Semiconductors

High-performance MOSFETs
for automotive systems
 HPA TrenchMOS –
powering automotive innovation
Today’s vehicles pack in more features than ever before: engine management units and catalytic
converters to reduce environmental impact, ABS and passenger restraint systems for increased safety,
and power assisted steering, electric windows, mirrors and seats to make driving a more comfortable
and convenient experience.

The demand for higher efficiency in all these automotive systems is pushing the need for increasingly
complex, high-performance electronics. Philips is leading the development of high-performance automotive
semiconductor solutions that meet the considerable power demands of systems that were once purely
mechanical and are now being replaced by electrical equivalents. For example, electric power assisted
steering (EPAS) systems require around 1 kW, while pump and fan motors draw between 500 and 800 W.
Other applications, such as electric braking, turbochargers or valve train control, can be equally power
hungry with the most extreme example being Integrated Starter Alternators (ISA), requiring around 10 kW.

Increased power demands mean higher current levels must be drawn from the standard 14 V automotive
supply. This results in two key issues for power MOSFETs to meet the needs of today’s electrical systems:
• large current handling capability in standard, inexpensive discrete packages without the need
for large arrays of devices to share the burden
• minimum heat dissipation even when operated for long periods

Philips’ High Performance Automotive (HPA) TrenchMOS™ family of MOSFETs has been designed
specifically to satisfy these requirements and improve overall system performance throughout the car.
Extremely rugged and with very low on-state resistance, they are supremely suited to the unique
automotive environment and provide an excellent balance of current handling, low dissipation and
cost-effectiveness all in industry-standard packages. With HPA devices, today’s automotive electrical
power demands can be easily met while remaining flexible enough for future innovations.

Key applications Key benefits

• Electric power assisted steering (EPAS) • Reduced heat dissipation and increased efficiency due
• Integrated starter alternator (ISA) to extremely low on-state resistance
• Electric turbochargers • Low parasitic capacitances lead to faster switching
• Catalytic converter heaters • Improved ruggedness to survive the tough
• Water, oil and fuel pump motors automotive environment
• Windscreen wiper, seat, window and • Fully qualified to AEC Q101 standard for automotive
mirror motors discrete semiconductors
• Portfolio includes all common automotive breakdown
voltage grades
Semiconductors
• Available in a choice of industry-standard
packaging options
 E(H)PAS (Electronic (Hydraulic) Power Assisted Steering)
E(H)PAS systems are an increasingly common feature in new vehicles.Whilst
EPAS systems themselves are more costly to manufacture than conventional
hydraulic systems, major overall cost-savings result as they are simpler to fit.
Philips is leading the way in helping reduce the cost of this MOSFET-intensive
application, with its TrenchMOS technology and upcoming naked die capability.

Catalytic converter heater

Low on-resistance TrenchMOS devices help reduce
pollution by switching high power electric heaters
to ensure the catalytic convertor is at working
temperature as soon as possible after starting.

Power train motors

Philips’ Trench and TrenchPLUS devices provide optimum
solutions for driving larger electric motors in water pump,
oil pump and cooling fan applications.

Integrated Starter Alternator

Philips is becoming a leading supplier of very low on-resistance Power
MOSFETs in naked die form, designed to cope with the huge current
requirements of future ISA systems.

Key applications

A growing family for increased power needs and performance

30 V - HPA TRENCHMOS
30Max
V - HPA
R DS TRENCHMOS
@ V GS ID (max) PACKAGE
Max(mΩ)
(ON)
R DS @(V)
V GS I@ 25°C
D (max)
SURFACE MOUNT PACKAGE LEADED
(ON) (mΩ) (V) @ (A)
25°C D2 PAK (SOT404B ) DPAK (SOT428 )
SURFACE MOUNT TO220AB ( SOT78B ) SOT226
LEADED
2.7 10 75
(A) BUK762R7-30B
D 2
PAK (SOT404B ) DPAK (SOT428 ) BUK752R7-30B
TO220AB ( SOT78B ) BUK7E2R7-30B
SOT226
2.8
2.7 5
10 75
75 BUK962R8-30B
BUK762R7-30B BUK952R8-30B
BUK752R7-30B BUK7E2R7-30B
3.5
2.8 55 75
75 BUK962R8-30B BUK952R8-30B BUK9E3R5-30B
3.5 7 55 55
75 BUK9207-30B BUK9E3R5-30B
77 10
5 55
55 BUK7207-30B
BUK9207-30B
77 5
10 75
55 BUK9607-30B BUK7207-30B BUK9507-30B
77 10
5 75
75 BUK7607-30B
BUK9607-30B BUK7507-30B
BUK9507-30B
7 10 75 BUK7607-30B BUK7507-30B

