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CMOS Fabrication Steps

The CMOS fabrication process begins with a P-type substrate and involves several key steps including the growth of a thin oxide layer, deposition of photoresist, and photolithography for masking and etching. Subsequent steps include N-well formation, gate oxide formation, polysilicon gate deposition, source and drain diffusion, and metallization. The process culminates in a final cross-sectional view showcasing the top metal contact, poly gate, and source/drain regions.

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0% found this document useful (0 votes)

8 views2 pages

CMOS Fabrication Steps

Uploaded by

shivshaktinagarangolbelgaum

We take content rights seriously. If you suspect this is your content, claim it here.

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Download as PDF, TXT or read online on Scribd

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CMOS Fabrication Process - Easy Explanation

1. Start with P-type Substrate

---------------------
| P-type Silicon |
---------------------

2. Grow a Thin Oxide Layer

---------------------
| SiO2 Layer |
---------------------
| P-type Silicon |
---------------------

3. Deposit Photoresist

=== Photoresist ===

---------------------
| SiO2 Layer |
---------------------
| P-type Silicon |
---------------------

4. Photolithography (Masking and Etching)

[Removed Areas Here]

---------------------
| SiO2 Layer |
---------------------
| P-type Silicon |
---------------------

5. N-Well Formation

---------------------
| SiO2 |
---------------------
| N-Well |
| (inside P-type) |
---------------------

6. Gate Oxide Formation

[SiO2 for gate area]

---------------------
| N-Well + P-Sub |
---------------------
CMOS Fabrication Process - Easy Explanation

7. Polysilicon Gate Deposition

=== Polysilicon Gate ===

-------------------------
| Gate Oxide Layer |
-------------------------
| N-Well | P-Substrate |
-------------------------

8. Source and Drain Diffusion

S G D S G D
p+ Poly p+ n+ Poly n+
----------------------------
| N-Well | P-Substrate |
----------------------------

9. Metallization

Metal Lines (Interconnects)

===========================
S G D S G D
p+ Poly p+ n+ Poly n+
----------------------------
| N-Well | P-Substrate |
----------------------------

10. Final View (Cross-section)

Top Metal Contact

|| ||
===||======||=== <- Poly Gate
|| ||
p+ n+ <- Source/Drain
| |
[N-Well] [P-Substrate]

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CMOS Fabrication Steps

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CMOS Fabrication Steps

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CMOS Fabrication Process - Easy Explanation

1. Start with P-type Substrate

2. Grow a Thin Oxide Layer

=== Photoresist ===

4. Photolithography (Masking and Etching)

[Removed Areas Here]

6. Gate Oxide Formation

[SiO2 for gate area]

7. Polysilicon Gate Deposition

=== Polysilicon Gate ===

8. Source and Drain Diffusion

Metal Lines (Interconnects)

10. Final View (Cross-section)

Top Metal Contact

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