PART 1

SEMICONDUCTORS

SPECIAL PURPOSE DIODES

BIPOLAR JUNCTION TRANSISTORS

BJT DEVICES

BJT AMPLIFIERS

FET DEVICES

FET AMPLIFIERS

BJT AND FET FREQUENCY RESPONSE

BASIC OP AMP CIRCUITS

SEMICONDUCTOR DIODES

DIODE APPLICATIONS

TRANSISTOR BIAS CIRCUITS

DC BIASING BJTS

FIELD EFFECT TRANSISTORS

DC BIASING FETS
 INDIABIX 1
SEMICONDUCTORS 9. An n-type semiconductor material 16. A reverse-biased diode has the
C. has pentavalent impurity connected to the positive side
1. A silicon diode measures a low value atoms added. of the source, and the
of resistance with the meter leads in connected to the negative side of the
10. For a forward-biased diode, as
both positions. The trouble, if any, is source.
temperature is , the forward
C. the diode is internally shorted. A. cathode, anode
current for a given value of
forward voltage. 17. What types of impurity atoms are
2. Single-element semiconductors are B. increased, increases added to increase the number of
characterized by atoms with conduction-band electrons in intrinsic
11. Which statement best describes
valence electrons. silicon?
an insulator?
B. 4 C. pentavalent
C. A material with few free
electrons. 18. What factor(s) do(es) the barrier
potential of a pn junction depend on?
12. Effectively, how many valence
3. Under normal conditions a diode A. type of semiconductive
electrons are there in each atom within a
conducts current when it is material
silicon crystal?
B. the amount of doping
C. 8
B. forward-biased. C. the temperature
13. The boundary between p-type D. all of the above
4. A diode conducts when it is forward- material and n-type material is called. E. type of semiconductive
biased, and the anode is connected to C. a pn junction. material and the amount of
the through a limiting resistor. doping but not the temperature
14. You have an unknown type of diode
A. positive supply
in a circuit. You measure the voltage 19. An atom is made up of
5. As the forward current through a across it and find it to be 0.3 V. The A. protons.
silicon diode increases, the internal diode might be B. neutrons.
resistance B. a germanium diode. C. electrons.
B. decreases. D. all of the above
6. The movement of free electrons in a 20. Reverse breakdown is a condition in
conductor is called which a diode
B. current. A. is subjected to a large reverse
7. For a forward-biased diode, the barrier voltage.
potential as temperature 21. There is a small amount of current
increases. across the barrier of a reverse-biased
A. decreases diode. This current is called

15. An ideal diode presents a(n)

when reversed-biased and a(n)
8. The wide end arrow on a schematic when forward-biased. D. reverse leakage current.
indicates the of a diode. A. open, short
D. anode 22. As the forward current through a
silicon diode increases, the voltage
across the diode
 INDIABIX 1
C. is relatively constant. C. the value of dc voltages for
the device to operate
properly.
23. Doping of a semiconductor material
means
C. that impurities are added to
decrease the resistance of
SPECIAL- PURPOSE A. increase.
the material.
DIODES 7. What kind of diode is formed by
joining a doped semiconductor region
24. The forward voltage across a
1. Schottky diodes are also known as with a metal?
conducting silicon diode is about
A. laser
B. hot carrier diodes. B. tunnel
D. 0.7 V.
C. pin
25. The most common type of diode 2. Zener diodes with breakdown D. Schottky
failure is a(n) . voltages less than 5 V operate
predominantly in what type of 8. Refer to this figure. Which symbol is
A. open
breakdown? correct for a zener diode?
26. What occurs when a conduction-
band electron loses energy and falls B. zener
back into a hole in the valence band?
3. The Schottky diode is used
B. recombination C. in very fast-switching circuit
4. You have an application for a diode to B. b
27. The maximum number of electrons in be used in a tuning circuit. A type of
diode to use might be. 9. Which diode employs graded doping?
each shell of an atom is
D. a varactor. D. step-recovery
B. 2n2 where n is the number of 5. Refer to this figure. Which symbol is 10. Refer to this figure. Identify the
the shell. correct for an LED? Schottky diode.
28. A silicon diode is forward-biased.
You measure the voltage to ground from
the anode at , and the voltage
from the cathode to ground at
.
B. 2.3 V, 1.6 V A. a E. e
29. The term bias in electronics usually 6. Refer to this figure. If VIN increases, IZ 11. LEDs are made out of
means will C. gallium.

12. The normal operating region for a

zener diode is the
 INDIABIX 1
D. reverse-breakdown region. 18. The process of emitting photons B. decrease.
from a semiconductive material is called
13. Refer to this figure. If VIN attempts to 25. Zener diodes with breakdown
C. electroluminescence.
increase, VR will voltages greater than 5 V operate
D.
predominantly in what type of
19. An 8.2 V zener has a resistance of breakdown?
5Ω. The actual voltage across its A. avalanche
terminals when the current is 25 mA is
26. Back-to-back varactor diodes are
.
used for what reason?
A. increase. C. 8.325 V.
C. to eliminate harmonic
14. An LED is forward-biased. The diode 20. What diode operates only with distortion
should be on, but no light is showing. A majority carriers?
27. A tunnel diode is used
possible trouble might be C. Schottky
B. in circuits requiring negative
A. the diode is open. 21. Refer to this figure. Which symbol is resistance.
15. A 6.2 V zener is rated at 1 watt. The correct for a photodiode?
28. What type of diode is commonly
maximum safe current the zener can used in electronic tuners in TVs?
carry is A. varactor
B. 161 mA.
29. A laser diode normally emits
16. Refer to this figure. Find the tunnel C. coherent and monochromatic
diode symbol. light.
C. c
22. What type of diode maintains a 30. A varactor is a pn junction diode that
constant current? always operates in -bias and is
C. current regulator
23. What diode is used in seven-segment
D. d displays?
doped to the inherent
17. Refer to this figure. If the load current B. LED capacitance of the depletion region.
increases, IR will and IZ will . 24. Refer to this figure. If VIN decreases, B. reverse, maximize
IR will

BIPOLAR JUNCTION
TRANSISTORS
D. remain the same, decrease 1. Refer to this figure. Determine the
minimum value of IB that will produce
saturation.
 INDIABIX 1
D. –9.2 V 14. Refer to this figure. The value of VBE
is:
7. When a transistor is used as a switch,
it is stable in which two distinct regions?
C. saturation and cutoff
8. The term BJT is short for
D. bipolar junction transistor

D. 10.425 µA 9. For a silicon transistor, when a base-

emitter junction is forward-biased, it has
2. A transistor amplifier has a voltage a nominal voltage drop of B. 0.7 V
gain of 100. If the input voltage is 75 mV, A. 0.7 V.
the output voltage is: 15. What are the two types of bipolar
B. 7.5 V 10. A certain transistor has IC = 15 mA junction transistors?
and IB = 167µA; βDC is: A. npn and pnp
3. Refer to this figure. If VCE = 0.2 V, IC(sat) D. 90
is: 16. In this circuit βDC= 100 and VIN = 8 V.
11. Refer to this figure. The value of VCE The value of RB that will produce
is: saturation is:

B. 2.085 mA
A. 9.9 V A. 92 kΩ
4. What is the ratio of IC to IB?
A. βDC 12. What does βDC vary with? 17. The value of βDC
B. hFE A. IC D. varies with temperature and
C. αDC B. ºC IC.
C. both IC and ºC
D. either βDC or hFE, but not αDC 18. A transistor data sheet usually
5. For normal operation of a pnp BJT, the identifies βDC as
base must be with respect to
the emitter and with respect B. hFE.
to the collector.
C. negative, positive

