R5520H SERIES

USB HIGH-SIDE POWER SWITCH

NO.EA-091-130827

OUTLINE
The R5520H is CMOS-based high-side MOSFET switch IC for Universal Serial Bus (USB) applications. Low
ON Resistance (Typ.100mΩ) and low supply current (Typ.20μA at active mode) are realized in this IC.
An over-current limit circuit, thermal shutdown circuit, and an under voltage lockout circuit are built-in as
protection circuits. Further, a delay circuit for flag signal after detecting over-current, is embedded to prevent
miss-operation of error flag because of inrush current. The R5520H is ideal for applications of protection for USB
power supply.

FEATURES
• Built-in P-channel MOSFET Switch
• Supply Current ............................................................Typ. 20μA (at Active Mode)
• Switch ON Resistance ...............................................Typ. 100mΩ
• Output Current.............................................................Min. 500mA
• Flag Delay Time ..........................................................Typ. 10ms.
• Over- Current Limit / Short Circuit Protection
• Built-in Under Voltage Lockout (UVLO) Function
• Built-in Thermal Shutdown Protection
• Built-in Soft-start Function
• Package .......................................................................SOT-89-5

APPLICATIONS
• USB Peripherals
• Notebook PCs

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 R5520H
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BLOCK DIAGRAMS
R5520H001A/B

IN OUT

GATE CURRENT
EN
CONTROL LIMIT

FLAG
FLG
DELAY

UVLO

THERMAL
SHUTDOWN

GND

SELECTION GUIDE
The logic of the enable pin for the ICs can be selected at the user’s request.

Product Name Package Quantity per Reel Pb Free Halogen Free

R5520H001∗-T1-FE SOT-89-5 1,000 pcs Yes Yes
∗ : Designation of the logic of the enable pin.
(A) "L" active
(B) "H" active

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PIN DESCRIPTIONS
• SOT-89-5
5 4

1 2 3

Pin No Symbol Pin Description

1 EN Enable Pin
2 GND Ground Pin
3 FLG FLG pin (Open Drain Output)
4 IN Power Supply Pin
5 OUT Output Pin

ABSOLUTE MAXIMUM RATINGS

Symbol Item Rating Unit
VIN Input Voltage 6.0 V
VEN Enable Pin Input Voltage −0.3 to VIN+0.3 V
VFLG Flag Voltage −0.3 to 6.0 V
IFLG Flag Current 14 mA
VOUT Output Voltage −0.3 to VIN+0.3 V
IOUT Output Current Internal Limited
PD Power Dissipation*1 (SOT-89-5) 900 mW
Ta Operating Temperature Range −40 to 85 °C
Tstg Storage Temperature Range −55 to 125 °C
*1
For Power Dissipation, please refer to PACKAGE INFORMATION.

ABSOLUTE MAXIMUM RATINGS

Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause the permanent
damages and may degrade the life time and safety for both device and system using the device in the field.
The functional operation at or over these absolute maximum ratings is not assured.

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ELECTRICAL CHARACTERISTICS
• R5520H001A/B
Ta=25°C
Symbol Item Conditions Min. Typ. Max. Unit
VIN Input Voltage 4.0 5.5 V
IDD1 Supply Current 1 Active *1, OUT=open 20 60 μA
IDD2 Supply Current 2 *2
OFF , OUT=open 0.5 5.0 μA
VIN=5V, IOUT=500mA 100 140 mΩ
RON Switch On Resistance
VIN=4V, IOUT=500mA 110 150 mΩ
tON Output Turn-on Delay RL=10Ω 2 12 ms
tOFF Output Turn-off Delay RL=10Ω 5 20 μs
VIN=increasing 2.1 2.4 2.7 V
VUVLO UVLO Threshold
VIN=decreasing 2.2 V
ITH Current Limit Threshold Ramped Load 1.2 2.0 A
ILIM Short Current Limit VOUT=0V 0.50 0.75 1.00 A
tFD Over Current Flag Delay From Over Current to FLG="L" 5 10 20 ms

Thermal Shutdown Tj=increasing 135

TTS °C
Temperature Threshold Tj=decreasing 125
IEN Enable Pin Input Current 0.01 1.00 μA
VEN1 Enable Pin Input Voltage 1 VEN=increasing 2.4 V

