2N3859A
w w w. c e n t r a l s e m i . c o m
SILICON
NPN TRANSISTOR DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3859A is a
silicon NPN transistor designed for general purpose
amplifier and switching applications.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL UNITS
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 60 V
Emitter-Base Voltage VEBO 6.0 V
Continuous Collector Current IC 100 mA
Power Dissipation PD 625 mW
Power Dissipation (TC=25°C) PD 1.5 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJA 200 °C/W
Thermal Resistance ΘJC 83.3 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICBO VCB=60V 50 nA
IEBO VEB=6.0V 100 nA
BVCBO IC=100μA 60 V
BVCEO IC=1.0mA 60 V
BVEBO IE=100μA 6.0 V
VCE(SAT) IC=10mA, IB=1.0mA 125 mV
VBE(SAT) IC=10mA, IB=1.0mA 780 mV
hFE VCE=4.5V, IC=2.0mA 100 200
hFE VCE=1.0V, IC=10mA 100
fT VCE=10V, IC=2.0mA 90 250 MHz
Cob VCB=10V, IE=0, f=1.0MHz 4.0 pF
rb’Cc VCE=10V, IC=2.0mA 150 ps
R0 (8-December 2014)
2N3859A
SILICON
NPN TRANSISTOR
TO-92 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Collector
3) Base
MARKING:
FULL PART NUMBER
R0 (8-December 2014)
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REQUESTING PRODUCT PLATING
1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when
ordering (example: 2N2222A TIN/LEAD).
2. If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number
when ordering (example: 2N2222A PBFREE).
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