Philips Semiconductors Product Specification

PowerMOS transistor BUK444-800A/B

GENERAL DESCRIPTION QUICK REFERENCE DATA

N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT
field-effect power transistor in a
plastic full-pack envelope. BUK444 -800A -800B
The device is intended for use in VDS Drain-source voltage 800 800 V
Switched Mode Power Supplies ID Drain current (DC) 1.4 1.2 A
(SMPS), motor control, welding, Ptot Total power dissipation 30 30 W
DC/DC and AC/DC converters, and RDS(ON) Drain-source on-state 6.0 8.0 Ω
in general purpose switching resistance
applications.

PINNING - SOT186 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION d
case
1 gate
2 drain
g
3 source
case isolated
1 2 3 s

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS Drain-source voltage - - 800 V
VDGR Drain-gate voltage RGS = 20 kΩ - 800 V
±VGS Gate-source voltage - - 30 V
-800A -800B
ID Drain current (DC) Ths = 25 ˚C - 1.4 1.2 A
ID Drain current (DC) Ths = 100 ˚C - 0.9 0.75 A
IDM Drain current (pulse peak value) Ths = 25 ˚C - 5.6 4.8 A
Ptot Total power dissipation Ths = 25 ˚C - 30 W
Tstg Storage temperature - - 55 150 ˚C
Tj Junction Temperature - - 150 ˚C

THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-hs Thermal resistance junction to with heatsink compound - - 4.17 K/W
heatsink
Rth j-a Thermal resistance junction to - 55 - K/W
ambient

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Philips Semiconductors Product Specification

PowerMOS transistor BUK444-800A/B

STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V(BR)DSS Drain-source breakdown VGS = 0 V; ID = 0.25 mA 800 - - V
voltage
VGS(TO) Gate threshold voltage VDS = VGS; ID = 1 mA 2.1 3.0 4.0 V
IDSS Zero gate voltage drain current VDS = 800 V; VGS = 0 V; Tj = 25 ˚C - 2 20 µA
IDSS Zero gate voltage drain current VDS = 800 V; VGS = 0 V; Tj =125 ˚C - 0.1 1.0 mA
IGSS Gate source leakage current VGS = ±30 V; VDS = 0 V - 10 100 nA
RDS(ON) Drain-source on-state VGS = 10 V; BUK444-800A - 5.0 6.0 Ω
resistance ID = 1.0 A BUK444-800B - 6.0 8.0 Ω

DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
gfs Forward transconductance VDS = 25 V; ID = 1.0 A 1.0 2.3 - S
Ciss Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 450 750 pF
Coss Output capacitance - 42 70 pF
Crss Feedback capacitance - 15 30 pF
td on Turn-on delay time VDD = 30 V; ID = 1.9 A; - 15 20 ns
tr Turn-on rise time VGS = 10 V; RGS = 50 Ω; - 25 40 ns
td off Turn-off delay time Rgen = 50 Ω - 50 65 ns
tf Turn-off fall time - 30 40 ns
Ld Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH
from package to centre of die
Ls Internal source inductance Measured from source lead 6 mm - 7.5 - nH
from package to source bond pad

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Visol Repetitive peak voltage from all R.H. ≤ 65% ; clean and dustfree - 1500 V
three terminals to external
heatsink
Cisol Capacitance from T2 to external f = 1 MHz - 12 - pF
heatsink

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
IDR Continuous reverse drain - - - 1.4 A
current
IDRM Pulsed reverse drain current - - - 5.6 A
VSD Diode forward voltage IF = 1.4 A ; VGS = 0 V - 1.0 1.3 V
trr Reverse recovery time IF = 1.4 A; -dIF/dt = 100 A/µs; - 230 - ns
Qrr Reverse recovery charge VGS = 0 V; VR = 100 V - 1.9 - µC

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Philips Semiconductors Product Specification

PowerMOS transistor BUK444-800A/B

PD% Normalised Power Derating Zth / (K/W) BUKx44-hv

120 10
with heatsink compound
110
100 D=

90 0.5
80 1 0.2
70
0.1
60
50 0.05
40 0.1 0.02
30 PD tp tp
D=
T
20
10 t
0 T
0 0.01
0 20 40 60 80 100 120 140 1E-07 1E-05 1E-03 1E-01 1E+01
Ths / C t/s
Fig.1. Normalised power dissipation. Fig.4. Transient thermal impedance.
PD% = 100⋅PD/PD 25 ˚C = f(Ths) Zth j-hs = f(t); parameter D = tp/T

