BC807H series

45 V, 500 mA PNP general-purpose transistors

Rev. 1 — 5 March 2019 Product data sheet

1. Product profile

1.1. General description

PNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD)
plastic package.

Table 1. Product overview

Type number Package NPN comlement
Nexperia JEDEC
BC807-16H SOT23 TO-236AB BC817K-16H
BC807-25H BC817K-25H
BC807-40H BC817K-40H

1.2. Features and benefits

• Three current gain selections
• High-temperature applications up to 175 °C
• AEC-Q101 qualified

1.3. Applications
• General-purpose switching and amplification

1.4. Quick reference data

Table 2. Quick reference data
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base - - -45 V
IC collector current - - -500 mA
ICM peak collector current single pulse; tp ≤ 1 ms - - -1 A
hFE DC current gain VCE = -1 V; IC = -100 mA
BC807-16H [1] 100 - 250
BC807-25H [1] 160 - 400
BC807-40H [1] 250 - 600

[1] pulsed; tp ≤ 300 μs; δ ≤ 0.02

Nexperia BC807H series
45 V, 500 mA PNP general-purpose transistors

2. Pinning information
Table 3. Pinning
Pin Symbol Description Simplified outline Graphic symbol
1 B base 3 C

2 E emitter
B
3 C collector
E
sym132
1 2

3. Ordering information
Table 4. Ordering information
Type number Package
Name Description Version
BC807-16H TO-236AB plastic, surface-mounted package; 3 leads SOT23
BC807-25H
BC807-40H

4. Marking
Table 5. Marking
Type number Marking code
BC807-16H [1] 6S%
BC807-25H [1] 6T%
BC807-40H [1] 6U%

[1] % = placeholder for manufacturing site code

BC807H_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved

Product data sheet Rev. 1 — 5 March 2019 2 / 21

Nexperia BC807H series
45 V, 500 mA PNP general-purpose transistors

5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Max Unit
VCBO collector-base voltage open emitter - -50 V
VCEO collector-emitter voltage open base - -45 V
VEBO emitter-base voltage open collector - -7 V
IC collector current - -500 mA
ICM peak collector current single pulse; tp ≤ 1 ms - -1 A
IBM peak base current single pulse; tp ≤ 1 ms - -200 mA
Ptot total power dissipation Tamb ≤ 25 °C [1] - 320 mW
[2] - 440 mW
[3] - 460 mW
[4] - 540 mW
Tj junction temperature - 175 °C
Tamb ambient temperature -55 175 °C
Tstg storage temperature -65 175 °C

[1] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated and standard footprint.
2
[2] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated; mounting pad for collector 1 cm .
[3] Device mounted on an FR4 Printed-Circuit-Board (PCB); 4-layer copper; tin plated and standard footprint.
2
[4] Device mounted on an FR4 Printed-Circuit-Board (PCB); 4-layer copper; tin-plated; mounting pad for collector 1 cm.

aaa-029554
600

(1)
Ptot
(mW)
(2)
(3)
400

(4)

200

0
-75 25 125 225
Tamb (°C)
2
1. FR4 PCB; 4-layer copper, 1cm
2. FR4 PCB; 4-layer copper, standard footprint
2
3. FR4 PCB; single-sided copper, 1cm
4. FR4 PCB; single-sided copper, standard footprint
Fig. 1. Power derating curves

BC807H_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved

Product data sheet Rev. 1 — 5 March 2019 3 / 21

Nexperia BC807H series
45 V, 500 mA PNP general-purpose transistors

aaa-029555
-10

IC
(A)

-1 tp = 100 µs

tp = 1 ms

-10-1 tp = 10 ms

tp = 100 ms
tp = 1 s
-10-2 DC; FR4 PCB, 4-layer copper;
collector mounting pad 1 cm2 DC

-10-3
-10-2 -10-1 -1 -10 -102 -103
VCE (V)

FR4 PCB; single-sided copper; standard footprint

Tamb = 25 °C
Fig. 2. Safe operating area; junction to ambient; continous and peak collector currents as a funtion of collecor-
emitter voltage

BC807H_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved

Product data sheet Rev. 1 — 5 March 2019 4 / 21

Nexperia BC807H series
45 V, 500 mA PNP general-purpose transistors

6. Thermal characteristics
Table 7. Thermal characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from junction to ambient in free air [1] - - 470 K/W
[2] 340 K/W
[3] 325 K/W
[4] - - 280 K/W
R(j-sp) thermal resistance from junction to solder point - - 110 K/W