6. Refer to this figure. The value of VBC is:

C. IC , but not ºC

13. A BJT has an IB of 50µA and a βDC of 19. What is the ratio of IC to IE?
D. either βDC / (βDC + 1) or αDC, but
75; IC is:
not βDC
C. 3.75 mA
 INDIABIX 1
20. Refer to this figure. The value of βDC 27. What is (are) common fault(s) in a 4. For what kind of amplifications can
= 100 and VIN = 8 V. Determine IC(sat). BJT-based circuit? the active region of the common-
A. opens or shorts internal to the emitter configuration be used?
transistor A. Voltage
B. open bias resistor(s) B. Current
C. external opens and shorts on C. Power
the circuit board D. All of the above
D. all of the above
5. In the active region, while the
28. The dc load line on a family of collector-base junction is -
B. 7.92 mA
collector characteristic curves of a biased, the base-emitter is -
21. Which of the following is true transistor shows the biased.
for an npn or pnp transistor? A. saturation region. C. reverse, forward
A. IE = IB + IC B. cutoff region.
C. active region. 6. A transistor can be checked using a(n)
D. all of the above
29. Refer to this figure. Determine the
minimum value of VIN from the following .
that will saturate this transistor. A. curve tracer
B. digital meter
22. What is the order of doping, from C. ohmmeter
heavily to lightly doped, for each region? D. Any of the above
7. What range of resistor values would
B. emitter, collector, base
you get when checking a transistor for
23. In what range of voltages is the forward- and reverse-biased conditions
transistor in the linear region of its by an ohmmeter?
operation? A. 100 to a few kΩ, exceeding
B. 0.7 < VCE < VCE(max) A. 13.21 V 100 kΩ
24. The magnitude of dark current in a 8. Calculate minority current ICO if IC =
phototransistor usually falls in what 20.002 mA and IC majority = 20 mA.
range? D. 2 µA
C. nA
BJT DEVICES
9. What is (are) the component(s) of
25. A 35 mV signal is applied to the base 1. How much is the base-to-emitter electrical characteristics on the
of a properly biased transistor with an r'e voltage of a transistor in the "on" state? specification sheets?
= 8 and RC = 1 k. The output signal A. On
voltage at the collector is: B. Off
B. 0.7 V
D. 4.375 V C. Small-signal characteristics
2. How many layers of material does a D. All of the above
26. What is (are) general-purpose/small- transistor have?
signal transistors case type(s)? C. 3 10. In which region are both the
A. TO-18 collector-base and base-emitter
B. TO-92 junctions forward-biased?
C. TO-39 3. Which of the following equipment can C. Saturation
D. TO-52 check the condition of a transistor?
E. all of the above A. Current tracer
B. Digital display meter (DDM)
C. Ohmmeter (VOM)
D. All of the above
 INDIABIX 1
11. An example of a pnp silicon transistor C. Common-emitter
is a 2N4123.
B. False
25. βdc for this set of collector
12. Which of the following is (are) the characteristics is within
terminal(s) of a transistor? percent of βac.
A. Emitter
B. Base
C. Collector D. 110
D. All of the above 19. Which of the following can be
13. Use this table of collector obtained from the last scale factor of a
characteristics to calculate βac at VCE = 15 curve tracer?
V and IB = 30 µA. D. βac
20. Calculate βac for IC = 15 mA and VCE = D. 10
5 V. 26. Which of the following regions is
(are) part of the output characteristics of
a transistor?
A. Active
B. Cutoff
C. Saturation
A. 100 D. All of the above
14. Which of the following 27. How many individual pnp silicon
configurations can a transistor set up? transistors can be housed in a 14-pin
A. Common-base plastic dual-in-line package?
B. Common-emitter A. 4
C. Common-collector A. 200
D. All of the above 28. In what decade was the first
transistor created?
15. What does a reading of a large or
B. 1940s
small resistance in forward- and reverse-
biased conditions indicate when 21. βdc = 29. Most specification sheets are broken
checking a transistor using an C. IC / IB down into .
ohmmeter? D. A. maximum ratings
A. Faulty device A.
22. How 1many carriers participate in the B. thermal characteristics
injection process of a unipolar device? C. electrical characteristics
16. Determine the value of α when β =
C. 0.99 D. All of the above
100.

30. For a properly biased pnp transistor,

23. What are the ranges of the ac input let IC = 10 mA and IE = 10.2 mA. What is
17. Transistors are -terminal and output resistance for a common- the level of IB?
devices. base configuration? C. 200 µA
A. 10Ω–100Ω , 50 kΩ –1 MΩ
31. What is (are) the component(s) of
B. 3 24. What is the most frequently most specification sheets provided by
18. Calculate βdc at VCE = 15 V and IB = 30 encountered transistor configuration? the manufacturer?
µA.
 INDIABIX 1
A. Maximum ratings 10. What is the most important r
B. Thermal characteristics parameter for amplifier analysis?
C. Electrical characteristics C. r e′
D. All of the above
11. An emitter-follower is also known as:
32. What is βdc equal to? C. common-collector amplifier.
C. IC / IB
12. The model fails to account
33. List the types of bipolar junction for the output impedance level of the
transistors. device and the feedback effect from
B. pnp, npn D. 6 mA output to input.
5. Which of the following is referred to as B. re
34. What is the ratio of the total width to
that of the center layer for a transistor? the reverse transfer voltage ratio? 13. Refer to this figure. Calculate the
D. 150:1 B. hr value of VB.
6. Which of the following conditions
35. Which component of the collector
must be met to allow the use of the
current IC is called the leakage current?
approximate approach in a voltage-
C. Minority
divider bias configuration?
D. βre < 10R2

BJT AMPLIFIERS 7. Refer to this figure. Determine the

value of Av.
1. The current gain for the Darlington
connection is .
B. β1· β2 B. 3.7 V
2. Which of the following configurations 14. You have a need to apply an
has the lowest output impedance? amplifier with a very high power gain.
C. Emitter-follower Which of the following would you
choose?
3. Which of the h-parameters
corresponds to re in a common-base C. common-emitter
configuration? 15. What is the voltage gain of a
A. hib B. 5 feedback pair connection?
A. 1
8. For a common-emitter amplifier, the
purpose of swamping is 16. A common-emitter amplifier has

