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The document outlines the key considerations and processes involved in MEMS packaging, including design factors, types of packaging solutions, and enabling technologies. It details the three levels of MEMS packaging—die, device, and system levels—and discusses various bonding and sealing techniques essential for ensuring reliability and functionality. Additionally, it highlights the importance of material selection and environmental compatibility in the packaging of MEMS devices.
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Save MEMS PACKAGING For Later é MICROELECTRONIC
ernGincErT
EMT 452
MEMS
SEMESTER I! 2010/2011
MEMS PackagingOutlines
Introduction
Key Design and Packaging Considerations
Three Levels of MEMS Packaging
Interfaces in Microsystems Packaging
Enabling Packaging Technologies
Die Preparation
Surface Bonding / Die-Attach Processes
- Wire Bonding
- Sealing
Types of Packaging Solutions
- Ceramic Packaging
- Metal Packaging
- Molded Plastic Packaging
Quality Control, Reliability, and Failure Analysis
- Quality Control and Reliability Standards
- Statistical Methods in Reliability
- Accelerated Life Modeling
- Major Failure ModesIntroduction
e For example, the packaging of a pressure
sensor must ensure that the sensing
device is in intimate contact with the
pressurized medium yet protected from
exposure to any harmful substances in
this medium.Introduction
e For example, the packaging of a pressure
sensor must ensure that the sensing
device is in intimate contact with the
pressurized medium yet protected from
exposure to any harmful substances in
this medium.Introduction
e For example, the packaging of a pressure
sensor must ensure that the sensing
device is in intimate contact with the
pressurized medium yet protected from
exposure to any harmful substances in
this medium.Key Design and Packaging Considerations
Designing packages for micromachined sensors
and actuators involves a number of important
factors.
Some are shared with the packaging of
electronic integrated circuits, but many are
specific to the application.
These factors also bear significance on the
design of the micromachined components
themselves.
As a result, the design of the package and of
the micromachined structures must commence
and evolve together.Figure 8.1 A simplified process flow
for MEMS packaging.
Tebespectandtet wafer 2.Sawanddcewoler 3. Separate dice 4 Petrocss
(optional) 1, Upon completion of wafer-level
fabrication, inspection and first
> » tests take place.
The wafer is then mounted on a
special sticky tape and sawed. The
individual dice are separated. Some
post processing, such as removal of
a sacrificial layer, may occur at this
point. One die or many dice are
attached to a ceramic, a metal
header, or a premolded plastic lead
frame.
3. Electrical interconnects are made
by wire bonding, flip chip, or
another method.
4. Aceramic, metal, glass, or plastic
cap seals the assembly.
Alternatively, the die or dice are
attached to a metal lead frame.
5. After the electrical interconnects
are made, plastic is molded over
the assembly. A final test and
5. Die attach and calibration conclude the process.
interconnects This simple process does not allow
for fluidic or optical connections.
N
7, Calibration and 6, Package seal
final testCritical factors and considerations in MEMS
packaging
e The required costs in manufacturing, assemblies and
packaging of the components.
e The expected environmental effects, such as
temperature, humidity, chemical toxicity, etc. that the
product is designed for.
e Adequate over capacity in the packaging design for
mishandling and accidents.
e Proper choice of materials for the reliability of the
package.
e Achieving minimum electrical feed-through and bonds in
order to minimize the probability of wire breakage and
malfunctioning.Three levels of MEMS packaging
Level 1: The “die level”,
Level 2: The “device level”,
Level 3: The “system level”.
System Packaging:
fete eee lee eee tee ce eee,
! Device packaging
peceeneenennenee
| I Die Packaging: I
\ Toput ! ' Y Sensing '
Action yt {Element \fSignat tapping} Sigal
i! [& Transduction Conditioning &
1_| Actuating 1) Processing
(Motion 1Die-level packaging
Dies in most microsystems are the most delicate
components, which require adequate protection.
The objectives of this level packaging are:
e To protect the die or other core elements from
plastic deformation and cracking,
e To protect the active circuitry for signal transduction
of the system,
e To provide necessary mechanical isolation of these
elements, and
e To ensure the system functioning at both normal
operating and over- load conditions.