[1] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated and standard footprint.
2
[2] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated; mounting pad for collector 1 cm .
[3] Device mounted on an FR4 Printed-Circuit-Board (PCB); 4-layer copper; tin-plated and standard footprint.
2
[4] Device mounted on an FR4 Printed-Circuit-Board (PCB); 4-layer copper; tin-plated; mounting pad for collector 1 cm .

aaa-029556
103
duty cycle = 1
Zth(j-a)
(K/W) 0.75
0.50
0.33
102 0.20
0.10
0.05

10 0.02
0.01

1 0

10-1
10-5 10-4 10-3 10-2 10-1 1 10 102 103
tp (s)

FR4 PCB; single-sided copper; tin-plated and standard footprint

Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-029557
103

Zth(j-a) duty cycle = 1

(K/W)
0.75
0.50
102 0.33
0.20

0.10
0.05
10
0.02
0.01

0
1
10-5 10-4 10-3 10-2 10-1 1 10 102 103
tp (s)
2
FR4 PCB; single-sided copper; tin-plated; mounting pad for collector 1 cm
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

BC807H_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved

Product data sheet Rev. 1 — 5 March 2019 5 / 21

Nexperia BC807H series
45 V, 500 mA PNP general-purpose transistors

aaa-029558
103

Zth(j-a) duty cycle = 1

(K/W)
0.75
0.50
102 0.33
0.20

0.10

0.05
10
0.02
0.01

0
1
10-5 10-4 10-3 10-2 10-1 1 10 102 103
tp (s)

FR4 PCB; 4-layer copper; tin-plated and standard footprint

Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-029559
103

Zth(j-a)
(K/W) duty cycle = 1
0.75
0.50
102
0.33
0.20

0.10
0.05
10
0.02
0.01

0
1
10-5 10-4 10-3 10-2 10-1 1 10 102 103
tp (s)
2
FR4 PCB; 4-layer copper; tin-plated; mounting pad for collector 1 cm
Fig. 6. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

BC807H_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved

Product data sheet Rev. 1 — 5 March 2019 6 / 21

Nexperia BC807H series
45 V, 500 mA PNP general-purpose transistors

7. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V(BR)CBO collector-base IC = -100 µA; IE = 0 A -50 - - V
breakdown voltage
V(BR)CEO collector-emitter IC = -10 mA; IB = 0 A -45 - - V
breakdown voltage
V(BR)EBO emitter-base IE = -100 µA; IC = 0 A -7 - - V
breakdown voltage
ICBO collector-base VCB = -25 V; IE = 0 A - - -100 nA
cut-off current VCB = -25 V; IE = 0 A; Tj = 150 °C - - -5 μA
IEBO emitter-base VEB = -5 V; IC = 0 A - - -100 nA
cut-off current
hFE DC current gain
BC807-16H VCE = -1 V; IC = -100 mA [1] 100 - 250
BC807-25H [1] 160 - 400
BC807-40H [1] 250 - 600
DC current gain VCE = -1 V; IC = -500 mA [1] 40 - -
VCEsat collector-emitter IC = -500 mA; IB = -50 mA [1] - - -700 mV
saturation voltage
VBEsat base-emitter saturation IC = -500 mA; IB = -50 mA [1] -1.2 V
voltage
VBE base-emitter voltage VCE = -1 V; IC = -500 mA [1] - - -1.2 V
fT transition frequency VCE = -5 V; IC = -10 mA; f = 100 MHz 80 - - MHz
Cc collector capacitance VCB = -10 V; IE = ie = 0 A; f = 1 MHz - 7 - pF
Ce emitter capacitance VEB = -0.5 V; IC = ic = 0 A; f = 1 MHz
BC807-16H 50 pf
BC807-25H 45 pF
BC807-40H 37 pF

[1] pulsed; tp ≤ 300 μs; δ ≤ 0.02

BC807H_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved

Product data sheet Rev. 1 — 5 March 2019 7 / 21

Nexperia BC807H series
45 V, 500 mA PNP general-purpose transistors

aaa-029560 aaa-027433
400 200

hFE hFE
(1)

300 150
(2)
(3)
(4)
(5)
(1)
200 100

(6)
(2)

