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1N5811US

Diode

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0% found this document useful (0 votes)
5 views5 pages

1N5811US

Diode

Uploaded by

onafets
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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1N5807US, 1N5809US, 1N5811US and URS

VOID-LESS HERMETICALLY SEALED ULTRAFAST Qualified Levels:


JAN, JANTX,
Available on
commercial
RECOVERY GLASS RECTIFIERS JANTXV and JANS
versions Qualified per MIL-PRF-19500/477
DESCRIPTION
This “Ultrafast Recovery” rectifier diode series is military qualified and is ideal for high-reliability
applications where a failure cannot be tolerated. The industry-recognized 6.0 amp rated rectifiers
with working peak reverse voltages from 50 to 150 volts are hermetically sealed with void-less glass
construction using an internal “Category 1” metallurgical bond. These devices are available in both
surface mount MELF and leaded package configurations. Microsemi also offers numerous other
rectifier products to meet higher and lower current ratings with various recovery time requirements
including standard, fast and ultrafast device types in both through-hole and surface mount
packages. “B” MELF
Important: For the latest information, visit our website http://www.microsemi.com. Package (US)
FEATURES
• JEDEC registered surface mount equivalent of 1N5807, 1N5809, 1N5811 series.
• Void-less hermetically sealed glass package.
• Quadruple-layer passivation.
• Extremely robust construction.
• Internal “Category 1” metallurgical bonds.
• JAN, JANTX, JANTXV and JANS qualifications are available per MIL-PRF-19500/477. “B” MELF
• RoHS compliant versions available (commercial grade only). Package (URS)
APPLICATIONS / BENEFITS
• Ultrafast recovery 6 amp rectifier series from 50 to 150 V.
• Military, space and other high-reliability applications.
Also available in:
• Switching power supplies or other applications requiring extremely fast switching & low forward
loss. “B” Package
• High forward surge current capability. (axial-leaded)
• Low thermal resistance. 1N5807, 09 and 11
• Controlled avalanche with peak reverse power capability.
• Inherently radiation hard as described in Microsemi MicroNote 050.
MAXIMUM RATINGS @ TA = 25 oC unless otherwise specified

Parameters/Test Conditions Symbol Value Unit


o
Junction and Storage Temperature TJ and TSTG -65 to +175 C
o
Thermal Resistance Junction-to-End Cap Figure 1 R ӨJEC 6.5 C/W
o
Thermal Resistance R ӨJX 52 C/W
Working Peak Reverse Voltage: 1N5807 V RWM 50 V
1N5809 100
1N5811 150 MSC – Lawrence
(3)
Forward Surge Current I FSM 125 A 6 Lake Street,
Average Rectified Output Current I O1 6.0 A Lawrence, MA 01841
o (1) Tel: 1-800-446-1158 or
@ TL = +75 C at 3/8 inch lead length
(978) 620-2600
Average Rectified Output-Current I O2 3.0 A
o (2) Fax: (978) 689-0803
@ TA = +55 C at 3/8 inch lead length
Capacitance @ V R = 10 V, f = 1 MHz; Vsig = 50 mV (p-p) CJ 60 pF MSC – Ireland
(4)
Reverse Recovery Time t rr 30 ns Gort Road Business Park,
o Ennis, Co. Clare, Ireland
Solder Temperature @ 10 s TSP 260 C
Notes: 1. I O1 is rated at T EC = 75 °C. Derate at 60 mA/ºC for T EC above 75 ºC. Tel: +353 (0) 65 6840044
o
2. I O2 is derated at 25 mA/ºC above T A = 55 C for PC boards where thermal resistance from mounting
Fax: +353 (0) 65 6822298
o
point to ambient is sufficiently controlled where T J(max) 175 C is not exceeded.
3. T A = 25 oC @ I O = 3.0 A and V RWM for ten 8.3 ms surges at 1 minute intervals. Website:
4. I F = 1.0 A, I RM = 1.0 A, I R(REC) = .0.10 A and di/dt = 100 A/µs min. www.microsemi.com

T4-LDS-0168-1, Rev. 1 (120776) ©2012 Microsemi Corporation Page 1 of 5


1N5807US, 1N5809US, 1N5811US and URS

MECHANICAL and PACKAGING


• CASE: Hermetically sealed void-less hard glass with tungsten slugs.
• TERMINALS: Tin/lead (Sn/Pb) or RoHS compliant matte/tin (commercial grade only) over nickel plate over copper.
• MARKING: Body coated in blue with part number.
• POLARITY: Cathode indicated by band.
• TAPE & REEL option: Standard per EIA-296. Consult factory for quantities.
• WEIGHT: 539 milligrams.
• See Package Dimensions on last page.

