Experiment No.

Diode characteristics (FORWARD AND REVERSE)

Aim:

To plot the Forward and Reverse characteristics of P-N. Junction diode.

Apparatus:

1. Two D.C. Regulated Power Supply 0-3V/0-30V

2. P.N junction diode (OA 79) placed under the cabinet and the connections are
brought inside the cabinet
3. One dual range voltmeter (0-3V/ 0-30V) to measure forward and reverse
voltage
4. One dual range ammeter (0-15mA /0-100μA) to measure forward current and
reverse current.

Theory:

The characteristics of a P.N. junction diode means the graph plot between voltage
applied across the junction and the resulting circuit current as shown in Figure A.

To study the forward bias characteristics we complete the electric circuit as shown
in Figure 1 such that the ‘P’ end of the junction diode is maintained at a positive potential
and ‘N’ end at a negative potential. The battery connection in forward bias permits
current to flow across the junction. However, a minimum voltage of about 0.1-0.2 volt is
needed to overcome the potential barrier at the junction and permit any current flow. The
current increases rapidly and almost linearly with increasing battery voltage. By finding
the slope of the V-I curve we can calculate the 'forward resistance' of the junction diode
and it is found to have a small value. To study the reverse bias characteristics we
complete the electric circuit as shown in Figure 2 such that the ‘P’ end of the junction is
connected to the negative terminal of the battery and ‘N’ end to the positive terminal of
the battery. In this case the applied voltage further strengthens the potential barrier at the

junction.Therefore the resistance of the junction (known as reverse resistance) becomes

very large and therefore no current flows in the circuit. A small reverse current (or
leakage current) of a few micro-ampere still flows across the junction due to the diffusion
of minority charge carriers. If the reverse bias is made very high, the covalent bonds near
the junction break down and a large number of electron-hole pairs are liberated. The
reverse voltage at which P-N Junction breaks down and a sudden rise in reverse current
takes place is called the 'breakdown voltage'.

Procedure:

A. FOR FORWARD BIAS CHARACTERISTICS

1. Complete the circuit in forward bias as shown in Figure (1) using the power
supply (0-3V) as the voltage source and the milliammeter for measuring current.
2. Adjust the position of the variable contact of the rheostat (or the potentiometer)
so that the voltage reads zero. Now increase the voltage in small steps of about 0.1 volt
each and note the reading of voltmeter as well as the corresponding reading of
milliammeter.
3. Plot a graph between forward voltage VF and forward current IF by taking VF
along X-axis and IF along Y- axis.

B. FOR REVERSE BIAS CHARACTERISTICS

1. Complete the electric circuit of the given semiconductor diode as shown in

Figure (2) using the power supply (0-30V) as the voltage source and the micro-ammeter
for measuring the current.
2. Adjust the position of the variable contact of the potentiometer so that the
voltmeter reads zero. Now increase the voltage in small steps and note the reading of the
voltmeter as well as the corresponding reading of the micro-ammeter.
3. Plot a graph between reverse voltage VR and the reverse current IR by taking VR
along X-axis and IR along Y- axis

Serial No For Forward Biasing For Reverse Biasing

Voltage, VF (V) Current, IF (mA) Voltage VR (V) Current IR (μA)

Result:
The forward and reverse characteristics of P-N. Junction diode is plotted.
Experiment No.

Zener diode : V-I characteristics

Aim:

To plot the reverse bias characteristics of a zener diode.

Apparatus:

1. One continuously variable DC regulated power supply of 0 - 1 5V.

2. Two Digital meters to measure voltage & current.
3. One series Resistance & three Zener Diodes (5.1V, 8.2V, 12V) has been
provided on the front panel

Theory:

A rectifier with appropriate filter serves as a good source of DC output. However,

