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Compuerta and 74HC08

M74HC08 is A high speed CMOS QUAD 2-INPUT AND GATE fabricated with silicon gate C2MOS technology. Internal circuit is composed of 2 stages including buffer output, which enables high noise immunity and stable output. All inputs are equipped with protection circuits against static discharge and transient excess voltage.

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Elio Granados
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0% found this document useful (0 votes)
233 views9 pages

Compuerta and 74HC08

M74HC08 is A high speed CMOS QUAD 2-INPUT AND GATE fabricated with silicon gate C2MOS technology. Internal circuit is composed of 2 stages including buffer output, which enables high noise immunity and stable output. All inputs are equipped with protection circuits against static discharge and transient excess voltage.

Uploaded by

Elio Granados
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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M74HC08

QUAD 2-INPUT AND GATE


s

HIGH SPEED: tPD = 7ns (TYP.) at VCC =6V LOW POWER DISSIPATION: ICC = 1A(MAX.) at TA=25C HIGH NOISE IMMUNITY: VNIH = V NIL = 28 % VCC (MIN.) SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 4mA (MIN) BALANCED PROPAGATION DELAYS: tPLH tPHL WIDE OPERATING VOLTAGE RANGE: VCC (OPR) = 2V to 6V PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 08

DIP

SOP

TSSOP

ORDER CODES
PACKAGE DIP SOP TSSOP TUBE M74HC08B1R M74HC08M1R T&R M74HC08RM13TR M74HC08TTR

DESCRIPTION The M74HC08 is an high speed CMOS QUAD 2-INPUT AND GATE fabricated with silicon gate C2MOS technology. The internal circuit is composed of 2 stages including buffer output, which enables high noise immunity and stable output.

All inputs are equipped with protection circuits against static discharge and transient excess voltage.

PIN CONNECTION AND IEC LOGIC SYMBOLS

July 2001

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M74HC08
INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
PIN No 1, 4, 9, 12 2, 5, 10, 13 3, 6, 8, 11 7 14 SYMBOL 1A to 4A 1B to 4B 1Y to 4Y GND VCC NAME AND FUNCTION Data Inputs Data Inputs Data Outputs Ground (0V) Positive Supply Voltage

TRUTH TABLE
A L L H H B L H L H Y L L L H

ABSOLUTE MAXIMUM RATINGS


Symbol V CC VI VO IIK IOK IO PD Tstg TL Supply Voltage DC Input Voltage DC Output Voltage DC Input Diode Current DC Output Diode Current DC Output Current Power Dissipation Storage Temperature Lead Temperature (10 sec) Parameter Value -0.5 to +7 -0.5 to VCC + 0.5 -0.5 to VCC + 0.5 20 20 25 50 500(*) -65 to +150 300 Unit V V V mA mA mA mA mW C C

ICC or IGND DC VCC or Ground Current

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied (*) 500mW at 65 C; derate to 300mW by 10mW/C from 65C to 85C

RECOMMENDED OPERATING CONDITIONS


Symbol V CC VI VO Top tr, tf Supply Voltage Input Voltage Output Voltage Operating Temperature Input Rise and Fall Time VCC = 2.0V VCC = 4.5V VCC = 6.0V Parameter Value 2 to 6 0 to VCC 0 to VCC -55 to 125 0 to 1000 0 to 500 0 to 400 Unit V V V C ns ns ns

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M74HC08
DC SPECIFICATIONS
Test Condition Symbol Parameter VCC (V) 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 4.5 6.0 VOL Low Level Output Voltage 2.0 4.5 6.0 4.5 6.0 II ICC Input Leakage Current Quiescent Supply Current 6.0 6.0 IO=-20 A IO=-20 A IO=-20 A IO=-4.0 mA IO=-5.2 mA IO=20 A IO=20 A IO=20 A IO=4.0 mA IO=5.2 mA VI = VCC or GND VI = VCC or GND 1.9 4.4 5.9 4.18 5.68 2.0 4.5 6.0 4.31 5.8 0.0 0.0 0.0 0.17 0.18 0.1 0.1 0.1 0.26 0.26 0.1 1 TA = 25C Min. 1.5 3.15 4.2 0.5 1.35 1.8 1.9 4.4 5.9 4.13 5.63 0.1 0.1 0.1 0.33 0.33 1 10 Typ. Max. Value -40 to 85C Min. 1.5 3.15 4.2 0.5 1.35 1.8 1.9 4.4 5.9 4.10 5.60 0.1 0.1 0.1 0.40 0.40 1 20 A A V V Max. -55 to 125C Min. 1.5 3.15 4.2 0.5 1.35 1.8 V Max. V Unit