B. to reduce the effects of r'e

9. What is the typical value of the
configuration?
A. Less than 1 gain, power gain, and
4. Refer to this figure. Find the value of B. input impedance.
IE.
 INDIABIX 1
B. high, high, high, low A. The output and input voltages D. the difference of the two input
are 180º out of phase. voltages.
17. What is the range of the input
24. For the common-emitter fixed-bias
30. The model suffers from
impedance of a common-base
configuration, there is a phase shift
being limited to a particular set of
configuration?
between the input and output signals.
operating conditions if it is to be
A. A few ohms to a maximum of considered accurate.
50 Ω A. hybrid equivalent
18. The advantage that a Sziklai pair has 31. Under which of the following
condition(s) is the current gain Av ≈ β ?
D. 180º
over a Darlington pair is
B. less input voltage is needed to 25. Which one of the following
turn it on. configurations has the lowest input C. ro 10RC and RB 10re
impedance?
B. Common-base 32. The configuration is
frequently used for impedance
19. What is the typical range of the matching.
output impedance of a common-emitter 26. Which of the following represent(s) C. emitter-follower
configuration? the advantage(s) of the system
C. 40 kΩ to 50 kΩ approach over the r-model approach?
D. A. Thevenin's theorem can be 33. Refer to this figure. You notice while
used. servicing this amplifier that the output
20. What is the unit of the parameter ho? signal at Vout is reduced from normal.
B. The effect of changing the load
C. Siemen The problem could be caused by
can be determined by a
simple equation.
21. Refer to this figure. Calculate the C. There is no need to go back to
value of Rin(tot). the ac equivalent
model and analyze the entire
network.
D. All of the above
27. The differential amplifier has
C. two inputs and one output.
28. The emitter-follower configuration B. an open C2.
has a impedance at the input
and a impedance at the
34. When the bypass capacitor is
B. 3.77 kΩ output.
removed from a common-emitter
22. What is the range of the current gain C. high, low
amplifier, the voltage gain
B. decreases.
for BJT transistor amplifiers? 29. The differential amplifier produces
35. Refer to this figure. Determine the
A. less than 1 outputs that are
value of VC.
B. 1 to 100
C. above 100
D. All of the above
23. What does the negative sign in the
voltage gain of the common-emitter
fixed-bias configuration indicate?
 INDIABIX 1
46. In an un-bypassed emitter bias
configuration hie replaces in
the re model.
C. βre
47. Which of the following is (are) true
regarding the input impedance for
frequencies in the midrange 100 kHz of a
BJT transistor amplifier?
A. The input impedance is purely
C. 5V A. 416 Ω resistive.
36. In a common-base amplifier, the 41. Under which of the following B. It varies from a few ohms to
input signal is connected to the conditions is the output impedance of megohms.
C. emitter. the network approximately equal to RC C. An ohmmeter cannot be used
for a common-emitter fixed-bias to measure the small-
37. Which of the following is (are) true to configuration? signal ac input impedance.
achieve a good overall voltage gain for A. ro 10RC D. All of the above
the circuit?
B. The effect of Rs and RL must 42. Which of the following gains is less 48. For the collector dc feedback
be considered as a than 1 for a common-base configuration, there is a phase
product and evaluated configuration? shift between the input and output
individually. A. Ai signals.
D. 180º
38. To analyze the common-emitter 43. Which of the following define(s) the
amplifier, what must be done to conversion efficiency? 49. A common-collector amplifier has
determine the dc equivalent circuit? input resistance,
B. replace coupling and bypass B. Ac power to the load/dc power current gain, and voltage gain.
capacitors with opens supplied A. high, high, low

39. For the common-emitter amplifier ac 44. The dc emitter current of a transistor 50. The total gain of a multistage
equivalent circuit, all capacitors are is 8 mA. What is the value of re? amplifier is the .
A. effectively shorts. C. 3.125 Ω
B. sum of dB voltage gains
40. Refer to this figure. If an emitter 45. Which of the following should be
bypass capacitor was installed, done to obtain the ac equivalent of a 51. Which of the following
determine the value of Rin(base). network? configurations has an output impedance
A. Set all dc sources to zero Zo equal to RC?
B. Replace all capacitors by a A. Fixed-bias common-emitter
short-circuit equivalent. B. Common-emitter voltage-
C. Remove all elements bypassed divider with bypass
by the short-circuit capacitor
equivalent. C. Common-emitter voltage-
D. All of the above divider without bypass
capacitor
D. All of the above
52. Refer to this figure. Find the value of
Rin(base).
 INDIABIX 1
58. Which of the following is (are) true 64. The input impedance of a BJT
regarding the output impedance for amplifier is purely in nature
frequencies in the midrange 100 kHz of a and can vary from a few to
BJT transistor amplifier? .
A. The output impedance is purely A. resistive, ohms, megohms
resistive.
65. The the source resistance
B. It varies from a few ohms to
and/or the load resistance, the
more than 2 MΩ.
less the overall gain of an amplifier.
C. An ohmmeter cannot be used
C. larger, smaller
to measure the small-
B. 50 kΩ
signal ac output impedance.
53. For a common-emitter amplifier, the D. All of the above 66. Refer to this figure. If an emitter
purpose of the emitter bypass capacitor bypass capacitor was installed, what
59. Refer to this figure. The output signal
is would the new Av be?
from the first stage of this amplifier is 0
D. to maximize amplifier gain.
V. The trouble could be caused by
54. For BJT amplifiers, the gain
typically ranges from a level just less
than 1 to a level that may exceed 1000.
B. current
55. The loaded voltage gain of an
amplifier is always more than the no-
load level.
B. False
56. Which of the following D. 600
C. an open base-emitter of Q1.
configurations has a voltage gain of –RC
D. 67. A Darlington pair provides beta
/re?
for input resistance.
C. Fixed-bias common-emitter 60. What is the limit of the efficiency
B. multiplication, increased
and voltage-divider with defined by = Po / Pi?
bypass capacitor 68. A Darlington pair amplifier has
B. Less than 1
D. a low voltage gain and a high
61. What is re equal to in terms of h
input impedance.
parameters?
57. An emitter-follower amplifier has an A. hre / hoe
input impedance of 107 kΩ. The input
62. What is the controlling current in a FET DEVICES
signal is 12 mV. The approximate output
common-base configuration?
voltage is (common-collector)
A. Ie 1. Which of the following ratings
C. 12 mV
63. Which of the following techniques appear(s) in the specification sheet for
can be used in the sinusoidal ac analysis an FET?
of transistor networks? A. Voltages between specific
C. Small- or large-signal terminals
B. Current levels
 INDIABIX 1
C. Power dissipation A. 0.25 14. The drain current will always be one-
D. All of the above fourth of IDSS as long as the gate-to-
9. Referring to this transfer curve,
source voltage is the pinch-off
2. What is the level of drain determine ID at VGS = 2 V.
value.
current ID for gate-to-source voltages
B. one-half
VGS less than (more negative than) the
pinch-off level? 15. The transfer curve is not defined by
A. zero amperes Shockley's equation for the .
C. enhancement-type MOSFET
3. What is the level of IG in an FET?
A. Zero amperes 16. What is the purpose of adding two
Zener diodes to the MOSFET in this
4. What is the range of an FET's
figure?
input impedance? A. 0.444 mA
D. 1 MΩ to several hundred MΩ
10. Which of the following controls the
5. Which of the following applies to a level of ID?
safe MOSFET handling? A. VGS
A. Always pick up the transistor by 11. It is the insulating layer of
the casing. in the MOSFET construction that
B. Power should always be off accounts for the very desirable high
when network changes are made. input impedance of the device.
C. Always touch ground before C. SiO2 B. To protect the MOSFET for
handling the device. both polarities
D. All of the above 12. The BJT is a device. The FET is a
device. 17. Referring to the following transfer
6. Refer to this portion of a specification B. bipolar, unipolar curve, determine the level of VGS when
sheet. Determine the values of reverse- the drain current is 20 mA.
gate-source voltage and gate current if 13. Referring to this transfer curve.
the FET was forced to accept it. Calculate (using Shockley's equation)
VGS at ID = 4mA.

A.
B. –25 Vdc, 10 mAdc
A. 1.66 V
7. At which of the following condition(s) B. –2.54 V
is the depletion region uniform? 18. The region to the left of the pinch-off
A. No bias locus is referred to as the
region.
8. What is the ratio of ID / IDSS for
VGS = 0.5 VP?
 INDIABIX 1
C. ohmic A. Reduced channel resistance
B. Higher current and power
ratings
19. Refer to the following curves.
D. 3 or 4 C. Faster switching time
Calculate ID at VGS = 1 V.
D. All of the above
25. Refer to the following figure.
Calculate VGS at ID = 8 mA for k = 0.278 × 32. Hand-held instruments are available
10–2 A/V2. to measure for the BJT.
A. βDC
33. Which of the following input
impedances9 is not valid for a JFET?

