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Bc856bwh Series A2504

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0% found this document useful (0 votes)
3 views5 pages

Bc856bwh Series A2504

Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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BC856BWH, BC857BWH, BC857WH

Taiwan Semiconductor

200mW, PNP Small Signal Transistor


FEATURES KEY PARAMETERS
● AEC-Q101 qualified PARAMETER VALUE UNIT
● General-purpose transistors
VCBO -50/ -80 V
● Ideal for automated placement
● Moisture sensitivity level: level 1, per J-STD-020 VCEO -45/ -65 V
● RoHS Compliant VEBO -5 V
● Halogen-free
IC -100 mA
hFE 475-800
APPLICATIONS
● General switching and amplification Configuration Single die

MECHANICAL DATA
● Case: SOT-323
● Molding compound meets UL 94V-0 flammability rating
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 2 whisker test
● Weight: 5.00mg (approximately)

PACKAGE: SOT-323 PIN CONFIGURATION CIRCUIT DIAGRAM

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)


PARAMETER SYMBOL VALUE UNIT
Power dissipation(1) PD 200 mW
BC856BWH -80
Collector-base voltage BC857WH, VCBO V
-50
BC857BWH
BC856BWH -65
Collector-emitter voltage BC857WH, VCEO V
-45
BC857BWH
Emitter-base voltage VEBO -5 V
Collector current IC -100 mA
Junction temperature TJ -55 to +150 °C
Storage temperature TSTG -55 to +150 °C
Note:
1. Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint

1 Version: A2504
BC856BWH, BC857BWH, BC857WH
Taiwan Semiconductor

THERMAL PERFORMANCE
PARAMETER SYMBOL TYP UNIT
Junction-to-ambient thermal resistance(1) RӨJA 625 °C/W
Thermal Performance Note:
1. Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint

ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)


PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT
BC856BWH -80 - -
Collector-base
IC = -10µA, IE = 0A BC857WH, V(BR)CBO V
breakdown voltage -50 - -
BC857BWH
BC856BWH -65 - -
Collector-emitter
IC = -10mA, IB = 0A BC857WH, V(BR)CEO V
breakdown voltage -45 - -
BC857BWH
Emitter-base
IE = -1µA, IC = 0A V(BR)EBO -5 - - V
breakdown voltage
Collector-base
VCB = -30V, IE = 0A ICBO - - -15 nA
cut-off current
Emitter-base
VEB = -5V, IC = 0A IEBO - - -0.1 µA
cut-off current
BC856BWH,
220 - 475
DC current gain VCE = -5V, IC = -2mA BC857BWH hFE -
BC857WH 125 - 800
Collector-emitter
IC = -100mA, IB = -5mA VCE(sat) - - -0.65 V
saturation voltage
Base-emitter
IC = -100mA, IB = -5mA VBE(sat) - - -1.1 V
saturation voltage
Transition frequency VCE = -5V, IC = -10mA, f = 100MHz fT 100 - - MHz
Output capacitance VCB = -10V, IE = 0A, f = 1MHz Cobo - - 4.5 pF

ORDERING AND MARKING INFORMATION


ORDERING CODE PACKAGE PACKING DEVICE MARKING
BC856BWH RFG SOT-323 3,000 / 7" Tape & Reel 3B
BC857BWH RFG SOT-323 3,000 / 7" Tape & Reel 3F
BC857WH RFG SOT-323 3,000 / 7" Tape & Reel 3H

2 Version: A2504
BC856BWH, BC857BWH, BC857WH
Taiwan Semiconductor

CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)

Fig.1 Power Dissipation Curve Fig.2 Typical Capacitance Characteristics

250 16
14 f=1MHz
200
POWER DISSIPATION (mW)

12

CAPACITANCE (pF)
150 10
8
100 6 Cibo

4 Cobo
50
2
0 0
0 25 50 75 100 125 150 0.1 1 10 100

AMBIENT TEMPERATURE ( C) °
REVERSE VOLTAGE (V)

Fig.3 DC Current Gain vs. Collector Current Fig.4 Collector-Emitter Saturation Voltage vs.
Collector Current

1000 0.3
VCE= -5V IC/IB=20
TJ=150°C
VCE(SAT), COLLECTOR-EMITTER

0.25
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN

TJ=150°
0.2
TJ=25°C
TJ=25°
100 0.15
TJ=-55°C
0.1

0.05
TJ=-55°
10 0
1 10 100 1 10 100

IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Fig.5 Base-Emitter Saturation Voltage vs. Collector Fig.6 Base-Emitter Voltage vs. Collector Current
Current

1.2 1.2
IC/IB=20
VBE(ON), BASE-EMITTER VOLTAGE (V)

VCE= -5V
TJ=-55°C
SATURATION VOLTAGE (V)

TJ=-55°C
VBE(SAT), BASE-EMITTER

0.9 0.9

0.6 TJ=25°C 0.6 TJ=25°C

0.3 TJ=150°C 0.3 TJ=150°C

0 0
1 10 100 0.1 1 10 100

IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

3 Version: A2504
BC856BWH, BC857BWH, BC857WH
Taiwan Semiconductor

PACKAGE OUTLINE DIMENSIONS

SOT-323

P/NFYW

P/N = Device marking Y = Year code


F = Factory code W = Bi-Week code (A~Z)

4 Version: A2504
BC856BWH, BC857BWH, BC857WH
Taiwan Semiconductor

Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.

Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability
for application assistance or the design of Purchasers’ products.

Information contained herein is intended to provide a product description only. No license, express or implied, to any
intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for
such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale
and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability,
or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers
using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC
for any damages resulting from such improper use or sale.

5 Version: A2504

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