The major disadvantage of such a power supply is that the output voltage changes with
the variations in the input voltage or load. Thus if the input voltage increases, the DC
output voltage of the rectifier also increases. Similarly, if the load current increases, the
output voltage falls due to the voltage drop in the rectifying element, filter chokes,
transformer winding etc. In many electronic applications it is desired that the output
voltage should remain constant regardless of the variations in the input voltage or load. In
order to ensure this a voltage stabilizing device called voltage stabilizer is used. Several
stabilizing circuits have been designed but only Zener Diode as a voltage stabilizer will
be discussed. When the reverse bias on a crystal diode is increased a critical voltage,
called breakdown voltage is reached where the reverse current increases sharply to a high
value. The breakdown region is the knee of the reverse characteristics. The satisfactory
explanation of this breakdown of the junction was first given by the American scientist C.
Zener. Therefore, the breakdown voltage is sometimes called Zener voltage and the
sudden increase in current is known as Zener current. The breakdown or Zener voltage
depends upon the amount of doping. If the diode is heavily doped, the depletion layer
will be thin and consequently the breakdown of the junction will occur at a lower reverse
voltage, on the other hand, a lightly doped diode has a higher breakdown voltage.
Make all the connections as shown in fig 1A using patch codes.
A properly doped crystal diode which has a sharp breakdown voltage is known as
a Zener Diode. The symbol of a Zener Diode is just like an ordinary diode except that the
bar is turned into Z-shape. The following points may be noted about the Zener diode:
 1. A Zener diode is like an ordinary diode except that it is properly doped so as to
have a sharp breakdown voltage.
2. A Zener diode is always reverse connected i.e. it is always reverse biased.
3. A Zener diode has a sharp breakdown voltage, called Zener voltage Vz.
4. When forward biased its characteristics are just those of ordinary diodes.
5. The Zener diode is not immediately burnt just because it has entered the
breakdown region. As long as the external circuit connected to the diode limits the diode
current to less than burn out value, the diode will not burn out.
Whenever the reverse voltage across a zener diode exceeds the breakdown voltage
Vz, the current increases very sharply. In this region, the curve is almost vertical. It
means that voltage across the Zener diode is constant at Vz even though the current
through it changes.

Procedure:

FOR REVERSE BIAS CHARACTERISTICS

1. Make all the connections as shown in Fig. (2a) through Patch cords. Connect
the positive end of the power supply to the positive of the voltmeter. Negative end of
power supply to negative of Voltmeter. Connect the other end of resistance Rs to cathode
(K) of Zener Diode. Connect anode (A) of Zener Diode to the positive socket of mA
meter. connect negative socket of Power Supply to Negative of mA.

2. Switch ON the instrument.

3. Increase the voltage slowly and note down the corresponding current. Note
down the observations in Table 2.
4. Keep on increasing the voltage till current is rising uniformly. At a particular
voltage (the voltage rating of Zener Diode) current rises abruptly. This is called Zener
Breakdown Voltage of p-n junction diodes.
5. Plot a graph between V & I for reverse characteristics as shown in Fig (2b)

Zener diode 1 Zener diode 2 Zener diode 3

Reverse Reverse Reverse Reverse Reverse Reverse

voltage Current voltage Current voltage Current
(VR) (IR) (VR) (IR) (VR) (IR)

Table 2
Result:

The reverse bias characteristics of zener diodes are plotted.

The break down voltage of

Zener diode 1 =

Zener diode 2 =

Zener diode 3 =
Experiment No.
HALF WAVE RECTIFIER

Aim: ​
To find the ripple factor of a half-wave rectifier (with and without filter circuit)
Theory:​
Conversion of an AC wave to a DC wave is called rectification. The circuit
diagram of the half wave rectifier is shown in Fig. 1. Here Vin is the input AC voltage.
The diode is forward biased during the positive half cycle, and it conducts a current
through the load resistor.

Half wave rectifier without filter circuit

Half wave rectifier with filter circuit

During the negative half cycle, no current will flow through the circuit. Therefore,
the negative-half cycle could not appear across the load. Since the wave recurs itself, the
positive half cycles will only be seen on the output VL.
For a half wave rectifier,
Ripple factor = Vac/Vdc
Procedure:
Using the given patchcords make connections in the experimental kit. Measure the
value of Vac and Vdc using the inbuilt voltmeter for different loads and find the ripple
factor with and without filter circuit.

