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Correction CC Electronique

The document outlines a test correction for a 2nd-year electronics course, detailing various questions related to PN junctions, atomic structure, and circuit analysis. It includes multiple-choice questions and exercises focused on concepts such as forward and reverse bias, ionization, and logic gates. Additionally, it features calculations related to Thevenin and Norton equivalents, as well as circuit descriptions and outputs for specific configurations.

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kagumi343hana
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0% found this document useful (0 votes)
5 views3 pages

Correction CC Electronique

The document outlines a test correction for a 2nd-year electronics course, detailing various questions related to PN junctions, atomic structure, and circuit analysis. It includes multiple-choice questions and exercises focused on concepts such as forward and reverse bias, ionization, and logic gates. Additionally, it features calculations related to Thevenin and Norton equivalents, as well as circuit descriptions and outputs for specific configurations.

Uploaded by

kagumi343hana
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Department Of Preparatory Cycles

2024-2025

2nd Year

Date 24/01/2025
Duration : 1h / Teacher : Nabila Nouar

Q7 : The effect of forward bias on the depletion


region of a PN junction is that it makes it : ( 0.5 pts )
Test correction • Wider
• More narrow
Electronics
Q8 : Reverse bias of a junction is the condition that (
0.25 pts )
QCM : Choose the correct answer(s) • Allows current in the PN junction
• Prevents current in the PN junction
Q1 : Bohr Model is more accurate than Quantum
model for the Atomic structure description ( 1 pts)
Q9: The following figure refers to the equivalent
• Yes circuit of : ( 0.25 pts )
• No

Q2 : The maximum number of electrons in the third


shell of an atom contains : ( 1 pts )

• 16 electrons
• 18 electrons
• 6 electrons
• 1 electron

Q3 : Ionization refers to : ( 1 pts ) • An ideal


diode in forward region
• Loss of electrons
• An ideal diode in reverse region
• Gain of electrons
• A practical diode in reverse region
• Both
• A complete diode in reverse region
• None
• A complete diode in forward region
Q4 : Conductors have : ( 0.5 pts )

• More electrons in the valence band than Q10 : What is the correct order of elements in a DC
insulators do power supply : ( 0.25 pts )
• Less electrons in the valence band than
• Transformer/rectifier/filter/regulator
insulators do
• Transformer/regulator/filter/rectifier
• Transformer/filter/rectifier/regulator
Q5: Conduction and valence bands are overlapped in • None
: ( 0.5 pts )

• Conductors Q11 : The transformer has a turns ratio that equals to


• Semiconductors ( 0.25 pts )
• insulators 𝑁𝑝𝑟𝑖 𝑉 𝐼
• 𝑁𝑠𝑒𝑐
= 𝑉𝑠𝑒𝑐 = 𝐼𝑠𝑒𝑐
𝑝𝑟𝑖 𝑝𝑟𝑖
Q6 : Adding impurities to modify conductivity of a 𝑁𝑠𝑒𝑐 𝑉𝑠𝑒𝑐 𝐼𝑠𝑒𝑐
material is : ( 0.5 pts ) • = =
𝑁𝑝𝑟𝑖 𝑉𝑝𝑟𝑖 𝐼𝑝𝑟𝑖
𝑁𝑠𝑒𝑐 𝑉𝑠𝑒𝑐 𝐼𝑝𝑟𝑖
• Ionization • 𝑁𝑝𝑟𝑖
=𝑉 =𝐼
𝑝𝑟𝑖 𝑠𝑒𝑐
• Doping • 𝑁𝑜𝑛𝑒

Q12 : which of these are isolation transformers


( 0.25 pts + 0.25 pts):
• 1:2
• 1:1
• 2:1
• 2:2
• 1:3

Q13 : An AND logic gate that is build up with diodes


has an output of ‘1’ ( 0.25 pts )

• If one diode is conducting at least. We have : Eth = 6Ri ; so the Mesh is :


• If all diodes are conducting
6𝑅𝑖 = (𝑒 − 𝑒0 ) − 3𝑅𝑖.
e-RI0
Q14 : An OR logic gate that is build up with diodes So : i = then
9R
will display in the output ‘0’ if ( 0.25 pts )
2
Eth = 3 (𝑒 − RI0 ) (0.5 pts)
• If one diode is blocked at least
• If all diodes are blocked

Exercise 1 : (7 pts)
(0.5 pts)

Eth
I= (0.5 pts)
R th + R 0

Thevenin :
2 𝑒 − RI0
I= (1pts)
3 2R + R0

Norton :

R th = R AB = 3R//6R = 2R (1.5 pts)

R th = R N = 2R (0.5 pts)

2
Department Of Preparatory Cycles

2024-2025

2nd Year

The Mesh gives :

3ηR+R𝐼0 = 𝑒 , which leads to


:

e-RI0
𝜂= (0.5 pts) -Vbias+0.7 = -3.5+0.7=-2.8V (0.25 pts)
3R

• Germanium made diode

Same plot (0.25 pts) but

-Vbias+0.3 = -3.5+0.3=-3.2 V (0.25 pts)


(0.5 pts)

Q2. We consider the following circuit :

RN
𝐼=R 𝜂 ( 0.5 pts)
N +R0

2R e-RI0
= *
2R + R 0 3R

2 e-RI0
I= (1 pts)
3 2R + R 0
1. The name and purpose of the circuit : Center
tapped full wave rectifier (2 pts)
2. ( 0.5 pts + 0.5 pts)
Exercise 2 : (6 pts)

Q1.

1. This circuit is a negative limiter (2 pts)


2. Plot the output voltage if we consider that
the diode is practical and that 𝑉𝐵𝑖𝑎𝑠 = 3.5𝑉
for

• Silicon made diode (0.25 pts)

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