FGH40N60SFD 600V, 40A Field Stop IGBT

July 2008

FGH40N60SFD
600V, 40A Field Stop IGBT t

Features
General Description
• High current capability
Using Novel Field Stop IGBT Technology, Fairchild’s new
• Low saturation voltage: VCE(sat) =2.3V @ IC ses- ries of Field Stop IGBTs offer the optimum
= 40A performance for Induction Heating, UPS, SMPS and PFC
• High input impedance applications where low conduction and switching losses
• Fast switching are essential.
• RoHS compliant

Applications
• Induction Heating, UPS, SMPS, PFC

E C
C
G

COLLECTOR
(FLANGE) E

Absolute Maximum Ratings

Symbol Description Ratings Units
VCES Collector to Emitter Voltage 600 V
VGES Gate to Emitter Voltage  20 V
Collector Current @ TC = 25oC 80 A
IC
Collector Current @ TC = 100 C o
40 A
ICM (1) Pulsed Collector Current @ TC = 25 C
o 120 A
Maximum Power Dissipation @ TC = 25 C
o
290 W
PD
Maximum Power Dissipation @ TC = 100 C o
116 W
TJ Operating Junction Temperature -55 to +150 oC

Tstg Storage Temperature Range -55 to +150 oC

Maximum Lead Temp. for soldering

TL 300 oC
Purposes, 1/8” from case for 5 seconds

Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature

Thermal Characteristics
Symbol Parameter Typ. Max. Units
o
RJC(IGBT) Thermal Resistance, Junction to Case - 0.43 C/W
RJC(Diode) Thermal Resistance, Junction to Case - 1.45 o
C/W
o
RJA Thermal Resistance, Junction to Ambient - 40 C/W

©2008 Fairchild Semiconductor Corporation 1

www.fairchildsemi.com
FGH40N60SFD Rev.C
 FGH40N60SFD 600V, 40A Field Stop IGBT
Package Marking and Ordering Information
Max Qty
Packaging
Device Marking Device Package Type Qty per Tube per Box
FGH40N60SFD FGH40N60SFDTU TO-247 Tube 30ea -

Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics
BVCES Collector to Emitter Breakdown VGE = 0V, IC = 250A 600 - - V
Voltage
BVCES Temperature Coefficient of
VGE = 0V, IC = 250A - 0.6 - V/oC
T J Breakdown Voltage
ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 250 A
IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±400 nA

On Characteristics
VGE(th) G-E Threshold Voltage IC = 250A, VCE = VGE 4.0 5.0 6.5 V
IC = 40A, VGE = 15V - 2.3 2.9 V
VCE(sat) Collector to Emitter Saturation
IC = 40A, VGE =
Voltage 15V, TC = 125oC - 2.5 - V

Dynamic Characteristics
Cies Input Capacitance - 2110 - pF
Coes Output Capacitance VCE = 30V, VGE = 0V, - 200 - pF
f = 1MHz
Cres Reverse Transfer Capacitance - 60 - pF

Switching Characteristics
td(on) Turn-On Delay Time - 25 - ns
tr Rise Time - 42 - ns
td(off) Turn-Off Delay Time VCC = 400V, IC = - 115 - ns
tf Fall Time 40A, RG = 10, VGE - 27 54 ns
= 15V,
Eon Turn-On Switching Loss Inductive Load, TC = 25oC - 1.13 - mJ
Eoff Turn-Off Switching Loss - 0.31 - mJ
Ets Total Switching Loss - 1.44 - mJ
td(on) Turn-On Delay Time - 24 - ns
tr Rise Time - 43 - ns
td(off) Turn-Off Delay Time VCC = 400V, IC = - 120 - ns
tf Fall Time 40A, RG = 10, VGE - 30 - ns
= 15V,
Eon Turn-On Switching Loss Inductive Load, TC = 125oC - 1.14 - mJ
Eoff Turn-Off Switching Loss - 0.48 - mJ
Ets Total Switching Loss - 1.62 - mJ
Qg Total Gate Charge - 120 - nC
Qge Gate to Emitter Charge VCE = 400V, IC = - 14 - nC
40A, VGE = 15V
Qgc Gate to Collector Charge - 58 - nC