A. 3.70 V
The level of VGS that results in ID = 0 mA C. 108 Ω
is defined by VGS = . 34. Refer to the following characteristic
B. VP curve. Calculate the resistance of the
26. Which of the following FETs has the FET at VGS = –0.25 V if ro = 10 kΩ.
lowest input impedance?
B. 4.167 mA A. JFET

20. Which of the following transistor(s) 27. Which of the following applies
has (have) depletion and enhancement to MOSFETs?
types? A. No direct electrical connection
C. MOSFET between the gate
terminal and the channel
B. Desirable high input impedance
21. The three terminals of the JFET are D. 11.378 kΩ
C. Uses metal for the gate, drain,
the , , and . and source connections 35. Which of the following is (are)
C. gate, drain, source D. All of the above not an FET?
D. C. p-n channel
28. At which of the following is the level
22. Which of the following is (are) the of VDS equal to the pinch-off voltage?
terminal(s) of a field-effect transistor A. When ID becomes equal to IDSS
(FET). B. When VGS is zero volts
D. All of the above
FET AMPLIFIERS
C. IG is zero
23. A BJT is a -controlled D. All of the above
1. A common-gate amplifier is similar in
device. The JFET is a - 29. Which of the following represent(s) configuration to which BJT amplifier?
controlled device. the cutoff region for an FET? C. common-base
C. current, voltage A. ID = 0 mA 2. The theoretical efficiency of a class D
24. How many terminals can a MOSFET B. VGS = VP amplifier is
have? C. IG = 0 D. 100%.
D. All of the above
30. Which of the following is (are) the
advantage(s) of VMOS over MOSFETs?
 INDIABIX 1
3. A common-source amplifier is similar
in configuration to which BJT amplifier? B. common-collector
C. common-emitter
9. Referring to this figure, calculate Av
for yos = 58µS.
4. Refer to this figure. If R6 opened, the
signal at the drain of Q1 would

A. 176 mV p-p
14. Referring to the following figure,
calculate gm for VGSQ = –1.25 V.
C. remain the same.
A. –7.29
5. Refer to this figure. Find the value of
VD. 10. Refer to this figure. If Vin = 1 V p-p, the
output voltage Vout would be

C. 2.75 mS

15. Referring to this figure, calculate the

value of RD if the ac gain is 10. Assume
D. 9V VGSQ = ¼Vp.
A. undistorted.
6. A BJT is a -controlled device.
11. Use the following equation to
A. current
calculate gm for a JFET having IDSS = 10
7. Referring to this figure, calculate Av if mA, VP = –5 V, and VGSQ = –2.5 V.
rd = 19 kΩ. A. 2.2 kΩ
B. 2.42 kΩ
[ ] C. 2.62 kΩ
| |
A. 2 mS D. 2.82 kΩ
16. Where do you get the level of gm and
rd for an FET transistor?
A. from the dc biasing
12. For what value of ID is gm equal to 0.5 arrangement
gm0? B. from the specification sheet
A. –2.85 B. 0.25 IDSS
B. –3.26 C. from the characteristics
C. –2.95 13. Refer to this figure. If Vin = 20 mV p-p D. All of the above
D. –3.21 what is the output voltage? 17. The class D amplifier uses what type
8. A common-drain amplifier is similar in of transistors?
configuration to which BJT amplifier?
 INDIABIX 1

C. MOSFETs

18. What is (are) the function(s) of the

coupling capacitors C1 and C2 in an FET
circuit?
A. to create an open circuit for dc
analysis
B. to isolate the dc biasing
arrangement from the applied
B. 1.92 kΩ
signal and load
C. to create a short-circuit 24. Which of the following is a required
B. 3 mS
equivalent for ac analysis condition to simplify the equations for
D. All of the above Zo and Av for the self-bias configuration? 31. Which type of FETs can operate with
C. rd ≥ 10RD a gate-to-source Q-point value of 0 V?
19. An FET is a -controlled
C. D-MOSFET
device. 25. The steeper the slope of the ID versus
B. voltage VGS curve, the the level of gm. 32. On which of the following
C. greater parameters does rd have no or little
20. What is the input resistance
impact in a source-follower
(Rin(source)) of a common-gate amplifier? 26. What is the typical value for the
configuration?
C. 1 / gm input impedance Zi for JFETs?
A. Zi
D. 1000 MΩ
B. Zo
21. There is a º phase inversion 27. MOSFETs make better power C. Av
between gate and source in a source switches than BJTs because they have D. All of the ab@ove
follower. A. lower turn-off times.
33. Refer to this figure. For midpoint
A. 0 B. lower on-state resistance.
biasing, ID would be
C. a positive temperature
coefficient.
D. all of the above
22. Refer to this figure. If C4 opened, the 28. When VGS = 0.5 Vp gm is _ the
signal voltage at the drain of Q1 would maximum value.
B. one-half
29. MOSFET digital switching is used to
produce which digital gates?
A. inverters
B. NOR gates
C. NAND gates
C. 5 mA.
D. all of the above
34. Class D amplifiers differ from all
30. Referring to the transfer
C. remain the same. other classes of amplifiers because
characteristics shown below, calculate A. the output transistors are
23. Referring to this figure, find Zo if yos = gm at VGSQ = –1 V. operated as switches.
20µS.
 INDIABIX 1
35. Refer to this figure. If R7 were to A. 100 kΩ
decrease in value, Vout would
40. Referring to this figure, calculate Zo
if rd = 19 kΩ.

D. 480.9 Ω
45. The more horizontal the
B. decrease. characteristic curves on the drain
36. Refer to this figure. If ID = 4 mA, find characteristics, the the output
B. 1.81 kΩ
the value of VGS. impedance.
41. Referring to this figure, calculate Zi if C. greater
rd = 19 kΩ.
46. Refer to this figure. If gm = 4000 mS
and a signal of 75 mVrms is applied to the
gate, calculate the p-p output voltage.

D. –6 V C. 2.53 MΩ
37. Which FET amplifier(s) has (have) a 42. For the fixed-bias configuration, if rD
phase inversion between input and C. 2.8 V p-p
output signals?
C. common-source < 10 RD , then Zo = .
B. RD || rD 47. Refer to this figure. The approximate
value of Rin is
38. What common factor determines the 43. Referring to this figure, obtain gm for
voltage gain and input resistance of a ID = 6 mA.
common-gate amplifier?
C. gm
39. Referring to the figure below,
determine the output impedance for VGS
= –3 V at VDS = 5 V.

D. 3.46 mS
A. 100 MΩ.
44. Referring to this figure, calculate Zo
for VGSQ = –3.2 V. 48. Which of the following is (are)
related to depletion-type MOSFETs?
A. VGSQ can be negative, zero, or
positive.
 INDIABIX 1
B. gm can be greater or smaller B. high input impedance
than gm0. C. low power consumption
C. ID can be larger than IDSS. D. All of the above
D. All of the above
54. CMOS digital switches use
49. Refer to this figure. If C2 shorted, Vout C. n-channel and p-channel E-
would MOSFETs in series.
55. What is the range of gm for JFETs?
C. 1000 µS to 5000 µS
56. Calculate gm and rd if yfs = 4 mS and
yos = 15ΩS. B. 1.2 kΩ
A. 4 mS, 66.7 kΩ 61. A JFET cascade amplifier employs
57. What limits the signal amplitude in C. 1 common-gate and 1
an analog MOSFET switch? common-source amplifier.
.
D. distort. B. VGS(th) 62. E-MOSFETs are generally used in
58. Input resistance of a common-drain switching applications because
50. The input resistance at the gate of a
amplifier is B. of their threshold
FET is extremely
A. RG || RIN(gate). characteristic (VGS(th)).
A. high.
63. For an FET small-signal amplifier,
51. Determine the value for RD if the ac
one could go about troubleshooting a
gain is 8.
circuit by .
A. viewing the circuit board for
poor solder joints
B. using a dc meter