100 (7) 50
(8)
(3)

0 0
-10-1 -1 -10 -102 -103 -10-1 -1 -10 -102 -103
IC (mA) IC (mA)

VCE = -1 V Tamb = 25 °C
(1) Tamb = 175 °C (1) VCE = -5 V
(2) Tamb = 150 °C (2) VCE = -2 V
(3) Tamb = 125 °C (3) VCE = -1 V
(4) Tamb = 100 °C Fig. 8. BC807-16H: DC current gain as a function of
(5) Tamb = 85 °C collector current; typical values
(6) Tamb = 25 °C
(7) Tamb = -40 °C
(8) Tamb = -55 °C
Fig. 7. BC807-16H: DC current gain as a function of
collector current; typical values
aaa-029561 aaa-027435
-1.2 -1
VBE
VBE (V)
(V) -0.9
(1)
(2)
-0.8 (3)
(1) (2)
-0.8

(3)
(4)
-0.7
-0.4 (5) (6)

(8)
(7)
-0.6

0 -0.5
-10-1 -1 -10 -102 -103 -10-1 -1 -10 -102 -103
IC (mA) IC (mA)

VCE = -1 V Tamb = 25 °C
(1) Tamb = -55 °C (1) VCE = -1 V
(2) Tamb = -40 °C (2) VCE = -2 V
(3) Tamb = 25 °C (3) VCE = -5 V
(4) Tamb = 85 °C Fig. 10. BC807-16H: Base-emitter voltage as a function
(5) Tamb = 100 °C of collector current; typical values
(6) Tamb = 125 °C
(7) Tamb = 150 °C
(8) Tamb = 175 °C
Fig. 9. BC807-16H: Base-emitter voltage as a function
of collector current; typical values

BC807H_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved

Product data sheet Rev. 1 — 5 March 2019 8 / 21

Nexperia BC807H series
45 V, 500 mA PNP general-purpose transistors

aaa-029562 aaa-027437
-1.2 -1
VBEsat
VBEsat (V)
(V) -0.9
(1)
(2)
-0.8 (1) (2) (3)
-0.8 (4)

(3)
(4)
(6) -0.7
(5)
-0.4
(8)
(7)
-0.6

0 -0.5
-10-1 -1 -10 -102 -103 -10-1 -1 -10 -102 -103
IC (mA) IC (mA)

IC / IB = 10 Tamb = 25 °C
(1) Tamb = -55 °C (1) IC / IB = 10
(2) Tamb = -40 °C (2) IC / IB = 20
(3) Tamb = 25 °C (3) IC / IB = 50
(4) Tamb = 85 °C (4) IC / IB = 100
(5) Tamb = 100 °C Fig. 12. BC807-16H: Base-emitter saturation voltage as
(6) Tamb = 125 °C a function of collector current; typical values
(7) Tamb = 150 °C
(8) Tamb = 175 °C
Fig. 11. BC807-16H: Base-emitter saturation voltage as
a function of collector current; typical values
aaa-029563 aaa-027439
-1 -1

VCEsat VCEsat
(V) (V)

-10-1 -10-1
(1)
(1)
(2) (2)
(3)
(4)
(3)

(4)

-10-2 -10-2
-10-1 -1 -10 -102 -103 -10-1 -1 -10 -102 -103
IC (mA) IC (mA)

IC / IB = 10 Tamb = 25 °C
(1) Tamb = 175 °C (1) IC / IB = 100
(2) Tamb = 85 °C (2) IC / IB = 50
(3) Tamb = 25 °C (3) IC / IB = 20
(4) Tamb = -40 °C (4) IC / IB = 10
Fig. 13. BC807-16H: Collector-emitter saturation voltage Fig. 14. BC807-16H: Collector-emitter saturation voltage
as a function of collector current; typical values as a function of collector current; typical values

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Product data sheet Rev. 1 — 5 March 2019 9 / 21

Nexperia BC807H series
45 V, 500 mA PNP general-purpose transistors

aaa-027440 aaa-027441
-1.0 25
IB (mA) = -15.0 -13.5
IC Cc
(A) -12.0 (pF)
-0.8 -10.5 20
-9.0
-7.5
-0.6 15
-6.0