Ripple factor without filter circuit

Sl RL Vac Vdc (Volts) Ripple

No: (Ohms) (Volts) Factor

​ ​
 Ripple factor with filter circuit

Sl RL Vac Vdc (Volts) Ripple

No: (Ohms) (Volts) Factor

Results:
Observed value of Ripple factor (RL= 500 Ω)
with filter=
without filter=
Experiment No.
FULL WAVE RECTIFIER
Aim:
To find the ripple factor of a Full-wave rectifier , with and without filter circuit.
Theory:
Conversion of an AC wave to a DC wave is called rectification. In the electronic
circuit shown in Fig. 1, the circuit of a centre-tapped full wave rectifier uses two diodes
D1&D2. During the positive half cycle of secondary voltage (input voltage), the diode
D1 is forward biased and D2 is reverse biased. So the diode D1 conducts and current
flows through load resistor RL. During the negative half cycle, diode D2 becomes forward
biased and D1 is reverse biased. Now, D2 conducts and current flows through the load
resistor RL in the same direction. There is a continuous current flow through the load
resistor RL, during both the half cycles and will get unidirectional current as shown in the
wave form. The difference between full wave and half wave rectification is that a full
wave rectifier allows unidirectional (one way) current to the load during the entire 360
degrees of the input signal and half-wave rectifier allows this only during one half cycle
(180 degree).
 Full wave rectifier with filter circuit

THEORETICAL CALCULATIONS:

For a full wave rectifier,​

Ripple factor, r = Vac/Vdc

PROCEDURE:

1. Connections are made as per the circuit diagram

2. Measure Vac and Vdc at the output side of the rectifier.

3. The Ripple factors are calculated.

Ripple factor without filter circuit

Sl RL Vac Vdc (Volts) Ripple

No: (Ohms) (Volts) Factor

Ripple factor with filter circuit

Sl RL Vac Vdc (Volts) Ripple

No: (Ohms) (Volts) Factor
Results:

Observed value of Ripple factor ( RL =500 Ω)

With filter =

Without filter=
Experiment No.
Determination of Band Gap Energy of a semiconductor
Aim:
To determine the width of the forbidden energy gap in a semiconductor material.
Apparatus:
PN junction diode, voltmeter, ammeter, oven etc
Circuit:
The circuit diagram of the experiment is given in the figure. The diode is
connected in reverse bias . The voltage and current of the reverse biased diode is
measured by using digital voltmeter and digital microammeter. A heating system (oven)
is used to increase the temperature of the diode.

Theory:
The bandgap is a crucial property that defines a semiconductor's characteristics. It
reflects how easily covalent bonds within the semiconductor can break, releasing
electrons. Consequently, the bandgap determines the quantity of free electrons and holes
available for electrical conduction at a given temperature, which directly affects the
electrical properties of any device made from the material. For instance, silicon has a
bandgap of 1.12 eV, while germanium's bandgap is 0.72 eV at room temperature. This
means that at the same temperature, germanium will have more free charge carriers than
silicon. Additionally, the range of temperatures over which a device operates depends on
the bandgap of the material used, with silicon devices typically functioning over a
broader temperature range. More commonly, semiconductors are available in device
form, where a p-n junction diode can be used to determine the bandgap. A p-n junction
diode contains both p-type and n-type semiconductors, and the bandgap in these doped
materials remains equivalent to that in the pure semiconductor. In a p-type material, holes
are the majority carriers, while electrons are the minority carriers; in an n-type material,
electrons are the majority, and holes are the minority.

When these two types of semiconductors form a junction, a depletion region (or
space- charge region) develops at the interface, where an electric field restricts majority
carriers from crossing the junction but facilitates the movement of minority carriers. The
majority carriers are created by intentional impurities (doping) in each region, whereas
minority carriers arise due to thermal effects. That is, minority carriers are generated by
the breaking of covalent bonds, which requires an energy input equal to the bandgap
energy, Eg. The variation of minority carriers can be carried out through a study of
temperature variation of reverse saturation current which is the current in the diode under
reverse bias condition.

This current is given by ​ I0= 𝐶𝑒 (−𝐸𝑔/KT)

Or
3
𝐸𝑔 10
log I0=log C- . 2.303𝑘∗1000 𝑇

The reverse saturation current varies inversely with temperature. A plot of log I0
3
10 𝐸𝑔
versus 𝑇
gives a straight line with a negative slope having a value 2.303𝑘∗1000

Determine the slope of the straight line , and band gap energy can be calculated. Thus
𝐸𝑔 = 0.198 ∗ 𝑠𝑙𝑜𝑝e
Procedure:
1. Connections are shown in figure.
2. Insert the thermometer in the hole provided with the oven.
3. Now put the power supply ON/OFF switch to ON position and see that the
jewel light is blowing .