B. 1.65 kΩ
59. Refer to this Figure. If Vin was C. applying a test ac signal
52. Referring to this figure, calculate Zi increased in amplitude a little, the signal D. All of the above
for yos = 20 µS. Assume VGSQ = −2.2V. voltage at the source of Q2 would
64. The E-MOSFET is quite popular in
applications.
A. digital circuitry
B. high-frequency
C. buffering
D. All of the above
65. Referring to this figure, calculate Av if
yos = 20 µS.
C. remain the same.
B. 330.4 Ω 60. Refer to this figure. If VGS = –6 V,
53. FET amplifiers provide . calculate the value of RS that will provide
A. excellent voltage gain this value.
 INDIABIX 1

C. 238.73 Hz
C. –3.62 C. 10.8 V
5. The smaller capacitive elements of the
66. Referring to this figure, calculate Zo 70. If ID = IDSS / 2, gm = gmo. design will determine the
if yos = 40µS. B. 0.707 cutoff frequencies.
C. high
6. What is the range of the capacitor Cds?
BJT AND FET FREQUENCY B. 0.1 to 1 pF
RESPONSE 7. An amplifier rated at 30-W output is
connected to a 5- speaker. Calculate the
1. A change in frequency by a factor of input voltage for the rated output if the
is equivalent to 1 octave. amplifier voltage gain is 20 dB.
A. 2 D. 1.225 V
A. 2.92 kΩ 2. What is the ratio of the capacitive
reactance XCS to the input resistance RI
67. In a common-source amplifier, the
of the input RC circuit of a single-stage
purpose of the bypass capacitor, C2, is to
A. keep the source effectively at
ac ground. BJT amplifier at the low-frequency 8. A 3-dB drop in h will occur at a
fe
B. . cutoff? frequency defined by .
68. Refer to this figure. The voltage gain D. 1.0 B. fβ
is

3. For which of the following frequency 9. An amplifier rated at 30-W output is

region(s) can the coupling and bypass connected to a 5- speaker. Calculate the
capacitors no longer be replaced by the input power required for full power
short-circuit approximation? output if the power gain is 20 dB.
A. Low-frequency C. 300 mW
4. Determine the lower cutoff frequency 10. The larger capacitive elements of the
of this network. design will determine the
cutoff frequency.
D. 8.8. A. low
69. Refer to this figure. If ID = 4 mA, IDSS = 11. Which of the following elements is
16 mA, and VGS(off) = –8 V, find VDS. (are) important in determining the gain
of the system in the high-frequency
region?
A. Interelectrode capacitances
B. Wiring capacitances
C. Miller effect capacitance
D. All of the above
12. The input power to a device is 10,000
W at 1000 V. The output power is 500 W,
and the output impedance is 100Ω. Find
the voltage gain in decibels.
 INDIABIX 1
C. –13.01 dB 27. In the hybrid π or Giacoletto model,
20. Determine the break frequency for
which one of the following does rb
13. By what factor does an audio level this circuit.
include?
change if the power level changes from
A. Base spreading resistance
4 W to 4096 W?
B. Base contact
C. 6
C. Base bulk
14. For audio systems, the reference D. All of the above
level is generally accepted as .
28. What is the ratio of the output
A. 1 mW
voltage to the input voltage at the cutoff
15. What is the range of the capacitors frequencies in a normalized frequency
Cgs and Cgd? B. 159.15 Hz response plot?
A. 1 to 10 pF 21. What is the ratio of the common
logarithm of a number to its natural
16. For the low-frequency response of a logarithm? C. 0.707
BJT amplifier, the maximum gain is
where .
29. Which of the following statements is
C. RE = 0 Ω C. 2.3 true for a square-wave signal?
17. In the input RC circuit of a single- B. It is composed only of odd
stage BJT, by how much does the base 22. Which of the following harmonics.
voltage lead the input voltage at the configurations does (do) not involve the
cutoff frequency in the low-frequency 30. A change in frequency by a factor of
Miller effect capacitance? is equivalent to 1 decade.
region? B. Common-base
B. 45º B. 10
23. What magnitude voltage gain 31. Which of the following capacitors is
18. What is the normalized gain corresponds to a decibel gain of 50?
expressed in dB for the cutoff (are) included in Ci for the high-
frequencies? frequency region of a BJT or FET
B. 316.228 amplifier?
A. –3 dB
A. Input wiring capacitance Cw1
19. Which of the low-frequency cutoffs B. The transition capacitance (Cbe /
determined by CS, CC, or CE will be the Cqs)
predominant factor in determining the 24. By what other name(s) are the cutoff C. Miller capacitance CM1
low-frequency response for the frequencies in a frequency response plot D. All of the above
complete system? called? 32. In the input RC circuit of a single-
C. highest A. Corner frequency stage BJT, by how much does the base
B. Break frequency voltage lead the input voltage for
C. Half-power frequency frequencies much larger than the cutoff
D. All of the above frequency in the low-frequency region?
A. About 0º
25. The -frequency response of
a transformer-coupled system is 33. In the -frequency region,
calculated primarily by the stray the capacitive elements of importance
capacitance between the turns of the are the interelectrode (between
primary and secondary windings. terminals) capacitances internal to the
C. high active device and the wiring capacitance
between the leads of the network.
26. logea = log10a
A. 2.3
 INDIABIX 1
C. high The output voltage is most likely to be
D. comparator
11. Refer to the given figure. If Vin = 5 V,
34. What is the ratio of the output power the rate of change of the output voltage
to the input power at the cutoff in response to a single pulse input is:
frequencies in a normalized frequency
response plot?
B. 0.50
B. a triangle wave.
6. Refer to the given figure. What is the
BASIC OP AMP CIRCUITS output voltage?
C. 1.52 mV/μs
1. A Schmitt trigger is 12. In a flash A/D converter, the priority
B. a comparator with hysteresis. encoder is used to
2. Refer to the given figure. This circuit is
known as D. –Vsat B. select the highest value input.
7. If an op-amp comparator has a gain of 13. What circuit produces an output that
100,000, an input difference of 0.2 mV approximates the area under the curve
above reference, and a supply of ± 12 V, of an input function?
the output will be A. integrator
B. 12 V. 14. An op-amp has an open-loop gain of
C. an integrator. 8. A comparator with a Schmitt trigger 90,000. Vsat = ±13 V. A differential
has voltage of 0.1 Vp-p is applied between the
3. The output of a Schmitt trigger is a
A. two trigger levels. inputs. What is the output voltage?
A. pulse waveform.
D. 26 Vp-p
4. Refer to the given figure. This circuit is 9. Refer to the given figure. Determine
the upper trigger point. 15. Refer to the given figure. Determine
known as
the output voltage.

B. a differentiator. C. +Vsat

5. Refer to the given figure. A square- D. +1.41 V 16. A good example of hysteresis is a(n)
wave input is applied to this amplifier. B. thermostat.
10. In a(n) , when the input
voltage exceeds a specified reference
voltage, the output changes state.
 INDIABIX 1
17. To reduce the effects of noise
resulting in erratic switching of output B. nonzero-level detector C. zener
states of a comparator, you can use
23. A differentiator is used to measure 29. A comparator with hysteresis is
D. hysteresis.
sometimes known as a(n)
18. Refer to the given figure. With the C. Schmitt trigger.
inputs shown, determine the output
voltage.
30. Which of the following are variations
D. the rate of change of the input
of the basic summing amplifier?
voltage.
C. both of the above
24. Refer to the given figure. Determine
the lower trigger point.

