UNISONIC TECHNOLOGIES CO.

, LTD
14N50 Preliminary Power MOSFET

14A, 500V N-CHANNEL

POWER MOSFET
„ DESCRIPTION
The UTC 14N50 is an N-Channel enhancement mode power
1
MOSFET. The device adopts planar stripe and uses DMOS
technology to minimize and provide lower on-state resistance and
TO-263
faster switching speed. It can also withstand high energy pulse
under the avalanche and commutation mode conditions.
The UTC 14N50 is ideally suitable for high efficiency switch
mode power supply, power factor correction and electronic lamp
ballast based on half bridge topology.
„ FEATURES
* RDS(ON) =0.38Ω @VGS = 10V
* Ultra low gate charge (typical 43nC )
* Low reverse transfer Capacitance ( CRSS = typical 20pF )
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
„ SYMBOL

„ ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3
14N50L-TQ2-T 14N50G-TQ2-T TO-263 G D S Tube
14N50L-TQ2-R 14N50G-TQ2-R TO-263 G D S Tape Reel

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14N50 Preliminary Power MOSFET

„ ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)

PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDSS 500 V
Gate-Source Voltage VGSS ±30 V
Continuous Drain Current ID 14 A
Pulsed Drain Current (Note 2) IDM 48 A
Avalanche Current (Note 2) IAR 14 A
Single Pulsed Avalanche Energy (Note 3) EAS 400 mJ
Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns
Power Dissipation (TC=25°C) PD 150 W
Junction Temperature TJ +150 °C
Storage Temperature TSTG -55~+150 °C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 9.3mH, IAS = 13A, VDD = 50V, RG= 25Ω ,Starting TJ = 25°C
4. ISD≤13.A, di/dt ≤200A/μs, VDD≤ BVDSS, Starting TJ= 25°C
„ THERMAL DATA
PARAMETER SYMBOL RATINGS UNIT
Junction to Ambient θJA 62.5 °C/W
Junction to Case θJC 0.83 °C/W

„ ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 1mA 500 V
Drain-Source Leakage Current IDSS VDS = 500V, VGS = 0V 10 μA
VGS = 20V, VDS = 0V 100 nA
Gate-Source Leakage Current IGSS
VGS = -20V, VDS = 0V -100 nA
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250mA,Referenced to 25°C 0.5 V/°C
ON CHARACTERISTICS
Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 100μA 3 3.75 4.5 V
Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 7A 0.34 0.38 Ω
DYNAMIC CHARACTERISTICS
Input Capacitance CISS 2000 pF
VDS=25V, VGS=0V,
Output Capacitance COSS 238 pF
f=1.0MHz
Reverse Transfer Capacitance CRSS 55 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD(ON) 24 nS
Turn-On Rise Time tR VDD =250V, ID =14A, 70 nS
Turn-Off Delay Time tD(OFF) RG =25Ω (Note 1,2) 54 nS
Turn-Off Fall Time tF 50 nS
Total Gate Charge QG 69 92 nC
VDS=400V, ID=12A,
Gate-Source Charge QGS 12 nC
VGS=10 V (Note 1,2)
Gate-Drain Charge QGD 31 nC

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14N50 Preliminary Power MOSFET

„ ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage VSD VGS = 0V, IS = 14A 1.6 V
Maximum Continuous Drain-Source Diode
IS 14 A
Forward Current
Maximum Pulsed Drain-Source Diode
ISM 56 A
Forward Current
Reverse Recovery Time trr VGS = 0V, IS = 14A, 470 nS
Reverse Recovery Charge QRR dIF / dt =100A/μs (Note 1) 3.1 μC
Note: 1. Pulse Test : Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating ambient temperature

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14N50 Preliminary Power MOSFET

„ TEST CIRCUITS AND WAVEFORMS

D.U.T. +

VDS

- L

RG
Driver VDD
* dv/dt controlled by RG
Same Type * ISD controlled by pulse period
VGS as D.U.T. * D.U.T.-Device Under Test

Peak Diode Recovery dv/dt Test Circuit

VGS Period P. W.
D=
(Driver) P.W. Period

VGS= 10V

IFM, Body Diode Forward Current

ISD
(D.U.T.)
di/dt

IRM

Body Diode Reverse Current

Body Diode Recovery dv/dt

VDS
(D.U.T.) VDD

Body Diode Forward Voltage Drop

Peak Diode Recovery dv/dt Waveforms

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14N50 Preliminary Power MOSFET

„ TEST CIRCUITS AND WAVEFORMS (Cont.)

VDS
90%

10%
VGS
tD(ON) tD(OFF)
tR tF

Switching Test Circuit Switching Waveforms

VGS

QG
10V

QGS QGD

Charge

Gate Charge Test Circuit Gate Charge Waveform

BVDSS
IAS

ID(t)
VDS(t)
VDD

tp Time

Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms

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14N50 Preliminary Power MOSFET

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.

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