4. Check whether the readings on voltmeter and ammeter are zero.

5. Fix the reverse voltage at a specific value. For eg. 3V, 4V or 5V.
 6. Put the oven switch to ON position and allow the oven temperature to increase
up to 85°C

7. As soon as the temperature reaches 85°C switch off the oven .

8. Take the readings of the ammeter during the fall of temperature from 85°C in
step of 5°C up to room temperature.

9. Enter your readings in the observation tables

10. Find the slope and calculate band gap with the formula shown below .
𝐸𝑔 = 0.198 ∗ 𝑠𝑙𝑜𝑝e
OBSERVATIONS AND CALCULATIONS:

Sl. No. Temp t Temp 3

10 Reverse log I0
(°C) T=(t+273) K 𝑇 current ,
I0(μA)

75

70

65

60

55

50

45

40

35
GRAPH

𝑑𝑦
From the graph slope of the line, m= 𝑑𝑥
=

Band gap energy,

𝐸𝑔 ​ = 0.198 ∗ 𝑚
=…………………… eV
Result:
The band gap energy Eg of the given semiconductor =
Experiment No.
Characteristics of LED

Aim
To study the characteristics of a light emitting diode.
Apparatus
LED, resistor, an ammeter (0-50 mA), a voltmeter (0-10V), a 0-15V dc regulated
power supply.
Circuit Diagram

Theory
LED is a semiconductor pn junction device that gives off light when it is forward
biased. When it is forward biased minority carriers are injected across the junction and
recombine with the majority carriers. This results in emission of light of wavelength

ℎ𝑐
λ=𝐸
𝑔

Procedure
The circuit is connected as shown in the diagram. The power supply knob is kept
in the minimum position and is switched on. The voltage is varied in suitable steps and
the corresponding current is noted and recorded. The voltage is increased to 1V, 1.5V, 2V,
2.5V etc. and each time note the corresponding current. Now plot a graph between
voltage and current. The characteristic curve is as shown in figure

Observations and Calculations:

LED Forward bias Forward current(IF)

voltage (VF) (milliampere)
(Volt)

BLUE
 GREEN

YELLOW

Results
1. The LED characteristics are drawn.
2. The voltage at which conduction begins for
​ ​ ​ ​ ​ Blue =
​ ​ ​ ​ ​ Green =
​ ​ ​ ​ ​ Yellow=
​ ​ ​ ​
Experiment No.
Solar cell : V-I characteristics at different intensities
Aim

To study the current –voltage characteristics of a solar cell.

Apparatus

Solar panel, voltmeter, milli ammeter, resistance box, a 100W lamp with an
intensity control, area choppers etc.

Circuit diagram

Theory

A solar cell is a p-n junction which can convert light energy to electrical energy.
When a solar cell is illuminated, the photons incident on the cell generate electron- hole
pairs. By diffusion in the material these electrons and holes reach the junction. Under the
influence of an electric field, electrons from p-region are swept into the n-region and
holes from n-region to p- region which leads to increase in the number of holes on p-side
and electrons on n-side of the junction. The accumulation of charge on the two sides of
the junction produces an emf known as photo emf or open circuit voltage. When an
external circuit is connected across the solar cell terminals , the minority carriers return to
their original sides through the external circuit. To increase the output power ,solar cells
are arranged in series or parallel which is known as a solar panel.
Fill Factor (FF) is a crucial parameter in the field of solar energy that measures the
efficiency of a solar cell or panel. It represents the ratio of the maximum power output of
the solar cell to the product of its open-circuit voltage and short-circuit current.
Fill Factor (FF) = (Maximum Power Output) / (Open-Circuit Voltage x
Short-Circuit Current)
= (Vmax * I max)/(Voc* Isc)
Procedure

Connections are made as shown in figure. The intensity of the lamp is kept
minimum. With no load resistance, measure the output voltage . Now short the output
terminals and note the short circuit current. Connect a load resistance, for example, 100
ohms at the output terminals, and note the output voltage and current. The load is
increased in steps and each time note the output voltage and current. Repeat the
experiment for different intensities. Now plot a graph between current and voltage.

