TIC246 SERIES

SILICON TRIACS
Copyright © 2000, Power Innovations Limited, UK DECEMBER 1971 - REVISED JUNE 2000

● High Current Triacs

TO-220 PACKAGE
● 16 A RMS (TOP VIEW)
● Glass Passivated Wafer
MT1 1
● 400 V to 800 V Off-State Voltage
MT2 2
● 125 A Peak Current
G 3
● Max IGT of 50 mA (Quadrants 1 - 3)
Pin 2 is in electrical contact with the mounting base.
MDC2ACA

absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING SYMBOL VALUE UNIT
TIC246D 400
TIC246M 600
Repetitive peak off-state voltage (see Note 1) VDRM V
TIC246S 700
TIC246N 800
Full-cycle RMS on-state current at (or below) 70°C case temperature (see Note 2) IT(RMS) 16 A
Peak on-state surge current full-sine-wave at (or below) 25°C case temperature (see Note 3) ITSM 125 A
Peak gate current IGM ±1 A
Operating case temperature range TC -40 to +110 °C
Storage temperature range Tstg -40 to +125 °C
Lead temperature 1.6 mm from case for 10 seconds TL 230 °C

NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at
the rate of 400 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.

electrical characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Repetitive peak
IDRM VD = rated VDRM IG = 0 TC = 110°C ±2 mA
off-state current
Vsupply = +12 V† RL = 10 Ω tp(g) > 20 µs 12 50
Gate trigger Vsupply = +12 V† RL = 10 Ω tp(g) > 20 µs -19 -50
IGT mA
current Vsupply = -12 V† RL = 10 Ω tp(g) > 20 µs -16 -50
Vsupply = -12 V† RL = 10 Ω tp(g) > 20 µs 34
Vsupply = +12 V† RL = 10 Ω tp(g) > 20 µs 0.8 2
Gate trigger Vsupply = +12 V† RL = 10 Ω tp(g) > 20 µs -0.8 -2
VGT V
voltage Vsupply = -12 V† RL = 10 Ω tp(g) > 20 µs -0.8 -2
Vsupply = -12 V† RL = 10 Ω tp(g) > 20 µs 0.9 2
VT On-state voltage ITM = ±22.5 A IG = 50mA (see Note 4) ±1.4 ±1.7 V
Vsupply = +12 V† IG = 0 Init’ ITM = 100 mA 22 40
IH Holding current mA
Vsupply = -12 V† IG = 0 Init’ ITM = -100 mA -12 -40
† All voltages are with respect to Main Terminal 1.
NOTE 4: This parameter must be measured using pulse techniques, tp = ≤ 1 ms, duty cycle ≤ 2 %. Voltage-sensing contacts separate from
the current carrying contacts are located within 3.2 mm from the device body.

PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
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 TIC246 SERIES
SILICON TRIACS
DECEMBER 1971 - REVISED JUNE 2000

electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Vsupply = +12 V† 80
IL Latching current (see Note 5) mA
Vsupply = -12 V† -80
Critical rate of rise of
dv/dt VD = Rated VD IG = 0 TC = 110°C ±400 V/µs
off-state voltage
Critical rise of VD = Rated VD TC = 80°C
dv/dt(c) ±1.2 ±9 V/µs
commutation voltage di/dt = 0.5 IT(RMS)/ms IT = 1.4 IT(RMS)
Critical rate of rise of VD = Rated VD
di/dt IGT = 50 mA TC = 110°C ±100 A/µs
on -state current diG/dt = 50 mA/µs
† All voltages are with respect to Main Terminal 1.
NOTE 5: The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics:
RG = 100 Ω, tp(g) = 20 µs, tr = ≤ 15 ns, f = 1 kHz.

thermal characteristics
PARAMETER MIN TYP MAX UNIT
RθJC Junction to case thermal resistance 1.9 °C/W
RθJA Junction to free air thermal resistance 62.5 °C/W

TYPICAL CHARACTERISTICS

GATE TRIGGER CURRENT GATE TRIGGER VOLTAGE

vs vs
CASE TEMPERATURE CASE TEMPERATURE
TC08AA TC08AB
1000 10
IGT - Gate Trigger Current - mA

VGT - Gate Trigger Voltage - V

100

10 1

Vsupply IGTM Vsupply IGTM

1
VAA = ± 12 V + + VAA = ± 12 V
+
+
+
- RL = 10 Ω +
-
-
-
} RL = 10 Ω
- - tp(g) = 20 µs tp(g) = 20 µs
- + - +
0·1 0·1
-60 -40 -20 0 20 40 60 80 100 120 -60 -40 -20 0 20 40 60 80 100 120
TC - Case Temperature - °C TC - Case Temperature - °C
Figure 1. Figure 2.

PRODUCT INFORMATION

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 TIC246 SERIES
SILICON TRIACS
DECEMBER 1971 - REVISED JUNE 2000

TYPICAL CHARACTERISTICS

HOLDING CURRENT LATCHING CURRENT

vs vs
CASE TEMPERATURE CASE TEMPERATURE
TC08AD TC08AE
100 1000
IH - Holding Current - mA

IL - Latching Current - mA
10 100

1 10
Vsupply IGTM
Vsupply VAA = ± 12 V
+ +
+ IG = 0 + -
- Initiating ITM = 100 mA - - VAA = ± 12 V
- +
0·1 1
-60 -40 -20 0 20 40 60 80 100 120 -60 -40 -20 0 20 40 60 80 100 120
TC - Case Temperature - °C TC - Case Temperature - °C
Figure 3. Figure 4.

PRODUCT INFORMATION

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 TIC246 SERIES
SILICON TRIACS
DECEMBER 1971 - REVISED JUNE 2000

MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO-220
4,70
4,20

3,96 10,4 1,32

ø 3,71 10,0 2,95 1,23
2,54

6,6
6,0

15,32
14,55

18,0 TYP. 6,1

5,6

14,1
1,47 12,7
0,97 1,07
0,66
1 2 3

2,74 0,64
2,34 0,41

5,28 2,90
4,68 2,40

ALL LINEAR DIMENSIONS IN MILLIMETERS

NOTE A: The centre pin is in electrical contact with the mounting tab.

PRODUCT INFORMATION