40 V - HPA TRENCHMOS
40Max R DS TRENCHMOS
V - HPA @ V GS ID (max) PACKAGE
Max(mΩ)
(ON) R DS @(V)
V GS I@ 25°C
D (max)
SURFACE MOUNT PACKAGE LEADED
(V) @(A) D PAK (SOT404B ) SURFACEDPAK (SOT428 ) TO220AB (SOT78B ) SOT226
2
(ON) (mΩ) 25°C MOUNT LEADED
3.1 10 75
(A) BUK763R1-40B
D 2
PAK (SOT404B ) DPAK (SOT428 ) BUK753R1-40B
TO220AB (SOT78B ) SOT226
3.2
3.1 5
10 75
75 BUK963R2-40B
BUK763R1-40B BUK953R2-40B
BUK753R1-40B BUK9E3R2-40B
4.3
3.2 10
5 75
75 BUK764R3-40B
BUK963R2-40B BUK754R3-40B
BUK953R2-40B BUK9E3R2-40B
4.4
4.3 5
10 75
75 BUK964R4-40B
BUK764R3-40B BUK954R4-40B
BUK754R3-40B
5.2
4.4 10
5 75
75 BUK765R2-40B
BUK964R4-40B BUK755R2-40B
BUK954R4-40B
6.4
5.2 5
10 75
75 BUK9606-40B
BUK765R2-40B BUK9506-40B
BUK755R2-40B
8
6.4 10
5 55
75 BUK9606-40B BUK7208-40B BUK9506-40B
8 10 75
55 BUK7608-40B BUK7208-40B BUK7508-40B
89 5
10 55
75 BUK7608-40B BUK9209-40B BUK7508-40B
9 5 75
55 BUK9609-40B BUK9209-40B BUK9509-40B
9 5 75 BUK9609-40B BUK9509-40B
* Types in red are currently in development

55 V - HPA TRENCHMOS
55Max @ V GS
R DS TRENCHMOS
V - HPA ID (max) PACKAGE
Max(mΩ)
(ON) R DS @(V)
V GS I@ 25°C
D (max)
SURFACE MOUNT PACKAGE LEADED

(ON) (mΩ)
(V) @ (A)
25°C DPAK (SOT428 )
D 2 PAK (SOT404B ) SURFACE MOUNT TO220AB (SOT78B) SOT226
LEADED
4 10 75
(A) BUK764R0-55B
D 2 PAK (SOT404B ) DPAK (SOT428 ) BUK754R0-55B
TO220AB (SOT78B) SOT226
4.2
4 105 75
75 BUK964R2-55B
BUK764R0-55B BUK954R2-55B
BUK754R0-55B
6
4.2 55 75
75 BUK9606-55B
BUK964R2-55B BUK9506-55B
BUK954R2-55B BUK9E06-55B
66 10
5 75
75 BUK7606-55B
BUK9606-55B BUK7506-55B
BUK9506-55B BUK7E06-55B
BUK9E06-55B
67 10
10 75
75 BUK7607-55B
BUK7606-55B BUK7507-55B
BUK7506-55B BUK7E06-55B
 Roof and door modules
Philips High Performance
Automotive devices may be used
for driving motors in powered
roof, mirror and window
applications as well as door locks.