This level involves wire bonds for electronic signal
transmission and transduction such as the embedded
piezoresistors in a pressure sensor die and the circuits
that connect to them.Die-level packaging often involves
wire bonding:
Pressure sensor with metal casing:
Pressure sensor with plastic encapsulation:
Inferconnect Metal cover
4 “A Fond
i
ce ae)
Plastic encapsulant \
La inletDevice-level packaging
« electric bridges
« signal conditioning circuits
Input 7 [Sensing
action/—I| element
Signal
conditioning
Signal mapping
8 transduction
‘Actuating
element
|_/Power
ite J supply
* Proper regulation
of input power
Major interface problems:
«The interfaces of delicate dies and core elements with other
parts of the packaged products at radically different sizes
«The interfaces of these delicate elements with environmental
factors, such as temperature, pressure and toxicity of the working
and the contacting media.System-level packaging
e Involves the packaging of primary signal circuitry with the package
of the die or core element unit.
Major tasks involve proper mechanical and thermal isolation as well
as electromagnetic shielding of the circuitry.
e Metal housings usually give excellent protection for mechanical and
electromagnetic influences.
e MEMS devices or microsystems at the end of this packaging level are
ready to be “plug-in” to the existing engineering systems.
Packaged inertia
Sensor for airbag
Deployment systemInterfaces in Microsystems Packaging
e Various parts, in particular, the delicate dies
of microsystems are expected to be in contact
with various working media, e.g. chemicals,
optical, corrosive gases, etc.
e Interface between these parts with working
media becomes a major design issue in
packaging.Biomedical interfaces
The packaged systems need to be biologically compatible with
human systems and they are expected to function for a specified
lifetime.
Every micro biosystem must be built to satisfy the following
requirements that are related to interface:
. It is inert to chemical attack during the useful lifetime of the unit.
. It follows mixing with biological materials in a well-controlled
manner if it is used as biosensors.
. It causes no damage or harm to the surrounding biological cells in
the cases of instrumented catheters such as pace makers.
. It causes no unwanted chemical reactions such as corrosion
between the packaged device and the contacting human body
fluids, tissue and cells.Optical interfaces
¢ There are two principal types of optical
MEMS:
1.The direction of the lights in devices,
e.g. micro switches involving mirrors and
reflectors.
2.Optical sensors.* Optical MEMS require:
Proper passages for light beams to be received and
reflected.
Proper surface coating for receiving and reflect
lights.
The quality of the coating must be enduring during
the lifetime of the device.
The surfaces must be free of contamination of
foreign substance.
The enclosure must be free of moisture. The
presence of moisture may cause stiction of the
enclosed components.Electromechanical interface
¢ Electrical insulation, grounding and shielding
are typical problems to be dealt with in MEMS
and microsystems packaging.Interfaces in microfluidics
- Require precise fluid delivery, hermal and
environmental isolation and mixing.
- Material compatibility of microchannel and
contained solvent
- Major interface problems:
Usealing of the fluid
Uinterface between the contacting channel
walls and fluid
containment wallEnabling Packaging Technologies
Die preparation
« Dies, or substrates in MEMS, are normally cut (sliced) from single
wafers using thin diamond saw blades.
Spacing between dies: = 50 jim with saw blade thickness of 20 pm.
Cutting wheel: 75 - 100 mm diameter
Cutting speed: 30,000 - 40,000 rpm.Die-Attach / Surface Bonding Processes
« After wafer dicing, each individual die is mounted
inside a package and attached (bonded) onto a
platform made of metal or ceramic, though plastic is
also possible under limited circumstances.
There are four (4) techniques available for surface bonding
in MEMS and microsystems:
(1) Adhesives
(2) Eutectic soldering
(3) Anodic bonding
(4) Silicon fusion bonding (SFB)Bonding by adhesives
e Epoxy resin and silicone rubbers are two commonly
used adhesives.
e Good bonding by epoxy resin rely on surface
treatments and curing process control. Avoid glass
transition temperature at 150-175°C.
e Soft silicone rubbers are used for bonding parts
require “flexibility.” It is vulnerable to chemicals and
air.
Mechanical Pressure
Bonding part
pl adhesive
a Occ |Eutectic bonding
Eutectic bonding involves the diffusion of atoms of
eutectic alloys into the atomic structures of the materials
to be bonded together.
Must first select a candidate material that will form a
eutectic alloy with the materials to be bonded.
A common material to form eutectic alloy with silicon is
thin films made of gold or alloys that involve gold.
Gold-tin (80% Au+20% Sn) films around 25 ym thick is
commonly used.
Bonding takes place at about 300°C.
Offers much solid bonding than adhesives.