C. +Vsat
SEMICONDUCTOR DIODES
19. Refer to the given figure. Determine
the output voltage, VOUT. 1. One eV is equal to J.
B. 1.6 × 10–19
2. The diode .
A. is the simplest of
C. –2.47 V semiconductor devices
B. has characteristics that closely
25. A(n)

amplifier is a
summing amplifier with a closed-loop match those of a simple switch
gain equal to the reciprocal of the C. is a two-terminal device
A. 1.05 V number of inputs. D. All of the above
A. averaging
20. What is (are) the necessary 3. It is not uncommon for a germanium
component(s) for the design of a 26. is a mathematical process diode with an Is in the order of 1–2 µA at
bounded comparator? for determining the rate of change of a 25°C to have leakage current of 0.1 mA
B. zener diodes function. at a temperature of 100°C.
A. True
21. Refer to the given figure. What is the B. Differentiation
output voltage? 4. What does a high resistance reading in
27. An integrator circuit both forward- and reverse-bias
C. uses a capacitor in its directions indicate?
feedback circuit. B. An open diode
D.
5. Which capacitance dominates in the
28. In a comparator with output reverse-bias region?
bounding, what type of diode is used in A. depletion
the feedback loop?
B. –0.5 V 6. What is the state of an ideal diode in
22. What type(s) of circuit(s) use the region of nonconduction?
comparators? A. An open circuit
 INDIABIX 1
15. Which of the following devices can
7. How many orbiting electrons does the
check the condition of a semiconductor
germanium atom have? 24. Which of the following elements is
diode?
most frequently used for doping pure Ge
A. Digital display meter (DDM)
or Si?
B. Multimeter
C. 32 A. Boron
C. Curve tracer
B. Gallium
D. All of the above
C. Indium
8. How many terminals does a diode
16. Which of the following is an atom D. All of the above
have?
composed of?
B. 2 25. Calculate the temperature
A. Electrons
coefficient in %/° C of a 10-V nominal
9. What unit is used to represent the B. Protons
Zener diode at 25° C if the nominal
level of a diode forward current IF? C. Neutrons
voltage is 10.2 V at 100° C.
D. mA D. All of the above
C. 0.0267
10. The diffused impurities with 17. The condition of a semiconductor
26. In general, LEDs operate at voltage
valence electrons are called diode can be determined quickly using a
levels from V to V.
donor atoms. .
B. 1.7, 3.3
A. DDM
B. VOM 27. Determine the nominal voltage for
C. 5 C. curve tracer the Zener diode at a temperature of
D. Any of the above 120° C if the nominal voltage is 5.1 volts
at 25° C and the temperature coefficient
11. In which of the following color(s) is 18. How many valence electrons does a
is 0.05%/° C.
(are) LEDs presently available? silicon atom have?
D. 5.34 V
A. Yellow
B. White 28. What is the maximum power rating
C. Orange for LEDs?
D. All of the above D. 4
19. What is the resistor value of an ideal
diode in the region of conduction?
A. 0Ω
20. Calculate the power dissipation of a
12. Determining rd to a high degree of
accuracy from a characteristic curve is diode having ID = 40 mA. A. 150 mW
A. 28 mW
very accurate.
B. False 29. The _

diode model is
13. What is the range of the operating
voltage level for LEDs? 21. Calculate static resistance RD of a employed most frequently in the
diode having ID = 30 mA and VD = 0.75 V. analysis of electronic systems.
A. 25 B. simplified
B. 1.7–3.3 V
22. In which of the following is the light 30. What is the value of the transition
14. At what kind of operating frequency
intensity measured? capacitance for a silicon diode when VD =
diffusion or transition is a capacitor
A. Candela 0? (Choose the best answer.)
represented in parallel with the ideal
B. 3 pF
diode? 23. Calculate ID if RD = 30 and VD = 0.84 V.
D. Very high frequency A. 28 mA 31. Which of the following ratings is
true?
 INDIABIX 1
B. Si diodes have higher PIV and A. clipper or limiter
wider temperature
4. Each diode in a center-tapped full-
ranges than Ge diodes.
wave rectifier is -biased and
conducts for of the input cycle.

B. 15 V
C. forward, 180º
The ideal diode is a(n) circuit 10. In a regulated supply, what term
in the region of nonconduction. 5. What is the voltage measured from describes how much change occurs in
A. open the negative terminal of C4 to the the output voltage for a given change in
negative terminal of the transformer? the input voltage?
32. Which capacitance dominates in the
C. line regulation
forward-bias region?
A. Diffusion 11. A short circuit has a drop
across its terminals, and the current is
33. In what state is a silicon diode if the
limited only by the surrounding network.
voltage drop across it is about 0.7 V?
B. 0V
B. Forward bias B. –20 V
6. The output frequency of a full-wave 12. Determine the peak for both half
rectifier is the input frequency. cycles of the output waveform.
DIODE APPLICATIONS A. one-half
B. equal to
1. Determine the total discharge time for
C. twice
the capacitor in a clamper having C = D. one-quarter
0.01µ F and R = 500 kΩ.
B. 25 ms 7. PIV is which of the following?
A. peak input voltage A. 16 V, –4 V
2. Which element dictates the maximum B. peak inverse voltage
level of source voltage? C. peak immediate voltage 13. What is the peak inverse voltage
D. positive input voltage across each diode in a voltage doubler?
B. 2Vm
8. Determine the peak value of the
current through the load resistor. 14. What is the VRRM (PIV rating) for the
1N4001 rectifier diode?
A. 50 V
B. IZM 15. What type of diode circuit is used to
3. What type of diode circuit is used to add or restore a dc level to an electrical
clip off portions of signal voltages above signal?
or below certain levels?

A. 2.325 mA
9. Determine the peak value of the
output waveform.
 INDIABIX 1
B. clamper 20. What best describes the circuit? 25. If the ac supply is 50 Hz, what will be
the ripple frequency out of the full-wave
16. Determine ID2.
rectifier?
C. 100 Hz
D.
26. How many terminals do the 7800
series fixed positive voltage regulators
have?
B. 3
A. Full-wave rectifier 27. An open circuit can have any voltage
C. 3.393 mA
across its terminals, but the current is
21. What is the PIV for each diode in a
17. What is the logic function of this always .
full-wave center-tapped rectifier? Note:
circuit?
Vp(out) = peak output voltage.
B. 0A
D. 2Vp(out) + 0.7 V
28. Determine ID1.
22. Determine ID2.

C. 14.70 mA A. 0 mA
A. Positive logic AND gate 23. Determine the current level if E = 15 29. Refer to the figure given below.
V and R = 3 kΩ. Which diode arrangement will supply a
18. In a regulated supply, what term
describes how much change occurs in negative output voltage?
the output voltage over a certain range
of load current values, from minimum to
maximum current?
D. load regulation B. 4.76 mA

19. Determine the average value of the 24. Determine V2.

current through the load resistor.

C. c
30. A silicon diode in a half-wave rectifier
has a barrier potential of 0.7 V. This has
the effect of
D. 1.479 mA D. 1.371 V
 INDIABIX 1
A. reducing the peak output
voltage by 0.7 V. B. 10 V
31. What best describes the circuit? 41. The output frequency of a half-wave
rectifier is the input frequency.
D. 2 mA, 4 mA C. equal to
36. In the operation of a half-wave 42. A diode is in the "_ " state if
rectifier with a capacitor-input filter, the the current established by the applied
ripple factor can be lowered by sources is such that its direction matches
C. Clipper the value of the filter capacitor or that of the arrow in the diode symbol,
32. Determine the value of the load the load resistors. and VD ≥ 0.7 V for Si and VD ≥ 0.3 V for
resistor. D. increasing, increasing Ge.
B. on
37. Refer to the figure given below. The
probable trouble, if any, indicated by 43. Determine ID.
these voltages is

B. RL = 5.5 kΩ
33. Use the information provided here to
determine the value of IDQ.
B. 1.893 mA
D. the filter capacitor is shorted. 44. What best describes the circuit?