VEN2 Enable Pin Input Voltage 2 VEN=decreasing 0.8 V

ILO Output Leakage Current 1 10 μA
VLF Flag "L" Output Voltage ISINK=1mA 0.4 V
IFOF Flag Off Current VFLAG=5.5V 0.05 2.00 μA
*1
EN=L (R5520H001A), EN=H (R5520H001B)
*2
EN=H (R5520H001A), EN=L (R5520H001B)

RECOMMENDED OPERATING CONDITIONS (ELECTRICAL CHARACTERISTICS)

All of electronic equipment should be designed that the mounted semiconductor devices operate within the
recommended operating conditions. The semiconductor devices cannot operate normally over the recommended
operating conditions, even if when they are used over such conditions by momentary electronic noise or surge. And the
semiconductor devices may receive serious damage when they continue to operate over the recommended operating
conditions.

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OPERATION
This explanation is based on the typical application.

⋅ (1) There is a parasitic diode between source and drain of the switch transistor. (Refer to the block diagram.)
Because of this, in both cases of enable and disable, if the voltage of OUT pin is higher than IN pin, current
flows from OUT to IN.

⋅ (2) In case that OUT pin and GND is short, if over-current would continue, the temperature of the IC would
increase drastically. If the temperature of the IC is beyond 135°C, the switch transistor turns off and the FLG
pin level becomes "L". Then, when the temperature of the IC decreases equal or lower than 125°C, the
switch transistor turns on and FLG becomes "H". Unless the abnormal situation of OUT pin is removed, the
switch transistor repeats on and off.
Refer to the 21) over-current protection operation in the typical characteristics.

⋅ (3) Over-current level is set internally in the IC. There are three types of response against over-current:
cUnder the condition that OUT pin is short or large capacity is loaded, if the IC is enabled, the IC becomes
constant current state. After the flag delay time passes, FLG becomes "L", that means over current state.
Refer to the 20) current limit transient response of typical characteristics.
dWhile the switch transistor is on, if OUT pin is short or large capacity is loaded, until the current limit circuit
responds, large transient current flows. After the transient current is beyond the over-current de-tector
threshold and delay time of the flag passes, FLG becomes "L", that means over current state.
Refer to the 22), 23) over-current limit transient response of typical characteristics.
eIn the case that load current gradually increases, the IC is not into the constant current state until the
current is beyond over current limit. Once the level is beyond the over current detector threshold, load
current is limited into over current limit level. Note that load current continuously flows until the load current
is beyond the over-current detector threshold.

⋅ (4) FLG pin is Nch Open drain output. If the over-current or over-temperature is detected, FLG becomes "L". If
over-current is detected, FLG becomes "L" after the flag delay time tFD passes. Therefore flag signal is not
out with inrush current.

⋅ (5) UVLO circuit prevents that the switch transistor turns on until the input voltage is beyond 2.4V. UVLO circuit
can operate when the IC is enabled.

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TEST CIRCUIT
IOUT
1 EN OUT 5 1 EN OUT 5

VEN 2 GND VEN 2 GND V VON

3 FLG IN 4 A 3 FLG IN 4

VIN VIN
0.1μF 0.1μF

Supply Current Test Circuit Switch On Resistance Test Circuit

VOUT IOUT
1 EN OUT 5 1 EN OUT 5 A
10Ω

VEN 2 GND VEN 2 GND

3 FLG IN 4 3 FLG IN 4

VIN VIN
0.1μF 0.1μF

Output On Time Test Circuit Over-current Limit Test Circuit

IOUT 100kΩ
1 EN OUT 5 1 EN OUT 5

VEN VEN VOUT

2 GND 2 GND

3 FLG IN 4 3 FLG IN 4

VIN VIN
0.1μF 0.1μF

Over-current Threshold Test Circuit Enable Input Voltage Test Circuit

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 R5520H
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IOUT
1 EN OUT 5 1 EN OUT 5

VEN 2 GND VEN 2 GND V VON

3 FLG IN 4 A 3 FLG IN 4

VIN VIN
0.1μF 0.1μF

Flag Output Delay Time Test Circuit UVLO Threshold Test Circuit

TYPICAL APPLICATION
VIN
+4V to +5.5V

10k to 100k

VEN VOUT
EN OUT

GND

VFLG FLG IN

R5520H 0.1μF

R5520H001A/B

TECHNICAL NOTES
⋅ Put a capacitance range from 0.1μF to 1μF bypass capacitor between IN pin and GND pin of the IC. Without a
bypass capacitor, in case of output short, because of the high side inductance of IN pin, ringing may be
generated and it might be a cause of an unstable operation.