VIH

High Level Input Voltage Low Level Input Voltage High Level Output Voltage

V IL

VOH

AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6ns)


Test Condition Symbol Parameter VCC (V) 2.0 4.5 6.0 2.0 4.5 6.0 TA = 25C Min. Typ. 30 8 7 24 8 7 Max. 75 15 13 75 15 13 Value -40 to 85C Min. Max. 95 19 16 95 19 16 -55 to 125C Min. Max. 110 22 19 110 22 19 ns Unit

tTLH tTHL Output Transition Time tPLH tPHL Propagation Delay Time

ns

CAPACITIVE CHARACTERISTICS
Test Condition Symbol Parameter VCC (V) 5.0 5.0 TA = 25C Min. Typ. 5 19 Max. 10 Value -40 to 85C Min. Max. 10 -55 to 125C Min. Max. 10 pF pF Unit

CIN C PD

Input Capacitance Power Dissipation Capacitance (note 1)

1) CPD is defined as the value of the ICs internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/4 (per gate)

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M74HC08
TEST CIRCUIT

C L = 50pF or equivalent (includes jig and probe capacitance) R T = ZOUT of pulse generator (typically 50)

WAVEFORM : PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle)

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M74HC08

Plastic DIP-14 MECHANICAL DATA


mm. DIM. MIN. a1 B b b1 D E e e3 F I L Z 1.27 3.3 2.54 0.050 8.5 2.54 15.24 7.1 5.1 0.130 0.100 0.51 1.39 0.5 0.25 20 0.335 0.100 0.600 0.280 0.201 1.65 TYP MAX. MIN. 0.020 0.055 0.020 0.010 0.787 0.065 TYP. MAX. inch

P001A
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M74HC08

SO-14 MECHANICAL DATA


DIM. A a1 a2 b b1 C c1 D E e e3 F G L M S 3.8 4.6 0.5 8.55 5.8 1.27 7.62 4.0 5.3 1.27 0.68 8 (max.) 0.149 0.181 0.019 8.75 6.2 0.35 0.19 0.5 45 (typ.) 0.336 0.228 0.050 0.300 0.157 0.208 0.050 0.026 0.344 0.244 0.1 mm. MIN. TYP MAX. 1.75 0.2 1.65 0.46 0.25 0.013 0.007 0.019 0.003 MIN. inch TYP. MAX. 0.068 0.007 0.064 0.018 0.010

PO13G
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M74HC08

TSSOP14 MECHANICAL DATA


mm. DIM. MIN. A A1 A2 b c D E E1 e K L 0 0.45 0.60 0.05 0.8 0.19 0.09 4.9 6.2 4.3 5 6.4 4.4 0.65 BSC 8 0.75 0 0.018 0.024 1 TYP MAX. 1.2 0.15 1.05 0.30 0.20 5.1 6.6 4.48 0.002 0.031 0.007 0.004 0.193 0.244 0.169 0.197 0.252 0.173 0.0256 BSC 8 0.030 0.004 0.039 MIN. TYP. MAX. 0.047 0.006 0.041 0.012 0.0089 0.201 0.260 0.176 inch

A2 A1 b e K c L E

E1

PIN 1 IDENTIFICATION

1
0080337D

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M74HC08

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringe ment of patents or other righ ts of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this pub lication are subject to change without notice. Thi s pub lication supersedes and replaces all information previously supplied. STMicroelectronics prod ucts are not authori zed for use as critical components in life suppo rt devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 2001 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Swit zerland - United Kingdom http://w ww.st.com

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This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.

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