SUP/SUB70N06-14

Vishay Siliconix

N-Channel 60-V (D-S), 175 °C MOSFET

PRODUCT SUMMARY
V(BR)DSS (V) rDS(on) (Ω) ID (A)
Pb-free
60 0.014 70a Available

RoHS*
COMPLIANT
TO-220AB D

TO-263

G
DRAIN connected to TAB

G D S
Top View
G D S
S
Top View SUB70N06-14

N-Channel MOSFET
SUP70N06-14

Ordering Information: SUB70N06-14

SUB70N06-14-E3 (Lead (Pb)-free)
SUP70N06-14-E3 (Lead (Pb)-free)

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit
Gate-Source Voltage VGS ± 20 V
TC = 25 °C 70a
Continuous Drain Current (TJ = 175 °C) ID
TC = 100 °C 49
A
Pulsed Drain Current IDM 160
Avalanche Current IAR 70
b L = 0.1 mH EAR 180 mJ
Repetitive Avalanche Energy
TC = 25 °C (TO-220AB and TO-263) 142c
Power Dissipation PD W
TA = 25 °C (TO-263)d 3.7
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Limit Unit
PCB Mount (TO-263)d 40
Junction-to-Ambient RthJA
Free Air (TO-220AB) 62.5 °C/W
Junction-to-Case RthJC 1.05
Notes:
a. Package limited.
b. Duty cycle ≤ 1 %.
c. See SOA curve for voltage derating.
d. When Mounted on 1" square PCB (FR-4 material).

For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm.

* Pb containing terminations are not RoHS compliant, exemptions may apply.

Document Number: 70291 www.vishay.com

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SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 µA 60
V
Gate Threshold Voltage VGS(th) VDS = VGS, IDS = 1 mA 2.0 3.0 4.0
Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA
VDS = 60 V, VGS = 0 V 1
Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V, TJ = 125 °C 50 µA
VDS = 60 V, VGS = 0 V, TJ = 175 °C 150
On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V 70 A
VGS = 10 V, ID = 30 A 0.014
Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 30 A, TJ = 125 °C 0.023 Ω
VGS = 10 V, ID = 30 A, TJ = 175 °C 0.028
Forward Transconductancea gfs VDS = 15 V, ID = 30 A 25 50 S
b
Dynamic
Input Capacitance Ciss 2400
Output Capacitance Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 490 pF
Reverse Transfer Capacitance Crss 130
Total Gate Chargec Qg 45 70
Gate-Source Chargec Qgs VDS = 30 V, VGS = 10 V, ID = 60 A 12 nC
c Qgd 16
Gate-Drain Charge
Turn-On Delay Timec td(on) 13 30
Rise Timec tr VDD = 30 V, RL = 0.47 Ω 11 30
ns
Turn-Off Delay Timec td(off) ID ≅ 60 A, VGEN = 10 V, RG = 2.5 Ω 30 60
Fall Timec tf 11 25
Source-Drain Diode Ratings and Characteristics TC = 25 °Cb
Continuous Current IS 70
A
Pulsed Current ISM 160
Forward Voltagea VSD IF = 70 A, VGS = 0 V 1.4 V
Reverse Recovery Time trr 47 ns
Peak Reverse Recovery Current IRM(REC) IF = 60 A, di/dt = 100 A/µs 3.5 A
Reverse Recovery Charge Qrr 0.08 µC
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

www.vishay.com Document Number: 70291

2 S-80107-Rev. D, 21-Jan-08
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

150 100
VGS = 10, 9, 8 V
7V
125
80

I D - Drain Current (A)

I D - Drain Current (A)

100
6V 60

75

40
50 5V
TC = 125 °C
20
25
4V 25 °C
- 55 °C
0 0
0 2 4 6 8 10 0 2 4 6 8 10

VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Output Characteristics Transfer Characteristics

80 0.0200
TC = - 55 °C
70
0.0175
r DS(on) - On-Resistance (Ω)

60 25 °C
g fs - Transconductance (S)

0.0150
50 125 °C
VGS = 10 V
40 0.0125

30 VGS = 20 V
0.0100
20
0.0075
10

0 0.0050
0 10 20 30 40 50 60 0 10 20 30 40 50 60 70

VGS - Gate-to-Source Voltage (V) ID - Drain Current (A)

Transconductance On-Resistance vs. Drain Current

3500 20

3000 VDS = 30 V
VGS - Gate-to-Source Voltage (V)

16 ID = 60 A
Ciss
2500
C - Capacitance (pF)

12
2000

1500
8

1000
Coss
Crss 4
500

0 0
0 10 20 30 40 0 20 40 60 80 100

VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC)

Capacitance Gate Charge

Document Number: 70291 www.vishay.com

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Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.5 100
VGS = 10 V
ID = 30 A
2.0
TC = 150 °C
r DS(on) - On-Resistance

I S - Source Current (A)

(Normalized)

1.5 TC = 25 °C
10
1.0

0.5

0 1
- 50 - 25 0 25 50 75 100 125 150 175 0.25 0.50 0.75 1.00 1.25 1.50
TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
THERMAL RATINGS
100 500

80 100
I D - Drain Current (A)

Limited
I D - Drain Current (A)

by rDS(on)*
60 100 µs
10

1 ms
40
10 ms
1
TC = 25 °C 100 ms,
20 1 s, DC
Single Pulse

0 0.1
0 25 50 75 100 125 150 175 0.1 1 10 100
TC - Case Temperature (°C) VDS - Drain-to-Source Voltage (V)
Maximum Avalanche and Drain Current * VGS > minimum VGS at which rDS(on) is specified
vs. Case Temperature Safe Operating Area

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2

0.1
0.1
0.05

0.02

Single Pulse

0.01
10-5 10-4 10-3 10-2 10-1 1 3
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?70291.

www.vishay.com Document Number: 70291

4 S-80107-Rev. D, 21-Jan-08
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