JIEJIE MICROELECTRONICS CO. , Ltd.

JST16A-600B 16A TRIAC Rev.A.1.0

DESCRIPTION:
The JST16A-600B triac is suitable for general purpose
AC switching. It can be used as an ON/OFF function in
applications such as heating regulation, induction motor
starting circuits, for phase control operation in light
dimmers, motor speed controllers. By using an internal
ceramic pad, JST16A-600B provides a rated insulation
voltage of 2500 VRMS, complying with UL standards
(File ref: E252906). Package TO-220A is RoHS compliant.

MAIN FEATURES
Symbol Value Unit
IT(RMS) 16 A
VDRM /VRRM 600 V
IGTⅠ/Ⅱ/Ⅲ/Ⅳ 50/50/50/70 mA

ABSOLUTE MAXIMUM RATINGS

Parameter Symbol Value Unit
Storage junction temperature range Tstg -40-150 ℃
Operating junction temperature range Tj -40-125 ℃
Repetitive peak off-state voltage (Tj=25℃) VDRM 600 V
Repetitive peak reverse voltage (Tj=25℃) VRRM 600 V
RMS on-state current (TC≤80℃) IT(RMS) 16 A
Non repetitive surge peak on-state current
160
(full cycle , tp=20ms , Tj=25℃)
ITSM A
Non repetitive surge peak on-state current
176
(full cycle , tp=16.6ms , Tj=25℃)
I2t value for fusing (tp=10ms , Tj=25℃) I 2t 128 A2s

Critical rate of rise of on-state current Ⅰ-Ⅱ 100

dI/dt A/μs
(IG=2×IGT , f=100Hz , Tj=125℃) Ⅲ-Ⅳ 50
Peak gate current (tp=20μs , Tj=125℃) IGM 4 A
Average gate power dissipation (Tj=125℃) PG(AV) 0.5 W
Peak gate power PGM 10 W

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JST16A-600B JieJie Microelectronics CO. , Ltd.
Peak pulse voltage
Vpp 1 kV
(Tj=25℃; non-repetitive,off-state;FIG.7)

ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)

Symbol Test Condition Quadrant Value Unit

Ⅰ-Ⅱ-Ⅲ 50
IGT MAX. mA
VD=12V RL=33Ω Ⅳ 70

VGT ALL MAX. 1 V

VD=VDRM Tj=125℃
VGD ALL MIN. 0.2 V
RL=3.3KΩ
Ⅰ-Ⅲ-Ⅳ 70
IL IG=1.2IGT MAX. mA
Ⅱ 100

IH IT=200mA MAX. 60 mA

dV/dt VD=400V Gate Open Tj=125℃ MIN. 1200 V/μs

(dV/dt)c (dI/dt)c=7A/ms, Tj=125℃ MIN. 12 V/μs

ton IG=80mA IA=400mA IR=40mA 5

TYP. μs
toff Tj=25℃ 50

STATIC CHARACTERISTICS

Symbol Parameter Value(MAX.) Unit

VTM ITM=22.5A tp=380μs Tj=25℃ 1.5 V

VTO Threshold voltage Tj=125℃ 0.77 V

RD Dynamic resistance Tj=125℃ 30 mΩ

IDRM Tj=25℃ 5 μA
VD=VDRM VR=VRRM
IRRM Tj=125℃ 0.4 mA

THERMAL RESISTANCES

Symbol Parameter Value Unit

Rth(j-c) junction to case (AC) 2.0 ℃/W

Rth(j-a) junction to ambient (AC) 60 ℃/W

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JST16A-600B JieJie Microelectronics CO. , Ltd.

ORDERING INFORMATION

J ST 16 A -600 B
JieJie Microelectronics Co., Ltd.

Triacs

IT(RMS):16A B:IGT1-3≤50mA IGT4≤70mA

A:TO-220A(Ins) 600:VDRM /VRRM≥600V

MARKING

JST16A
600B XXX XXX
XXX XXX
Year Production
Month Code

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JST16A-600B JieJie Microelectronics CO. , Ltd.
FIG.1 Maximum power dissipation versus RMS FIG.2: RMS on-state current versus case
on-state current temperature
P(W) I T(RMS)(A)
30 20
18
25 16 80℃