30 V - HPA TRENCHMOS
Seat module
30Max
V - HPA
R DS TRENCHMOS
@ V GS ID (max) PACKAGE
V (mΩ)
30(ON)
Max - HPA @(V)
R DS TRENCHMOS
V GS I@ 25°C SURFACE MOUNT PACKAGE Seat LEADED
position motors and seat belt
D (max)
(A) D2 PAK (SOT404B ) DPAK (SOT428 ) TO220AB ( SOT78B )pre-tensioning
SOT226 can all benefit from
Max(mΩ)
(ON)
R DS @(V)
V GS I@ 25°C
D (max)
SURFACE MOUNT PACKAGE LEADED
2.7 10 75
(A) BUK762R7-30B
D PAK (SOT404B ) DPAK (SOT428 ) BUK752R7-30B
TO220AB ( SOT78B ) BUK7E2R7-30B
SOT226
(ON) (mΩ) (V) @ 25°C
2
SURFACE MOUNT Philips’ automotive
LEADED PowerMOS
2.8
2.7 5
10 75
75
(A) BUK962R8-30B
BUK762R7-30B BUK952R8-30B
BUK752R7-30B
( SOT78B ) BUK7E2R7-30B
D 2
PAK (SOT404B ) DPAK (SOT428 ) TO220AB SOT226
3.5
2.8
2.7 5
10 75
75 BUK962R8-30B
BUK762R7-30B BUK952R8-30B
BUK752R7-30B
solutions.BUK9E3R5-30B
BUK7E2R7-30B
7
3.5
2.8 5
5
5 55
75
75 BUK962R8-30B BUK9207-30B BUK952R8-30B BUK9E3R5-30B
7
7
3.5 10
5
5 55
55
75 BUK7207-30B
BUK9207-30B BUK9E3R5-30B
77
7 5
10
5 75
55
55 BUK9607-30B BUK7207-30B
BUK9207-30B BUK9507-30B
77
7 10
5
10 75
75
55 BUK7607-30B
BUK9607-30B BUK7207-30B BUK7507-30B
BUK9507-30B
7
7 10
5 75
75 BUK7607-30B
BUK9607-30B BUK7507-30B
BUK9507-30B Wipers
7 10 75 BUK7607-30B BUK7507-30B
HPA TrenchMOS technology
40 V - HPA TRENCHMOS offers a wide range of RDS(ON)
40Max R DS TRENCHMOS
V - HPA @ V GS ID (max) PACKAGE
choices for driving general motors
V -(mΩ)
Max
40(ON) @(V)
R DS TRENCHMOS
HPA V GS I@ 25°C
D (max)
SURFACE MOUNT PACKAGE LEADED
(A) D 2 PAK (SOT404B ) SURFACEDPAK (SOT428 ) TO220AB (SOT78Bsuch
) as those used in wipers.
SOT226
Max(mΩ)
(ON) R DS @(V)
V GS I@ 25°C
D (max)
MOUNT PACKAGE LEADED
@(A)
3.1 10 75 BUK763R1-40B
D PAK (SOT404B ) (SOT428 ) BUK753R1-40B
(SOT78B )
(V) SURFACEDPAK TO220AB SOT226
2
(ON) (mΩ) 25°C MOUNT LEADED
3.2
3.1 5
10 75
(A) BUK963R2-40B
BUK763R1-40B
D PAK (SOT404B )
2
DPAK (SOT428 ) BUK953R2-40B
BUK753R1-40B
TO220AB (SOT78B ) BUK9E3R2-40B
SOT226
4.3
3.2
3.1 10
5
10 75
75
75 BUK764R3-40B
BUK963R2-40B
BUK763R1-40B BUK754R3-40B
BUK953R2-40B
BUK753R1-40B BUK9E3R2-40B
4.4
4.3 5
10 75
75 BUK964R4-40B
BUK764R3-40B BUK954R4-40B
BUK754R3-40B
Fuel pump
3.2 5 75 BUK963R2-40B BUK953R2-40B BUK9E3R2-40B
5.2 10 75 BUK765R2-40B BUK755R2-40B
4.4
4.3 5
10 75
75 BUK964R4-40B
BUK764R3-40B BUK954R4-40B
BUK754R3-40B In line with Philips’ strategy to provide
6.4
5.2
4.4 5
10
5 75
75
75 BUK9606-40B
BUK765R2-40B
BUK964R4-40B BUK9506-40B
BUK755R2-40B
BUK954R4-40B
8 10 55 BUK7208-40B optimum driving solutions for electric
6.4
5.2 5
10 75
75 BUK9606-40B
BUK765R2-40B BUK9506-40B
BUK755R2-40B
8
6.4 10
5 75
55
75 BUK7608-40B
BUK9606-40B BUK7208-40B BUK7508-40B
BUK9506-40B
motors,TrenchMOS and TrenchPLUS
9
8 5
10 55
75
55 BUK7608-40B BUK9209-40B
BUK7208-40B BUK7508-40B technologies are often found in fuel
9 5 55
75 BUK9609-40B BUK9209-40B BUK9509-40B
8 10 75 BUK7608-40B BUK7508-40B pump applications.
9 5 75
55 BUK9609-40B BUK9209-40B BUK9509-40B
9 5 75 BUK9609-40B BUK9509-40B