Ce
Au/Sn FilmAnodic bonding
The working principle of Glass-to-silicon wafer bonding:
[Weight for contacting pressure (Cathode)
Siemens
Heated mechanical support (Anode)
Applied DC voltage:
200-1000 volts
sr
Aiea)
Wot Plate (Anode)
‘Weight for contact
Pressure (Cathode) Na Depletion | —>| b- =20nm
Laver = 1. um Bonding interfaceAnodic bonding
The working principle of Glass-to-silicon wafer bonding:
[Weight for contacting pressure (Cathode)
Siemens
Heated mechanical support (Anode)
Applied DC voltage:
200-1000 volts
sr
Aiea)
Wot Plate (Anode)
‘Weight for contact
Pressure (Cathode) Na Depletion | —>| b- =20nm
Laver = 1. um Bonding interfaceSilicon Fusion bonding
e It is the induced chemical forces that bond the pieces
together.
e Wafer surfaces need to be extremely flat (at 4 nm) to
be bonded.
e Bonding strength between silicon wafers can be as high
as 20 MPa.
e The SFB process begins with thorough cleaning of the
bonding surfaces. These surfaces must be polished,
then make them hydrophilic by exposing them in boiling
nitric acid.
e These two surfaces are naturally bonded even at room
temperature.
e Strong bonding occurs at high temperature in the
neighborhood of 1100°C to 1400°C.Silicon Fusion bonding
e It is the induced chemical forces that bond the pieces
together.
e Wafer surfaces need to be extremely flat (at 4 nm) to
be bonded.
e Bonding strength between silicon wafers can be as high
as 20 MPa.
e The SFB process begins with thorough cleaning of the
bonding surfaces. These surfaces must be polished,
then make them hydrophilic by exposing them in boiling
nitric acid.
e These two surfaces are naturally bonded even at room
temperature.
e Strong bonding occurs at high temperature in the
neighborhood of 1100°C to 1400°C.Wire Bonding
Wire bonding techniques provides the electrical connection to
or from the core elements.
ET
—— 7
tom VA i aca
a on
Saal Maw if
ooen| Be “= astic encapsulant x Pressed
The three (3) wire bonding techniques
used in IC industry are adopted for
MEMS and microsystems.
* Thermocompression wire bonding
* Wedge-wedge ultrasonic bonding
¢ Thermosonic bonding.
* Common wire materials are Au, Ag, Al,
Cu and Pt with diameters at 20-80 ym.
‘* Wire bonding is fully automatic.Thermocompression wire bonding
Wire bonding is accomplished with mechanical compression at elevated
temperatures at about 400°C.
¢ The bonding process is illustrated as:
- Heat the wire to form a bead
Feed the bead to the pad by pulling down the capillary tool:
Metal “
(HEA eer? © Compress the bead to
at pad mechanically:
y Metal Pad
© Retract the capillary tool
pura | after the bead is bonded
to the pad: W
SubstrateWedge-wedge ultrasonic bonding
This bonding process takes place at room temperature.
e The energy supply to the bonding is from ultrasonic vibration of
the tool at 20 - 60 kHz.
e The process is illustrated as:
Tool Direction
Wedge
Bonding h\ Wire bard vee
Tool Teal
Nith mechanical
sompression: bing
ea Metal Pads
Nate Pads
Thermosonic bonding
e This process uses ultrasonic energy with thermocompression.
e As such, wire bonding can take place at 100-150°C.
Joints can be in either ball-wedge or wedge-wedge form.Sealing
Sealing is a key requirement in MEMS and microsystems packaging.
Hermetic sealing is essential in devices or systems such as:
microfluidic, optoMEMS, bioMEMS, pressure sensors, etc.
There are generally 3 sealing techniques available for MEMS and
microsystems:
(1) Mechanical sealing technique:
« Epoxy for microfluidics. It is flexible but ages with time.
e Eutectic soldering for hermetic seals.
(2) 2) Sealing by microfabrication processes - Sealing by micro
shells:
Doped silicon PSG sacrificial Doped silicon
layer micro shell
Die
(a) With sacrificial layer (b) After the removal of sacrificial layer(3) Sealing by chemical reactions: Sealing
* Sealing is accomplished by “growing” the sealant using
chemical reactions.
« Example is the production of SiO, as the sealant for sealing a
delicate die with a silicon shell.
« The growth of SiO, from the silicon encapsulant to the
constraint base provides reliable and hermetic seal for the die
Silicon shell
SiO,
Si Constraint base
SiO, film
Si Constraint base
(@) Unsealed encapsulant (b) Sealed encapsulation by oxide
grown from silicon shellTypes of Packaging
A package is a protective housing with an
enclosure to hold one or multiple dice forming a
complete microelectromechanical device or
system.
The package provides where necessary
electrical, optical, and fluid connectivity
between the dice and the external world
There are three general categories of widely
adopted packaging approaches in MEMS; ceramic,
metal, and plastic.Ceramic Packaging
« Alumina (Al,0;) is the most common of all
ceramics, having been used over the centuries
in porcelain and fine dinnerware.
