NIKO-SEM N- & P-Channel Enhancement Mode P2804NVG

Field Effect Transistor SOP-8

Lead-Free

PRODUCT SUMMARY
V(BR)DSS RDS(ON) ID
N-Channel 40 28m 7A G : GATE
D : DRAIN
P-Channel -40 65m -5A S : SOURCE

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS SYMBOL N-Channel P-Channel UNITS
Drain-Source Voltage VDS 40 -40 V
Gate-Source Voltage VGS ±20 ±20 V
TC = 25 °C 7 -6
Continuous Drain Current ID
TC = 70 °C 6 -5 A
1
Pulsed Drain Current IDM 20 -20
TC = 25 °C 2
Power Dissipation PD W
TC = 70 °C 1.3
Junction & Storage Temperature Range Tj, Tstg -55 to 150
1
°C
Lead Temperature ( /16” from case for 10 sec.) TL 275

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
Junction-to-Ambient RθJA 62.5 °C / W
1
Pulse width limited by maximum junction temperature.
Duty cycle ≤ 1%
2

ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)

LIMITS UNIT
PARAMETER SYMBOL TEST CONDITIONS
MIN TYP MAX
STATIC
VGS = 0V, ID = 250µA N-Ch 40
Drain-Source Breakdown Voltage V(BR)DSS
VGS = 0V, ID = -250µA P-Ch -40

VDS = VGS, ID = 250µA V

N-Ch 1.0 1.5 2.5
Gate Threshold Voltage VGS(th)
P-Ch -1.0 -1.5 -2.5
VDS = VGS, ID = -250µA

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NIKO-SEM N- & P-Channel Enhancement Mode P2804NVG
Field Effect Transistor SOP-8
Lead-Free

VDS = 0V, VGS = ±20V N-Ch ±100

Gate-Body Leakage IGSS nA
VDS = 0V, VGS = ±20V P-Ch ±100

VDS = 32V, VGS = 0V N-Ch 1

P-Ch -1
VDS = -32V, VGS = 0V
Zero Gate Voltage Drain Current IDSS µA
VDS = 30V, VGS = 0V, TJ = 55 °C N-Ch 10
P-Ch -10
VDS = -30V, VGS = 0V, TJ = 55 °C

VDS = 5V, VGS = 10V N-Ch 20

On-State Drain Current1 ID(ON) A
P-Ch -20
VDS =-5V, VGS = -10V

VGS = 4.5V, ID = 6A N-Ch 30 42

P-Ch 80 105
VGS = -4.5V, ID = -4A
Drain-Source On-State Resistance1 RDS(ON) m
VGS = 10V, ID = 7A N-Ch 21 28
P-Ch 50 65
VGS = -10V, ID = -5A

VDS = 10V, ID = 7A N-Ch 19

Forward Transconductance1 gfs S
P-Ch 11
VDS = -10V, ID = -5A

DYNAMIC
N-Ch 790
Input Capacitance Ciss
N-Channel P-Ch 690
VGS = 0V, VDS = 10V, f = 1MHz N-Ch 175
Output Capacitance Coss
P-Channel P-Ch 310 pF
VGS = 0V, VDS = -10V, f = 1MHz N-Ch 65
Reverse Transfer Capacitance Crss
P-Ch 75

N-Channel N-Ch 16
Total Gate Charge2 Qg
VDS = 0.5V(BR)DSS, VGS = 10V, P-Ch 14
ID = 7A N-Ch 2.5
Gate-Source Charge2 Qgs
P-Channel P-Ch 2.2 nC
VDS = 0.5V(BR)DSS, VGS = -10V, N-Ch 2.1
Gate-Drain Charge2 Qgd ID = -5A
P-Ch 1.9

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NIKO-SEM N- & P-Channel Enhancement Mode P2804NVG
Field Effect Transistor SOP-8
Lead-Free

N-Ch 2.2 4.4

Turn-On Delay Time2 td(on) N-Channel
P-Ch 6.7 13.4
VDS = 20V
N-Ch 7.5 15
Rise Time2 tr
ID ≅ 1A, VGS = 10V, RGEN = 6 P-Ch 9.7 19.4
N-Ch 11.8 21.3
Turn-Off Delay Time2 td(off) P-Channel nS
P-Ch 19.8 35.6
VDS = -20V, RL = 1
N-Ch 3.7 7.4
Fall Time2 tf
ID ≅ -1A, VGS = -10V, RGEN = 6 P-Ch 12.3 22.2

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)

N-Ch 1.3
Continuous Current IS
P-Ch -1.3
A
3
N-Ch 2.6
Pulsed Current ISM
P-Ch -2.6

Forward Voltage1 VSD IF = IS, VGS = 0V N-Ch 1

V
P-Ch -1
IF = IS, VGS = 0V

1
Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%.
2
Independent of operating temperature.
3
Pulse width limited by maximum junction temperature.

REMARK: THE PRODUCT MARKED WITH “P2804NVG”, DATE CODE or LOT #

Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name.

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NIKO-SEM N- & P-Channel Enhancement Mode P2804NVG
Field Effect Transistor SOP-8
Lead-Free

TYPICAL PERFORMANCE CHARACTERISTICS

N-CHANNEL

Body Diode Forward Voltage Variation with Source Current and Temperature
100
V GS = 0V
T A = 125° C
10
Is - Reverse Drain Current(A)

25° C
1

-55° C
0.1

0.01

0.001
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Body Diode Forward Voltage(V)

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NIKO-SEM N- & P-Channel Enhancement Mode P2804NVG
Field Effect Transistor SOP-8
Lead-Free

5 AUG-19-2004
NIKO-SEM N- & P-Channel Enhancement Mode P2804NVG
Field Effect Transistor SOP-8
Lead-Free

P-CHANNEL

100
V GS = 0V
-Is - Reverse Drain Current(A)

10

T A = 125° C
1

25° C -55° C
0.1

0.01

0.001
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
-VSD - Body Diode Forward Voltage(V)

6 AUG-19-2004
NIKO-SEM N- & P-Channel Enhancement Mode P2804NVG
Field Effect Transistor SOP-8
Lead-Free

7 AUG-19-2004
NIKO-SEM N- & P-Channel Enhancement Mode P2804NVG
Field Effect Transistor SOP-8
Lead-Free

SOIC-8(D) MECHANICAL DATA

mm mm
Dimension Dimension
Min. Typ. Max. Min. Typ. Max.

A 4.8 4.9 5.0 H 0.5 0.715 0.83

B 3.8 3.9 4.0 I 0.18 0.254 0.25

C 5.8 6.0 6.2 J 0.22

D 0.38 0.445 0.51 K 0° 4° 8°

E 1.27 L

F 1.35 1.55 1.75 M

G 0.1 0.175 0.25 N

F
I
G H K
D E

B C

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