55 V - HPA TRENCHMOS
55Max
V - HPA
R DS TRENCHMOS
@ V GS ID (max) PACKAGE
V -(mΩ)
Max
55(ON) @(V)
V GS
R DS TRENCHMOS
HPA I@ 25°C
D (max)
SURFACE MOUNT PACKAGE LEADED
(A) DPAK (SOT428 )
D 2 PAK (SOT404B ) SURFACE MOUNT TO220AB (SOT78B) SOT226
Max(mΩ)
(ON) R @(V)
V I@ 25°C
D (max)
PACKAGE LEADED
4 DS 10GS (A)
75 BUK764R0-55B DPAK (SOT428 )
D 2 PAK (SOT404B ) SURFACE MOUNT BUK754R0-55B
TO220AB (SOT78B) SOT226
(ON) (mΩ)
(V) @ 25°C LEADED
4.2
4 5
10 75
75
(A) BUK964R2-55B
BUK764R0-55B BUK954R2-55B
BUK754R0-55B
D 2 PAK (SOT404B ) DPAK (SOT428 ) TO220AB (SOT78B) SOT226
6
4.2
4 5
10 75
75 BUK9606-55B
BUK964R2-55B
BUK764R0-55B BUK9506-55B
BUK954R2-55B
BUK754R0-55B BUK9E06-55B
6
6
4.2 10
5
5 75
75
75 BUK7606-55B
BUK9606-55B
BUK964R2-55B BUK7506-55B
BUK9506-55B
BUK954R2-55B BUK7E06-55B
BUK9E06-55B
7
6
6 10
10
5 75
75
75 BUK7607-55B
BUK7606-55B
BUK9606-55B BUK7507-55B
BUK7506-55B
BUK9506-55B BUK7E06-55B
BUK9E06-55B
8.4
7
6 5
10
10 75
75 BUK9608-55B
BUK7607-55B
BUK7606-55B BUK9508-55B
BUK7507-55B
BUK7506-55B BUK7E06-55B
11
8.4
7 10
5
10 75
75 BUK7611-55B
BUK9608-55B
BUK7607-55B BUK7511-55B
BUK9508-55B
BUK7507-55B BUK7E11-55B
12
11 10 55
75 BUK7611-55B BUK7212-55B BUK7511-55B BUK7E11-55B
8.4 5 75 BUK9608-55B BUK9508-55B
12
12
11 5
10
10 55
55
75 BUK9212-55B
BUK7212-55B BUK7511-55B
BUK7611-55B BUK7E11-55B
12
12 5
10 75
55
55 BUK9612-55B BUK9212-55B
BUK7212-55B BUK9512-55B
12 5 75
55 BUK9612-55B BUK9212-55B BUK9512-55B
12 5 75 BUK9612-55B BUK9512-55B

75 V - HPA TRENCHMOS
75Max
V - HPA
R DS TRENCHMOS
@ V GS ID (max) PACKAGE
V (mΩ)
75(ON)
Max - HPA @(V)
V GS
R DS TRENCHMOS @ 25°C
ID (max) SURFACE MOUNT PACKAGE LEADED
(A) D 2 PAK (SOT404B ) SURFACEDPAK (SOT428 ) TO220AB ( SOT78B ) SOT226
Max(mΩ)
(ON) R @(V)
V GS @ 25°C
ID (max) MOUNT PACKAGE LEADED
6 DS 5 (A)
75 BUK9606-75B
D 2 PAK (SOT404B ) (SOT428 ) BUK9506-75B
( SOT78B ) SOT226
(ON) (mΩ)
(V) @ 25°C SURFACEDPAK
MOUNT TO220AB LEADED
6
6 10
5 75
75
(A) BUK7606-75B
BUK9606-75B BUK7506-75B
BUK9506-75B
D 2 PAK (SOT404B ) DPAK (SOT428 ) TO220AB ( SOT78B ) SOT226
13
6
6 10
10 75
75 BUK7613-75B
BUK7606-75B BUK7513-75B
BUK7506-75B
5 75 BUK9606-75B BUK9506-75B
14
13 10 55
75 BUK7613-75B BUK7214-75B BUK7513-75B
6 10 75 BUK7606-75B BUK7506-75B
16
14
13 5
10
10 67
55 BUK9616-75B BUK7214-75B BUK9516-75B
75 BUK7613-75B BUK7513-75B
17
16 5
5 55
67 BUK9616-75B BUK9217-75B
BUK7214-75B BUK9516-75B
14 10 55
17
16 5
5 55
67 BUK9616-75B BUK9217-75B BUK9516-75B
17 5 55 BUK9217-75B