-4.5
-0.4 10
-3.0

-0.2 -1.5 5

0 0
0 -1 -2 -3 -4 -5 0 -10 -20 -30 -40 -50
VCE (V) VCB (V)

Tamb = 25 °C f = 1 MHz
Fig. 15. BC807-16H: Collector current as a function of Tamb = 25 °C
collector-emitter voltage; typical values Fig. 16. BC807-16H: Collector capacitance as a function
of collector-base voltage; typical values
aaa-027442 aaa-027443
70 103
Ce
(pF)
60
fT
50 (MHz)

40 (1)
102
30
(2)

20

10

0 10
0 -1 -2 -3 -4 -5 -1 -10 -102 -103
VEB (V) IC (mA)

f = 1 MHz f = 1 MHz
Tamb = 25 °C Tamb = 25 °C
Fig. 17. BC807-16H: Emitter capacitance as a function (1) VCE = -5 V
of emitter-base voltage; typical values (2) VCE = -1 V
Fig. 18. BC807-16H: Transition frequency as a function
of collector current; typical values

BC807H_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved

Product data sheet Rev. 1 — 5 March 2019 10 / 21

Nexperia BC807H series
45 V, 500 mA PNP general-purpose transistors

aaa-029564 aaa-027445
600 400

hFE
hFE (1)
(2)
300
(3)
400 (4)
(5)
(1)
(2)
200
(6) (3)

200
(7)
100
(8)

0 0
-10-1 -1 -10 -102 -103 -10-1 -1 -10 -102 -103
IC (mA) IC (mA)

VCE = -1 V Tamb = 25 °C
(1) Tamb = 175 °C (1) VCE = -5 V
(2) Tamb = 150 °C (2) VCE = -2 V
(3) Tamb = 125 °C (3) VCE = -1 V
(4) Tamb = 100 °C Fig. 20. BC807-25H: DC current gain as a function of
(5) Tamb = 85 °C collector current; typical values
(6) Tamb = 25 °C
(7) Tamb = -40 °C
(8) Tamb = -55 °C
Fig. 19. BC807-25H: DC current gain as a function of
collector current; typical values
aaa-029565 aaa-027447
-1.2 -1.0
VBE
VBE (V)
(1)
(V) -0.9
(2)

-0.8 (3)
(1) (2)
-0.8

(3)
(4) -0.7
-0.4 (6)
(5)
(8)
(7) -0.6

-0 -0.5
-10-1 -1 -10 -102 -103 -10-1 -1 -10 -102 -103
IC (mA) IC (mA)

VCE = -1 V Tamb = 25 °C
(1) Tamb = -55 °C (1) VCE = -1 V
(2) Tamb = -40 °C (2) VCE = -2 V
(3) Tamb = 25 °C (3) VCE = -5 V
(4) Tamb = 85 °C Fig. 22. BC807-25H: Base-emitter voltage as a function
(5) Tamb = 100 °C of collector current; typical values
(6) Tamb = 125 °C
(7) Tamb = 150 °C
(8) Tamb = 175 °C
Fig. 21. BC807-25H: Base-emitter voltage as a function
of collector current; typical values

BC807H_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved

Product data sheet Rev. 1 — 5 March 2019 11 / 21

Nexperia BC807H series
45 V, 500 mA PNP general-purpose transistors

aaa-029566 aaa-027449
-1.2 -1.0
VBEsat
VBEsat (V)
(V) -0.9
(1)
-0.8 (1) (2)
(2)
-0.8 (3)
(4)
(3)
(4)
(6) -0.7
-0.4 (5)
(8)
(7)
-0.6

0 -0.5
-10-1 -1 -10 -102 -103 -10-1 -1 -10 -102 -103
IC (mA) IC (mA)

IC / IB = 10 Tamb = 25 °C
(1) Tamb = -55 °C (1) IC / IB = 10
(2) Tamb = -40 °C (2) IC / IB = 20
(3) Tamb = 25 °C (3) IC / IB = 50
(4) Tamb = 85 °C (4) IC / IB = 100
(5) Tamb = 100 °C Fig. 24. BC807-25H: Base-emitter saturation voltage as
(6) Tamb = 125 °C a function of collector current; typical values
(7) Tamb = 150 °C
(8) Tamb = 175 °C
Fig. 23. BC807-25H: Base-emitter saturation voltage as
a function of collector current; typical values
aaa-029567 aaa-027451
-1 -1