Observations and Calculations :

To plot I – V characteristics :

Sl. No. RL (Ω) Intensity (I1) Intensity (I2) Intensity (I3)

Voltage Current Voltage Current Voltage Current

(V) (mA) (V) (mA) (V) (mA)

Intensity I1
Open circuit voltage, Voc =
Short circuit current, I sc=
Fill factor ​ = (Vmax * I max)/(Voc* Isc)
​ ​ =
​ ​ =
Intensity I2
Open circuit voltage, Voc =
Short circuit current, I sc=
Fill factor ​ = (Vmax * I max)/(Voc* Isc)
​ ​ =
​ ​ =

Intensity I3
Open circuit voltage, Voc =
Short circuit current, I sc=
Fill factor​ = (Vmax * I max)/(Voc* Isc)
​ ​ =
​ ​ =

Results

1. I-V characteristics of a solar cell are drawn.

2. Fill factor for

Intensity I1=

Intensity I2=

Intensity I3=
Experiment No.
Laser- Determination of wavelength using diffraction grating

Aim

To determine wavelength of Helium Neon laser (or any standard laser) using
diffraction grating.

Apparatus

Helium Neon laser, Diffraction grating ,screen etc.

Theory

Diffraction gratings are used to separate light into its individual wavelengths or
colors. Typically, they offer better wavelength resolution compared to prisms, though
they often result in lower light intensity. To determine the wavelength, one can direct a
light beam at a grating with a known spacing, and then measure the angle at which the
light is dispersed. This method was initially used to measure the atomic spectra of
different elements. Alternatively, by directing light of a known wavelength onto a regular
slit pattern and measuring the slit spacing, this technique can be applied to measure the
distance between grooves on a CD or the spacing between feathers on a bird's wing.

Experimental set-up for measuring wavelengths with a diffraction grating

The grating equation is

Sin𝛉 =Nnλ

where 𝛉 is angle of diffraction , N is number of lines per meter and is wavelength of

light used. From this, the wavelength of the laser can be determined.
Procedure

Part I: Measuring the wavelength of the laser:

In this setup, a diffraction grating is positioned in front of a laser source. As light

passes through the grating, it undergoes diffraction and the resulting image is projected
onto a screen located approximately 10 cm from the grating (denoted as D). The distance
between two first-order diffraction images on the screen is measured as 2d. From these
measurements, the angle θ can be calculated using the formula:

tan 𝛉 = d/D

𝛉 = tan-1(d/D).

With the angle θ, the number of lines per meter N, and the order of diffraction n, the
wavelength of the laser light can be determined using the equation:

Sin𝛉 =Nnλ

The experiment can be repeated for different values of D, the distance between source
and screen.

Observation:

Part I: Measuring the wavelength of the laser:

Order of diffraction, n=1

Sl. D (cm) 2d (cm) d (cm) tan θ= d/D θ=

NO. tan-1(d/D).
 Mean θ =

No of lines per meter of grating N = ---------------- lines/m

Sin𝛉 =Nnλ

i.e ,𝜆​ = Sinθ /Nn

​ ​ =

​ ​ =

RESULTS

Wavelength of laser used =

Experiment No.
Compare the variation of current with a potential difference for a metal, filament
bulb and semiconductor diode

Aim

To investigate the relationship between current and potential difference for a

metal, filament bulb and semiconductor diode.

Apparatus:

A.​ Experimental apparatus/ kit

1.​ Power supply session: Three types of DC voltage sources ( 2V, 4V,12 V) are
connected inside the apparatus which can be selectable with the help of a selector
switch.
2.​ One number of variable knob also provided on the top of the panel as rheostat
which will help to vary the voltage from 0 to its maximum voltage
3.​ Two numbers of digital display mounted on the front panel as voltmeter (0-20) V
and dual range current meter (0-200) mA/(0-2)A selectable with a selector switch
also fitted near the meter.
4.​ Metal nichrome: in the form of wire connected inside the apparatus (L- 70 cm)
5.​ Filament bulb: Bulb holder fitted on the top of the panel and connected inside the
apparatus as per circuit diagram and connection brought out on the top of the panel
with the help of sockets.
6.​ P N diode. Diode IN 4007 in series with 100 ohm resistance is connected inside
the apparatus and connection brought on the sockets.

Procedure:

Connections are done as shown in the figure.

 Select metal wire, filament bulb or semiconductor diode as per the requirements.
Initially select a suitable input voltage ( 12 V for metal, 4V volt for filament bulb and 2V
for diode) . Vary the voltage with the help of rheostat knob slowly in step of 0.5V and
note down the corresponding current shown in the ammeter. (change the selection switch
to milliampere for diode). Vary the voltage up to maximum voltage and note the
corresponding current. Draw the graph between voltage and current as shown in Fig. 1, 2
and 3.

