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Electronics

The document outlines the 1st semester syllabus for the B.Tech in Electronics and Communication Engineering program for the batch of 2025-2029 at the University of Engineering and Management. It includes course objectives, outcomes, a detailed syllabus, and references for subjects such as Basic Electronics Engineering and Digital Logic Design. The syllabus emphasizes key topics like semiconductor physics, diodes, transistors, operational amplifiers, and digital logic gates.
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0% found this document useful (0 votes)
30 views10 pages

Electronics

The document outlines the 1st semester syllabus for the B.Tech in Electronics and Communication Engineering program for the batch of 2025-2029 at the University of Engineering and Management. It includes course objectives, outcomes, a detailed syllabus, and references for subjects such as Basic Electronics Engineering and Digital Logic Design. The syllabus emphasizes key topics like semiconductor physics, diodes, transistors, operational amplifiers, and digital logic gates.
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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UniversityofEngineeringandManagement

InstituteofEngineering&Management,SaltLakeCampusInstituteofEn
gineering&Management,NewTownCampus
UniversityofEngineering&Management,Jaipur

1stSemesterSyllabusforB.Tech in ECEBatch2025-2029

1
Index:

Content PageNo.

SyllabusStructure 3
Course Objective 4
Course Outcome 5
Detailed Syllabus 5-9
Textbooks& Reference Books 9

2
SyllabusStructure:

Sl. Type Subject Subject L T P Total Credit


No. Code Name
1Engineering ESCEC101 Basic Electronics Engineering 3 1 0 4 4
Science Course
2 Engineering ESCEC191 Basic Electronics Engineering Lab 0 0 2 2 1
Science Course
TotalCreditpoints 5

3
UniversityofEngineeringandManagement
Institute of Engineering & Management, Salt Lake
CampusInstituteofEngineering&Management,NewTownCampusU
niversityofEngineering&Management,Jaipur

1 st Semester SyllabusforB.Tech in ECEBatch2025-2029


SubjectName:Basic Electronics Engineering Credit:3 Lecture Hours:36
SubjectCode:ESCEC101
Pre-requisite:Basic Knowledge in Physics in Class 12 level
RelevantLinks:

Study Material CourseraNPTELLinkedin Learning

COURSEOBJECTIVES:
1. To introduce basic concept of Electronics
2. To study semiconductor, its band-structure, p-type and n-type semiconductor
3. To introduce the concept of P-N junction diode, Zener diode.
4. To learn the concept of BJT, FET and OPAMP.
5. To illustrate the basic concept of logic gates

4
COURSEOUTCOMES:
CO1:To conceptualize the fundamentals of semiconductor physics, including the band structures.
CO2:To be able to understand the basics of p-n junction diode and Zener diode and their applications.
CO3:To be able to understand the concept of Transistors working principles, characteristics and their applications.

CO4: To study the basics of digital electronics including basic gates, universal gates and truth tables.

Lecture
Hours
Mapping with Industryand
number
Module

Topic Sub-topics International Academia Textbook Mapping CorrespondingLab


Assignment

1 Semiconductor Classification of Metal, International Academia: Electronic Devices 1. Familiarization


Physics insulator and (https://ocw.mit.edu/courses/6- and Circuits Theory with passive and
semiconductor, 012-microelectronic-devices- 6 by Robert L. active electronic
Introduction to active and and-circuits-fall-2009) Boylestad, Louis components such
passive components, (https://ocw.mit.edu/courses/6- Nashelsky as Resistors,
intrinsic and extrinsic 012-microelectronic-devices- Inductors,
semiconductor, n-type and-circuits-fall-2005/) Chapter-1 Capacitors,
and p-type AICTE-prescribed syllabus: Diodes,
semiconductors and their (https://www.aicte- Transistors (BJT)
Band structure, carrier india.org/sites/default/files/Mod and electronic
concentration, scattering el_Curriculum/Final_ECE.pdf) equipment like
and drift of electrons and Industry Mapping: DC power
holes, drift current, TCAD Software supplies,
diffusion mechanism, millimetres etc.
generation and 2. Familiarization
recombination and with measuring
injection of carriers, and testing
5
density of state function equipment like
and dimensional problem CRO, Signal
quantization generators etc.