⋅ Recommended pull-up resistance value range of flag pin is from 10kΩ to 100kΩ.

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TIMING CHART
• R5520H001A

VEN 50% 50%

tOFF

tON
90%
VOUT
10% Output On Time/Output Off Time

tFD

VEN 50%

VFLG
10% FLG Output Delay Time

• R5520H001B

VEN 50% 50%

tOFF
tON
90%
VOUT
10% Output On Time/Output Off Time

VEN 50%

tFD

VFLG
10% FLG Output Delay Time

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PACKAGE INFORMATION
POWER DISSIPATION (SOT-89-5)
Power Dissipation (PD) depends on conditions of mounting on board. This specification is based on the
measurement at the condition below:

Measurement Conditions
High Wattage Land Pattern Standard Land Pattern
Environment Mounting on Board (Wind velocity=0m/s) Mounting on Board (Wind velocity=0m/s)
Board Material Glass cloth epoxy plastic (Double sided) Glass cloth epoxy plastic (Double sided)
Board Dimensions 30mm × 30mm × 1.6mm 50mm × 50mm × 1.6mm
Top side : Approx. 20% , Top side : Approx. 10% ,
Copper Ratio
Back side : Approx. 100% Back side : Approx. 100%
Through-hole φ0.85mm × 10pcs -

Measurement Result (Ta=25°C, Tjmax=125°C)

High Wattage Land Pattern Standard Land Pattern Free Air
Power Dissipation 1300mW 900mW 500mW
Thermal Resistance 77°C/W 111°C/W 200°C/W

1500
1400 On Board
30
1300 (High Wattage Land Pattern)
7.5 15 50
1200
Power Dissipation PD (mW)

1100 On Board
1000 (Standard Land Pattern)
900
800
30

15

50

700 Free Air

600
500
7.5

400
300
200 High Wattage Standard
100
0
0 25 50 75 85 100 125 150 Measurement Board Pattern
Ambient Temperature (°C)
IC Mount Area (Unit : mm)
Power Dissipation

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PACKAGE DIMENSIONS (SOT-89-5)

4.5±0.1 1.5±0.1
1.6±0.2

0.4±0.3
0.4±0.1
0.42±0.1

0.3±0.2
5 4 4 5

4.35±0.1
2.5±0.1
1.00±0.2

φ1.0

0.3±0.2
0.1 S
1 2 3 3 2 1

0.4±0.1
Bottom View

0.42±0.1 0.42±0.1
0.47±0.1

1.5±0.1 1.5±0.1 Unit : mm

MARK SPECIFICATION (SOT-89-5)

cdef: Product Code …

cde Refer to MARK SPECIFICATION TABLE (SOT-89-5)
gh: Lot Number … Alphanumeric Serial Number

fgh

MARK SPECIFICATION TABLE (SOT-89-5)

Product Name cdef
R5520H001A F01A
R5520H001B F01B

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TYPICAL CHARACTERISTICS
1) Supply Current vs. Temperature 2) Supply Current vs. Input Voltage
25 25

85°C
Supply Current IDD1(μA)

Supply Current IDD1(μA)

20 VIN=5.5V 20
25°C
15 VIN=4V 15

-40°C
10 10

5 5

0 0
-40 -20 0 20 40 60 80 100 2.5 3 3.5 4 4.5 5 5.5 6
Temperature Topt(°C) Input Voltage VIN(V)

3) On Resistance vs. Temperature 4) On Resistance vs. Input Voltage

IOUT=500mA IOUT=500mA
180 180

160 160
On Resistance RON(mΩ)

On Resistance RON(mΩ)

140 140
85°C
120 VIN=4V 120
25°C
100 100
VIN=5V
80 80
-40°C
60 60

40 40
-40 -20 0 20 40 60 80 100 2.5 3 3.5 4 4.5 5 5.5 6
Temperature Topt(°C) Input Voltage VIN(V)

5) Output On Time vs. Temperature 6) Output On Time vs. Input Voltage

3.5 3.5
-40°C
Output On Time tON(ms)

Output On Time tON(ms)

3.0 3.0
VIN=5.5V 25°C
2.5 2.5
VIN=4V
2.0 2.0 85°C

1.5 1.5

1.0 1.0
-40 -20 0 20 40 60 80 100 2.5 3 3.5 4 4.5 5 5.5 6
Temperature Topt(°C) Input Voltage VIN(V)