Observations:
A.​ For metal

Sl No Voltmeter Ammeter
reading (V) reading (A)
 Fig. 1

B.​ For filament bulb

Sl No, Voltmeter Ammeter

reading reading
(V) (A)

Fig. 2
 C.​ Diode

Sl No Voltmeter Ammeter
reading (V) reading
(mA)

Fig, 3

Result:

The V-I characteristics of metal, filament bulb and diode are drawn
Experiment No.

CRO- Measurement of frequency and Amplitude of wave forms

Aim

Measurement of frequency and amplitude (voltage) of a given signal using a

Cathode Ray Oscilloscope (CRO)

Apparatus

Cathode Ray Oscilloscope, Function Generator, a pair of British Naval Connectors

etc.

A cathode ray oscilloscope (CRO) is an electronic device which converts electrical

signals to visual signals. It consists of a specialized evacuated tube in which images are
formed when an electron beam strikes a phosphor coated surface. It is widely used in
acoustic research, television production engineering, to study the nature of wave motions
and in electronics. The German physicist Ferdinand Braun developed the first CRO in
1897. The vertical axis represents the voltage and the horizontal axis represents the time.
Using a CRO, voltage amplitude, frequency of the signal and phase angle can be
measured.

The functions of sockets and knobs on the front panel are as follows:

ON/OFF: CRO is turned on or off. An LED indicates the status whether it is on or off.

INTENSITY: Controls the brightness of the Display

FOCUS : Controls the sharpness of the Display.

Vertical Deflection

Y- POSITION Controls the vertical shifting of the trace.

AMP/DIV: Enlarges the signal in vertical direction.

ON/OFF: Turns the channel on or off.

AC/DC: In DC position signal is directly coupled. In AC position, DC Component is
blocked.

Time Base and Horizontal Deflection

X- POSITION LEVEL : To keep the signal to remain still.

s/ms : In combination with TIME/DIV switch selects the time co-efficients.

MAG x n : Helps in the magnification of the horizontal deflection by a factor n.

TIME/DIV : Enlarges the signal in X direction. In combination with s/ms it selects the
time co-efficients.

X via A : Horizontal deflection is determined by the input signal to channel A.

CAL : It should be turned to CAL position to take readings.

INT/EXT : External triggering signal for time base can be given through this socket.
NORM/TV: Normal triggering is obtained in NORM position & TV line or TV frame
synchronization in TV position.

Procedure

Switch on the CRO. Keep the time base knob in the horizontal input position and
wait for some time. You can see a bright spot of light on the screen of the CRO. Using the
horizontal position knob and vertical position knob this spot can be moved in vertical or
horizontal direction. .Keep the time base in appropriate position (i.e. 1ms/cm , 0.1 ms/cm
etc ). Now a bright line can be seen on the screen of the CRO. CRO is now ready to
measure voltage and frequency of the unknown signal.

(i) To measure the Amplitude of the signal.

Adjust the Y position knob so that the trace of the horizontal line coincides with
the central line by keeping the AC/DC switch in GND position.
Now connect the CRO with the Function generator using the CRO probe and switch on
the function generator.
 Count the number of divisions of the signal from peak to peak. .Multiply this with
the scale shown by AMP/DIV knob. This will give the peak to peak amplitude and half of
this will give the peak value of the voltage.

Repeat the experiment for different settings of AMP/DIV knob.

(ii) To measure the Frequency of the signal.

Now connect the CRO with the Function generator using the CRO probe and
switch on the function generator and feed the signal whose frequency is to be measured
to either of the channels.
Adjust the TIME/DIV knob so that two or cycles of the wave form can be clearly
seen. Count the number of divisions in one cycle. Multiply this with the time base setting.
This will give the time period of the signal. Reciprocal of the time period will give the
frequency of the signal.
Repeat the experiment for different settings of TIME/DIV knob.
OBSERVATIONS:
Measurement of peak to peak voltage and frequency

Sl. X axis Y axis No of No of Peak to Amplitu Time Frequen

No Time Voltage divisio divisio peak de of period, cy
. scale, x scale, y ns ns voltage wave T = 1/T
(ms/div) (volt/div) on on = (V) (ms) = (Hz)
X axis, Y axis, y * n2 x * n1
n1 n2 (V)

Result

The amplitude and frequency of the wave form is measured.