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Bec 101 1

This document is an examination paper for the B.Tech (CSE/EE/ME/CE) program for the subject 'Emerging Domain in Electronics Engineering' for the Odd Semester Examinations 2023-24. It consists of three sections with various questions covering topics such as logic gates, transistors, operational amplifiers, and rectifiers. The total duration of the exam is 3 hours and the maximum marks are 50.

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nikkucomputersuar
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21 views2 pages

Bec 101 1

This document is an examination paper for the B.Tech (CSE/EE/ME/CE) program for the subject 'Emerging Domain in Electronics Engineering' for the Odd Semester Examinations 2023-24. It consists of three sections with various questions covering topics such as logic gates, transistors, operational amplifiers, and rectifiers. The total duration of the exam is 3 hours and the maximum marks are 50.

Uploaded by

nikkucomputersuar
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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ROLL NO:

(To fill the roll no is compulsory)

ODD SEMESTER EXAMINATIONS: 2023-24


B.Tech (CSE/EE/ME/CE)
Semester: I
SUBJECT CODE: BEC-101
Emerging Domain in Electronics Engineering

Time : 3 HOURS Maximum Marks: 50

NOTE: THE QUESTION PAPER CONTAINS THREE


SECTIONS. ATTEMPT ALL THE SECTIONS.
SECTION A
Note: Attempt all parts of the following questions. (10 Marks)
Q.1. Answer the following questions: (1×5 = 5 Marks)
i. Write the truth table of OR and AND gate.
ii. What is doping?
iii. Write one example of P type and N type material.
iv. What is the saturation region in transistors?
v. What is MOSFET?
Q.2. Answer the following questions: (1×5=5 Marks)
i. What is open loop gain in Op-Amp?
ii. Convert (125)10 into binary.
iii. Define Rectifier.
iv. What is slew rate?
v. What are universal gates?
(01) P.T.O
Find the (a) peak value of load current.
SECTION-B (b) the average value of current.
(c) the rms value of current.
Note: Attempt both questions. (5×2×2= 20 Marks) (d) the ripple factor

Q.3. (i) (a) What is breakdown mechanism in PN junction diode? (e) efficiency of the rectifier.

Explain various breakdown mechanism in detail.


OR
SECTION-C
(b) Differentiate between the conductor, semiconductor and
Note: Attempt both questions. (10×2 =20 Marks)
insulator.
(ii) (a) What is full wave rectifier? Calculate the RMS value of Q.5. (a) What is operational amplifier? Why is it used? Explain

output voltage. summer circuit using op-amp.

OR OR

(b) What are wave-shaping circuits? Explain biased clipper (b) What is CRT? Explain the working of CRT in detail.

in detail.
Q.4. (i) (a) What is BJT? What are the various configurations of Q.6. (a) What do you mean by PN junction diode? Explain its VI

BJT? Explain the CE configuration in detail. characteristics.

OR OR

(b) Minimize the logic expression given by: (b) Write down the expression of diode current equation. If the

𝑌 = 𝐴̅𝐵̅ 𝐶𝐷 + 𝐴̅𝐵𝐶𝐷
̅ + 𝐴̅𝐵̅ 𝐶̅ + 𝐴̅𝐵̅ 𝐷
̅ using k-map. forward current through a silicon diode is 20 mA at room

(ii) (a) What is NAND gate? Why is it called universal gate? temperature (270 C). The corresponding forward voltage is

Draw the various logic gates using NAND gate. 1.5 volts. Calculate the reverse saturation current I0.

OR
(b) In a centre tapped full wave rectifier, the load resistance
RL=1k ohm. The input AC voltage is equal to
220sin314t.
(03)
(02)

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