VCEsat
(V)
VCEsat
(V)
-10-1
(1)
(2)
(3) -10-1
(4) (1)

-10-2 (2)

(3)

(4)
-10-3 -10-2
-10-1 -1 -10 -102 -103 -10-1 -1 -10 -102 -103
IC (mA) IC (mA)

IC / IB = 10 Tamb = 25 °C
(1) Tamb = 175 °C (1) IC / IB = 100
(2) Tamb = 85 °C (2) IC / IB = 50
(3) Tamb = 25 °C (3) IC / IB = 20
(4) Tamb = -40 °C (4) IC / IB = 10
Fig. 25. BC807-25H: Collector-emitter saturation voltage Fig. 26. BC807-25H: Collector-emitter saturation voltage
as a function of collector current; typical values as a function of collector current; typical values

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Product data sheet Rev. 1 — 5 March 2019 12 / 21

Nexperia BC807H series
45 V, 500 mA PNP general-purpose transistors

aaa-027452 aaa-027453
-1.0 25
IB (mA) = -11.0 -9.9
IC Cc
(A) -8.8 (pF)
-7.7
-0.8 20
-6.6
-5.5

-0.6 -4.4 15

-3.3

-0.4 10
-2.2

-1.1
-0.2 5

0 0
0 -1 -2 -3 -4 -5 0 -10 -20 -30 -40 -50
VCE (V) VCB (V)

Tamb = 25 °C f = 1 MHz
Fig. 27. BC807-25H: Collector current as a function of Tamb = 25 °C
collector-emitter voltage; typical values Fig. 28. BC807-25H: Collector capacitance as a function
of collector-base voltage; typical values
aaa-027454 aaa-027455
60 103

Ce
(pF)
fT
(MHz)
40
(1)

102 (2)

20

0 10
0 -1 -2 -3 -4 -5 -1 -10 -102 -103
VEB (V) IC (mA)

f = 1 MHz f = 1 MHz
Tamb = 25 °C Tamb = 25 °C
Fig. 29. BC807-25H: Emitter capacitance as a function (1) VCE = -5 V
of emitter-base voltage; typical values (2) VCE = -1 V
Fig. 30. BC807-25H: Transition frequency as a function
of collector current; typical values

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Product data sheet Rev. 1 — 5 March 2019 13 / 21

Nexperia BC807H series
45 V, 500 mA PNP general-purpose transistors

aaa-029568 aaa-027457
1200 800

hFE hFE
(1)

900 (2) 600

(1)
(3)
(4) (2)
(5) (3)

600 400
(6)

300 (7) 200

(8)

0 0
-10-1 -1 -10 -102 -103 -10-1 -1 -10 -102 -103
IC(mA) IC (mA)

VCE = -1 V Tamb = 25 °C
(1) Tamb = 175 °C (1) VCE = -5 V
(2) Tamb = 150 °C (2) VCE = -2 V
(3) Tamb = 125 °C (3) VCE = -1 V
(4) Tamb = 100 °C Fig. 32. BC807-40H: DC current gain as a function of
(5) Tamb = 85 °C collector current; typical values
(6) Tamb = 25 °C
(7) Tamb = -40 °C
(8) Tamb = -55 °C
Fig. 31. BC807-40H: DC current gain as a function of
collector current; typical values
aaa-029572 aaa-027459
-1.2 -1
VBE
VBE (V) (1)
(V) -0.9
(2)

-0.8 (3)
(1) (2) -0.8

(3)
(4) -0.7
-0.4
(5) (6)

(7)
(8) -0.6

0 -0.5
-10-1 -1 -10 -102 -103 -10-1 -1 -10 -102 -103
IC (mA) IC (mA)

VCE = -1 V Tamb = 25 °C
(1) Tamb = -55 °C (1) VCE = -1 V
(2) Tamb = -40 °C (2) VCE = -2 V
(3) Tamb = 25 °C (3) VCE = -5 V
(4) Tamb = 85 °C Fig. 34. BC807-40H: Base-emitter voltage as a function
(5) Tamb = 100 °C of collector current; typical values
(6) Tamb = 125 °C
(7) Tamb = 150 °C
(8) Tamb = 175 °C
Fig. 33. BC807-40H: Base-emitter voltage as a function
of collector current; typical values