2 P-n Junction Diodes: Semiconductor p-International Academia: 6 Electronic Devices 1. Circuit designing
diode and Zener n junction formation,(https://ocw.mit.edu/courses/6- and Circuits Theory using p-n junction
diode forward and reverse bias,012-microelectronic-devices- by Robert L. diodes.
V-I characteristics ofp-n and-circuits-fall-2009) Boylestad, Louis
junction diode, Current Nashelsky i. Study the I-V
equation, Derivation for (https://ocw.mit.edu/courses/6- characteristics of a p-
Forward and Reverse012-microelectronic-devices- Chapter-2 n junction diode
current, piece-wise and-circuits-fall-2005/)
linear diode AICTE-prescribed syllabus: ii. Design and
characteristics, Diode as (https://www.aicte- implement clipper
a switch, Application of india.org/sites/default/files/Mod circuits using a diode
diode in Clipper andel_Curriculum/Final_ECE.pdf) and observe their
Clamper Circuits, Zener Industry Mapping: effect on the output
Diodes, V-I characteristics TCAD Software waveform.
of Zener Diodes,
application of junction iii. Design and
diode as a rectifier, Half- implement clamper
Wave and Full-Wave circuits using a diode
Rectifier Circuits, SCR and observe their
effect on the output
6
Operation&Characteristics waveform.
.
2. Study of I-V
characteristics of
Zener diodes.
3. Design and
implement
voltage over-
protection circuit
using a Zener
diode
4. Study of Half and
Full wave
rectifiers with
Regulation and
Ripple factors.
3 Bipolar Junction Bipolar Junction International Academia: 6 Electronic Devices 1. Study of
Transistors Transistor (BJT): Type, (https://ocw.mit.edu/courses/6- and Circuits Theory Characteristic
Operation, Physical 012-microelectronic-devices- by Robert L. curves for CB,
mechanism, current gain, and-circuits-fall-2009) Boylestad, Louis CE mode
minority current (https://ocw.mit.edu/courses/6- Nashelsky configuration and
distribution;Punch- 012-microelectronic-devices- find the
through and avalanche and-circuits-fall-2005/) Chapter-3 respective hybrid
effect, V-I Characteristics, AICTE-prescribed syllabus: parameters.
region of operation, input (https://www.aicte-
& output characteristics india.org/sites/default/files/Mod
for CB. CE & CC mode, el_Curriculum/Final_ECE.pdf)
current amplification Industry Mapping:
factors α for CB mode and TCAD Software, SPICE
β for CE mode,BJT as Software
amplifier and switch,
small signal analysis,
small signal analysis using
h-parameter, gain and
impedance calculation
7
4 Field Metal Oxide Semiconductor International Academia: 6 Electronic Devices and 1. Study of I-V
effecttransistors Field Effect Transistors(https://ocw.mit.edu/courses/6- Circuits Theory by characteristics of
(MOSFET): Construction, 012-microelectronic-devices-and- Robert L. Boylestad, Field Effect
Types, Operation, V-I circuits-fall-2009) Louis Nashelsky Transistors and
characteristics, Regions of show the
operation, MOSFET as (https://ocw.mit.edu/courses/6- Chapter-6 characteristics in
switch & amplifier, CMOS012-microelectronic-devices-and- LTSpice.
technology, Advanced circuits-fall-2005/)
CMOS devices (Example: AICTE-prescribed syllabus:
FinFETs, MOSFETs with (https://www.aicte-
high mobility channels, andindia.org/sites/default/files/Model_
silicon nanowire transistors), Curriculum/Final_ECE.pdf)
IGBT Industry Mapping:
TCAD Software, SPICE Software
5 OPAMP Ideal Op-AMP, CMRR, International Academia: 6 Electronic Devices 1. Design and
Open & Closed loop (https://ocw.mit.edu/courses/6- and Circuits Theory simulate Inverting
circuits, importance of 012-microelectronic-devices- by Robert L. and Non-
feedback loop (positive & and-circuits-fall-2009) Boylestad, Louis inverting
negative), Inverting Nashelsky amplifiers using
Configuration, (https://ocw.mit.edu/courses/6- Op-amp and draw
Noninverting 012-microelectronic-devices- Chapter - 10,11 waveforms in
configuration, DC and-circuits-fall-2005/) LTSpice
imperfections, difference AICTE-prescribed syllabus: 2. Design and
amplifiers, circuits based (https://www.aicte- simulate Adder
on Op-amps: Integrators, india.org/sites/default/files/Mod and Subtractor
differentiators, filters, el_Curriculum/Final_ECE.pdf) circuits using Op-
logarithmic amplifiers, Industry Mapping: amp and draw
Schmitt trigger, frequency TCAD Software, SPICE waveforms in
dependent negative Software LTSpice
resistance and solution of 3. Design and
differential equations simulate
Differentiator and
Integrator circuits
using Op-amp
and draw
waveforms in
8
LTSpice
4. Determination of
input-offset
voltage, Offset
null of Op-amps,
etc.
6 Digital Logic Components of TTL International Academia: 6 Digital Logic Design 1. Study of Logic
gates circuits, Boolean Algebra (https://web.stanford.edu/class/a 4th Edition by M . Gates and
and Logic Gates, Basicrchive/ee/ee108a/ee108a.1082/s Morris Mana and realization of
Logic AND, OR, NOTchedule.html) Michael D. Ciletti Boolean functions
Gates and Universal gates,AICTE-prescribed syllabus: using Logic
XOR and XNOR gate, (https://www.aicte- Chapters 1,2,4 Gates.
their symbols and Truthindia.org/sites/default/files/Mod 2. Show NAND and
tables, De Morgan’sel_Curriculum/Final_ECE.pdf) NOR gates are
Theorems, CombinationalIndustry Mapping: Hardware universal gates.
Circuit Chipsets 3. Write a VHDL
(adders/subtractors, Software-TinkerCad, EDA code to describe
magnitude comparator, Playground the functionality
multiplexer, of various gates.
demultiplexers, encoders, Compile and
decoders). simulate the code
to obtain the
timing waveform.

TEXTBOOKS:

1. Electronic Devices and Circuits Theory by Robert L. Boylestad, Louis Nashelsky (Chapters 1,2,3,6,10,11)
2. Digital Logic Design 4th Edition by M . Morris Mano and Michael D. Ciletti (Chapters 1,2,4)

REFERENCEBOOKS:
1. Streetman, Solid State Electronic Devices, Pearson Education India
2. Donald Neamen, Semiconductor Physics and Devices, McGraw-Hill Higher Education
3. Simon M. Sze, Yiming Li, Kwok K. Ng, Physics of Semiconductor Devices, John Wiley & Sons
9
4. Millman, Grabel, Microelectronics, McGraw Hill
5. Sedra, Smith, Microelectronic Circuits, Oxford University Press.

10

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