100 V - HPA TRENCHMOS

Max
100 V -RHPA
DS @ V GS
TRENCHMOS ID (max) PACKAGE
Max -RHPA
100 @(V)
V GS @ID 25°C
(max) SURFACE MOUNT PACKAGE LEADED
(ON)V(mΩ
DS) TRENCHMOS
(A) D2 PAK (SOT404B ) SURFACEDPAK (SOT428 )
MOUNT TO220AB (SOT78B) SOT226
LEADED
Max(mΩ
(ON) R DS) @(V)
V GS @ 25°C
ID (max) PACKAGE
10 5 75
(A) BUK9610-100B (SOT428 ) BUK9510-100B
TO220AB
(V) @ 25°C D2 PAK (SOT404B ) SURFACEDPAK
MOUNT (SOT78B) SOT226
LEADED
10
(ON)10 (mΩ ) 105 75
75 BUK7610-100B BUK7510-100B
(A) BUK9610-100B
D2 PAK (SOT404B ) DPAK (SOT428 ) BUK9510-100B
TO220AB (SOT78B) SOT226
26
10
10 10 49
75
75 BUK7626-100B
BUK7610-100B BUK7227-100B BUK7526-100B
BUK7510-100B
5 BUK9610-100B BUK9510-100B
29
26
10 5
10 46
49
75 BUK9629-100B
BUK7626-100B BUK7227-100B BUK9529-100B
BUK7526-100B
10 BUK7610-100B BUK7510-100B
30
29
26 5
5 44
46 BUK9629-100B BUK9230-100B BUK9529-100B
10 49 BUK7626-100B BUK7227-100B BUK7526-100B
30
29 5
5 44
46 BUK9629-100B BUK9230-100B BUK9529-100B
Types30in RED are currently
5 in development
44 BUK9230-100B
Semiconductors
SOT404/D2PAK SOT428/DPAK SOT78B/TO220AB SOT226/I2PAK

Advanced TrenchMOS technology for improved SINGLE SHOT UIS PERFORMANCE

performance peak 75
avalanche C curves are competitor data
MSE181

power
Thanks to an advanced manufacturing process, Philips’ HPA MOSFETs deliver density HPA
(kW/cm2)
unbeatable performance. An established leader in proven Trench technology, 65
C4

Philips has taken its capabilities to the next level. Our innovative stripe configuration
55
for the MOSFET cells allows the cell pitch – and hence on-state resistance – to C1 C2

be reduced without the corresponding increase in capacitance and gate charge.

45
Consequently, HPA devices offer faster switching for a given RDS(on), leading to an C3

outstanding combination of size, efficiency and performance that helps you reduce 35
100 200 300 400
overall system costs without cutting back on functionality. tav (µs)

HPA stripe technology enhances the

device avalanche power density.
This increased performance is accompanied by improved reliability. Designed
specifically for the automotive market, devices fabricated using this process are Above plot demonstrates HPA versus
20% more rugged than previous generations, allowing HPA devices to perform competitors normalised maximum
avalanche power handling capability
to their maximum potential even in the harshest of automotive environments. prior to failure (higher = better)
Alongside enhanced avalanche capability, they are rated for temperatures between
-55 and +175 °C and are fully compliant with the internationally accepted AEC
MSE182
Q101 standard Stress Test Qualification for discrete semiconductors. specific
250

resistance
(mΩ/mm2)
200

As space-efficiency becomes an important factor in system design, the HPA

family maximizes the performance that can be delivered from small footprints. 150
previous
generation
Devices are available in a wide range of compact, industry-standard packages 100
HPA

including TO220, D2PAK and DPAK. For the ultimate design freedom, HPA
MOSFETs can also be delivered as naked dies with the added benefit of further 50

reduced RDS(on) values. 0

0 40 80 120
BVDSS (as designed) (V)

HPA technology’s increased active cell

density reduces the device specific
on-state resistance

Switch to 42 V and HPA switches with you

As the number of electronic components increases so do the demands on a
vehicle’s power supply, inevitably leading to the development of higher voltage
systems. While 42 V PowerNet is not yet a reality for many automotive
designers, the HPA family is prepared for this evolution. Devices are already
available rated for 75 V and 100 V, the voltage grades that will undoubtedly
be used in any initial next-generation 42 V power networks.
Philips Semiconductors
Philips Semiconductors is a worldwide company with over 100 sales
offices in more than 50 countries. For a complete up-to-date list of
our sales offices please e-mail
sales.addresses@www.semiconductors.philips.com.
A complete list will be sent to you automatically.
You can also visit our website
http://www.semiconductors.philips.com/sales.

www.semiconductors.philips.com

© Koninklijke Philips Electronics N.V. 2003 SCS 76

All rights reserved. Reproduction in whole or in part is prohibited
without the prior written consent of the copyright owner. The
information presented in this document does not form part of any
quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the
publisher for any consequence of its use. Publication thereof does not
convey nor imply any license under patent- or other industrial or
intellectual property rights.

date of release: June 2003

document order number: 9397 750 11136

Printed in the Netherlands