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7) Over-current limit vs. Temperature 8) Over-current limit vs. Input Voltage
900 900
-40°C
Over-Current Limit ILIM(mA)

Over-Current Limit ILIM(mA)

850 850
800 800
VIN=5.5V 25°C
750 750

700 VIN=4V 700

85°C
650 650
600 600

550 550
500 500
-40 -20 0 20 40 60 80 100 2.5 3 3.5 4 4.5 5 5.5 6
Temperature Topt(°C) Input Voltage VIN(V)

9) Over-current Detector Threshold vs. Temperature 10) Over-current Detector Threshold vs. Input
Voltage
Over-current Detector Threshold ITH(mA)
Over-current Detector Threshold ITH(mA)

1800 1800
1600
1600
1400 VIN=5.5V
-40°C
1200 1400
25°C
1000 VIN=4V
1200
800
85°C
600 1000
400
800
200
0 600
-40 -20 0 20 40 60 80 100 2.5 3 3.5 4 4.5 5 5.5 6
Temperature Topt(°C) Input Voltage VIN(V)

11) Enable Input Voltage vs. Temperature 12) Enable Input Voltage vs. Input Voltage
VIN=5V Topt=25°C
Enable Input Voltage VEN1/VEN2(V)

Enable Input Voltage VEN1/VEN2(V)

2.4 2.4

2.2 2.2

2.0 2.0 VEN1

VEN1
1.8 1.8
VEN2 VEN2
1.6 1.6

1.4 1.4

1.2 1.2

1.0 1.0
-40 -20 0 20 40 60 80 100 2.5 3 3.5 4 4.5 5 5.5 6
Temperature Topt(°C) Input Voltage VIN(V)

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 R5520H
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13) Flag Output Delay Time vs. Temperature 14) Flag Output Delay Time vs. Input Voltage
20 20
Flag Output Delay Time tFD(ms)

Flag Output Delay Time tFD(ms)

18 18
16 16
-40°C
14 14

12 VIN=4V 12 25°C

10 VIN=5.5V 10
8 85°C
8
6 6
4 4
-40 -20 0 20 40 60 80 100 2.5 3 3.5 4 4.5 5 5.5 6
Temperature Topt(°C) Input Voltag VIN(V)

15) UVLO Threshold vs. Temperature

2.7
UVLO Detector Threshol VUVLO(V)

2.6
2.5 VIN increasing
2.4
2.3
2.2
VIN decreasing
2.1
2.0
1.9
-40 -20 0 20 40 60 80 100
Temperature Topt(°C)

16) UVLO at VIN increasing

VEN=0V, CL=57μF, RL=35Ω

VIN
(1V/div)
VFLG
(1V/div)
VOUT
(2V/div)

IOUT
(100mA/div)

Time(5ms/div)

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 R5520H
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17) Turn-on response
VIN=5V, CL=147μF, RL=35Ω

VEN
(10V/div)

VFLG
(5V/div) 704mA
VOUT
(5V/div)

IOUT
(200mA/div)
Time(1ms/div)

18) Turn off Response

VIN=5V, CL=147μF, RL=35Ω

VEN
(10V/div)

VFLG
(5V/div)
VOUT
(5V/div)

IOUT
(200mA/div)
Time(2ms/div)

19) Inrush current

VIN=5V, RL=35Ω

VEN
(10V/div)

VFLG
(5V/div) CL=310μF
CL=210μF
CL=110μF
CL=10μF

IOUT
(200mA/div)
Time(1ms/div)

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 R5520H
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20) Current Limit Transient Response
(Case: Enable to Short)
VIN=5V

VEN
(10V/div)

11.6ms(tFD)

VFLG
(5V/div)

IOUT
(500mA/div)
Time(2ms/div)

21) Thermal Shutdown

VIN=5V, CL=47μF

VFLG
(5V/div)

VOUT
(5V/div)

IOUT
(500mA/div)
Time(100ms/div)

22) Current Limit Transient Response

(Case: Output short during enable)
VIN=5V, CL=47μF

VFLG
(5V/div)
VOUT
(5V/div)

IOUT
(5A/div)
Time(2ms/div)

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 R5520H
NO.EA-091-130827
23) Zoomed in 22)
VIN=5V, CL=47μF

VOUT
(5V/div)

IOUT
(5A/div)

Time(10μs/div)

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Official website
https://www.nisshinbo-microdevices.co.jp/en/
Purchase information
https://www.nisshinbo-microdevices.co.jp/en/buy/