ID% Normalised Current Derating ID / A BUK454-800A

120 4
with heatsink compound 10
110
100 6
90 3 5
80
70 4.8
60 2
50 4.6
40
4.4
30 1
20 4.2
10 4
0 0
0 20 40 60 80 100 120 140 0 4 8 12 16 20 24 28
Ths / C VDS / V
Fig.2. Normalised continuous drain current. Fig.5. Typical output characteristics, Tj = 25 ˚C.
ID% = 100⋅ID/ID 25 ˚C = f(Ths); conditions: VGS ≥ 10 V ID = f(VDS); parameter VGS

ID / A BUK444-800A,B RDS(ON) / Ohm BUK454-800A

10 20
ID A
D S/ 4 4.2 4.4
=V B
ON) tp = 10 us
S(
RD
15 4.6
VGS / V =
1 100 us
4.8
1 ms
10 5
10 ms 6
DC
0.1 100 ms 10
5

0.01 0
10 100 1000 0 1 2 3 4
VDS / V ID / A
Fig.3. Safe operating area. Ths = 25 ˚C Fig.6. Typical on-state resistance, Tj = 25 ˚C.
ID & IDM = f(VDS); IDM single pulse; parameter tp RDS(ON) = f(ID); parameter VGS

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Philips Semiconductors Product Specification

PowerMOS transistor BUK444-800A/B

ID / A BUK454-800A VGS(TO) / V
4
max.
4
Tj / C = 25
3 typ.
3

150 min.
2
2

1 1

0 0
0 2 4 6 8 10 -60 -40 -20 0 20 40 60 80 100 120 140
VGS / V Tj / C

Fig.7. Typical transfer characteristics. Fig.10. Gate threshold voltage.

ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS

gfs / S BUK454-800A ID / A SUB-THRESHOLD CONDUCTION

1E-01
3

1E-02

2 2% typ 98 %
1E-03

1E-04
1

1E-05

0 1E-06
0 1 2 3 4 0 1 2 3 4
ID / A VGS / V

Fig.8. Typical transconductance, Tj = 25 ˚C. Fig.11. Sub-threshold drain current.

gfs = f(ID); conditions: VDS = 25 V ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS

a Normalised RDS(ON) = f(Tj) C / pF BUK4y4-800

10000

1000
Ciss

1
100

Coss

0 10 Crss
-60 -40 -20 0 20 40 60 80 100 120 140 0 20 40
Tj / C VDS / V
Fig.9. Normalised drain-source on-state resistance. Fig.12. Typical capacitances, Ciss, Coss, Crss.
a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 1.0 A; VGS = 10 V C = f(VDS); conditions: VGS = 0 V; f = 1 MHz

April 1993 4 Rev 1.100

Philips Semiconductors Product Specification

PowerMOS transistor BUK444-800A/B

VGS / V BUK454-800 IF / A BUK454-800A

12 6

10 VDS / V =160 5
Tj / C = 150 25
640
8 4

6 3

4 2

2 1

0 0
0 2 4 6 8 10 12 14 16 18 20 0 1 2
QG / nC VSDS / V
Fig.13. Typical turn-on gate-charge characteristics. Fig.14. Typical reverse diode current.
VGS = f(QG); conditions: ID = 2.4 A; parameter VDS IF = f(VSDS); conditions: VGS = 0 V; parameter Tj

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Philips Semiconductors Product Specification

PowerMOS transistor BUK444-800A/B

MECHANICAL DATA

Dimensions in mm
10.2
Net Mass: 2 g max
5.7 4.4
max 0.9 max
3.2 0.5
3.0 2.9 max

4.4
4.0 7.9
7.5
17
seating max
plane

3.5 max
4.4
not tinned

13.5
min

1 2 3

0.4 M 0.9
0.7
0.55 max
2.54
1.3
5.08

top view

Fig.15. SOT186; The seating plane is electrically isolated from all terminals.

Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for F-pack envelopes.
3. Epoxy meets UL94 V0 at 1/8".

April 1993 6 Rev 1.100

Philips Semiconductors Product Specification

PowerMOS transistor BUK444-800A/B

DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

April 1993 7 Rev 1.100