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2SD886

2SD886 Datasheet - Jiangsu Changjiang Electronics Technology Co., Ltd

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0% found this document useful (0 votes)

16 views2 pages

2SD886

2SD886 Datasheet - Jiangsu Changjiang Electronics Technology Co., Ltd

Uploaded by

Xavi Alci

We take content rights seriously. If you suspect this is your content, claim it here.

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Download as PDF, TXT or read online on Scribd

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.

, LTD

TO-126 Plastic-Encapsulate Transistors

2SD886 TRANSISTOR (NPN)

TO—126
FEATURES
Power dissipation 1. EMITTER

PCM: 1 W (Tamb=25℃) 2. COLLECTOR

Collector current 3. BASE

ICM: 3 A
Collector-base voltage 123
V(BR)CBO: 50 V
Operating and storage junction temperature range

TJ, Tstg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO Ic=100µA, IE=0 50 V

Collector-emitter breakdown voltage V(BR)CEO Ic=5mA, IB=0 50 V

Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 5 V

Collector cut-off current ICBO VCB=50V, IE=0 1 µA

Emitter cut-off current IEBO VEB=3V, IC=0 1 µA

hFE(1) VCE=2V, IC=20mA 100

DC current gain
hFE(2) VCE=2V, IC=1A 100 400

Collector-emitter saturation voltage VCE(sat) IC=2A, IB=200mA 0.5 V

Base-emitter saturation voltage VBE(sat) IC=2A, IB=200mA 2 V

Transition frequency fT VCE=5V, IC=100mA 80 MHz

Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 45 pF

Typical Characteristics 2SD886

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2SD886

Uploaded by

2SD886

Uploaded by

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.

TO-126 Plastic-Encapsulate Transistors

2SD886 TRANSISTOR (NPN)

PCM: 1 W (Tamb=25℃) 2. COLLECTOR

Collector current 3. BASE

TJ, Tstg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO Ic=100µA, IE=0 50 V

Collector-emitter breakdown voltage V(BR)CEO Ic=5mA, IB=0 50 V

Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 5 V

Collector cut-off current ICBO VCB=50V, IE=0 1 µA

Emitter cut-off current IEBO VEB=3V, IC=0 1 µA

hFE(1) VCE=2V, IC=20mA 100

Collector-emitter saturation voltage VCE(sat) IC=2A, IB=200mA 0.5 V

Base-emitter saturation voltage VBE(sat) IC=2A, IB=200mA 2 V

Transition frequency fT VCE=5V, IC=100mA 80 MHz

Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 45 pF

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