14
20
12
15 10
8
10 6
4
5
2
0 0
0 5 10 (A) 15 20 0 25 50 75 100 125
I T(RMS) TC(℃)
FIG.3: Surge peak on-state current versus FIG.4: On-state characteristics
number of cycles
ITSM(A) I TM(A)
180
Tc=25℃,tp=20ms,one cycle,sine Tj=25℃ typ
160 100 Tj=25℃ max
140 Tj=125℃ typ
120
100
80 10
60
40
20
0 1
1.E+0 1.E+1 1.E+2 1.E+3 1.E+4 1.E+5 0 0.5 1 1.5 2 2.5 3 3.5
Number of cycles VTM(V)

FIG.5: Non-repetitive surge peak on-state FIG.6: Relative variations of gate trigger
current for a sinusoidal pulse with width current, holding current and latching
tp<20ms, and corresponding value of I2t current versus junction temperature
(Ⅰ-Ⅱ: dI/dt<100A/μs;Ⅲ-Ⅳ: dI/dt<50A/μs)
I TSM(A), I 2t(A2s) I GT,I H,IL(Tj)/IGT,IH,IL(Tj=25℃)
3
IGT(I/II/III)
dI/dt(I/II)
1000 2.5 IGT(IV)
I TSM
IH
dI/dt(III/IV) 2 IL
2
It
100
1.5

1
10

0.5

1 0
0.01 0.1 1 10 ‐40 ‐20 0 20 40 60 80 100 120 140
tp (ms) Tj(℃)

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JST16A-600B JieJie Microelectronics CO. , Ltd.
FIG.7：Test circuit for inductive and resistive loads to IEC-61000-4-5 standards

IE C 6 1 0 0 0 -4 -5 S ta n d a rd s
S u rg e G e n e ra to r
1 .2 /5 0 μ S v o lta g e s u rg e
8 /2 0 μ S c u rre n t s u rg e

R Gen
2Ω
F ilte rin g U n it Load M odel

R L

2Ω 6 .5 μ H

AC
IN P U T RG 300Ω

SHAPING AND SOLDERING PARAMETERS

Refer to《Instructions for installation of plastic-sealed in-line power devices》released by JieJie.

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JST16A-600B JieJie Microelectronics CO. , Ltd.

ORDERING INFORMATION
IGT(mA)
Voltage Base qty.
Order code Package Delivery mode
VDRM/VRRM (V) (pcs)
Ⅰ-Ⅱ-Ⅲ Ⅳ

JST16A-600B 600 50 70 TO-220A(Ins) 50 Tube

Document Revision History

Date Revision Changes
Apr.14, 2023 A.1.0 Last updated

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JST16A-600B JieJie Microelectronics CO. , Ltd.

PACKAGE MECHANICAL DATA

Dimensions
Ref. Millimeters Inches
m Min. Typ. Max. Min. Typ. Max.
. 9m
3
E 7- A A 4.40 4.60 0.173 0.181
3.
Φ B 0.61 0.88 0.024 0.035
C2
C 0.46 0.70 0.018 0.028
C2 1.21 1.32 0.048 0.052

F
L3

C3 2.40 2.72 0.094 0.107

V1
D 8.60 9.70 0.339 0.382
D

E 9.80 10.4 0.386 0.409

H

C3 F 6.25 6.85 0.246 0.270

L1

L2 G 2.40 2.70 0.094 0.106

H 28.0 29.8 1.102 1.173
L1 3.45 4.05 0.136 0.159
B
C L2 1.14 1.70 0.045 0.067
G
L3 2.65 2.95 0.104 0.116
V1 45° 45°

DELIVERY MODE

ＣＨＮ

TUBE INNER BOX

PACKAGE OUTLINE PER CARTON
(PCS) (PCS)

TO-220A TUBE 50 1,000 5,000

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JST16A-600B JieJie Microelectronics CO. , Ltd.

Information furnished in this document is believed to be accurate and reliable. However,

Jiangsu JieJie Microelectronics Co., Ltd assumes no responsibility for the consequences of
use without consideration for such information nor use beyond it. Information mentioned in
this document is subject to change without notice, apart from that when an agreement is
signed, Jiangsu JieJie complies with the agreement.
Products and information provided in this document have no infringement of patents.
Jiangsu JieJie assumes no responsibility for any infringement of other rights of third
parties which may result from the use of such products and information. This document
supersedes and replaces all information previously supplied.
is a registered trademark of Jiangsu JieJie Microelectronics Co., Ltd.
Copyright ©2023 Jiangsu JieJie Microelectronics Co., Ltd. Printed All rights reserved.

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