TSH193
Taiwan Semiconductor
Pull-up Resistor Integrated Hall Effect Latch
DESCRIPTION FEATURES
TSH193 Hall-effect sensor is a temperature stable, ● Chopper stabilized amplifier stage.
stress-resistant sensor. Superior high-temperature ● Optimized for BLDC motor applications.
performance is made possible through a dynamic ● Reliable and low shifting on high Temp condition.
offset cancellation that utilizes chopper-stabilization. ● Pull-up resistor integrated
This method reduces the offset voltage normally ● ESD Protection >4kV HBM
caused by device over molding, temperature
● Compliant to RoHS Directive 2011/65/EU and in
dependencies, and thermal stress.
accordance to WEEE 2002/96/EC
TSH193 includes the following on a single silicon chip:
● Halogen-free according to IEC 61249-2-21
voltage regulator, Hall voltage generator, small-signal
definition
amplifier, chopper stabilization, Schmitt trigger, Pull-up
resistor output. Advanced DMOS wafer fabrication
APPLICATION
processing is used to take advantage of low-voltage
● High temperature fan motor
requirements, component matching, very low input-
● 3 phase BLDC motor application
offset errors, and small component geometries.
● Speed sensing, position sensing
This device requires the presence of both south and
north polarity magnetic fields for operation. In the ● Revolution counting
presence of a south polarity field of sufficient strength, ● Solid-state switch
the device output sensor on, and only switches off ● Angular position detection
when a north polarity field of sufficient strength is ● Proximity detection
present.
TO-92S SOT-23
Pin Definition: Pin Definition:
1. VCC 1. VCC
2. Ground 2. Output
3. Output 3. Ground
Notes: Moisture sensitivity level: level 3. Per J-STD-020
TYPICAL APPLICATION CIRCUIT
1 Version: B1608
TSH193
Taiwan Semiconductor
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Supply voltage VCC 18 V
Output current IOUT 13 mA
Magnetic flux density Unlimited Gauss
o
Operating Temperature Range TOPR -40 to +125 C
o
Storage temperature range TSTG -55 to +150 C
o
Maximum Junction Temperature TJ 150 C
TO-92S 606
Package Power Dissipation PD mW
SOT-23 230
THERMAL PERFORMANCE
PARAMETER SYMBOL LIMIT UNIT
TO-92S 206 o
Thermal Resistance - Junction to Case RӨJC C/W
SOT-23 543
TO-92S 148 o
Thermal Resistance - Junction to Ambient RӨJA C/W
SOT-23 410
2
Note: Considering 6 cm of copper board heat-sink
ELECTRICAL SPECIFICATIONS
(DC Operating Parameters：TA=+25oC, VCC=12V)
PARAMETER CONDITIONS MIN TYP MAX UNIT
Supply Voltage Operating 2.5 -- 16 V
Supply Current B<BOP -- -- 5 mA
Output Saturation Voltage B>BOP -- -- 400 mV
Output Leakage Current IOFF B<BRP, VOUT=12V -- -- 10 µA
Output Rise Time RL=1.1KΩ, CL=20pF -- 0.04 0.45 µs
Output Fall Time RL=820Ω; CL=20pF -- 0.18 0.45 µs
ESD HBM 4 -- -- kV
Pull-up Resistor -- 10 -- kΩ
Operate Point (BOP) 5 -- 25 Gauss
Release Point (BRP) -25 -- -5 Gauss
Hysteresis (BOP - BRP) -- 30 -- Gauss
Note: 1G (gauss) = 0.1mT (millitesla)
ORDERING INFORMATION
PART NO. PACKAGE PACKING
TSH193CT B0G TO-92S 1kpcs / Bag
TSH193CX RFG SOT-23 3kpcs / 7”Reel
2 Version: B1608
TSH193
Taiwan Semiconductor
OUTPUT BEHAVIOR VERSUS MAGNETIC POLE
o
DC Operating Parameters: TA = -40 to 125 C, VCC = 2.5~18V
Parameter Test condition OUT (TO-92S) OUT (SOT-23)
North pole B>BOP Hi Low
South pole B<BRP Low Hi
TO-92S SOT-23
OUT=Hi OUT=Low OUT=Low OUT=Hi
(VCC) (VDSON) (VDSON) (VCC)
3 Version: B1608
TSH193
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TC = 25°C unless otherwise noted)
Figure 1. Flux Density vs. Supply Voltage Figure 2. Flux Density vs. Temperature
Figure 3. Supply Current vs. Temperature Figure 4. Supply Current vs. Supply Voltage
Figure 5. Saturation Voltage vs. Supply Voltage Figure 6. Saturation Voltage vs. Temperature
4 Version: B1608
TSH193
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TC = 25°C unless otherwise noted)
Figure 7. Leakage Current vs. Supply Voltage Figure 8. Power Dissipation vs. Temperature
5 Version: B1608
TSH193
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters)
TO-92S
MARKING DIAGRAM
193 = Device Code
Y = Year Code
WW = Week Code (01~52)
6 Version: B1608
TSH193
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters)
SOT-23
SUGGESTED PAD LAYOUT (Unit: Millimeters)
MARKING DIAGRAM
193 = Device Code
WW = Week Code Table
7 Version: B1608
TSH193
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
8 Version: B1608