BC807H_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved

Product data sheet Rev. 1 — 5 March 2019 14 / 21

Nexperia BC807H series
45 V, 500 mA PNP general-purpose transistors

aaa-029569 aaa-027461
-1.2 -1.0
VBEsat
VBEsat (V)
(V) -0.9
(1)
-0.8 (2)
(1) (2)
-0.8 (3)
(4)

(3)
(4)
-0.7
-0.4 (5) (6)

(8)
(7)
-0.6

-0 -0.5
-10-1 -1 -10 -102 -103 -10-1 -1 -10 -102 -103
IC (mA) IC (mA)

IC / IB = 10 Tamb = 25 °C
(1) Tamb = -55 °C (1) IC / IB = 10
(2) Tamb = -40 °C (2) IC / IB = 20
(3) Tamb = 25 °C (3) IC / IB = 50
(4) Tamb = 85 °C (4) IC / IB = 100
(5) Tamb = 100 °C Fig. 36. BC807-40H: Base-emitter saturation voltage as
(6) Tamb = 125 °C a function of collector current; typical values
(7) Tamb = 150 °C
(8) Tamb = 175 °C
Fig. 35. BC807-40H: Base-emitter saturation voltage as
a function of collector current; typical values
aaa-029570 aaa-027463
-1 -1

VCEsat VCEsat
(V) (V)

-10-1 -10-1
(1)
(1)
(2)
(3) (2)
(4) (3)

-10-2 -10-2 (4)

-10-3 -10-3
-10-1 -1 -10 -102 -103 -10-1 -1 -10 -102 -103
IC (mA) IC (mA)

IC / IB = 10 Tamb = 25 °C
(1) Tamb = 175 °C (1) IC / IB = 100
(2) Tamb = 85 °C (2) IC / IB = 50
(3) Tamb = 25 °C (3) IC / IB = 20
(4) Tamb = -40 °C (4) IC / IB = 10
Fig. 37. BC807-40H: Collector-emitter saturation voltage Fig. 38. BC807-40H: Collector-emitter saturation voltage
as a function of collector current; typical values as a function of collector current; typical values

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Nexperia BC807H series
45 V, 500 mA PNP general-purpose transistors

aaa-027464 aaa-027465
-1.0 20
IB (mA) = -11.0 -9.9
IC Cc
(A) -8.8 -7.7 (pF)
-0.8 -6.6 16
-5.5
-4.4
-0.6 -3.3 12

-2.2

-0.4 8
-1.1

-0.2 4

0 0
0 -1 -2 -3 -4 -5 0 -10 -20 -30 -40 -50
VCE (V) VCB (V)

Tamb = 25 °C f = 1 MHz
Fig. 39. BC807-40H: Collector current as a function of Tamb = 25 °C
collector-emitter voltage; typical values Fig. 40. BC807-40H: Collector capacitance as a function
of collector-base voltage; typical values
aaa-027466 aaa-027467
50 103
Ce
(pF)
40 fT
(MHz)

30
(1)
102

20
(2)

10

0 10
0 -1 -2 -3 -4 -5 -1 -10 -102 -103
VEB (V) IC (mA)

f = 1 MHz f = 1 MHz
Tamb = 25 °C Tamb = 25 °C
Fig. 41. BC807-40H: Emitter capacitance as a function (1) VCE = -5 V
of emitter-base voltage; typical values (2) VCE = -1 V
Fig. 42. BC807-40H: Transition frequency as a function
of collector current; typical values

8. Test information

8.1. Quality information

This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.

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Nexperia BC807H series
45 V, 500 mA PNP general-purpose transistors

9. Package outline
Table 9. Package outline
3.0 1.1
2.8 0.9

0.45
0.15
2.5 1.4
2.1 1.2

1 2
0.48 0.15
0.38 0.09
1.9

Dimensions in mm 18-03-12

Fig. 43. Package outline TO-236AB (SOT23)

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Product data sheet Rev. 1 — 5 March 2019 17 / 21

Nexperia BC807H series
45 V, 500 mA PNP general-purpose transistors

10. Soldering
Table 10. Soldering
3.3

2.9

1.9

solder lands

solder resist
3 1.7 2

solder paste

0.7 0.6 occupied area

(3×) (3×)
Dimensions in mm

0.5
(3×)
0.6
(3×)

1 sot23_fr

Fig. 44. Reflow soldering footprint for TO-236AB (SOT23)