38. In a particular problem, which mode

has the highest level of IDQ?
A. Ideal
B. Half-wave rectifier
39. Which diode(s) has (have) a zero
level current and voltage drop in the 45. In a voltage-multiplier circuit, the
ideal model? number of diodes is directly proportional
C. Both Si and Ge to the multiplicative voltage factor.
B. 4.3 mA A. True
34. If the ac supply is 60 Hz, what will be
the ripple frequency out of the half-wave 40. Determine V if E = E = 10 V. 46. Rectifiers are commonly used in
o 1 2
rectifier? battery chargers.
C. 60 Hz A. True
47. List the categories of clippers.
35. Calculate IL and IZ. C. Series and parallel
 INDIABIX 1
48. A silicon diode has a voltage to Refer to the figure given below. If the C. the transistor being driven into
ground of –117 V from the anode. The voltmeter across the transformer reads 0 cutoff.
voltage to ground from the cathode is – V, the probable trouble, if any, would be D. all of the above
117.7 V. The diode is
2. Which transistor bias circuit
C. forward-biased.
arrangement provides good stability
using negative feedback from collector
49. Which diode arrangement will supply to base?
a positive output voltage? B. collector-feedback bias
C. an open transformer 3. Refer to the given figure. The most
secondary. probable cause of trouble, if any, from
52. Determine the voltage across the these voltage measurements is
resistor.

A. 0V
A. a
50. What is the logic function of this 53. With this Zener diode in its "on
state," what is the level of IZ for the
circuit?
maximum load resistance?

A. the base-emitter junction is

open.
4. Refer to the given figure. The most
probable cause of trouble, if any, from
D. IZM these voltage measurements is

54. In a voltage regulator network with

fixed RL and R, what element dictates
B. Positive logic OR gate the minimum level of source voltage?
51. Determine the current through each A. VZ
diode if E1 = E2 = 0 V.
TRANSISTOR BIAS
CIRCUITS
1. Clipping is the result of
A. the input signal being too large.
B. the transistor being driven into D. no problems.
saturation. 5. What is the dc input resistance at the
base of a BJT?
A. 4.65 mA
 INDIABIX 1
D. βDCRE 11. What is the Q-point for a fixed-bias A. C. nonconducting.
transistor with IB = 75µ A, βDC = 100, VCC =
6. Which transistor bias circuit provides 16. Which transistor bias circuit
20 V, and RC = 1.5 kΩ?
good Q-point stability with a single- arrangement has poor stability because
polarity supply voltage?
C. VC = 8.75 V its Q-point varies widely with β DC?
A. base bias
C. voltage-divider bias 12. Emitter bias requires
D. both positive and negative
7. Refer to this figure. In the voltage- 17. What is the most common bias
supply voltages.
divider biased npn transistor circuit, if R2 circuit?
opens, the transistor is 13. Refer to this figure. The value of βDC D. voltage-divider
is
18. Refer to the given figure. The most
probable cause of trouble, if any, from
these voltage measurements would be

A. saturated. D. 100.12.

8. Ideally, for linear operation, a 14. Refer to this figure. Assume that
transistor should be biased so that the IC≈IE. Find VE.
Q-point is
D. halfway between cutoff and
saturation.
9. The most stable biasing technique
B. RE is open.
used is the
A. voltage-divider bias. 19. Refer to this figure. Determine IC.
10. Refer to this figure. The value of IB is

D. 2.5 V
15. Refer to this figure. In the voltage-
divider biased npn transistor circuit, if RC
opens, the transistor is

B. 5 mA
B. 50 µA. 20. At saturation the value of VCE is
nearly , and IC = .
A. zero, zero
 INDIABIX 1
C. zero, I(sat) B. cutoff.
21. Voltage-divider bias has a relatively 29. Changes in βDC result in changes in
stable Q-point, as does A. IC.
B. VCE.
B. collector-feedback bias. C. the Q-point.
D. all of the above
22. Refer to this figure. Assume IC≈IE.

DC BIASING BJTs
Determine the value of RC that will allow
1. Calculate VCE.
VCE to equal 10 V. C. 5 mA.
26. Which transistor bias circuit
arrangement provides good Q-point
stability, but requires both positive and
negative supply voltages?
D. emitter bias
27. Refer to this figure. Calculate the
B. 1.5 kΩ current I2. B. 4.52 V
23. The linear (active) operating region 2. For the BJT to operate in the active
of a transistor lies along the load line (linear) region, the base-emitter junction
below and above . must be -biased and the base-
B. saturation, cutoff collector junction must be -
biased.
24. The input resistance of the base of a B. forward, reverse
voltage-divider biased transistor can be
neglected 3. The cutoff region is defined by IB
B. only if the base current is 0 A.
much smaller than the C. ≤
current through R2 (the lower 4. Determine the reading on the meter
bias resistor). D. 320 µA when VCC = 20 V, RC = 5 kΩ, and IC = 2
25. Refer to this figure. The value of IC is 28. Refer to this figure. In the voltage- mA.
divider biased npn transistor circuit, if R1
opens, the transistor is
 INDIABIX 1
A. 10 V
5. In a fixed-bias circuit, which one of the
stability factors overrides the other
factors?
C. S(β)
6. Calculate the voltage across the 91 kΩ
resistor.

D. 116 B. False
10. Determine the change in IC from 14. In the case of this circuit, you must
25ºC to 175ºC for the transistor defined assume that VE = 0.1·VCC in order to
in this table for fixed-bias with RB = 240 calculate RC and RE.
kΩ and β= 100 due to the S(VBE) stability
factor.

C. 3.23 V
7. Calculate the value of VCEQ.

A. 145.8 µA
11. Which of the following is (are) related A. True
to an emitter-follower configuration?
A. The input and output signals 15. For an "on" transistor, the voltage VBE
are in phase. should be in the neighborhood of 0.7 V.
B. The voltage gain is slightly less A. True
than 1. 16. In a voltage-divider circuit, which one
C. Output is drawn from the of the stability factors has the least
C. 7.86 V
emitter terminal. effect on the device at very high
8. Calculate the approximate value of D. All of the above temperature?
the maximum power rating for the C. S(β)
12. At what region of operation is the
transistor represented by the output
base-emitter junction forward biased 17. Which of the following is (are) a
and the base-collector junction reverse stability factor?
biased? A. S(ICO)
B. Linear or active B. S(VBE)
C. S(β)
D. All of the above
characteristics of Figure 4.1? 18. Calculate I Csat.
B. 170 mW 13. You can select the values for the
emitter and collector resistors from the
9. For what value of β does the transistor
information that is provided for this
enter the saturation region?
circuit.
 INDIABIX 1
23. Which of the following voltages must A. True
have a negative level (value) in any npn
29. Calculate R
bias circuit?
sat if VCE = 0.3 V.
C. VBC
24. Determine the values of VCB and IB
for this circuit.