FGH40N60SFD Rev. 2 www.fairchildsemi.c

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 FGH40N60SFD 600V, 40A Field Stop IGBT
Electrical Characteristics of the Diode TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max Units

TC = 25oC - 1.95 2.6
VFM Diode Forward Voltage IF = 20A V
TC = 125oC - 1.85 -
TC = 25oC - 45 -
trr Diode Reverse Recovery Time ns
TC = 125oC - 140 -
IES =20A, dIES/dt =
200A/s TC = 25oC - 75 -
Qrr Diode Reverse Recovery nC
Charge TC = 125oC - 375 -

FGH40N60SFD Rev. 3 www.fairchildsemi.c

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 FGH40N60SFD 600V, 40A Field Stop IGBT
Typical Performance Characteristics

Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics

120
120
TC = o
o TC = 125 C
100 25 C 20V
20V 15V
15V 100 12V
Collector Current, IC [A]

Collector Current, IC [A]

80 80
12V

60 60

40 40 10V
10V
20 20

VGE = 8V VGE = 8V
0 0
0.0 1.5 3.0 4.5 6.0 0.0 1.5 3.0 4.5 6.0
Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V]

Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics

Characteristics
80
120
Common Emitter
VGE = 15V Common Emitter
VCE = 20V
TC o
60 o TC = 25 C
Collector Current, IC [A]

= 25 C o
Collector Current, IC [A]

o TC = 125 C
TC = 125 C
80

40

40
20

0
0 1 2 3 4 0
Collector-Emitter Voltage, VCE [V] 6 8 10 12 13
Gate-Emitter Voltage,VGE [V]

Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. VGE
Temperature at Variant Current Level
4.0
20
Common Emitter Common Emitter
VGE = 15V o
Collector-Emitter Voltage, VCE [V]

TC = -40 C
Collector-Emitter Voltage, VCE [V]

3.5
80A 16

3.0
12
2.5
40A
8
2.0
80A
IC = 20A 40A
1.5 4
IC = 20A

1.0 0
25 50 75 100 125 4 8 12 16 20
o
Collector-EmitterCase Temperature, TC [ C] Gate-Emitter Voltage, VGE [V]

FGH40N60SFD Rev. 4 www.fairchildsemi.c

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 FGH40N60SFD 600V, 40A Field Stop IGBT
Typical Performance Characteristics

Figure 7. Saturation Voltage vs. VGE Figure 8. Saturation Voltage vs. VGE
20 20
Common Emitter
o Common Emitter
Collector-Emitter Voltage, VCE [V]

TC = 25 C o

Collector-Emitter Voltage, VCE [V]

TC = 125 C
16 16

12 12

8
8
40A 40A
80A 80A
4
4
IC = 20A IC = 20A

0
4 8 12 16 20 0
4 8 12 16 20
Gate-Emitter Voltage, VGE [V]
Gate-Emitter Voltage, VGE [V]

Figure 9. Capacitance Characteristics Figure 10. Gate charge Characteristics

5000
15
Common Emitter Common Emitter
VGE = 0V, f = o
4000 TC = 25 C
Gate-Emitter Voltage, VGE [V]

o
Ciss 1MHz TC = 25 C 12
200V
Capacitance [pF]

Vcc = 100V 300V

3000
9

Coss
2000 6

1000 3
Crss

0
0
0.1 1 10
30 0 50 100 150
Collector-Emitter Voltage, VCE [V]
Gate Charge, Qg [nC]

Figure 11. SOA Characteristics Figure 12. Turn-on Characteristics vs.

