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Rev 3: Sept 2004

AOD405, AOD405L (Green Product)

P-Channel Enhancement Mode Field Effect Transistor

General Description Features

The AOD405 uses advanced trench technology to VDS (V) = -30V

provide excellent RDS(ON), low gate charge and low ID = -18A
gate resistance. With the excellent thermal resistance RDS(ON) < 32mΩ (VGS = -10V)
of the DPAK package, this device is well suited for RDS(ON) < 60mΩ (VGS = -4.5V)
high current load applications. AOD405L (Green
Product) is offered in a lead-free package.

TO-252
D-PAK D

Top View
Drain Connected to
Tab G
S

G D S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±20 V
G
Continuous Drain TA=25°C -18
Current B,G TA=100°C G ID -18 A
Pulsed Drain Current IDM -40
Avalanche Current C IAR -18 A
C
Repetitive avalanche energy L=0.1mH EAR 40 mJ
TC=25°C 60
PD W
Power Dissipation B TC=100°C 30
TA=25°C 2.5
PDSM W
Power Dissipation A TA=70°C 1.6
Junction and Storage Temperature Range TJ, TSTG -55 to 175 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 16.7 25 °C/W
RθJA
Maximum Junction-to-Ambient A Steady-State 40 50 °C/W
Maximum Junction-to-Case C Steady-State RθJL 1.9 2.5 °C/W

Alpha & Omega Semiconductor, Ltd.

AOD405, AOD405L

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=-250µA, VGS=0V -30 V
VDS=-24V, VGS=0V -0.003 -1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C -5
IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.2 -2 -2.4 V
ID(ON) On state drain current VGS=-10V, VDS=-5V -40 A
VGS=-10V, ID=-18A 24.5 32
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 36 43
VGS=-4.5V, ID=-10A 41 60 mΩ
gFS Forward Transconductance VDS=-5V, ID=-18A 17 S
VSD Diode Forward Voltage IS=-1A,VGS=0V -0.76 -1 V
IS Maximum Body-Diode Continuous Current -18 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 920 1100 pF
Coss Output Capacitance VGS=0V, VDS=-15V, f=1MHz 190 pF
Crss Reverse Transfer Capacitance 122 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 3.6 4.5 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V) 18.7 23 nC
Qg(4.5V) Total Gate Charge (4.5V) 9.7 11.7 nC
VGS=-10V, VDS=-15V, ID=-18A
Qgs Gate Source Charge 2.54 nC
Qgd Gate Drain Charge 5.4 nC
tD(on) Turn-On DelayTime 9 13 ns
tr Turn-On Rise Time VGS=-10V, VDS=-15V, RL=0.82Ω, 25 35 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 20 30 ns
tf Turn-Off Fall Time 12 18 ns
trr Body Diode Reverse Recovery Time IF=-18A, dI/dt=100A/µs 21.4 26 ns
Qrr Body Diode Reverse Recovery Charge IF=-18A, dI/dt=100A/µs 13 16 nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation P DSM is based on steady-state R θJA and the maximum allowed junction temperature of 150°C. The value in any a given
application depends on the user's specific board design, and the maximum temperature fo 175°C may be used if the PCB or heatsink allows it.
B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
G. The maximum current rating is limited by the package current capability.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE

Alpha & Omega Semiconductor, Ltd.

AOD405, AOD405L

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 30
-10V -4.5V
-6V VDS=-5V
25 -5V 25

20 20
-4V
-ID (A)

-ID(A)
15 15

-3.5V
10 10

5 5 125°C
VGS=-3V 25°C
0 0
0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
-VDS (Volts) -VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

70 1.60
65
Normalized On-Resistance

60 VGS=-4.5V
VGS=-4.5V
55 1.40 ID=-10A
50
RDS(ON) (mΩ)

45
VGS=-10V
40 1.20
35 ID=-18A
30
25 1.00
20 VGS=-10V
15
0.80
10
0 5 10 15 20 25 0 25 50 75 100 125 150 175

-ID (A) Temperature (°C)

Figure 4: On-Resistance vs. Junction
Figure 3: On-Resistance vs. Drain Current and
Temperature
Gate Voltage

100 1.0E+01
90
1.0E+00
80 ID=-18A
1.0E-01
70
125°C
60
RDS(ON) (mΩ)

1.0E-02
-IS (A)

125°C
50
1.0E-03
40
30 1.0E-04
25°C
25°C
20 1.0E-05
10
1.0E-06
0 0.0 0.2 0.4 0.6 0.8 1.0
3 4 5 6 7 8 9 10
-VGS (Volts) -VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics

Alpha & Omega Semiconductor, Ltd.

AOD405, AOD405L

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

1.00E+01 1500
VDS=-15V
ID=-18A 1250
8.00E+00 Ciss

Capacitance (pF)
1000
-VGS (Volts)

6.00E+00
750
4.00E+00
500
Coss Crss
2.00E+00
250

0.00E+00 0
0 4 8 12 16 20 0 5 10 15 20 25 30
-Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0
TJ(Max)=150°C, TA=25°C 40
TJ(Max)=150°C
TA=25°C
10µs
RDS(ON) 1ms 30
10.0 limited 100µs
-ID (Amps)

10ms
Power (W)

0.1s
20

1.0 1s
10s 10
DC

0.1
0
0.1 1 10 100
0.001 0.01 0.1 1 10 100 1000
-VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note F)
Ambient (Note F)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJA Normalized Transient

RθJA=50°C/W
Thermal Resistance

0.1 PD

Ton
Single Pulse T

0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Alpha & Omega Semiconductor, Ltd.