D. 4.72 mA A. 49.2 Ω
19. Calculate the storage time in a 30. The ratio of which two currents is
transistor switching network if toff is 56 represented by β?
ns, tf = 14 ns, and tr = 20 ns.
A. 1.4 V, 59.7 µA
B. 42 ns B. IC and IB
20. Determine ICQ at a temperature of 25. Use this table to determine the
31. Which of the following is assumed in
change in IC from 25ºC to 175ºC for RB /
175º C if ICQ = 2 mA at 25º C for RB / RE = the approximate analysis of a voltage
RE = 250 due to the S(ICO) stability factor.
20 due to the S(β) stability factor. divider circuit?
Assume an emitter-bias configuration.
A. 2.417 mA A. IB is essentially zero amperes.
21. Calculate ETh for this network. B. R1 and R2 are considered to be
series elements.
C. RE ≥ 10R2
D. All of the above

32. The saturation region is defined by

B. 140.34 µA VCE VCEsat.
C. ≤
26. For the typical transistor amplifier in
the active region, VCE is usually about 33. Calculate VCE.
% to % of VCC.
B. 25, 75
27. For the BJT to operate in the
saturation region, the base-emitter
junction must be -biased and
C. −3.65 V the base-collector junction must be
-biased.
22. Which of the following currents is A. forward, forward
nearly equal to each other? B. –4.52 V
B. IE and IC 28. The total time required for the
transistor to switch from the "off" to the
"on" state is designated as ton and 34. Which of the following is (are) the
defined as the delay time plus the time application(s) of a transistor?
element. A. Amplification of signal
B. Switching and control
 INDIABIX 1
C. Computer logic circuitry
D. All of the above C. 6V
35. It is desirable to design a bias circuit 5. A self-biased n-channel JFET has a VD
that is independent of the transistor = 6 V. VGS = –3 V. Find the value of VDS.
beta. C. 3V
A. True
6. Refer to the given figure. ID = 6 mA.
Calculate the value of VDS.

FIELD EFFECT B. 6V

TRANSISTORS 11. Refer to figure given below.

Determine the value of VGS.
1. For a JFET, the value of VDS at which ID
becomes essentially constant is the
A. pinch-off voltage.
2. The has a physical channel
between the drain and source. A. –9 V
A. D-MOSFET
3. Refer to figure given below. Calculate
the value of VDS. 7. What type(s) of gate-to-source C. –6 V
voltage(s) can a depletion MOSFET (D-
12. Which of the following devices has
MOSFET) operate with?
the highest input resistance?
A. zero
C. MOSFET
B. positive
C. negative 13. The value of VGS that makes ID
D. any of the above approximately zero is the
B. cutoff voltage.
8. Midpoint bias for a D-MOSFET is ID =
, obtained by setting VGS = 0. 14. The JFET is always operated with the
C. IDSS gate-source pn junction _ -
biased.
9. On the drain characteristic curve of a
B. reverse
B. 2V JFET for VGS = 0, the pinch-off voltage is
B. between the ohmic area and 15. Identify the p-channel D-MOSFET.
4. Refer to figure shown below. the constant current area.
Determine the value of VS.
10. Refer to the given figure. ID = 6 mA.
Calculate the value of VDS.

B. b
 INDIABIX 1
16. All MOSFETs are subject to damage 23. High input resistance for a JFET is 29. Identify the n-channel E-MOSFET.
from electrostatic discharge (ESD). due to
A. true D. the gate-source junction being
reverse-biased.
17. Identify the n-channel D-MOSFET.
24. For a JFET, the change in drain
current for a given change in gate-to-
source voltage, with the drain-to-source C. c
voltage constant, is 30. If VD is less than expected (normal)
C. forward transconductance. for a self-biased JFET circuit, then it
A. a could be caused by a(n)
25. Identify the p-channel E-MOSFET.
18. A dual-gated MOSFET is A. open RG.
D. either a depletion or an B. open gate lead.
enhancement MOSFET. C. FET internally open at gate.
D. all of the above
19. Refer to figure show below. Calculate
the value of VD. 31. Refer to the given figure. ID = 6 mA.
D. d Calculate the value of VDS.
26. Refer to figure shown below. What is
the value of IG?

B. 8V
20. What three areas are the drain C. 6.8 V
characteristics of a JFET (VGS = 0) divided
into? D. 0 mA
A. ohmic, constant-current,
breakdown
27. A JFET data sheet specifies VGS(off) = – DC BIASING FETs
6 V and IDSS = 8 mA. Find the value of ID
21. In a self-biased JFET circuit, if VD = when VGS = –3 V. 1. Calculate the value of VDS.
VDD then ID = . A. 2 mA
A. 0 28. A JFET data sheet specifies VGS(off) = –
22. The resistance of a JFET biased in the 10 V and IDSS = 8 mA. Find the value of ID
ohmic region is controlled by when VGS = –3 V.
B. VGS. D. 3.92 mA

C. 3.8 V
2. Calculate the value of VDS.
 INDIABIX 1
11. On the universal JFET bias curve, the
vertical scale labeled can, in
itself, be used to find the solution to
configurations.
A. m, fixed-bias
12. Calculate the value of RS. Assume
VGSQ = −2V.
D. 16 V
3. Given the values of VDQ and IDQ for this
circuit, determine the required values of
RD and RS. B. 100 MΩ
7. Which of the following is (are) true of a
self-bias configuration compared to a
fixed-bias configuration?
A. One of the dc supplies is B. 1.68 kΩ
eliminated.
13. Calculate the value of RD.
B. A resistor RS is added.
C. VGS is a function of the output
current ID.
D. All of the above
C. 3.2 kΩ, 400 Ω
8. The input controlling variable for a(n)
4. For what value of RD is the voltage is a current level and a voltage
across VDS zero? level for a(n) .
A. BJT, FET

9. Through proper design, a D. 4.13 kΩ

can be introduced that will affect the 14. At what value of RS does the circuit
biasing level of a voltage-controlled switch from depletion mode to
JFET resistor. enhancement mode?
B. thermistor
10. For what value of RS can the
B. 5.167 kΩ depletion-type MOSFETs operate in
enhancement mode?
5. For the FET, the relationship between
the input and output quantities is
due to the term in
Shockley's equation.
C. nonlinear, squared
6. For what value of R2 is VGSQ equal to 1
V?

C. 6.2 kΩ
A. 250 Ω
 INDIABIX 1
15. Which of the following current
equations is true? 21. Calculate VDS.
C. ID = IS
16. Calculate VDSQ.

D. 40 V
26. What is the approximate current
level in the gate of an FET in dc analysis?
A. 0A
D. 3.58 V A. 0V 27. Calculate VD.
17. Calculate the value of VDS.
22. For the noninverting amplifier, one
of the most important advantages
associated with using a JFET for control
is the fact that it is rather than
control.
A. dc, ac
23. What are the voltages across RD and
RS?
B. 17.0 V
28. Calculate VCE.
A. –3 V
18. Which of the following represents
the voltage level of VGS in a self-bias
configuration?
C. VS

19. The self-bias configuration

eliminates the need for two dc supplies.
A. True
D. 5.34 V
20. Which of the following is a false A. 0 V, 0 V
statement regarding the dc load line 29. Seldom are current levels measured
24. Depletion-type MOSFETs do not since such maneuvers require disturbing
when comparing self-bias and voltage-
permit operating points with positive the network structure to insert the
divider configurations?
values of VGS and levels of ID that exceed meter.
.
IDSS.
B. False
B. Both cross the origin. 25. Calculate the value of VDSQ. A. True
 INDIABIX 1
30. In the design of linear amplifiers, it is
good design practice to choose
operating points that do not crowd the
saturation level or cutoff regions.
A. True
31. What is the new value of RD when
there is 7 V across VDS?

B. 1.5 mA, –1.5 V

B. 3.3 kΩ
32. Which of the following describe(s)
the difference(s) between JFETs and
depletion-type MOSFETs?
A. VGS can be positive or negative
for the depletion- type.
B. ID can exceed IDSS for the
depletion-type.
C. The depletion-type can operate
in the enhancement
mode.
D. All of the above

33. Determine the value of VDSQ.

A. 3.5 V
34. Specification sheets typically provide
the value of the constant k for
enhancement-type MOSFETs.
B. False
35. Determine the quiescent values of ID
and VGS.