2.2
1.2
(2×)

1.4
(2×)

solder lands

4.6 2.6 solder resist

occupied area

Dimensions in mm
1.4

preferred transport direction during soldering

2.8

4.5 sot23_fw

Fig. 45. Wave soldering footprint for TO-236AB (SOT23)

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Product data sheet Rev. 1 — 5 March 2019 18 / 21

Nexperia BC807H series
45 V, 500 mA PNP general-purpose transistors

11. Revision history

Table 11. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BC807H_SER v.1 20190305 Product data sheet - -

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Nexperia BC807H series
45 V, 500 mA PNP general-purpose transistors
equipment, nor in applications where failure or malfunction of an Nexperia

12. Legal information product can reasonably be expected to result in personal injury, death or
severe property or environmental damage. Nexperia and its suppliers accept
no liability for inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
Data sheet status risk.
Quick reference data — The Quick reference data is an extract of the
Document status Product Definition product data given in the Limiting values and Characteristics sections of this
[1][2] status [3] document, and as such is not complete, exhaustive or legally binding.

Objective [short] Development This document contains data from Applications — Applications that are described herein for any of these
data sheet the objective specification for products are for illustrative purposes only. Nexperia makes no representation
product development. or warranty that such applications will be suitable for the specified use
without further testing or modification.
Preliminary [short] Qualification This document contains data from
Customers are responsible for the design and operation of their applications
data sheet the preliminary specification.
and products using Nexperia products, and Nexperia accepts no liability for
Product [short] Production This document contains the product any assistance with applications or customer product design. It is customer’s
data sheet specification. sole responsibility to determine whether the Nexperia product is suitable
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[1] Please consult the most recently issued document before initiating or Customers should provide appropriate design and operating safeguards to
completing a design. minimize the risks associated with their applications and products.
[2] The term 'short data sheet' is explained in section "Definitions".
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changed since this document was published and may differ in case of or problem which is based on any weakness or default in the customer’s
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Definitions use by customer’s third party customer(s). Nexperia does not accept any
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Draft — The document is a draft version only. The content is still under
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modifications or additions. Nexperia does not give any representations or the Absolute Maximum Ratings System of IEC 60134) will cause permanent
warranties as to the accuracy or completeness of information included herein damage to the device. Limiting values are stress ratings only and (proper)
and shall have no liability for the consequences of use of such information. operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
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Characteristics sections of this document is not warranted. Constant or
with the same product type number(s) and title. A short data sheet is
repeated exposure to limiting values will permanently and irreversibly affect
intended for quick reference only and should not be relied upon to contain
the quality and reliability of the device.
detailed and full information. For detailed and full information see the relevant
full data sheet, which is available on request via the local Nexperia sales Terms and conditions of commercial sale — Nexperia products are
office. In case of any inconsistency or conflict with the short data sheet, the sold subject to the general terms and conditions of commercial sale, as
full data sheet shall prevail. published at http://www.nexperia.com/profile/terms, unless otherwise agreed
in a valid written individual agreement. In case an individual agreement is
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concluded only the terms and conditions of the respective agreement shall
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apply. Nexperia hereby expressly objects to applying the customer’s general
Nexperia and its customer, unless Nexperia and customer have explicitly
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In no event shall Nexperia be liable for any indirect, incidental, punitive,
special or consequential damages (including - without limitation - lost Trademarks
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has been qualified for use in automotive applications. Unless otherwise
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be suitable for use in life support, life-critical or safety-critical systems or

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Nexperia BC807H series
45 V, 500 mA PNP general-purpose transistors

Contents
1. Product profile.............................................................. 1
1.1. General description......................................................1
1.2. Features and benefits..................................................1
1.3. Applications................................................................. 1
1.4. Quick reference data................................................... 1
2. Pinning information......................................................2
3. Ordering information....................................................2
4. Marking.......................................................................... 2
5. Limiting values............................................................. 3
6. Thermal characteristics............................................... 5
7. Characteristics.............................................................. 7
8. Test information..........................................................16
8.1. Quality information.....................................................16
9. Package outline.......................................................... 17
10. Soldering................................................................... 18
11. Revision history........................................................ 19
12. Legal information......................................................20

© Nexperia B.V. 2019. All rights reserved

For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 5 March 2019

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Product data sheet Rev. 1 — 5 March 2019 21 / 21