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D2394 SavantIC

The document provides the product specification for the Silicon NPN Power Transistor 2SD2394, which features a TO-220F package, low collector saturation voltage, and a wide safe operating area. It includes details on pin configuration, absolute maximum ratings, and key electrical characteristics. Additionally, it outlines the transistor's breakdown voltages, saturation voltages, and DC current gain classifications.

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saad Mohamed Eissa
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21 views3 pages

D2394 SavantIC

The document provides the product specification for the Silicon NPN Power Transistor 2SD2394, which features a TO-220F package, low collector saturation voltage, and a wide safe operating area. It includes details on pin configuration, absolute maximum ratings, and key electrical characteristics. Additionally, it outlines the transistor's breakdown voltages, saturation voltages, and DC current gain classifications.

Uploaded by

saad Mohamed Eissa
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD2394

DESCRIPTION
www.datasheet4u.com
·With TO-220F package
·Low collector saturation voltage
·Wide SOA (safe operating area)
·Complement to type 2SB1565

PINNING

PIN DESCRIPTION

1 Base

2 Collector

Fig.1 simplified outline (TO-220F) and symbol


3 Emitter

Absolute maximum ratings (Ta=25 )


SYMBOL PARAMETER CONDITIONS MAX UNIT

VCBO Collector-base voltage Open emitter 80 V

VCEO Collector-emitter voltage Open base 60 V

VEBO Emitter-base voltage Open collector 7 V

IC Collector current 3 A

ICM Collector current-peak 6 A

Ta=25 2
PC Collector dissipation W
TC=25 25

Tj Junction temperature 150

Tstg Storage temperature -55~150


SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD2394

CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;IB=0 60 V

V(BR)CBO Collector-base breakdown voltage IC=50µA ;IE=0 80 V

V(BR)EBO Emitter-base breakdown voltage IE=50µA ;IC=0 7 V

VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.2A 1.0 V

VBEsat Base-emitter saturation voltage IC=2A ;IB=0.2A 1.5 V

ICBO Collector cut-off current VCB=60V; IE=0 10 µA

IEBO Emitter cut-off current VEB=7V; IC=0 10 µA

hFE DC current gain IC=0.5A ; VCE=5V 100 320

COB Output capacitance IE=0 ; VCB=10V;f=1MHz 35 pF

fT Transition frequency IC=0.5A ; VCE=5V;f=5MHz 8 MHz

hFE Classifications

E F

100-200 160-320

2
SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD2394

PACKAGE OUTLINE

www.datasheet4u.com

Fig.2 Outline dimensions

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