Gate Resistance
400
200
100
10s
100
Collector Current, Ic [A]

10 100s
Switching Time [ns]

1ms
tr
1 10 ms

DC Common Emitter

Single Nonrepetitive
VCC = 400V, VGE = 15V
0.1 Pulse TC = 25oC td(on) IC = 40A
Curves must be o
derated linearly with TC = 25 C
increase o
0.01 TC = 125 C
in temperature
10
1 10 100 1000 0 10 20 30 40 50
Collector-Emitter Voltage, VCE [V] Gate Resistance, RG []

FGH40N60SFD Rev. 5 www.fairchildsemi.c

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 Typical Performance Characteristics

Figure 13. Turn-off Characteristics vs. Figure 14. Turn-on Characteristics vs.
Gate Resistance Collector Current
5500 500
Common Emitter Common Emitter
VCC = 400V, VGE = 15V VGE = 15V, RG =
10
o
IC = 40A TC = 25 C
1000 o
o
TC = 25 C TC = 125 C
Switching Time [ns]

Switching Time [ns]

TC = tr
o
125 C td(off) 100

100
td(on)
tf

10
0 10 20 30 40 50 10
20 40 60 80
Gate Resistance, RG []
Collector Current, IC [A]

Figure 15. Turn-off Characteristics vs. Figure 16. Switching Loss vs. Gate
Resistance Collector Current
500
10
Common Emitter Common Emitter
VGE = 15V, RG = VCC = 400V, VGE = 15V
10
o
TC = 25 C IC = 40A
o o
TC = 125 C T = 25 C
td(off)
Switching Time [ns]

T = Eon
C
Switching Loss [mJ]

100 125 C
o
C

tf

Eoff

10
20 40 60 80 0.2
0.3
0 10 20 30 40 50
Collector Current, IC [A]
Gate Resistance, RG []

Figure 17. Switching Loss vs. Collector Current Figure 18. Turn off Switching
SOA Characteristics
30 200
Common Emitter
VGE = 15V, RG = 100
10
10 o
T = 25 C
C
Eon
o
Collector Current, IC [A]

TC = 125 C
Switching Loss [mJ]

Eoff
1 10

0.1
Safe Operating Area
FGH40N60SFD Rev. 6 www.fairchildsemi.c
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 VGE o

FGH40N60SFD 600V, 40A Field Stop IGBT

= 15V, = 125 C
1 TC
20 30 40 50 60 70 80 1 10 100 1000
Collector Current, IC [A] Collector-Emitter Voltage, VCE [V]

FGH40N60SFD Rev. 7 www.fairchildsemi.c

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 FGH40N60SFD 600V, 40A Field Stop IGBT
Typical Performance Characteristics

Figure 19. Forward Characteristics Figure 20. Typical Reverse Current vs.
Reverse Voltage
80
200
100
o
TJ = 125 C
Forward Current, IF [A]

o
TJ = 125 C
10 10

Reverse Current , IR
TJ =
o
TJ = 75 C
o 1
25 C TJ =

[A]
o
75 C
1 o
TC = 25 C
0.1
o o
TC = 75 C TJ = 25 C

TC =
0.2
o 0.01
125 C
0 1 2 3 4 50 200 400 600
Forward Voltage, VF [V] Reverse Voltage, VR [V]

Figure 21. Stored Charge Figure 22. Reverse Recovery Time

100 60
Stored Recovery Charge, Qrr [nC]

Reverse Recovery Time, trr [ns]

80 200A/s

50
di/dt = 100A/s
60

200A/s
di/dt = 100A/s
40
40

20
5 10 20 30 40 30
Forward Current, IF [A] 5 10 20 30 40
Forward Current, IF [A]

Figure 23.Transient Thermal Impedance of IGBT

1
Thermal Response [Zthjc]

0.5

0.1 0.2
0.1
0.05
0.02
0.01 0.01 PDM

single pulse t1
t
2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc +
1E-3 TC
1E-5 1E-4 1E-3 0.01 0.1 1
Rectangular Pulse Duration [sec]

FGH40N60SFD Rev. 8 www.fairchildsemi.c

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 FGH40N60SFD 600V, 40A Field Stop IGBT
Mechanical Dimensions

TO-247AB (FKS PKG CODE 001)

Dimensions in Millimeters

FGH40N60SFD Rev. 9 www.fairchildsemi.c

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