PART NOMENCLATURE

JAN 1N5807 US (e3)

Reliability Level RoHS Compliance


JAN = JAN Level e3 = RoHS compliant (available
JANTX = JANTX Level on commercial grade only)
JANTXV = JANTXV Level Blank = non-RoHS compliant
JANS = JANS Level
Blank = Commercial Surface mount Package Type
US = 2 Square end caps
JEDEC type number URS = 1 Square + 1 Round end
(See Electrical Characteristics cap
table)

SYMBOLS & DEFINITIONS


Symbol Definition
V BR Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature
V RWM
range.
Average Rectified Output Current: Output current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave input and
IO
a 180 degree conduction angle.
VF Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
IR Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and temperature.
C Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage.
Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from
t rr the forward direction to the reverse direction and a specified recovery decay point after a peak reverse current occurs.

ELECTRICAL CHARACTERISTICS @ TA = 25 ºC unless otherwise stated

BREAKDOWN MAXIMUM FORWARD REVERSE SURGE REVERSE


VOLTAGE VOLTAGE CURRENT CURRENT RECOVERY
(MIN.) @ 4 A (8.3 ms pulse) (MAX.) (MAX) TIME (MAX)
@ 100 µA V FM @ V RWM I FSM t rr
V (BR) IR (Note 1) (Note 2)
TYPE Volts µA
Volts 25 oC 125 oC 25 oC 125 oC Amps ns
1N5807 60 0.875 0.800 5 525 125 30
1N5809 110 0.875 0.800 5 525 125 30
1N5811 160 0.875 0.800 5 525 125 30

NOTES: 1. T A = 25 oC @ I O = 3.0 A and V RWM for ten 8.3 ms surges at 1 minute intervals.
2. I F = 1.0 A, I RM = 1.0 A, I R(REC) = 0.10 A and di/dt = 100 A/µs min.

T4-LDS-0168-1, Rev. 1 (120776) ©2012 Microsemi Corporation Page 2 of 5


1N5807US, 1N5809US, 1N5811US and URS

GRAPHS

Theta (oC/W)

Heating Time (sec)

FIGURE 1
Maximum Thermal Impedance
PO (W)

I O (A)

FIGURE 2
Rectifier Power vs I O (Average Forward Current)

T4-LDS-0168-1, Rev. 1 (120776) ©2012 Microsemi Corporation Page 3 of 5


1N5807US, 1N5809US, 1N5811US and URS

Thermal Resistance (oC/W) GRAPHS (continued)

Pad Area per Pad (sq in)

FIGURE 3
Thermal Resistance vs FR4 Pad Area At Ambient
PCB horizontal (for each pad) with 1, 2, and 3 oz copper
IF (V)

V F (V)

FIGURE 4
Forward Voltage vs Forward Current

T4-LDS-0168-1, Rev. 1 (120776) ©2012 Microsemi Corporation Page 4 of 5


1N5807US, 1N5809US, 1N5811US and URS

PACKAGE DIMENSIONS

NOTES: DIMENSIONS
1. Dimensions are in inches. Ltr INCH MILLIMETERS Notes
2. Millimeters are given for general information only. Min Max Min Max
3. Dimensions are pre-solder dip. BD .137 .148 3.48 3.76 8
4. Minimum clearance of glass body to mounting surface on all BL .200 .225 5.08 5.72
orientations. ECT .019 .028 0.48 0.71 8
5. Cathode marking to be either in color band, three dots spaced equally S .003 0.08
or a color dot on the face of the end tab.
6. Color dots will be .020 inch (0.51 mm) diameter minimum and those
on the face of the end tab shall not lie within .020 inch (0.51 mm) of
the mounting surface.
7. In accordance with ASME Y14.5M, diameters are equivalent to Φx
symbology.
8. On “URS” one end cap shall be square and the other end cap shall be
round.

PAD LAYOUT

DIM INCH MILLIMETERS


A 0.288 7.32
B 0.070 1.78
C 0.155 3.94

NOTE: If mounting requires adhesive separate from the solder, an additional 0.080 inch
diameter contact may be placed in the center between the pads as an optional spot
for cement.

T4-LDS-0168-1, Rev. 1 (120776) ©2012 Microsemi Corporation Page 5 of 5

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