SM5S Series
New Product Vishay Semiconductors
formerly General Semiconductor
Surface Mount Automotive
Transient Voltage Suppressors
DO-218AB Stand-off Voltage 10 to 36V
Peak Pulse Power 3600W (10/1000µs)
0.628(16.0) 2800W (10/10,000µs)
0.592(15.0)
0.539(13.7)
ted*
0.524(13.3) 0.116(3.0)
0.093(2.4)
aten
0.413(10.5) 0.342(8.7)
P Mounting Pad Layout
0.091(2.3)
0.374(9.5) 0.327(8.3)
0.067(1.7)
0.116(3.0)
0.413(10.5)
0.093(2.4)
0.374(9.5)
0.366(9.3)
0.343(8.7)
0.406(10.3)
0.382(9.7) Dimensions in
inches and (millimeters) 0.150(3.8)
0.366(9.3)
0.126(3.2)
0.343(8.7)
LEAD 1
0.138(3.5) 0.606(15.4)
0.098(2.5) 0.583(14.8)
0.197(5.0)
0.185(4.7)
*Patent #’s:
4,980,315
0.028(0.7)
0.016 (0.4) Min. 5,166,769
0.020(0.5)
5,278,095
0.098(2.5)
LEAD 2/METAL HEATSINK 0.059(1.5)
Features
Mechanical Data • Ideally suited for load dump protection
• Plastic package has Underwriters Laboratory
Case: Molded plastic body, surface mount with heatsink Flammability Classification 94V-0
integrally mounted in the encapsulation
• High temperature stability due to unique oxide passivation
Terminals: Plated, solderable per MIL-STD-750, Method 2026 and patented PAR®construction
Polarity: Heatsink is anode • Integrally molded heatsink provides a very low thermal
Mounting Position: Any resistance for maximum heat dissipation
Weight: 0.091 oz., 2.58 g • Low leakage current at TJ = 175°C
Packaging codes/options: • High temperature soldering guaranteed:
2D/750 per 13" Reel (16mm Tape), 260°C for 10 seconds at terminals
anode towards sprocket hole, 4.5K/box
2E/750 per 13" Reel (16mm Tape), • Meets ISO7637-2 surge spec.
cathode towards sprocket hole, 4.5K/box • Low forward voltage drop
Maximum Ratings and Thermal Characteristics (TC = 25°C unless otherwise noted)
Parameter Symbol Value Unit
Peak pulse power dissipation with 10/1000µs waveform 3600
PPPM W
10/10,000µs waveform 2800
Steady state power dissipation PD 5.0 W
(1)
Peak pulse current with a 10/1000µs waveform IPPM See Table 1 A
Peak forward surge current, 8.3ms single half sine-wave IFSM 500 A
Typical thermal resistance junction to case RθJC 1.0 °C/W
Operating junction and storage temperature range TJ, TSTG –55 to +175 °C
Notes: (1) Non-repetitive current pulse derated above TA = 25°C
Document Number 88382 www.vishay.com
06-May-02 1
SM5S Series
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics (TC = 25°C unless otherwise noted)
Maximum Maximum Max. Peak Maximum
Reverse Reverse Pulse Clamping
Device Type Breakdown Voltage Test Current Stand-off Leakage Leakage Current Voltage at
V(BR) IT Voltage at VWM at VWM µs
at 10/1000µ IPPM
(V) VWM ID Tc = 175oC Waveform VC
Min. Max. (mA) (V) µA)
(µ µA)
ID(µ (A) (V)
SM5S10 11.1 13.6 5.0 10.0 15 250 191 18.8
SM5S10A 11.1 12.3 5.0 10.0 15 250 212 17.0
SM5S11 12.2 14.9 5.0 11.0 10 150 179 20.1
SM5S11A 12.2 13.5 5.0 11.0 10 150 198 18.2
SM5S12 13.3 16.3 5.0 12.0 10 150 164 22.0
SM5S12A 13.3 14.7 5.0 12.0 10 150 181 19.9
SM5S13 14.4 17.6 5.0 13.0 10 150 151 23.8
SM5S13A 14.4 15.9 5.0 13.0 10 150 167 21.5
SM5S14 15.6 19.1 5.0 14.0 10 150 140 25.8
SM5S14A 15.6 17.2 5.0 14.0 10 150 155 23.2
SM5S15 16.7 20.4 5.0 15.0 10 150 134 26.9
SM5S15A 16.7 18.5 5.0 15.0 10 150 148 24.4
SM5S16 17.8 21.8 5.0 16.0 10 150 125 28.8
SM5S16A 17.8 19.7 5.0 16.0 10 150 138 26.0
SM5S17 18.9 23.1 5.0 17.0 10 150 118 30.5
SM5S17A 18.9 20.9 5.0 17.0 10 150 130 27.6
SM5S18 20.0 24.4 5.0 18.0 10 150 112 32.2
SM5S18A 20.0 22.1 5.0 18.0 10 150 123 29.2
SM5S20 22.2 27.1 5.0 20.0 10 150 101 35.8
SM5S20A 22.2 24.5 5.0 20.0 10 150 111 32.4
SM5S22 24.4 29.8 5.0 22.0 10 150 91 39.4
SM5S22A 24.4 26.9 5.0 22.0 10 150 101 35.5
SM5S24 26.7 32.6 5.0 24.0 10 150 84 43.0
SM5S24A 26.7 29.5 5.0 24.0 10 150 93 38.9
SM5S26 28.9 35.3 5.0 26.0 10 150 77 46.6
SM5S26A 28.9 31.9 5.0 26.0 10 150 86 42.1
SM5S28 31.1 38.0 5.0 28.0 10 150 72 50.1
SM5S28A 31.1 34.4 5.0 28.0 10 150 79 45.4
SM5S30 33.3 40.7 5.0 30.0 10 150 67 53.5
SM5S30A 33.3 36.8 5.0 30.0 10 150 74 48.4
SM5S33 36.7 44.9 5.0 33.0 10 150 61 59.0
SM5S33A 36.7 40.6 5.0 33.0 10 150 68 53.3
SM5S36 40.0 48.9 5.0 36.0 10 150 56 64.3
SM5S36A 40.0 44.2 5.0 36.0 10 150 62 58.1
Note: For all types maximum VF = 2.0V at IF = 100A measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
www.vishay.com Document Number 88382
2 06-May-02
SM5S Series
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Load Dump Power Characteristics
Power Derating Curve (10ms Exponential Waveform)
8.0 3,000
2,500
Load Dump Power (W)
6.0
Power Dissipation (W)
2,000
4.0 1,500
1,000
2.0
500
0 0
0 50 100 150 200 25 50 75 100 125 150 175
Case Temperature (°C) Case Temperature (°C)
Pulse Waveform Reverse Power Capability
150 10,000
TA = 25°C
Pulse width (td) is defined as
Input Peak Pulse Current %
Reverse Surge Power (W)
tr = 10µs the point where the peak
current decays to 50% of IPP
100 Peak Value IPP
IPP
50 Half Value –
2
td
0 1,000
0 10 20 30 40 10 100
Time, ms (t) Pulse Width (ms) – 1/2 IPP Exponential Waveform
Typical Transient Thermal Impedance
100
Transient Thermal Impedance (°C/W)
RΘJA
10
RΘJC
1
0.1
0.01
0.01 0.1 1 10 100
t – Pulse Width (sec.)
Document Number 88382 www.vishay.com
06-May-02 3
