Scribd
Upload
12 views4 pages

Semiconductor 2N3904: Technical Data

The 2N3904 is an epitaxial planar NPN transistor designed for general-purpose and switching applications, featuring low leakage current and low saturation voltage. It has a maximum collector current rating of 200 mA and can operate at junction temperatures up to 150°C. Key electrical characteristics include a DC current gain ranging from 30 to 300 and a collector-emitter saturation voltage of 0.3V at 50mA.

Uploaded by

rjrn43
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
12 views4 pages

Semiconductor 2N3904: Technical Data

The 2N3904 is an epitaxial planar NPN transistor designed for general-purpose and switching applications, featuring low leakage current and low saturation voltage. It has a maximum collector current rating of 200 mA and can operate at junction temperatures up to 150°C. Key electrical characteristics include a DC current gain ranging from 30 to 300 and a collector-emitter saturation voltage of 0.3V at 50mA.

Uploaded by

rjrn43
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 4

SEMICONDUCTOR 2N3904

TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR

GENERAL PURPOSE APPLICATION.


SWITCHING APPLICATION.

FEATURES
Low Leakage Current
: ICEX=50nA(Max.), IBL=50nA(Max.)
@VCE=30V, VEB=3V.
Excellent DC Current Gain Linearity.
Low Saturation Voltage
: VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA.
Low Collector Output Capacitance
: Cob=4pF(Max.) @VCB=5V.
Complementary to 2N3906.

MAXIMUM RATING (Ta=25 )


CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6 V
Collector Current IC 200 mA
Base Current IB 50 mA
625
Ta=25 mW
Collector Power 400
*PC
Dissipation 1.5
Tc=25 W
1.0
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150

*Cu Lead-Frame : 625mW(@Ta=25 )


1.5W(@Tc=25 )
Fe Lead-Frame : 400mW(@Ta=25 )
1.0W(@Tc=25 )

2013. 7. 08 Revision No : 2 1/4


2N3904

ELECTRICAL CHARACTERISTICS (Ta=25 )


CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICEX VCE=30V, VEB=3V - - 50 nA
Base Cut-off Current IBL VCE=30V, VEB=3V - - 50 nA
Collector-Base Breakdown Voltage V(BR)CBO IC=10 A, IE=0 60 - - V
Collector-Emitter Breakdown Voltage * V(BR)CEO IC=1mA, IB=0 40 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=10 A, IC=0 6.0 - - V
hFE(1) VCE=1V, IC=0.1mA 40 - -
hFE(2) VCE=1V, IC=1mA 70 - -
DC Current Gain * hFE(3) VCE=1V, IC=10mA 100 - 300
hFE(4) VCE=1V, IC=50mA 60 - -
hFE(5) VCE=1V, IC=100mA 30 - -
VCE(sat)1 IC=10mA, IB=1mA - - 0.2
Collector-Emitter Saturation Voltage * V
VCE(sat)2 IC=50mA, IB=5mA - - 0.3
VBE(sat)1 IC=10mA, IB=1mA 0.65 - 0.85
Base-Emitter Saturation Voltage * V
VBE(sat)2 IC=50mA, IB=5mA - - 0.95
Transition Frequency fT VCE=20V, IC=10mA, f=100MHz 300 - - MHz
Collector Output Capacitance Cob VCB=5V, IE=0, f=1MHz - - 4.0 pF
Input Capacitance Cib VBE=0.5V, IC=0, f=1MHz - - 8.0 pF
Input Impedance hie 1.0 - 10 k
Voltage Feedback Ratio hre 0.5 - 8.0 x10-4
VCE=10V, IC=1mA, f=1kHz
Small-Signal Current Gain hfe 100 - 400
Collector Output Admittance hoe 1.0 - 40
VCE=5V, IC=0.1mA Rg=1k ,
Noise Figure NF - - 5.0 dB
f=10Hz 15.7kHz

Delay Time td - - 35

Rise Time tr - - 35

Switching Time nS

Storage Time tstg - - 200

Fall Time tf - - 50

* Pulse Test : Pulse Width 300 S, Duty Cycle 2%.

2013. 7. 08 Revision No : 2 2/4


2N3904

2013. 7. 08 Revision No : 2 3/4


2N3904

2013. 7. 08 Revision No : 2 4/4

You might also like