Aluminum nitride (ALN) and beryllia (BeO) have
superior material properties (e.g., better
thermal conductivity), but the latter is very
toxic.
Aluminum nitride substrates tend to be costly
in particular because of required complex
processing due to the difficulty of sintering the
material.Ceramic Packaging
« Alumina (Al,0;) is the most common of all
ceramics, having been used over the centuries
in porcelain and fine dinnerware.
Aluminum nitride (ALN) and beryllia (BeO) have
superior material properties (e.g., better
thermal conductivity), but the latter is very
toxic.
Aluminum nitride substrates tend to be costly
in particular because of required complex
processing due to the difficulty of sintering the
material.Ceramic Packaging
« Alumina (Al,0;) is the most common of all
ceramics, having been used over the centuries
in porcelain and fine dinnerware.
Aluminum nitride (ALN) and beryllia (BeO) have
superior material properties (e.g., better
thermal conductivity), but the latter is very
toxic.
Aluminum nitride substrates tend to be costly
in particular because of required complex
processing due to the difficulty of sintering the
material.Aceramic package is made of laminates, each formed and patterned
separately, then brought together and cofired (sintered) at an elevated
temperature—typically between 1,500°C and 1,600°C.
LEF LFF,
_ eal, hey, eR,
yy
1. Cast ceramic 2, Punch holes 3. Fill 4, Metalize 5. Cut, stack, and laminate
“ eee J
9.Gold or nickel plate 8. Braze pins 7. Nickel plate 6. Sinter
Figure 8.8 Process flow for the fabrication of a cofired laminated ceramic package with electrical pins and
access ports. (Courtesy of: the Coors Electronic Package Company of Golden, Colorado.)Metal Packaging
The silicon pressure sensor measures pressure transmitted via the
steel diaphragm and through the oil.
The robust steel package offers hermetic protection of the sensing
die and the wire bonds against adverse environmental conditions.
Each stainless steel package is individually machined to produce a
cavity.
The die is attached to a standard header with glass-fired pins and
wire bonded. This header is resistance welded to the stainless-
steel package.
Arc welding of a stainless steel diaphragm seals the top side of the
assembly.
Oil filling of the cavity occurs through a small port at the bottom
that is later plugged and sealed by welding a ballMetal Packaging
The silicon pressure sensor measures pressure transmitted via the
steel diaphragm and through the oil.
The robust steel package offers hermetic protection of the sensing
die and the wire bonds against adverse environmental conditions.
Each stainless steel package is individually machined to produce a
cavity.
The die is attached to a standard header with glass-fired pins and
wire bonded. This header is resistance welded to the stainless-
steel package.
Arc welding of a stainless steel diaphragm seals the top side of the
assembly.
Oil filling of the cavity occurs through a small port at the bottom
that is later plugged and sealed by welding a ballMetal Packaging
The silicon pressure sensor measures pressure transmitted via the
steel diaphragm and through the oil.
The robust steel package offers hermetic protection of the sensing
die and the wire bonds against adverse environmental conditions.
Each stainless steel package is individually machined to produce a
cavity.
The die is attached to a standard header with glass-fired pins and
wire bonded. This header is resistance welded to the stainless-
steel package.
Arc welding of a stainless steel diaphragm seals the top side of the
assembly.
Oil filling of the cavity occurs through a small port at the bottom
that is later plugged and sealed by welding a ball@
Steel diaphragm
Silicone oil
Stee! housing
Sealed fill port
Glass fired pins
(o)
Figure 8.13 (a) Photograph, and (b) cross-sectional schematic of a pressure sensor mounted
inside an oibfilled, stainless-steel package. Pressure is transmitted via the stainless-steel diaphragm
and through the oil to the silicon sensor. (Courtesy of: GE NovaSensor of Fremont, California.)Molded Plastic Packaging
In postmolded plastic packaging, the lead frame is spot-
plated with gold or silver on the paddle and the lead
tips to improve wire bonding.
The die is then attached with adhesive or eutectic
solder.
Wires are bonded between the die and the lead tips.
Plastic molding encapsulates the die and lead frame
assembly but leaves the outer edges of the leads
exposed.
These leads are later plated with tin or tin-lead to
improve wetting during soldering to printed circuit
boards. Finally, the outer frame is broken off and the
leads are formed into a final S-shape (see Figure 8.14).Molded Plastic Packaging
In postmolded plastic packaging, the lead frame is spot-
plated with gold or silver on the paddle and the lead
tips to improve wire bonding.
The die is then attached with adhesive or eutectic
solder.
