base-Emitter Voltage VBE -0.8 -1 V VCE= -1V，Ic= -100mA

Collector-Emitter Saturation Voltage VCE(sat) -0.1 -0.25 V Ic= -100mA，IB= -10mA

Gain bandwidth product fT 200 MHz Ic= -20mA，VCE= -6V

Common Base Output Capacitance Cob 13 PF VCB= -6V, IE=0, f = 1MHz

■■hFE Classification
Classification O Y
hFE 70～140 120～240

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