Wires are bonded between the die and the lead tips.
Plastic molding encapsulates the die and lead frame
assembly but leaves the outer edges of the leads
exposed.
These leads are later plated with tin or tin-lead to
improve wetting during soldering to printed circuit
boards. Finally, the outer frame is broken off and the
leads are formed into a final S-shape (see Figure 8.14).Die with first evel silicon packaging
Plastic molding compound
Figure 8.14 Schematic showing a sectional view of a post-molded plastic package. The die is first
mounted on a center platform (the paddle) and wires bonded to adjacent electrical leads. The
paddle and the leads form a metal lead frame, over which the plastic is molded. A MEMS die
should include a frst level of packaging (e.g., a bonded silicon cap) as protection against the harsh
effects of the molding process. This particular illustration is of a plastic quad-flat pack (QFP) with
electrical leads along its entire outer periphery.Molded Plastic Packaging
In postmolded plastic packaging, the lead frame is spot-
plated with gold or silver on the paddle and the lead
tips to improve wire bonding.
The die is then attached with adhesive or eutectic
solder.
Wires are bonded between the die and the lead tips.
Plastic molding encapsulates the die and lead frame
assembly but leaves the outer edges of the leads
exposed.
These leads are later plated with tin or tin-lead to
improve wetting during soldering to printed circuit
boards. Finally, the outer frame is broken off and the
leads are formed into a final S-shape (see Figure 8.14).¢ Finally, a premolded plastic cap is attached using an
adhesive or ultrasonic welding. If necessary, the cap itself
may also contain a fluid access port. (see Figure 8.15).
Encapsulation gel
Premolded plastic cap meted
Bond wire ‘Adhesivelepoxy
Metal lead frame
Premolded plastic body
Pressure sensing die
‘Adhesive die attach
Figure 8.15 Illustration of a premolded plastic package [24]. Adapting it to pressure sensors
involves incorporating fluid ports in the premolded plastic housing and the cap.Design case: Packaging of Micro Pressure Sensor Dies Primary
packaging considerations
The die in a pressure sensor is to support the thin diaphragm that senses
the medium pressure by the induced stresses.
For accurate sensing the medium pressure, the stresses that the diaphragm
has sensed should be those stresses induced by the medium pressure ONLY.
e Unfortunately, there could be stresses induced in the diaphragm by sources
other than the medium pressure - the “parasite stresses”.
« A major source of parasite stress is from the thermal stresses induced by
significantly different CTE of various components attached to the diaphragm:
Silicon die:
9: 2.33 ppm"
Die attach
(G0Sn40Pbeader)
3526 ppc
How to ISOLATE the die/diaphragm from these sources of parasite stresses
become a primary consideration in the packaging design.Die down
¢ It is a process to bond the die to the constraint base with “die attach”.
e Three commonly used bonding techniques:
Anodic bonding
e Eutectic soldering
Adhesive
Normal die down Die down with “spacer” for die isolation:
The extension of the height by the spacer
increases the flexibility and thereby reduces
the parasite thermal stress.
Disadvantage: takes up extra space.Die protection
e The delicate die in a pressure sensor needs to be protected from possible
damage by the contact pressurized medium.
e There are three (3) ways to do this:
(1) By vapor-deposited organic on the die surface:
The deposited organic coating will insulate the die surface from the contact
medium. Unfortunately the deposited organic also serve as a “reinforcement”
and make the diaphragm undesirably stiff.
Thin organic protective layer-
Silicon die
Glass constraint base(2) By coating with silicone gel:
@ Silicone gel containing one or two parts of siloxanes has very low
Young’s modulus. So, it is very soft.
e Being soft, it would not add unwanted stiffness to the diaphragm.
e A few mm thick coating gives sufficient protection to the die.
e The only problem is aging and become contaminated with impurities
from the contact medium.(3) Indirect pressure transmission:
@ This method is used in situation in which the pressurized medium is so
environmentally hostile that direct contact of the die and medium is not
possible.
e A special arrangement is made for a special case that involved:
e P= 70 kPa - 350 MPa
@ Impact force = 10-20,000 g
e T = 5,000°F in milliseconds
¢ Media contain high-velocity dusts
e Die and wirebonds are submerged in silicone oil.
e Pressure from the media was transmitted to the diaphragm through silicon oil.
e The stainless steel diaphragm has compliance is 100 times less than that of
silicon diaphragm.
e Minimum volume of silicone oil in order to mitigate thermal expansion.
Ceramic volume
compensator
Diaphragm in contact withQuiz
* Explain how a micropump works?
* List THREE (3) applications of micropump.